• Transactions of Materials Processing
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• v.17 no.8
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• pp.594-599
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• 2008

This paper presents a micro air pump based on the synthetic jet to supply reactant at the cathode side for micro fuel cells. The synthetic jet is a zero mass flux device that converts electrical energy into the momentum. The synthetic jet actuation is usually generated by a traditional PZT-driven actuator, which consists of a small cylindrical cavity, orifices and PZT diaphragms. Therefore, it is very important that the design parameters are optimized because of the simple configuration. To design the synthetic jet micro air pump, a numerical analysis has been conducted for flow characteristics with respect to various geometries. From results of numerical analysis, the micro air pump has been fabricated by the PDMS replication process. The most important design factors of the micro air pump in micro fuel cells are the small size and low power consumption. To satisfy the design targets, we used SP4423 micro chip that is high voltage output DC-AC converter to control the PZT. The SP4423 micro chips can operate from $2.2{\sim}6V$ power supply(or battery) and is capable of supplying up to 200V signals. So it is possible to make small size controller and low power consumption under 0.1W. The size of micro air pump was $16{\times}13{\times}3mm^3$ and the performance test was conducted. With a voltage of 3V at 800Hz, the air pump's flow rate was 2.4cc/min and its power consumption was only 0.15W.

• The Journal of the Acoustical Society of Korea
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• v.39 no.5
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• pp.435-440
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• 2020

Single-beam acoustic tweezers that are capable of manipulating micron-size particles in a non-contact manner have been used in many biological and biomedical applications. Current single-beam acoustic tweezer systems developed for in vitro experiments consist of a function generator and a power amplifier, thus the system is bulky and expensive. This configuration would not be suitable for in vivo and clinical applications. Thus, in this paper, we present a portable single-beam acoustic tweezer system and its performances of trapping and manipulating micron-size objects. The developed system consists of an Field Programmable Gate Array (FPGA) chip and two pulsers, and parameters such as center frequency and pulse duration were controlled by a Personal Computer (PC) via a USB (Universal Serial Bus) interface in real-time. It was shown that the system was capable of generating the transmitting pulse up to 20 MHz, and producing sufficient intensity to trap microparticles and cells. The performance of the system was evaluated by trapping and manipulating 40 ㎛ and 90 ㎛ in diameter polystyrene particles.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.777-788
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• 2014

This paper presents a wide output range, high power efficiency reconfigurable charge pump for driving touch panels with the high resistances. The charge pump is composed of 4-stages and its configuration automatically changes based on the required output voltage level. In order to keep the power efficiency over the wide output voltage range, internal blocks are automatically activated or deactivated by the clock driver in the reconfigurable charge pump minimizing the switching power loss due to the On and Off operations of MOSFET. In addition, the leakage current paths in each mode are blocked to compensate for the variation of power efficiency with respect to the wide output voltage range. This chip is fabricated using $0.18{\mu}m$ BCD process with high power MOSFET options, and the die area is $1870{\mu}m{\times}1430{\mu}m$. The power consumption of the charge pump itself is 79.13 mW when the output power is 415.45 mW at the high voltage mode, while it is 20.097 mW when the output power is 89.903 mW at the low voltage mode. The measured maximum power efficiency is 84.01 %, when the output voltage is from 7.43 V to 12.23 V.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.100-108
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• 2014

Low noise amplifier (LNA) is an integral component of RF receiver and frequently required to operate at wide frequency bands for various wireless system applications. For wideband operation, important performance metrics such as voltage gain, return loss, noise figure and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high impedance-matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that input impedance can be described in the form of second-order frequency response, where poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor located between the gate and the drain decreases the third-order harmonics at the output. Fabricated in $0.18{\mu}m$ CMOS process, the chip area of this wideband LNA is $0.202mm^2$, including pads. Measurement results illustrate that the input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 6-8 dB over 1.5 - 13 GHz. In addition, good linearity (IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

• Journal of Sensor Science and Technology
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• v.17 no.5
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• pp.369-374
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• 2008

A novel fiber optic surface plasmon resonance (SPR) sensor using cyclic olefin copolymer (COC) prism with the spectral modulation is presented. The SPR sensor chip is fabricated using the SU-8 photolithography, Ni-electroplating and COC injection molding process. The sidewall of the COC prism is partially deposited with Au/Cr (45/2.nm thickness) by e-beam evaporator, and the thermal bonding process is conducted for micro fluidic channels and optical fibers alignment. The SPR spectrum for a phosphate buffered saline (0.1.M PBS, pH.7.2) solution shows a distinctive dip at 1300.nm wavelength, which shifts toward longer wavelength with respect to the bovine serum albumin (BSA)concentrations. The sensitivity of the wavelength shift is $1.16\;nm{\cdot}{\mu}g^{-1}{\cdot}{\mu}l^{-1}$. From the wavelength of SPR dips, the refractive indices (RI) of the BSA solutions can be theoretically calculated using Kretchmann configuration, and the change rate of the RI was found to be $2.3{\times}10^{-5}RI{\cdot}{\mu}g^{-1}{\cdot}l^{-1}$. The realized fiber optic SPR sensor with a COC prism has clearly shown the feasibility of a new disposable, low cost and miniaturized SPR biosensor for biochemical molecular analyses.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.19-27
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• 1993

Capacitive pressure sensor for low pressure measurements has been fabricated by using $n^{+}$ epitaxial layer electrochemical etching stop and glass-to-silicon electrostatic bonding technique. The sensor had hybrid configuration of a sensor chip, which consists of sensor capacitor and reference capacitor, and two output signal detection IC chips. A fabricated sensor, with a $1.0{\times}1.0 mm^{2}$ square size and a $10{\mu}m$ thick flat diaphragm, showed a 7.1 pF zero pressure capacitance, and 5.2 % F.S, sensitivity in 10 KPa pressure range. By using a capacitance to voltage converter, the thermal zero shift of 0.051 %F.S./$^{\circ}C$ and the thermal sensitivity shift of 0.12 %F.S./$^{\circ}C$ for temperature range of $5{\sim}45^{\circ}C$ were obtained.

• Journal of the Korea Society of Computer and Information
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• v.14 no.10
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• pp.23-29
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• 2009

This paper presents the development of embedded network educational system. This is an educational equipment which enables user to have training over Network Configuration and Embedded network programming practice on Internet environment. The network education system is developed on embedded environment. based on using ethernet interface. On the development environment. PAX255 VLSI chip is used for the processor, the ADSv1.2 for debugging, uC/OS276 for RTOS. The system software was developed using C language. The ping program provided an educational environment for the student to compile and load it to run after doing practice of demonstration behavior. Afterwards programming procedure starts the step-by-step training just like the demonstration function. In other words, programming method how to design the procedure of ARP operation and ICMP operation is explained.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.12
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• pp.654-664
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• 2000

Thin films of ZnO are deposited by using an RF magnetron sputtering with varying the substrate temperature(RT~39$0^{\circ}C$) and RF power(50~250W). Cu-doped ZnO(denoted by ZnO:Cu) films have also been prepared by co-spputtering of a ZnO target on which some Cu-chips are attached. Different substrate materials, such as Si, $SiO_{2}/Si$, sapphire, DLC/Si, and poly-diamond/Si, are employed to compare the c-axial growth features of deposited ZnO films. Texture coefficient(TC) values for the (002)-preferential growth are estimated from the XRD spectra of deposited films. Optimal ranges of RF powers and substrate temperatures for obtaining high TC values are determined. Effects of Cu-doping conditions, such as relative Cu-chip sputtering areas, $O_{2}/(Ar+O_{2})$ mixing ratios, and reactor pressures, on TC values, electrical resistivities, and relative Cu-compositions of deposited ZnO:Cu films have been systematically investigated. XPS study shows that the relative densities of metallic $Cu(Cu^{0})$ atoms and $CuO(Cu^{2+})$-phases within deposited films may play an important role of determining their electrical resistivities. It should be noted from the experimental results that highly resistive(> $10^{10}{\Omega}cm$ ZnO films with high TC values(> 80%) can be achieved by Cu-doping. SAW devices with ZnO(or Zn):Cu)/IDT/$SiO_{2}$/Si configuration are also fabricated to estimate the effective electric-mechanical coupling coefficient($k_{eff}^{2}$) and the insertion loss. It is observed that the devices using the Cu-doped ZnO films have a higher $k_{eff}^{2}$ and a lower insertion loss, compared with those using the undoped films.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1055-1063
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• 2013

Low noise amplifiers(LNAs) are an integral component of RF receivers and are frequently required to operate at wide frequency bands for various wireless systems. For wideband operation, important performance metrics such as voltage gain, return loss, noise figures and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high input matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor between gate and drain decreases the third-order harmonics at the output. Fabricated in $0.18{\mu}m$ CMOS process, the chip area of this LNA is $0.202mm^2$, including pads. Measurement results illustrate that input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 7~8 dB over 1.5~13 GHz. In addition, good linearity(IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.7
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• pp.750-755
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• 2003

This paper proposes a new three-line balun. The equivalent circuit of the proposed three-line balun is presented, and impedance matrix［Z］of the equivalent circuit is derived from the relationship between the current and voltage at each port. The design equation for a given set of balun impedance at input and output ports is presented using［S］parameters, which is transferred fom impedance matrix,［Z］. To demonstrate the feasibility and validity of design equation, multi-layer ceramic(MLC) chip balun operated in the 2.4 GHz ISM band frequency is designed and fabricated by the use of the low temperature co-fired ceramic(LTCC) technology. By employing both the proposed new three-line balun equivalent circuit and multi-layer configuration provided by LTCC technology, the 2012 size MLC balun is realized. Measured results of the multi-layer LTCC three-line balun match well with the full-wave electromagnetic simulation results, and measured in band-phase and amplitude balances over a wide bandwidth are excellent. This proposed balun is very easily applicable to multi-layer structure using LTCC as shown in the paper, and also can be realized with microstrip lines on PCB. This distinctive performance is very favorable for wireless communication systems such as wireless LAN(Local Area Network) and Bluetooth applications.