• 한국산업융합학회 논문집
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• 제2권2호
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• pp.131-137
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• 1999

Package crack caused by the soldering process in the surface mounting plastic package is evaluated by applying the energy release rate criterion. The package crack formation depend on various parameters such as chip set, chip size, package thickness, package width, material properties and the moisture content etc. The effects of chip set and the other parameters were estimated during the analysis of package cracks which were located in the edge of the upper interface of the chip and the lower interlace of the die pad. From the results, it could be obtained that the more significant parameters to effect the chip set are chip width.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1673-1678
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• 2007

The use of flip-chip type electronic package offers numerous advantages such as reduced thickness, improved environmental compatibility, and downed cost. Despite numerous benefits, flip-chip type packages bare several reliability problems. The most critical issue among them is their electrical performance deterioration upon consecutive thermal cycles attributed to gradual delamination growth through chip and adhesive film interface induced by CTE mismatch driven shear and peel stresses. The electronic package in use is heated continuously by itself. When the crack at a weak site of the electronic package occurs, thermal deformationon the chip side is changed. Therefore, we can measure these micro deformations by using Moire interferometry and find out the crack length.

• 마이크로전자및패키징학회지
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• 제25권1호
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• pp.1-10
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• 2018

최근 플렉서블 OLED, 플렉서블 반도체, 플렉서블 태양전지와 같은 유연전자소자의 개발이 각광을 받고 있다. 유연소자에 밀봉 혹은 봉지(encapsulation) 기술이 매우 필요하며, 봉지 기술은 유연소자의 응력을 완화시키거나, 산소나 습기에 노출되는 것을 방지하기 위해 적용된다. 본 연구는 봉지막(encapsulation layer)이 반도체 칩의 내구성에 미치는 영향을 고찰하였다. 특히 다층 구조 패키지의 칩의 파괴성능에 미치는 영향을 칩의 center crack에 대한 파괴해석을 통하여 살펴보았다. 다층구조 패키지는 폭이 넓어 칩 위로만 봉지막이 덮고있는 "wide chip"과 칩의 폭이 좁아 봉지막이 칩과 기판을 모두 감싸고 있는 "narrow chip"의 모델로 구분하였다. Wide chip모델의 경우 작용하는 하중조건에 상관없이 봉지막의 두께가 두꺼울수록, 강성이 커질수록 칩의 파괴성능은 향상된다. 그러나 narrow chip모델에 인장이 작용할 때 봉지막의 두께가 두껍고 강성이 커질수록 파괴성능은 악화되는데 이는 외부하중이 바로 칩에 작용하지 않고 봉지막을 통하여 전달되기에 봉지막이 강하면 강한 외력이 칩내의 균열에 작용하기 때문이다. Narrow chip모델에 굽힘이 작용할 경우는 봉지막의 강성과 두께에 따라 균열에 미치는 영향이 달라지는데 봉지막의 두께가 작을 때는 봉지막이 없을 때보다 파괴성능이 나쁘지만 강성과 두께의 증가하면neutral axis가 점점 상승하여 균열이 있는 칩이 neutral axis에 가까워지게 되므로 균열에 작용하는 하중의 크기가 급격히 줄어들게 되어 파괴성능은 향상된다. 본 연구는 봉지막이 있는 다층 패키지 구조에 다양한 형태의 하중이 작용할 때 패키지의 파괴성능을 향상시키기 위한 봉지막의 설계가이드로 활용될 수 있다.

• 반도체디스플레이기술학회지
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• 제1권1호
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• pp.29-33
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• 2002

In the flip-chip process, the problem like electric defect or fatigue crack caused by the difference of CTE, between chip and substrate board had occurred. Underfill of flip chip to overcome this defects is noticed as important work developing in whole reliability of chip by protecting the chip against the external shock. In this paper, we introduce the underfill methods using mold and plunge and improvement of process and reliability, and the advantage which can be taken from embodiment of device.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.195-202
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• 2003

In this study, failure mechanisms of Au stud bumps/ACF flip chip joints were investigated underhigh current stressing condition. For the determination of allowable currents, I-V tests were performed on flip chip joints, and applied currents were measured as high as almost 4.2Amps $(4.42\times10^4\;Amp/cm^2)$. Degradation of flip chip joints was observed by in-situ monitoring of Au stud bumps-Al pads contact resistance. All failures, defined at infinite resistance, occurred at upward electron flow (from PCB pads to chip pads) applied bumps (UEB). However, failure did not occur at downward electron flow applied bumps (DEB). Only several $m\Omega$ contact resistance increased because of Au-Al intermetallic compound (IMC) growth. This polarity effect of Au stud bumps was different from that of solder bumps, and the mechanism was investigated by the calculation of chemical and electrical atomic flux. According to SEM and EDS results, major IMC phase was $Au_5Al_2$, and crack propagated along the interface between Au stud bump and IMC resulting in electrical failures at UEB. Therefore. failure mechanisms at Au stud bump/ACF flip chip Joint undo high current density condition are: 1) crack propagation, accompanied with Au-Al IMC growth. reduces contact area resulting in contact resistance increase; and 2) the polarity effect, depending on the direction of electrons. induces and accelerates the interfacial failure at UEBs.

• 대한기계학회논문집A
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• 제21권6호
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• pp.951-960
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• 1997

Package crack caused by the soldering process in the surface mounting plastic package is evaluated by applying the maximum energy release rate criterion. It could be shown that the crack propagation from the lower edge of the ie pad is easily occurred at the maximum temperature during the soldering process, where the pressure acting on the crack surface is assumed by the saturated vapor pressure at maximum temperature. The package crack formation depends on various parameters such as chip size, relative thickness, material properties, the moisture content and soldering temperature etc. The quantitative measure of the effects of the parameters could be easily obtained by using the taguchi's method which requires only a few kinds of combinations with such parameters. From the results, it could be obtained that the more significant parameters to effect the package reliability are the orders of Young's modulus, die pad size, down set, chip thickness and maximum soldering temperature.

• Smart Structures and Systems
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• 제18권6호
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• pp.1217-1231
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• 2016

In this research, a slotted patch antenna sensor is designed for wireless strain and crack sensing. An off-the-shelf RFID (radiofrequency identification) chip is adopted in the antenna sensor design for signal modulation. The operation power of the RFID chip is captured from wireless reader interrogation signal, so the sensor operation is completely battery-free (passive) and wireless. For strain and crack sensing of a structure, the antenna sensor is bonded on the structure surface like a regular strain gage. Since the antenna resonance frequency is directly related with antenna dimension, which deforms when strain occurs on the structural surface, the deformation/strain can be correlated with antenna resonance frequency shift measured by an RFID reader. The slotted patch antenna sensor performance is first evaluated through mechanics-electromagnetics coupled simulation. Extensive experiments are then conducted to validate the antenna sensor performance, including tensile and compressive strain sensing, wireless interrogation range, and fatigue crack sensing.

• Journal of Welding and Joining
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• 제16권4호
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• pp.92-97
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• 1998

Because of the low melting temperature of solder, each temperature cycle initiates an irrecoverable creep deformation at the solder interconnection which connects the package body with the PCB. The crack starts and propagates from the position where the creep deformation is maximized. This work has tried to compare and analyze the thermal fatigue life of solder interconnection which is affected by the lead material, the size of die pad, chip thickness, and interface delamination of 48-Pin TSOP under the temperature cycle ($0^{\circ}C$~1$25^{\circ}C$). The crack initiation position and thermal fatigue life which are calculated by using FEA method are well matched with the results of experiments. The thermal Fatigue life of copper lead frame is extended around 3.6 times longer than that of alloy 42 lead frame. It is maximized when the chip size is matched with the length of the lead. It tends to be extended as the thickness of chip got thinner. As the interfacial delamination between die pad and EMC is increased, the thermal fatigue life tends to decrease in the beginning of delamination, and increase after the delamination grew after 45% of the length of die pad.

• 한국전산구조공학회논문집
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• 제14권3호
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• pp.309-315
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• 2001

탄성 반도체 칩과 점탄성 접착제층의 계면에 존재하는 모서리 균열에 대한 응력확대계수를 조사하였다. 이러한 균열들은 자유 경계면 부근에 존재하는 응력 특이성으로 인해 발생할 수 있다. 계면 응력상태를 해석하기 위해서 시간 영역 경계요소법이 사용되었다. 작은 크기의 모서리 균열에 대한 응력확대계수가 계산되었다. 점탄성 이완으로 인해 응력확대계수의 크기는 시간이 경과함에 따라 작아진다.

• 마이크로전자및패키징학회지
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• 제8권3호
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• pp.25-30
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• 2001

반도체 칩과 얇은 접착제충의 계면에 존재하는 모서리 균열에 횡방향 인장변형률이 작용하는 경우에 대해 응력확대계수를 조사하고 있다. 이러한 균열들은 자유 경계면 부근에 존재하는 응력 특이성으로 인해 발생할 수 있다. 계면 응력상태를 해석하기 위해서 경계요소법이 사용되고 있다. 복합 응력확대계수의 크기는 균열의 크기에 의존하지만, 균열이 커지면 일정한 값에 수렴한다. 횡방향 인장변형률이 임계값에 도달하면, 계면 균열은 빠르게 전파되리라고 예상된다.