• Journal of the Korean Chemical Society
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• v.36 no.6
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• pp.889-893
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• 1992

A very sensitive adsorptive stripping voltammetric method is studied on the gallium-morin complex at a hanging mercury drop electrode (HMDE) in 0.1 M acetate buffer solution. The effects of various analytical conditions are discussed on the reduction peak current of the adsorbed complex on the suface of HMDE. Interferences by other trace metals and surfactant are also discussed. Detection limit is 1.7 nM of gallium with 60 seconds deposition time, and the relative standard deviation (n = 7) at 4 ${\mu}$g/l gallium is 2.8%.

• Journal of Hydrogen and New Energy
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• v.18 no.2
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• pp.124-131
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• 2007

Methane is partially oxidized to produce the syngas by the lattice oxygen of metal oxides in the absence of gaseous oxygen. The present work deals with ferrite including copper component, which does not chemisorb methane, to investigate the suppression of the carbon deposition during the reduction of metal oxides by methane. Iron-based oxides of $Cu_xFe_{3-x}O_4$(X=0.25, 0.5, 1.0) was synthesized by the co-precipitation method. Thermogravimetric Analysis(TGA) was used to observe the isothermal reduction behavior of $Cu_xFe_{3-x}O_4$ and $Fe_3O_4$ at $600-900^{\circ}C$ under methane atmosphere. The crystal structures of reduced specimens were characterized by X-rays powder diffraction(XRD) technique. From the analyses of TGA, it is concluded that the reduction kinetics of $CuFe_2O_4$ was the fastest among $Fe_3O_4$ and $Cu_xFe_{3-x}O_4$(X=0.25, 0.5, 1.0). The X-ray diffraction analyses indicated that $Cu_xFe_{3-x}O_4$ was decomposed to Cu and $Fe_3O_4$ phase at $600^{\circ}C$ and was reduced to Cu and Fe phase at $800^{\circ}C$. $Fe_3O_4$, which was reduced at $900^{\circ}C$, showed Fe, graphite and $Fe_3C$ phases. On the contrary, $Cu_xFe_{3-x}O_4$ does not show the graphite or $Fe_3C$ phases. This results infer that Cu component suppress the carbon deposition on Cu-ferrite.

• Korean Journal of Materials Research
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• v.11 no.1
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• pp.20-26
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• 2001

The deposition characteristics of MOCVO Cu using the (hfac)Cu(I) (1,5-DMCOD)(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato Cu(I) 1,5-dimethyl-cyclooctadine) as a precursor have been investigated in terms of the effects of hydrogen and H(hfac) ligand addition with He carrier gas. MOCVD Cu using a Helium carrier gas showed a low deposition rate (20~$125{\AA}/min$) at the substrate temperature range of 180~$230^{\circ}C$. Moreover, the Cu film deposited at 19$0^{\circ}C$ was very thin (~$700{\AA}$) and showed the lowest resistivity value of $2.8{\mu}{\Omega}-cm$. The deposition rate of MOCVD Cu using $H_2$or H(hfac) addition was significantly enhanced especially at the low temperature region (180~$190^{\circ}C$). Furthermore, thinner Cu films (~$500{\AA}$) provided low resistivity (3.6~$2.86{\mu}{\Omega}-cm$). From surface reflectance measurement, very thin films deposited by using different gas system revealed good surface morphology comparable with sputtered Cu film ($300^{\circ}C$, vacuum-anneal). Hence, Cu film using (hfac)Cu(1,5-DMCOD) as a precursor is expected as a good seed layer in the electrochemical deposition process for Cu metallization.

• Journal of Powder Materials
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• v.12 no.2 s.49
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• pp.146-150
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• 2005

An optimum route to synthesize $Al_2O_3$-based composite powders with homogeneous dispersion of carbon nanotubes (CNTs) was investigated. CNTs/Metal/$Al_2O_3$ nanocomposite powders were fabricated by thermal chemical vapor deposition of $C_2H_2$ gas over metal/$Al_2O_3$ nanocomposite catalyst prepared by selective reduction of metal oxide/$Al_2O_3$ powders. The FT-Raman spectroscopy analysis revealed that the CNTs have single- and multi-walled structure. The CNTs with the diameter of 25-43 nm were homogeneously distributed in the metal/$Al_2O_3$ powders, and their characteristics were strongly affected by a kind of metal catalyst and catalyst size. The experimental results show that the composite powder with required size and dispersion of CNTs can be realized by control of synthesis condition.

• Journal of Industrial Technology
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• v.43 no.1
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• pp.25-31
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• 2023

Stretchable and flexible electronics that comply with dynamic movements and micromotion of the human tissues can enable real-time monitoring of physiologic signals onto the human skin and in the brain, respectively. Especially, gallium based liquid metal stretchable electronics can offer human-interactive biosensors to monitor various physiologic parameters. However, the liquid-like nature, surface oxidation and contamination by organic materials, and low biostability of the liquid metals have still limited the long-term use as bioelectronics. Here we introduced electrochemical deposition without oxidation pathways to overcome these practical challenges in liquid metal bioelectronics. CNT/PDDA composite with reduction way and PEDOT:BF₄ with oxidation way under organic solvent are suggested as rationally designed material engineering approaches. We confirmed that the structures with the soft, flexible, and stretchable liquid metal platform can successfully detect dopamine with a high sensitivity and selectivity, record neural signals including action potentials without scar formation, and monitor physiologic signals such as EMG and ECG.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1137-1144
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• 2013

$TiO_2$ composites with seven different carbon materials (activated carbons, graphite, carbon fibers, single-walled carbon nanotubes, multi-walled carbon nanotubes, graphene oxides, and reduced graphene oxides) that are virgin or treated with nitric acid are prepared through an evaporation method. The photocatalytic activities of the as-prepared samples are evaluated in terms of $H_2$ production from aqueous methanol solution (photo-catalytic reduction: PCR) and degradation of aqueous pollutants (phenol, methylene blue, and rhodamine B) (photocatalytic oxidation: PCO) under AM 1.5-light irradiation. Despite varying effects depending on the kinds of carbon materials and their surface treatment, composites typically show enhanced PCR activity with maximum 50 times higher $H_2$ production as compared to bare $TiO_2$. Conversely, the carbon-induced synergy effects on PCO activities are insignificant for all three substrates. Colorimetric quantification of hydroxyl radicals supports the absence of carbon effects. However, platinum deposition on the binary composites displays the enhanced effect on both PCR and PCO reactions. These differing effects of carbon materials on PCR and PCO reactions of $TiO_2$ are discussed in terms of physicochemical properties of carbon materials, coupling states of $TiO_2$/carbon composites, interfacial charge transfers. Various surface characterizations of composites (UV-Vis diffuse reflectance, SEM, FTIR, surface area, electrical conductivity, and photoluminescence) are performed to gain insight on their photocatalytic redox behaviors.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.199-199
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• 2016

Commercially pure titanium (cp-Ti) and Ti alloys (typically Ti-6Al-4V) display excellent corrosion resistance and biocompatibility. Although the chemical composition and topography are considered important, the mechanical properties of the material and the loading conditions in the host have, conventionally. Ti and its alloys are not bioactive. Therefore, they do not chemically bond to the bone, whereas they physically bond with bone tissue. The electrochemical deposition process provides an effective surface for biocompatibility because large surface area can be served to cell proliferation. Electrochemical deposition method is an attractive technique for the deposition of hydroxyapatite (HAp). However, the adhesions of these coatings to the Ti surface needs to be improved for clinical used. Plasma electrolyte oxidation (PEO) enables control in the chemical com position, porous structure, and thickness of the $TiO_2$ layer on Ti surface. In addition, previous studies h ave concluded that the presence of $Ca^{+2}$ and ${PO_4}^{3-}$ ion coating on porous $TiO_2$ surface induced adhesion strength between HAp and Ti surface during electrochemical deposition. Silicon (Si) in particular has been found to be essential for normal bone and cartilage growth and development. Zinc (Zn) plays very important roles in bone formation and immune system regulation, and is also the most abundant trace element in bone. The objective of this work was to study electrochemical characteristcs of Zn and Si coating on Ti-6Al-4V by PEO treatment. The coating process involves two steps: 1) formation of porous $TiO_2$ on Ti-6Al-4V at high potential. A pulsed DC power supply was employed. 2) Electrochemical tests were carried out using potentiodynamic and AC impedance methoeds. The morphology, the chemical composition, and the micro-structure an alysis of the sample were examined using FE-SEM, EDS, and XRD. The enhancements of the HAp forming ability arise from $Si/Zn-TiO_2$ surface, which has formed the reduction of the Si/Zn ions. The promising results successfully demonstrate the immense potential of $Si/Zn-TiO_2$ coatings in dental and biomaterials applications.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• Journal of Surface Science and Engineering
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• v.46 no.4
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• pp.168-174
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• 2013

In this study, low-cost, high-speed deposition, excellent processability, high mechanical strength and electrical conductivity, chemical stability and corrosion resistance of stainless steel to meet the obsessive-compulsive (0.1 mm or less) were selected CrN thin film. new price reduction to sputter deposition causes - the possibility of sublimation source for inductively coupled plasma Cr rods were attempts by DC bias. 0.6 Pa Ar inductively coupled plasmas of 2.4 MHz, 500 W, keeping Cr Rod DC bias power 30 W (900 V, 0.02 A) is applied, $N_2$ flow rate of 0.5, 1.0, 1.5 sccm by varying the characteristics of were analyzed. $N_2$ flow rate increases, decreases and $Cr_2N$, CrN was found to increase. In addition to corrosion resistance and contact resistance, corrosion resistance, electrical conductivity was evaluated. corrosion current density than $N_2$ 0 sccm was sure to rise in all, $N_2$ 1 sccm at $4.390{\times}10^{-7}$ (at 0.6 V) $A{\cdot}cm^{-2}$, respectively. electrical conductivity process results when $N_2$ 1 sccm 28.8 $m{\Omega}/cm^2$ with the lowest value of the contact resistance was confirmed that came out. The OES (SQ-2000) and QMS (CPM-300) using a reactive deposition process to add $N_2$ to maintain a uniform deposition rate was confirmed that.