• Journal of The Korean Association For Science Education
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• v.34 no.6
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• pp.583-592
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• 2014

The purpose of this study is to investigate the impact of argument-based modeling strategy using scientific writing on student's modeling ability. For this study, 66 students (three classes) from the 7th grade were selected and of these, 43 students (two classes) were assigned to two experimental groups while the other 23 students (one class) were assigned to comparative group. In the experimental groups, one group (22 students) was Argument-based multimodal Representation and Modeling (AbRM), and the other group (21 students) was Argument-based Modeling (AbM). Modeling ability consisted of identifying the problem, structuring of scientific concepts, adequacy of claim and evidence and index of multimodal representation. As for the modeling ability, AbRM group scored significantly higher than the other groups, AbM group was significantly higher than comparative group. The four sub-elements of modeling ability in the AbRM group was significantly higher than the other groups statistically and AbM group scored significantly higher than comparative group. From these results, the argument-based modeling strategy using scientific writing was effective on students' modeling ability. Students organized or expressed the model and evaluated or modified it through the process of argument-based modeling using scientific writing and the exchange of opinions with others by scientific language as argument and writing.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.81-86
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• 2005

In this paper, we present an efficiency extension of Doherty power amplifier using LDMOS FET devices with different peak output powers and an unequal power divider. The amplifier is designed by using a MRF21045 with P1 dB of 45 W as the main amplifier biased for Class-AB operation and a MRF21090 with P1 dB of 90 W as the peaking amplifier biased for Class-C operation. The input power is divided into a 1:1.5 power ratio between the main and peaking amplifier. The simulated results of the proposed Doherty amplifier shows an efficiency improvement of approximately 19 % in comparison to the class-AB amplifier at an output power of 42.5 dBm. The fabricated Doherty amplifier obtained a PAE of 33.68 % at 9 dB backed off from P1 dB of 51.5 dBm.

• Journal of the Institute of Convergence Signal Processing
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• v.4 no.1
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• pp.41-48
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• 2003

In this paper, a new equivalent circuit for a defected ground structure(DGS) is proposed and adapted to design of a power amplifier for performance improvement. The DGS equivalent circuit presented in this paper consists of parallel LC resonator and parallel capacitance to describe the fringing fields due to the etched defects on the metallic ground plane, and also is used to optimize the matching circuit of a power amplifier. A previous research has also used a DGS for harmonic rejection and efficiency improvement of a power amplifier(1), however, there was no exact equivalent circuit analysis. In this paper, we suggest a novel design method and show the performance improvement of a class AB power amplifier by using the equivalent circuit of a DGS applied to output matching circuit. The design method presented in this paper can provide very accurate design results to satisfy the optimum load condition and the desirable harmonic rejection, simultaneously. As a design example, we have designed a 20W power amplifier with and without circuit simulation of DGS, and compared the measurement results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.3
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• pp.276-282
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• 2015

Until recently, power amplifiers using LDMOS were Class-AB and Doherty type, and showed 55 % efficiency for narrowband of 60 MHz bandwidth. However, owing to the RRH application of base stations power amplifier module, a bandwidth expansion of at least 100 MHz and high efficiency power amplifiers of at least 60 % power efficiency are required. In this study, a Class-J power amplifier was designed by optimizing an output matching circuit so that the second harmonic load will contain a pure reactance element only and have broadband characteristics by using GaN HEMT. The measurements showed that a 45 W Class-J power amplifier with a power added efficiency of 60~75 % was achieved when continuous wave signals were input at 1.6~2.3 GHz, including W-CDMA application.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.1
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• pp.13-20
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• 2015

Existing LDMOS power amplifier that used class-AB and doherty system shows 55% of efficiency in 60MHz narrow band. Because RRH has been applied to power amplifier at base station. It is required that over 100MHz expanded band and more than 60% high efficiency power amplifier. In this paper we designed class-J power amplifier using LDMOS FET which has over 60% high efficiency characteristic in 200MHz. The output matching circuit of designed class-J power amplifier has been optimized to contain pure reactance at second harmonic load and has low quality factor Q. As a measurement result of the amplifier, when we input continuous wave signal, we checked 62~70% of power added efficiency(PAE) in 2.06~2.2GHz including WCDMA frequency as a 10W class-J power amplifier.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.726-729
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• 2013

In this paper, low power and high slew rate CMOS rail to rail input/output opamp applicable for ouput buffer amp, in LCD source driver IC, is proposed. Proposed op-amp, is realized the characteristics of low power consumption and high slew rate adding the newly designed control stage of class-B to the conventional output stage of class-AB. From the simulation results, we know that the proposed opamp buffer can drive a 1000pF capacitive load with a 6.5V/us slew-rate, while drawing only the the power consumption of 1.19mW from 3.3V power supply.

• Journal of the Korean Mathematical Society
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• v.53 no.2
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• pp.381-401
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• 2016

According to Jacobson [31], a right ideal is bounded if it contains a non-zero ideal, and Faith [15] called a ring strongly right bounded if every non-zero right ideal is bounded. From [30], a ring is strongly right AB if every non-zero right annihilator is bounded. In this paper, we introduce and investigate a particular class of McCoy rings which satisfy Property (A) and the conditions asked by Nielsen [42]. It is shown that for a u.p.-monoid M and ${\sigma}:M{\rightarrow}End(R)$ a compatible monoid homomorphism, if R is reversible, then the skew monoid ring R * M is strongly right AB. If R is a strongly right AB ring, M is a u.p.-monoid and ${\sigma}:M{\rightarrow}End(R)$ is a weakly rigid monoid homomorphism, then the skew monoid ring R * M has right Property (A).

• Kyungpook Mathematical Journal
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• v.51 no.3
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• pp.283-291
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• 2011

In this paper, a generalization of the class of semicommutative rings is investigated. A ring R is called central semicommutative if for any a, b ${\in}$ R, ab = 0 implies arb is a central element of R for each r ${\in}$ R. We prove that some results on semicommutative rings can be extended to central semicommutative rings for this general settings.

• Communications of the Korean Mathematical Society
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• v.39 no.1
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• pp.93-104
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• 2024

Let R be a commutative ring with identity. In this paper, we introduce a new class of ideals called the class of strongly quasi J-ideals lying properly between the class of J-ideals and the class of quasi J-ideals. A proper ideal I of R is called a strongly quasi J-ideal if, whenever a, b ∈ R and ab ∈ I, then a² ∈ I or b ∈ Jac(R). Firstly, we investigate some basic properties of strongly quasi J-ideals. Hence, we give the necessary and sufficient conditions for a ring R to contain a strongly quasi J-ideals. Many other results are given to disclose the relations between this new concept and others that already exist. Namely, the primary ideals, the prime ideals and the maximal ideals. Finally, we give an idea about some strongly quasi J-ideals of the quotient rings, the localization of rings, the polynomial rings and the trivial rings extensions.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.2 s.105
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• pp.129-133
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• 2006

In spite of the advantage of simple circuit, small size, and low price, predistortered power amplifier does not satisfy the IMD specification at low power range because of an IMD hump characteristic. To reduce the performance degradation by IMD hump, the method which is to control the operating point of amplifier according to its output power is presented. This method using envelope detection bias control is applied to the implemented class AB predistortered 16 W power amplifier. The measured result shows 10 dB improvement of $3^{rd}$ IMD performance in wide dynamic range of output power.