• Applied Chemistry for Engineering
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• v.10 no.5
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• pp.784-788
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• 1999

In this work, we analyzed the viscoelastic characteristics of electrochemically polymerized polypyrrole(PPy) thin film in various electrolyte solutions, $Na_2SO_4,\;Na_2CO_3$ and SDS + $NaClO_4$, using QCA. The characteristics of redox reaction of electrochemically polymerized PPy thin film for 180 sec in each electrolyte, was investigated in 0.1 M $NaClO_4$ electrolyte solution by cyclic voltammetry method. We used one side of quartz crystal electrode as a working electrode and measured the resonant frequency, resonant resistance and current as analytical parameters. As the results, we suggest that electrochemically polymerized PPy thin film in various electrolyte solutions shows tendency changing from elastic characteristics to viscoelastic one in the order of $ClO_4{^{-}}\;+\;DS^-,\;SO_4{^{-2}}$ and $CO_3{^{-2}}$.

• Journal of Industrial Technology
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• v.39 no.1
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• pp.15-19
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• 2019

This work focused on characterization of the starch degradation activity from extremophile strain Deinococcus geothermalis. Glucoamylase gene from D. geothermalis was cloned and overexpressed by pET-21a vector using E. coli BL21 (DE3). In order to characterize starch degrading activity of recombinant glucoamylase, enzyme was purified using HisPur Ni-NTA column. The recombinant glucoamylase from D. geothermalis exhibited the optimum temperature as $45^{\circ}C$ for starch degradation activity. And highly acido-stable starch degrading activity was shown at pH 2. For further optimization of starch degrading activity with metal ion, various metal ions ($AgCl_2$, $HgCl_2$, $MnSO_4{\cdot}4H_2O$, $CoCl_2{\cdot}6H_2O$, $MgSO_4$, $ZnSO_4{\cdot}7H_2O$, $K_2SO_4$, $FeCl_2{\cdot}4H_2O$, NaCl, or $CuSO_4$) were added for enzyme reaction. As results, it was found that $FeCl_2{\cdot}4H_2O$ or $MnSO_4{\cdot}4H_2O$ addition resulted in 17% and 9% improved starch degrading activity, respectively. The recombinant glucoamylase from D. geothermalis might be used for simultaneous saccharification and fermentation (SSF) process at high acidic conditions.

• Bulletin of the Korean Chemical Society
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• v.32 no.10
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• pp.3682-3686
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• 2011

The electrochemical properties of lithium-sulfur batteries with binary electrolytes based on DME and DOL, TEGDME and DOL mixed solvent containing $LiClO_4$, LiTFSI, and LiTF salts were investigated. The ionic conductivity of 1M LiTFSI and $LiClO_4$ electrolytes based on TEGDME and DOL increased as the volume ratio of DOL solvent increased, because DOL effectively reduces the viscosity of the above electrolytes medium under the same salts concentration. The first discharge capacity of lithium-sulfur batteries in the DME and DOL-based electrolyte followed this order: LiTFSI (1,000 mAh/g) > LiTF (850 mAh/g) > $LiClO_4$ (750 mAh/g). In case of the electrolyte based on TEGDME and DOL, the first discharge capacity of batteries followed this order: $LiClO_4$ (1,030 mAh/g) > LiTF (770 mAh/g) > LiTFSI (750 mAh/g). The cyclic efficiency of lithium-sulfur batteries at 1M $LiClO_4$ electrolytes is higher than that of batteries at other lithium salts-based electrolytes. Lithium-sulfur battery showed discharge capacity of 550 mAh/g until 20 cycles at all electrolytes based on DME and DOL solvent. By contrast, the discharge capacity of batteries was about 450 mAh/g at 1M LiTFSI and LiTF electrolytes based on TEGDME and DOL solvent after 20 cycles.

• Journal of Life Science
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• v.26 no.1
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• pp.68-74
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• 2016

Perchlorate (ClO₄⁻) is an emerging pollutant detected in surface water, soil, and groundwater. Previous studies provided experimental evidence of autotrophic ClO₄⁻ removal with elemental sulfur (S⁰) particles and activated sludge, which are inexpensive and easily available, respectively. In addition, ClO₄⁻ removal efficiency was shown to increase when an enrichment culture was used as an inoculum instead of activated sludge. PCR-DGGE was employed in the present study to investigate the microbial community in the enrichment culture that removed ClO₄⁻ autotrophically. Microorganisms in the enrichment culture showed 99.71% or more ClO₄⁻ removal efficiency after a 7-day incubation when the initial concentration was approximately 120 mg ClO₄⁻/l. Genomic DNA was isolated from the enriched culture and its inoculum (activated sludge), and used for PCR-DGGE analysis of 16S rRNA genes. Microbial compositions of the enrichment culture and the activated sludge were different, as determined by their different DGGE profiles. The difference in DGGE banding patterns suggests that environmental conditions of the enrichment culture caused a change in the microbial community composition of the inoculated activated sludge. Dominant DGGE bands in the enrichment culture sample were affiliated with the classes β-Proteobacteria, Bacteroidetes, and Spirochaetes. Further investigation is warranted to reveal the metabolic roles of the dominant populations in the ClO₄⁻ degradation process, along with their isolation.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.589-593
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• 2003

Silica based Planar Lightwave Circuits (PLC) have been applied to various kinds of wave-guided optical passive devices. SiO$_2$ (buffer) and GeO$_2$-SiO$_2$ (core) thick films have been deposited by Flame Hydrolysis Deposition (FHD). The SiO$_2$ films were produced by the flame hydrolysis reaction of halide materials such as SiCl$_4$, POCl$_3$ and BCl$_3$ into an oxy-hydrogen torch. The P concentration increased from 2.0 to 2.8 at％ on increasing the POCl$_3$/BCl$_3$ flow ratio. The refractive index increased from 1.4584 to 1.4605 on increasing the POC1$_3$/BC1$_3$ flow ratio from 0.6 to 2.6. The refractive index of GeO$_2$-SiO$_2$ films was controlled by the GeCl$_4$ flow rate. The refractive index increased from 1.4615 to 1.4809 on increasing the GeCl$_4$ flow rate from 30 to 120 sccm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.21-25
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• 2001

In this study, recovery of plasma etching· damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450 $\AA$/min at 30% additive Ar into $(Cl_2(80%)+CF_4 (20%))$ and 1100 $\AA$/min at 10% additive $O_2$ into $C(Cl_2(80%)+CF_4(20%))$. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.21-25
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• 2001

In this study, recovery of plasma etching damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of Cl$_2$/CF$_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450$\AA$/min at 30% additive Ar into (Cl$_2$(80%)+CF$_4$ (20%)) and 1100$\AA$/min at 10% additive $O_2$ into C(Cl$_2$(80%)+CF$_4$ (20%)). In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of Ti$_{x}$O$_{y}$ is recovered by $O_2$ recombination during rapid thermal annealing process.s.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.178-181
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• 2003

In this work, we etched PZT films with various additive gases ($O_2$ and Ar) in $Cl_2/CF_4$ plasmas, while mixing ratio was fixed at 8/2. After the etching, the plasma induced damages are characterized in terms of hysteresis curves, leakage current, retention properties, and switching polarization. When the electrical properties of PZT etched in $O_2$ or Ar added $Cl_2/CF_4$ were compared, the value of remanent polarization in $O_2$ added $Cl_2/CF_4$ plasma is higher than that in Ar. added plasma. The maximum etch rate of the PZT thin films was 145 nm/min for 30% Ar added $Cl_2/CF_4$ gas having mixing ratio of 8/2 and 110 nm/min for 10% $O_2$ added to that same gas mixture. In order to recover the ferroelectic properties of the PZT thin films after etching, we annealed the etched PZT thin films at $550^{\circ}C$ in an $O_2$ atmosphere for 10 min. From the hysteresis curves, leakage current, retention property and switching polarization, the reduction of the etching damage and the recovery via the annealing was turned out to be more effective when $O_2$ was added to $Cl_2/CF_4$ than Ar. X-ray diffraction (XRD) showed that the structural damage was lower when $O_2$ was added to $Cl_2/CF_4$. And the improvement in the ferroelectric properties of the annealed samples was consistent with the increased intensities of the (100) and the (200) PZT peaks.

• Journal of the Korean Ceramic Society
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• v.30 no.9
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• pp.740-746
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• 1993

TiO2-SnO2 fine powders prepared by coprecipitation from TiCl4-SnCl4 aqueous solution, and their crystal structures were studied. All the TiO2-SnO2 fine powders calcined at 180~$700^{\circ}C$ showed the complete solid solution between TiO2(rutile structure) and SnO2(rutile structure). This crystal structure of TiO2-SnO2 powders is thought to be originated mainly from the heterogeneous nucleation of Ti-hydroxde on the Sn-hydroxide with coherent structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.161-161
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• 2012

질화티타늄(Titanium Nitride, TiN)은 화학적 안정성이 우수하고, N/Ti 원소 비율에 따라 열전도성 및 전기전도성이 변화하는 특성을 가지고 있어서 Metal Insulator Silicon (MIS) 나 Metal Insulator Metal (MIM) capacitor의 metal electrode 물질로 적용되고 있다. $TiCl_4$와 $NH_3$ gas를 이용하여 $500^{\circ}C$ 이상의 고온 조건에서 Chemical Vapor Deposition (CVD) 법으로 TiN 박막을 증착하는 방식이 가장 널리 사용되고 있으나, TiN 박막 내의 Chlorine (Cl) 원소가 SiO2 두께와 누설전류 밀도를 증가시키는 요인으로 작용하므로 Cl의 거동 및 함량 제어를 통한 전기적인 특성의 향상 평가가 요구되고 있다[1-3]. 본 실험에서는 $SiO_2$ 위에 TiN을 적층 한 구조에서 magnetic sector type의 Secondary Ion Mass Spectrometry (SIMS)를 이용하여 Cl 원소의 검출도 개선 방법을 연구하였다. 일반적인 $Cs^+$ 이온을 이용하여 $Cl^-$ 이온을 검출할 경우에는 TiN 하부에 $SiO_2$가 존재함에 따른 charging effect와 mass interference가 발생되는 문제점이 관찰되었다. 이를 개선하기 위해 Cl과 Cs 원소가 결합된 $ClCs^+$ cluster ion을 검출하는 방법을 시도하였으나, Cl- 이온 검출 방식에 비해 오히려 낮은 검출도를 나타내었으나 Cl 원소가 속하는 halogen 족 원소의 높은 전자 친화도 특성을 이용한 $ClCs_2^+$ cluster ion을 검출하는 방법[4]을 적용한 경우에는 $ClCs^+$ 방식에 비해 검출도가 3order 개선되는 결과를 확보하였으며, 이 결과를 토대로 Cl dose ($atoms/cm^2$) 와 Rs (ohm/sq) 간의 상관 관계에 대해 고찰하고자 한다.