• 유체기계공업학회:학술대회논문집
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• 2004.12a
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• pp.754-760
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• 2004

The miniaturization and integration are trend of modern blood analyses. Micro-Bio-Fluidics plays an important role in a micro blood analysis system. In this paper, analysis and design technology for blood analysis system is presented. Numerical simulations of a blood flow in micro separator and reservoir are conducted. As a result, we suggest on-chip micro separator, which performed plasma separation from whole blood in micro channels.

• Journal of the Semiconductor & Display Technology
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• v.4 no.3 s.12
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• pp.17-22
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• 2005

LED lamp was designed by the serial-parallel integration of LED chips in metal-interconnection. The 7 $4.5{\times}4.5\;in^{2}$ masks were designed with the contact type of chrome-no mirror?dark. The white epitaxial thin film was grown by metal-organic chemical vapor deposition. The active layers were consisted with the serial order of multi-quantum wells for blue, green and red lights. The fabricated LED chip showed the electroluminescence peaked at 450, 560 and 600 nm. For the current injection of 20 mA, the operating voltage was measured to 4.25 V and the optical emission power was obtained to 0.7 $\mu$W.

• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.376-381
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• 2014

We present a CMOS rail-to-rail class-AB amplifier using dynamic current biasing to improve the delay response of the error amplifier in a low-dropout (LDO) regulator, which is a building block for a wireless power transfer receiver. The response time of conventional error amplifiers deteriorates by slewing due to parasitic capacitance generated at the pass transistor of the LDO regulator. To enhance slewing, an error amplifier with dynamic current biasing was devised. The LDO regulator with the proposed error amplifier was fabricated in a $0.35-{\mu}m$ high-voltage BCDMOS process. We obtained an output voltage of 4 V with a range of input voltages between 4.7 V and 7 V and an output current of up to 212 mA. The settling time during line transient was measured as $9{\mu}s$ for an input variation of 4.7-6 V. In addition, an output capacitor of 100 pF was realized on chip integration.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.3
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• pp.452-456
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• 2016

In this paper, a dual-channel readout amplifier array is realized in a standard $0.18{\mu}m$ CMOS technology for the applications of panoramic scan LADAR systems. Each channel consists of a PIN photodiode with 0.9 A/W responsivity and a 1.0 Gb/s readout amplifier(ROA). The proposed ROA shares the basic configuration of the previously reported feedforward TIA, except that it exploits a replica input to exclude a low pass filter(LPF), thus reducing chip area and improving integration level, and to efficiently reject common-mode noises. Measured results demonstrate that each channel achieves $70dB{\Omega}$ transimpedance gain, 829 MHz bandwidth, -22 dBm sensitivity for $10^{-9}BER$, -34 dB crosstalk between adjacent channels, and 45 mW power dissipation from a single 1.8 V supply.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.408-410
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• 2009

First demonstrators of bi-directional OLED microdisplay devices have been developed and integrated into see-through HMD optics. The device combines 'display' and 'imaging' by nested OLED pixels and photodetectors in a single CMOS chip. Major aim of this integration is to provide capabilities for eyetracking to achieve gaze-based human-displayinteraction.

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.31-35
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• 2004

A blue light emitting diode with 8 periods InGaN/GaN multi-quantum well structure grown by metal-organic chemical vapor deposition was fabricated with the inclusion of the metal-interconnection process in order to integrate the chips for light lamp. The quantum well structure provides the blue light photoluminescence peaked at 479.2 nm at room temperature. As decreasing the temperature to 20 K, the main peak was shifted to 469.7 nm and a minor peak at 441.9 nm appeared indicating the quantum dot formation in quantum wells. The current-voltage measurement for the fabricated LED chips shows that the metal-interconnection provides good current path with ohmic resistance of 41 $\Omega$.

• ETRI Journal
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• v.36 no.4
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• pp.635-642
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• 2014

Three-dimensional integrated circuits (3D ICs) implement heterogeneous systems in the same platform by stacking several planar chips vertically with through-silicon via (TSV) technology. 3D ICs have some advantages, including shorter interconnect lengths, higher integration density, and improved performance. Thermal-aware design would enhance the reliability and performance of the interconnects and devices. In this paper, we propose thermal-aware floorplanning with min-cut die partitioning for 3D ICs. The proposed min-cut die partition methodology minimizes the number of connections between partitions based on the min-cut theorem and minimizes the number of TSVs by considering a complementary set from the set of connections between two partitions when assigning the partitions to dies. Also, thermal-aware floorplanning methodology ensures a more even power distribution in the dies and reduces the peak temperature of the chip. The simulation results show that the proposed methodologies reduced the number of TSVs and the peak temperature effectively while also reducing the run-time.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.1
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• pp.52-60
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• 2003

For a System-on-a-Chip(SoC) comprised of multiple IP cores, various design techniques have been proposed to provide diverse test link configurations. In this paper, we introduce a new flag based Wrapped Core Linking Module (WCLM) that enables systematic integration of IEEE 1149.1 TAP'd cores and P1500 wrapped cores with requiring least amount of area overhead compared with other state-of-art techniques. The design preserves compatibility with standards and scalability for hierarchical access.

• Journal of Information Display
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• v.5 no.2
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• pp.1-5
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• 2004

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA ($240{\times}320$) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

• Journal of Power Electronics
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• v.14 no.4
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• pp.796-805
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• 2014

A digital controller with a low-power approach for point-of-load synchronous buck converters is discussed and compared with its analog counterpart to confirm its feasibility for system integration. The tri-mode digital controller IC in $0.35{\mu}m$ CMOS process is presented to demonstrate solutions that include a PID, quarter PID, and robust RST compensators. These compensators address the steady-state, stand-by, and transient modes according to the system operating point. An idle-tone free condition for ${\Sigma}-{\Delta}$ DPWM reduces the inherent tone noise under DC-excitation. Compared with that of the traditional approach, this condition generates a quasi-pure modulation signal. Experimental results verify the closed-loop performances and confirm the power-saving mechanism of the proposed controller.