• Journal of Sensor Science and Technology
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• v.13 no.6
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• pp.436-445
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• 2004

In this study, a uroflowmetry system was developed to detect a voiding symptom conveniently at home or hospital. A implemented hardware was composed of mechanism and system circuit part, the software was developed to process uroflow data, graph display, extraction of parameter, and evaluation of congregate rate so as to analysis obtaining uroflow data. The following experiment was performed to evaluate an ability of classification and fitness. The curve pattern of uroflow was classified into each symptom. Various parameters were calculated in the curve pattern of each uroflow as follows. The parameters are MFR, AFR, VOL, VT, and FT. A significant difference among parameters was examined by a statistical analysis for extracted parameters between normal and abnormal experimental group. The uroflow data with the various symptom was divided into normal and abnormal group using fuzzy classifier. The result of the fuzzy classification using MFR and AFR was superior by 91.23 % than grouping evaluation including VOL.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.824-831
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• 2014

In this study, structural variations and overlay errors caused by multiple patterning lithography techniques to print narrow parallel metal interconnects are investigated. Resistance and capacitance parasitic of the six lines of parallel interconnects printed by double patterning lithography (DPL) and triple patterning lithography (TPL) are extracted from a field solver. Wide parameter variations both in DPL and TPL processes are analyzed to determine the impact on signal propagation. Simulations of 10% parameter variations in metal lines show delay variations up to 20% and 30% in DPL and TPL, respectively. Monte Carlo statistical analysis shows that the TPL process results in 21% larger standard variation in delay than the DPL process. Crosstalk simulations are conducted to analyze the dependency on the conditions of the neighboring wires. As expected, opposite signal transitions in the neighboring wires significantly degrade the speed of signal propagation, and the impact becomes larger in the C-worst metals patterned by the TPL process compared to those patterned by the DPL process. As a result, both DPL and TPL result in large variations in parasitic and delay. Therefore, an accurate understanding of variations in the interconnect parameters by multiple patterning lithography and adding proper margins in the circuit designs is necessary.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.12
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• pp.2255-2262
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• 2008

This paper presents a design parameter calculation methodology and its realization to construction for the damped oscillatory impulse current generator(ICG) modelled as damping factor $\alpha$. Matlab internal functions, "fzero" and "polyfit" are applied to find a which are solutions of second order nonlinear equation related with three wave parameters $T_{1},T_{2}$ and $I_{os}$. The calculation results for standard impulse current waveforms such as 4/10${\mu}s$, 8/20${\mu}s$ and 30/80${\mu}s$ show very good accuracy and this results make it possible to extend to generalization in the design of damped oscillatory lCG with any capacitor. 8/20${\mu}s$ ICG based on the calculated design circuit parameters is fabricated in consideration of the nonlinear load(MOV) variation. Comparisons of the tested waveforms with the designed estimation show error within 10% for the waveform tolerance recommended in IEC 60060-1 and IEEE std. C62.45.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.6
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• pp.498-508
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• 2015

In the simulation of photovoltaic (PV) power conditioning systems, PSIM is a widely accepted circuit simulation platform because of its fast speed and C-code support. PSIM provides two kinds of generic PV panel models: functional model and physical model. Whereas the functional model simulates PV in the standard test condition (STC) only, the physical model can emulate changing PV characteristics under varying temperatures and irradiation conditions and is thus more suitable for system simulation. However, the physical model requires complicated parameters from users, and thus it is prone to errors and is difficult to use. In this study, a new PSIM model for PV is presented to solve these problems. The proposed model utilizes manufacturers' datasheet values specified under STC only and excludes user-defined information from input parameters. To achieve good accuracy even in varying environmental conditions, single-diode model parameters are successively tuned to a time-varying virtual datasheet. Comparison with a conventional physical model shows that the proposed model provides more accurate simulation according to error analysis based on the EN50530 standard.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.1
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• pp.1-11
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• 2000

An accurate technique to retrieve HEMT modeling parameters with measurements of S-parameters and DC characteristics of HEMT is proposed. The extrinsic series resistances among HEMT modeling parameters are determined by the FUKUI method using the measured DC characteristics. And other parameters are determined by the measured S-parameters by HP 8510C Network Analyzer with various values of DC bias. The transconductance retrieved from the measured S-parameters, however, shows only 0.078% error comparing with the measured gm values. Therefore, the S-parameters measured directly for an individual transistor should be used for an accurate determination of the model parameters. The procedure for the retrieval of the circuit modeling parameters redescribed in detail in this thesis.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.164-166
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• 2004

In Recent, it became necessary to develope the technology about electrodeless fluorescent lamp according to demand of the electodeless fluorescent lamp system that used higher efficiency and advantage of long-lifetime. Especially, in the electordeless fluorescent lamp which used H-mode, efficiency of lamp is decided from matching parameter of antena and inverter, so it is of the utmost importance to design antena and inverter. Therefore, this paper used a transformer principle for an efficiency rising of electrodeless fluorescent lamp and interpreted an equivalent circuit, and confirmed a luminance characteristic by ferrite change of antenna and change of coil turns. Also, this paper used the thermoelectric element which can let you cool ferrite and antenna and confirmed the luminance characteristic along a change of ferrite and an antenna temperature.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.261-263
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• 1994

This paper deals with the on off arc characteristics of electromagnetic relay contacts contaminated by NaCl and $H_2SO_4$. In this paper, I have studied the characteristics of on-off voltage waveform. the contact errosion, contact surface analysis by SEM and EDAX under changed R-L parameter of testing circuit. After considers these result, I have tried to promote the diagnosis method and developed the contacts. As a results, (1) The arc duration and the numbers of arc occurrence characteristics are depended on contamination degree. The contamination degree is high when the arc characteristics is high. (2) Under clean condition, arc occurrence voltage, surge peak voltage, arc duration and the rate of contact errosion is lower than wet condition. (3) Surge peak voltage and arc duration is depended on L parameter. When L is High, the arc characteristics is high.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.2
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• pp.146-156
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• 2002

In this paper, a new virtual-straight line parameter determination methodology and fast time domain simulation technique for non-uniform interconnects are presented and verified. Time domain signal response of interconnects circuit considering the characteristic of non-linear transistor is performed by using model order reduction method. Since model order reduction method is peformed by using per unit length parameters, virtual- straight line parameters for non-uniform interconnects are determined. Its method is integrated into Berkeley SPICE and shown that time domain signal responses using proposed method have a good agreement with the results of conventional circuit simulator HSPICE. The proposed method can be efficiently employed in the high-performance VLSI circuit design since it can provide a fast and accurate time domain signal response of complicated multi - layer interconnects.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.5
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• pp.34-41
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• 2011

This paper presents a 24 channel capacitive touch sensing ASIC. This ASIC consists of analog circuit part and digital circuit part. Analog circuits convert user screen touch into electrical signal and digital circuits represent this signal change as digital data. Digital circuit also has an I2C interface for operation parameter reconfiguration from host machine. This interface guarantees the stable operation of the ASIC even against wide operation condition change. This chip is implemented with 0.18 um CMOS process. Its area is about 3 $mm^2$ and power consumption is 5.3mW. A number of EDA tools from Cadence and Synopsys are used for chip design.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.14 no.1
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• pp.109-117
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• 2000

A full bridge type double resonant high frequency resonant inverter to give VVVF function in the inverter used as power source of induction heating at high frequency is presented in this paper. This proposed inverter can reduce distribution of the switching current because of using the current of serial resonant circuit to the input current of the parallel one and this paper also realize the output control of independence irrespective of the switching frequency using Phase-shift. The analysis of the proposed circuit is generally described by using the normalized parameters. Also, the principle of basic operating and the its characteristics are estimated by the parameters, such as switching frequency, the variation of phase angle ($\phi$) of Phase-shift.