• Title/Summary/Keyword: Chemical hydride

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A study on the growth behavior of AlN single crystal growth by hydride vapor phase epitaxy (Hydride vapor phase epitaxy에 의한 후막 AlN 단결정의 성장 거동에 관한 연구)

  • Seung-min Kang
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.34 no.4
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    • pp.139-142
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    • 2024

  • Along with the use of wide bandgap energy materials such as SiC and GaN in power semiconductors and the development trend of devices, many research results have been reported, including the success of research on AlN single crystals with higher energy gaps and the development of 2-inch single crystal wafers. However, AlN single crystals grown using chemical vapor deposition have been developed into thin films less than a few micrometers thick, but there are almost no results with thicknesses greater than that. Therefore, in this study, we attempted to grow by applying HVPE (Hydride vapor phase epitaxy), one of the chemical vapor deposition methods. The grown AlN single crystal was manufactured using self-designed equipment, and we attempted to establish the conditions for manufacturing AlN single crystals on sapphire wafer. We would like to characterize the growth behavior through an optical microscope observation.

  • https://doi.org/10.6111/JKCGCT.2024.34.4.139 인용 PDF