• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.113-117
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• 2003

This paper describes the design and the simulation results of the RF CMOS Class-E Power Amplifier for a 2.4GHz ISM band. This circuit is composed two connected amplifiers. where Class F amplifier drives Class E amplifier. The proposed circuit can reduce the total power dissipation of the driving stage and can work with higher efficiency. The power amplifier has been implemented in a standard $0.25{\mu}m$ CMOS technology and is shown to deliver 100mW output power to load with 41% power added efficiency(PAE) from a 2.5V supply.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.335-339
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• 2003

This Paper describes the design and the simulation results of the RF CMOS Class-E Power Amplifier for a 2.4GHz ISM band. This circuit is composed two connected amplifiers. where Class F amplifier drives Class E amplifier. The proposed circuit can reduce the total power dissipation of the driving stage and can work with higher efficiency. The power amplifier has been implemented in a standard 0.25$\mu\textrm{m}$ CMOS technology and is shown to deliver 100mW output Power to load with 41％ power added efficiency(PAE) from a 2.5V supply.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.2
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• pp.72-75
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• 2012

In this paper, high-efficiency DC-AC converter is implemented for the wireless power transmission. The DC-AC converter is implemented by combining the oscillator and power amplifier. Because the conversion efficiency of wireless power transmitter is strongly affected by the efficiency of power amplifier, the high-efficiency power amplifier is implemented by using the Class-E amplifier structure. Also, because the output power of oscillator connected to the input stage of power amplifier is low, high-gain two-stages power amplifier using the drive amplifier is implemented to realize the high-output power DC-AC converter. The dual band harmonic suppression filter is implemented to suppress 2nd, 3rd harmonics of 13.56 MHz. The output power and conversion efficiency of DC-AC converter are 40 dBm and 80.2 % at the operation frequency of 13.56 MHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.9
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• pp.54-58
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• 2011

In this paper a dual-band Class-E power amplifier using Composite Right-/Left-Handed transmission lines and PIN diode is proposed. Dual-band operation is achieved by the frequency offset and nonlinear phase slope of CRLH TL for the matching network of power amplifiers. The proposed power amplifier has been realized by using in the input and the output matching network for high power added efficiency. PIN diode has been used to obtain the dual-band of power amplifier. The measured results show that output powers of 42.17 dBm and 41.43 dBm were obtained at 800 MHz and 1900 MHz, respectively. At this frequency, we have obtained the power-added efficiency(PAE) of 67.84 % and 65.31 % in two operation frequencies, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.4
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• pp.274-280
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• 2007

This paper demonstrates an efficiency improvement of the class E power amplifier (PA) by tuning-out the input capacitance ($C_{IN}$) of the power HBT with a shunt inductance. In order to obtain high output power, the PA needs the large emitter size of a transistor. The larger the emitter size, the higher the parasitic capacitance. The parasitic $C_{IN}$ affects the distortion of the voltage signal at the base node and changes the duty cycle to decrease the PA's efficiency. Adopting the L-C resonance, we obtain a remarkable efficiency improvement of as much as 7%. This PA exhibits output power of 29 dBm and collector efficiency of 71% at 1.9 GHz.

• ETRI Journal
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• v.32 no.4
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• pp.548-554
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• 2010

The transcutaneous energy transmission system (TETS) composed of a Class-E amplifier may operate at a state away from the optimum power transmission due to the load variation. By introducing the feedback-loop technique, the TETS can keep the optimum state with constant output voltage by adjusting the important design parameters, that is, the duty ratio and frequency of the driving signal and the supply voltage. The relations between these adjusted parameters and the load are investigated. The effectiveness of the feedback technique is validated through a design example with a variable load parameter. The experimental results show that the Class-E amplifier in the feedback loop can keep operating at the optimum state under the condition of up to 50 percent variation of the load value.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.9 no.5
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• pp.72-79
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• 2010

In this paper, we describe the design and implementation of a high efficiency Doherty power amplifier using gallium nitride (GaN) high-electron mobility transistor (HEMT). The carrier and peaking amplifiers of the proposed Doherty power amplifier consist of the switching-mode Class-E power amplifiers. The test conditions are a duty of 10% and a pulse width of $100\;{\mu}s$ and pulse repetition frequency (PRF) of 1 kHz for a S-band radar application. A RF performance peak PAE of 64% with drain efficiency of 80.6%, at 6 dB output back-off point from saturated output power of 45.5 dBm, was obtained at 2.85 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.1
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• pp.1-11
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• 2009

In this paper, a new 1 kW power amplifier with high efficiency and high stability in a RF generator is designed and fabricated for plasma applications. The efficiency of power amplifier is improved by using class-E amplifier that consists of one push-pull MOSFET and high current drive IC instead of class-C amplifier composed of several single ended MOSFET. Switchable damper that allows selecting three different modes of amplifiers for considering efficiency and stability is added into the amplifier for plasma applications. Stable region of an early electronic discharge section is extended to VSWR of 4.5:1 compared to conventional VSWR of 3.8:1 through using switchable damper. The dimension of the amplifier is also reduced to 30 % of conventional amplifier. The 80 % efficiency of power amplifier with switchable damper is obtained the output power of 1 kW in operating frequency of 13.56 MHz. In comparison of conventional power amplifier for plasma applications, 13 % efficiency is improved.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.12
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• pp.1313-1321
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• 2008

outphasing class-E power amplifier using composite right/left-handed transmission lines(CRLH-TL) is proposed at 2.4 GHz. The power combiner including CRLH-TL is designed to suppress the second and third harmonics to increase linearity and the output problem of the conventional outphasing amplifier is also solved by the proposed outphasing amplifier. So the P AE is improved. The measured maximum output power at the fundamental frequency shows 31.8 dBm, whereas the PAE shows 50 % with 14 dBm input power excited. The IMD3 is improved by 5 dB compared to that of conventional outphasing amplifier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.4
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• pp.401-410
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• 2014

This paper presents a high-efficiency concurrent dual-band Class-E power amplifier(PA) that is based on a multi-harmonic matching network(MHMN). The proposed MHMN controls the impedance at 1.3 GHz, 2.1 GHz, and their second and third harmonics, respectively, by using transmission lines only rather than switches or lumped components. The dual-band Class-E PA is implemented using Avago ATF-50189 GaAs p-HEMT. The PA exhibits a measured output power of 27.1 dBm and 25.7 dBm, a power gain of 6.1 dB and 4.7 dB, and a drain efficiency of 71.2 % and 60.1 % at 1.3 GHz and 2.1 GHz, respectively.