• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.1-6
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• 2020

In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.5
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• pp.367-372
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• 2013

Hydrogen storage as a metal hydride is the most promising alternative because of its relatively large hydrogen storage capacities near room temperature. TiMn2-based C14 Laves phases alloys are one of the promising hydrogen storage materials with easy activation, good hydriding-dehydriding kinetics, high hydrogen storage capacity and relatively low cost. In this work, multi-component, hyper-stoichiometric $Ti_{0.85}Zr_{0.13}(Fe_x-V)_{0.56}Mn_{1.47}Ni_{0.05}$ C14 Laves phase alloys were prepared by a vacuum induction melting for a hydrogen storage tank. Since pure vanadium (V) is quite expensive, the substitution of the V element in these alloys has been tried and some interesting results were achieved by replacing V by commercial ferrovanadium (FeV) raw material. In addition, the melt-spinning process, which was applied to the manufacturing of some of these alloys, could make the plateau slopes much flatter, which resulted in the increase of reversible hydrogen storage capacity. The improvement of sloping properties of melt-spun $Ti_{0.85}Zr_{0.13}(Fe_x-V)_{0.56}Mn_{1.47}Ni_{0.05}$ alloys was mainly attributed to the homogeneity of chemical composition.

• Journal of the Korean Electrochemical Society
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• v.9 no.2
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• pp.95-99
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• 2006

Electrochemical properties were studied for a single particle of active material of hydrogen storage alloy $(MmNi_{3.55}Co_{0.75}Mn_{0.4}Al_{0.3})$ and nickel hydroxides $(NiOH)_2$ for the secondary Nickel Metal Hydride (Ni-MH) batteries using the microelectrode, which was manipulated to make electrical contact with an active material particle for cyclic voltammograms (CV) and potential-step experiments. As a result of CV test, it was found that three kinds of hydrogen oxidation peaks at -0.9, -0.75 and -0.65 V and hydrogen evolution peak at -0.98 V for hydrogen storage alloy were separately observed and two kinds of peaks of proton oxidation/reduction at 0.45 and 0.32 V and oxygen evolution reaction (OER) at 0.6 V for nickel hydroxides were also more clearly observed. Furthermore hydrogen diffusion coefficient within a single particle was also found to vary the order between $10^{-9}\;and\;10^{-10}cm^2/s$ over the course of hydrogenation and dehydrogenation process for potential-step experiments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.348-352
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• 2016

In this paper, GaN film was grown on AlN/PSS by hydride vapor phase epitaxy compared with GaN on planar sapphire. Thin AlN layer for buffer layer was deposited on patterned sapphire substrate (PSS) by metal organic chemical vapor deposition. Surface roughness of GaN/AlN on PSS was remarkably decreased from 28.31 to 5.53 nm. Transmittance of GaN/AlN grown on PSS was lower than that of planar sapphire at entire range. XRD spectra of GaN/AlN grown on PSS corresponded the wurzite structure and c-axis oriented. The full width at half maximum (FWHM) values of ${\omega}$-scan X-ray rocking curve (XRC) for GaN/AlN grown on PSS were 196 and 208 arcsec for symmetric (0 0 2) and asymmetric (1 0 2), respectively. FWHM of GaN on AlN/PSS was improved more than 50% because of lateral overgrowth and AlN buffer effect.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.4
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• pp.157-161
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• 2006

InGaN layers on GaN templated sapphire (0001) substrates were grown by mixed-source hydride vapor phase epitaxy (HVPE) method. In order to get InGaN layers, Ga-mixed In metal and $NH_3$ gas were used as group III and group V source materials, respectively. The InGaN material was compounded from chemical reaction between $NH_3$ and indium-gallium chloride farmed by HCl flowed over metallic In mixed with Ga. The grown layers were confirmed to be InGaN ternary crystal alloys by X-ray photoelectron spectroscopy (XPS). In concentration of the InGaN layers grown by selective area growth (SAG) method was investigated by the photoluminescence (PL) and cathodoluminescence (CL) measurements. Indium concentration was estimated to be in the range 3 %. Moreover, as a new attempt in obtaining InAlGaN layers, the growth of the thick InAlGaN layers was performed by putting small amount of Ga and Al into the In source. We found the new results that the metallic In mixed with Ga (and Al) as a group III source material could be used in the growth process of the In(Al)GaN layers by the mixed-source HVPE method.

• Bulletin of the Korean Chemical Society
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• v.35 no.5
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• pp.1523-1528
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• 2014

Silicon quantum dots (Si QDs) were synthesized by etching silicon nanopowder with aqueous hydrofluoric acid (HF) and nitric acid ($HNO_3$). Then, the hydride-terminated Si QDs (H-Si QDs) were functionalized by 1- octadecene (ODE). By only controlling the etching time, the maximum luminescence peak of octadecylterminated Si QDs (ODE-Si QDs) was tuned from 404 nm to 507 nm. The average optical gap was increased from 2.60 eV (ODE-Si QDs-5 min) for 5 min of etching to 3.20 eV (ODE-Si QDs-15 min) for 15 min of etching, and to 3.40 eV (ODE-Si QDs-30 min) for 30 min of etching. The electron affinities (EA), ionization potentials (IP), and quasi-particle gap (${\varepsilon}^{qp}_{gap}$) of the Si QDs were determined by cyclic voltammetry (CV). The quasi-particle gaps obtained from the CV were in good agreement with the average optical gap values from UV-vis absorption. In the case of the ODE-Si QDs-30 min sample, the difference between the quasi-particle gap and the average optical gap gives the electron-hole Coulombic interaction energy. The additional electronic levels of the ODE-Si QDs-30 min and ODE-Si QDs-15 min samples determined by the CV results are interpreted to have originated from the Si=O bond terminating Si QD.

• Bulletin of the Korean Chemical Society
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• v.27 no.5
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• pp.759-761
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• 2006

The compound B(C6F5)3 and its variations have been widely employed as alkyl carbanion abstracting reagents to produce metallocene cations for olefin polymerization.1-3 Weakly coordinating anions containing boron can greatly improve the activity of metallocene catalysts used in industrial olefin polymerization4 and thus group IV and V metallocene complexes of the organohydroborate anions have been intensively investigated.5 Recently, many organohydroborate metallocene complexes have been reported by Shore and co-workers.6-8 A common structural feature of those complexes is the three-center two electron M-H-B bond, like that observed in transition metal tetrahydroborate complexes but the reactivity and fluxional behavior of organohydroborate complexes are unlike those of the tetrahydroborate analogues.6 Although many of those metallocenes have been synthesized, few complexes could be used in the olefin polymerization and then this laboratory has been involved in the chemistry of the cyclic organohydroborate anions, and their group IV metallocene derivatives for the catalyst.9 Described here is recent work that led to the preparation of a novel cyclic organohydroborate hafnocene complex (h5-C5H5)2Hf ？(μ-H)2BC8H14 ,Cl. The hafnocene complex contains the three-center two electron bond Hf-H-B10 in which the hydride abstraction for olefin polymerization may occur.

• Bulletin of the Korean Chemical Society
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• v.23 no.4
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• pp.563-566
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• 2002

Copper complexes have been directly incorporated into cellulose acetate (CA) and the resulting light blue colored homogeneous films of 5-20 wt.% copper acetate complex concentrations are found to be thermally stable up to 200 $^{\circ}C$. The reaction chem istry of Cu in CA has been investigated by reacting them with small gas molecules such as CO, H2, D2, O2, NO, and olefins in the temperature range of 25-160 $^{\circ}C$, and various Cu-hydride, -carbonyl, -nitrosyl, and olefin species coordinated to Cu sites in CA are characterized by IR and UV/Vis spectroscopic study. The reduction of Cu(II) complexes by reacting with H2 gas at the described conditions results in the formation of Cu2O and copper metal nanoparticles in CA, and their sizes in 30-120 nm range are found to be controlled by adjusting metal complex concentration in CA and/or the reduction reaction conditions. These small copper metal particles show various catalytic reactivity in hydrogenation of olefins and CH3CN; CO oxidation; and NO reduction reactions under relatively mild conditions.

• Journal of the Korean Chemical Society
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• v.46 no.5
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• pp.427-436
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• 2002

Reaction of $trans-[FeHCl(dppe)_2]$ (1) with KSeCN led to the formation of $trans-[FeH(NCSe)(dppe)_2](2).$ Compound 2 $·CH_2Cl_2$ was structurally characterized by X-ray diffraction, in which the hydride ligand appears to be involved in the dihydrogen bonding of the type M-H${\cdot}$${\cdot}$${\cdot}$H-C.

• Bulletin of the Korean Chemical Society
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• v.30 no.2
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• pp.327-333
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• 2009

For the Pt-catalyzed nucleophilic addition of enones, Pt complexes were employed in the presence of various phosphine ligands and $H_2\;(or\;Et_3SiH),$ affording inter- and intra-molecular coupling products in good to modest yield. Depending on reaction protocols, different phosphine ligands were required to optimize the conditions. In the aldol reaction, the Pt catalyst involving $P(2,4,6-(OMe)_3C_6H_2)3\;or\;P(p-OMeC_6H_4)_3$ was chosen. Michael reaction proceeds in good yields in the presence of $P(p-CF_3C_6H_4)_3$. Regarding the activity of the reductants, $H_2$ exhibited superior activity to $Et_3SiH$, resulting in a shorter reaction time and higher yield in the aldol and Michael reaction. In light of the deuterium labeling studies, the catalytic cycle including the hydrometalation of the enones by the platinum hydride species was proposed.