• 제목/요약/키워드: Chemical doping

검색결과 535건 처리시간 0.027초

NiO/La2O3-ZrO2/WO3 Catalyst Prepared by Doping ZrO2 with La2O3 and Modifying with WO3 for Acid Catalysis

  • Sohn, Jong-Rack;Choi, Hee-Dong;Shin, Dong-Chul
    • Bulletin of the Korean Chemical Society
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    • 제27권6호
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    • pp.821-829
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    • 2006
  • A series of catalysts, $NiO/La_2O_3-ZrO_2/WO_3$, for acid catalysis was prepared by the precipitation and impregnation methods. For the $NiO/La_2O_3-ZrO_2/WO_3$ samples, no diffraction lines of nickel oxide were observed, indicating good dispersion of nickel oxide on the catalyst surface. The catalyst was amorphous to X-ray diffraction up to 300 ${^{\circ}C}$ of calcination temperature, but the tetragonal phase of $ZrO_2$ and monoclinic phase of $WO_3$ by the calcination temperatures from 400 ${^{\circ}C}$ to 700 ${^{\circ}C}$ were observed. The role of $La_2O_3$ in the catalyst was to form a thermally stable solid solution with zirconia and consequently to give high surface area and acidity. The high acid strength and high acidity were responsible for the W=O bond nature of complex formed by the modification of $ZrO_2$ with $WO_3$. For 2-propanol dehydration the catalyst calcined at 400 ${^{\circ}C}$ exhibited the highest catalytic activity, while for cumene dealkylation the catalyst calcined at 600 ${^{\circ}C}$ showed the highest catalytic activity. 25-$NiO/5-La_2O_3-ZrO_2/15-WO_3$ exhibited maximum catalytic activities for two reactions due to the effects of $WO_3$ modifying and $La_2O_3$ doping.

GC/MS에 의한 뇨 중 내인성 에스트로겐의 Profiling (Urinary Profiling of Endogeneous Estrogens Using GC/MS)

  • 이선화;양윤정;김태욱;팽기정;정봉철
    • 대한화학회지
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    • 제41권4호
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    • pp.186-197
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    • 1997
  • 성 호르몬으로서의 역할과 암 성장의 잠재적 저해 효과를 지니고 있는 에스트로겐의 대사체들을 동시에 분석하기 위하여 Serdolit AD-2 수지와 효소 가수분해, 액체-액체 추출방법을 이용한 전처리 과정을 확립하였으며, MSTFA/TMSCl 혼합액에 의해 trimethylsilylether 형태로 유도체화된 에스트로겐들을 GC/MS의 SIM(selected ion monitorning) 방법으로 동시에 분석, 정량할 수 있는 조건을 설정하였다. 그 결과 회수율은 80.97~97.81%이었고, within-a-day 및 day-to-day 분석에서의 RSD값은 각각 0.24~25.35%, 1.05~23.94%이었으며, 이 방법으로는 소변 내에 존재하는 19종의 에스트로겐 대사체들을 정량하여 한국인 정상인 참고치(여자:22~35세, 남자: 39~57세)를 설정하였다.

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Characterization of Sol-Gel Derived Antimony-doped Tin Oxide Thin Films for Transparent Conductive Oxide Application

  • Woo, Dong-Chan;Koo, Chang-Young;Ma, Hong-Chan;Lee, Hee-Young
    • Transactions on Electrical and Electronic Materials
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    • 제13권5호
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    • pp.241-244
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    • 2012
  • Antimony doped tin oxide (ATO) thin films on glass substrate were prepared by the chemical solution deposition (CSD) method, using sol-gel solution synthesized by non-alkoxide precursors and the sol-gel route. The crystallinity and electrical properties of ATO thin films were investigated as a function of the annealing condition (both annealing environments and temperatures), and antimony (Sb) doping concentration. Electrical resistivity, carrier concentration, Hall mobility and optical transmittance of ATO thin films were improved by Sb doping up to 5~8 mol% and annealing in a low vacuum atmosphere, compared to the undoped tin oxide counterpart. 5 mol% Sb doped ATO film annealed at $550^{\circ}C$ in a low vacuum atmosphere showed the highest electrical properties, with electrical resistivity of about $8{\sim}10{\times}10^{-3}{\Omega}{\cdot}cm$, and optical transmittance of ~85% in the visible range. Our research demonstrates the feasibility of low-cost solution-processed transparent conductive oxide thin films, by controlling the appropriate doping concentration and annealing conditions.

CVD로 in-situ 도핑된 다결정 3C-SiC 박막의 전기적 특성 (Electrical characteristics of in-situ doped polycrystalline 3C-SiC thin films grown by CVD)

  • 김강산;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.199-200
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    • 2009
  • This paper describes the electrical properties of polycrystalline (poly) 3C-SiC thin films with different nitrogen doping concentrations. The in-situ-doped poly 3C-SiC thin films were deposited by using atmospheric-pressure chemical vapor deposition (APCVD) at $1200^{\circ}C$ with hexamethyldisilane (HMDS: $Si_2$ $(CH_3)_6)$ as a single precursor and 0 ~ 100 sccm of $N_2$ as the dopant source gas. The peaks of the SiC (111) and the Si-C bonding were observed for the poly 3C-SiC thin films grown on $SiO_2/Si$ substrates by using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR) analyses, respectively. The resistivity of the poly 3C-SiC thin films decreased from $8.35\;{\Omega}{\cdot}cm$ for $N_2$ of 0 sccm to $0.014\;{\Omega}{\cdot}cm$ with $N_2$ of 100 sccm. The carrier concentration of the poly 3C-SiC films increased with doping from $3.0819\;{\times}\;10^{17}$ to $2.2994\;{\times}\;10^{19}\;cm^{-3}$, and their electronic mobilities increased from 2.433 to $29.299\;cm^2/V{\cdot}S$.

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CSA도핑된 폴리아닐린 이차 도핑과 전기화학적 특성 (Electrochemical Characteristics of Camphorsulfonic Acid Doped Polyaniline by Secondary Doping)

  • 박종호;조승구
    • 전기화학회지
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    • 제7권3호
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    • pp.138-142
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    • 2004
  • 본 연구에서 CSA로 도핑된 EB와 LEB 형태의 폴리아닐린 필름을 ITO전극위에 m-cresol, chloroform 혼합용액을 도포시켜 제조하였다. UV 실험결과로부터 m-cresol에 의한 이차 도핑 효과를 확인 할 수 있었으며, m-cresol의 양이 증가할수록 폴리아닐린 필름의 전도도는 증가하였다. 폴리아닐린의 전기화학적 실험결과 LEB로 제작된 폴리아닐린 전극의 산화$\cdot$환원 피크 전류는 EB로 제작된 폴리아닐린 전극보다 더 크고 가역적인 것을 CV를 통해 구할 수 있었다. 또한 전하전달 저항은 m-cresol의 양이 증가할수록 감소하였으며, LEB/CSA전극의 전하 전달 저항 갈이 EB/CSA 전극보다 작았다.

ITiO박막의 전기적 특성 향상을 위한 공정변수의 최적화 (Optimization of process parameters for improvement of electrical properties of ITiO film)

  • 최우진;성열문;곽동주
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2011년도 제42회 하계학술대회
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    • pp.1430-1431
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    • 2011
  • To develope the transparent conducting oxide(TCO) films is one of the essential technologies to improve various properties of electro-optical devices such as dye-sensitized solar cells(DSCs). ITiO thin film is considered one of the candidates as TCO electrodes of DSCs because it shows many advantages such as the high transparency in long wavelength range above 700nm and excellent properties of electrical necking between nanoporous TiO2 and ITiO transparent electrode. This paper presents the effect of sputtering processes on the structural, electrical and optical properties of ITiO thin film deposited by r.f. magnetron sputtering. The effect of doping concentration of Ti on the chemical compounds and C axis-orientation properties of were mainly studied experimentally. The morphology and electrical properties were greatly influenced by deposition processes, especially by the doping concentration of Ti. The $3.8{\times}10^{-4}{\Omega}{\cdot}cm$ of minimum volume resistivity were obtained under the experimental conditions of gas pressure 7mTorr, substrate temperature $300^{\circ}C$, and 2.5% of Ti doping concentration.

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Significant enhancement of critical current density by effective carbon-doping in MgB2 thin films

  • Ranot, Mahipal;Lee, O.Y.;Kang, W.N.
    • 한국초전도ㆍ저온공학회논문지
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    • 제15권2호
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    • pp.12-15
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    • 2013
  • The pure and carbon (C)-doped $MgB_2$ thin films were fabricated on $Al_2O_3$ (0001) substrates at a temperature of $650^{\circ}C$ by using hot-filament-assisted hybrid physical-chemical vapor deposition technique. The $T_c$ value for pure $MgB_2$ film is 38.5 K, while it is between 30 and 35 K for carbon-doped $MgB_2$ films. Expansion in c-axis lattice parameter was observed with increase in carbon doping concentration which is in contrast to carbon-doped $MgB_2$ single crystals. Significant enhancement in the critical current density was obtained for C-doped $MgB_2$ films as compared to the undoped $MgB_2$ film. This enhancement is most probably due to the incorporation of C into $MgB_2$ and the high density of grain boundaries, both help in the pinning of vortices and result in improved superconducting performance.

MnO2 as an Effective Sintering Aid for Enhancing Piezoelectric Properties of (K,Na)NbO3 Ceramics

  • Jeong, Seong-Kyu;Hong, In-Ki;Do, Nam-Binh;Tran, Vu Diem Ngoc;Cho, Seong-Youl;Taib, Weon Pil;Lee, Jae-Shin
    • 한국분말재료학회지
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    • 제17권5호
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    • pp.399-403
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    • 2010
  • The effects of $MnO_2$ doping on the crystal structure, ferroelectric, and piezoelectric properties of (K,Na)$NbO_3$ (KNN) ceramics have been investigated. $MnO_2$ was found to be effective in enhancing the densification and grain growth during sintering. X-ray diffraction analysis indicated that Mn ions substituted B-site Nb ions up to 2 mol%, however, further doping induced unwanted secondary phases. In comparison with undoped KNN ceramics, the well developed microstructure and the substitution to B-sites in 2 mol% Mn-doped KNN ceramics resulted in significant improvements in both piezoelectric coupling coefficient and electromechanical quality factor.

산소환원반응 촉매용 질소 도핑된 탄소나노섬유의 제조 (Synthesis of Nitrogen-doped Carbon Nanofibers for Oxygen Reduction Reaction)

  • 안건형;이은환;안효진
    • 한국분말재료학회지
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    • 제23권6호
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    • pp.420-425
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    • 2016
  • N-doped carbon nanofibers as catalysts for oxygen-reduction reactions are synthesized using electrospinning and carbonization. Their morphologies, structures, chemical bonding states, and electrochemical performance are characterized. The optimized N-doped carbon nanofibers exhibit graphitization of carbon nanofibers and an increased nitrogen doping as well as a uniform network structure. In particular, the optimized N-doped carbon nanofibers show outstanding catalytic activity for oxygen-reduction reactions, such as a half-wave potential ($E_{1/2}$) of 0.43 V, kinetic limiting current density of $6.2mAcm^{-2}$, electron reduction pathways (n = 3.1), and excellent long-term stability after 2000 cycles, resulting in a lower $E_{1/2}$ potential degradation of 13 mV. The improvement in the electrochemical performance results from the synergistic effect of the graphitization of carbon nanofibers and the increased amount of nitrogen doping.

Characterization of Combined Micro- and Nano-structure Silicon Solar Cells using a POCl3 Doping Process

  • Jeong, Chaehwan;Kim, Changheon;Lee, Jonghwan;Yi, Junsin;Lim, Sangwoo;Lee, Suk-Ho
    • Current Photovoltaic Research
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    • 제1권1호
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    • pp.69-72
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    • 2013
  • Combined nano- and micro-wires (CNMWs) Si arrays were prepared using PR patterning and silver-assisted electroless etching. A $POCl_3$ doping process was applied to the fabrication of CNMWs solar cells. KOH solution was used to remove bundles in CNMWs and the etching time was varied from 30 to 240 s. The lowest reflectance of 3.83% was obtained at KOH etching time of 30 s, but the highest carrier lifetime of $354{\mu}s$ was observed after the doping process at 60 s. At the same etching time, a $V_{oc}$ of 574 mV, $J_{sc}$ of $28.41mA/cm^2$, FF of 74.4%, and Eff. of 12.2% were achieved in the CNMWs solar cell. CNMWs solar cells have potential for higher efficiency by improving the post-process and surface-rear side structure.