• Korean Chemical Engineering Research
• /
• v.53 no.3
• /
• pp.333-338
• /
• 2015

In this study, we investigated carbonation-regeneration and agglomeration characteristics of dry sorbents. Experiment has been proceeded in the batch-type reactor, which is made of quartz: 0.05 m of I.D and 0.8 m in height. The sorbents that is collected at the cyclone of the carbonation reactor of continuous process were used in this study. The reactivity was studied at the various concentrations of water vapor, $N_2$ and $CO_2$ in the fluidizing gas at regeneration reaction. As a result, the reactivity increased as the regeneration temperature increased, the reactivity decreased as the concentration of water vapor increased. The absorption capacity showed the highest value in case of using $N_2$ 100% as regeneration gas. And decreased in order of $H_2O+N_2$, $CO_2$ 100% and $H_2O+CO_2$. The agglomeration characteristics were investigated according to the particle sizes and concentrations of water vapor at carbonation reaction. As a result, the particle with smaller size and higher concentration of water vapor showed the higher agglomeration characteristic.

• Bulletin of the Korean Chemical Society
• /
• v.14 no.5
• /
• pp.603-610
• /
• 1993

The crystal structure of dehydrated $Ag_{5.6}K_{6.4}-A$, zeolite A ion-exchanged with $K^+\;and\;Ag^+$ as indicated and dehydrated at 360$^{\circ}$C, has been determined by single-crystal X-ray diffraction techniques. Also determined were the structures of the products of the reactions of this zeolite with 0.1 Torr of Cs vapor at 250$^{\circ}$C for 48 h and 72 h, and with 0.1 Torr of Rb vapor at 250$^{\circ}$C for 24 h. The structures were solved and refined in the cubic space group Pm3m at 21(l)$^{\circ}$C (a= 12.255(l) ${\AA}$ , 12.367(l) ${\AA}$, 12.350(l) ${\AA}$, and 12.263(l) ${\AA}$, respectively). Dehydrated $Ag_{5.6}K_{6.4}$-A was refined to the final error indices $R_1= 0.044\;and\;R_2=0.037$ with 202 reflections for which I>3${\sigma}$(I). The crystal structures of the reaction products were refined to $R_1=0.087\;and\;R_2= 0.089$ with 157 reflections, $R_1=0.080\;and\;R_2= 0.087$ with 161 reflections, and $R_1= 0.071\;and\;R_2=0.061$ with 88 reflections, respectively. In the structure of $Ag_{5.6}K_{6.4}-A,\;K^+$ ions block all 8-oxygen rings, and one reduced Ag atom is found per sodalite cavity. Also, ca. 4.6 $Ag^+ ions\;and\;3.4 K^+ ions$ are found at 6-ring sites in the large cavity. The crystal structures of the reaction products show that all $K^+$ and $Ag^+$ ions have been reduced, and that all K^+$ atoms have left the zeolite. Cs or Rb species are found at three different crystallographic sites: 3.0 $Cs^+\;or\;3.0Rb^+$ ions per unit cell occupy 8-ring centers, ca. 8.0 $Cs^+ ions\;or\;5.7 Rb^+$ ions, are found on threefold axes opposite 6-rings deep in the large cavity, and ca. 2.5 $Cs^+\;or\;2.3 Rb^+ ions are found on threefold axes in the sodalite unit. Also, 1 $Rb^+$ ion lies opposite a 4-ring. Silver atoms, corresponding to 75% or 40% occupancy of hexasilver clusters stabilized by coordination to $Cs^+\;or\;Rb^+$ ions, are found at the centers of the large cavities. In the crystal structures of dehydrated Ag_{5.6}K_{6.4}-A$ reacted with Cs vapor, excess Cs atoms are absorbed and these form (locally) cationic clusters such as $(Cs_4)3^+\;and\;(Cs_6)4^+$.

• Journal of Industrial Technology
• /
• v.4
• /
• pp.37-41
• /
• 1984

Deposits of SiC has been formed by a chemical vapor deposition technique involving the application of gaseous mixture of $CH_3SiCl_3$ (MTS) and $H_2$ onto graphite substrate. These are non-fluid bed deposits prepared in an induction-heated reactor. From the experimental results, the deposition reaction of SiC is controlled by surface reaction mechanism at the temperature range between $1,100^{\circ}C$ and $1,400^{\circ}C$. The morphology of the SiC deposits changes from amorphous type to coarse, faceted structure as temperature increase.

• Journal of the Korean Ceramic Society
• /
• v.38 no.4
• /
• pp.388-392
• /
• 2001

저압 화학증착법으로 등방성 흑연 기판 위에 탄화규소 증착층을 제조하였다. 반응관 내부의 전체 반응압력(이하 반응압력)을 1.5torr-100torr로 변화시켜 증착층의 미세구조에 미치는 영향을 조사하였다. 120$0^{\circ}C$ 이하에서는 전체 반응압력 변화에 상관없이 일정하게 낮은 증착속도를 보였으며, 미세구조는 round-top 구조를 나타내었다. 125$0^{\circ}C$, 10torr를 기준으로 증착온도와 반응압력이 증가함에 따라 미세구조가 round-top 구조에서 angular, faceted 구조로 변하였으며, 이는 반응압력이 증가함에 따라 증착기구가 표면반응에서 물질전달로 전이하였기 때문이다.

• Journal of the Korean Ceramic Society
• /
• v.29 no.9
• /
• pp.681-688
• /
• 1992

Ultrafine Si3N4 and Si3N4+SiC mixed powders were synthesized through thermal plasma chemical vapor deposition(CVD) using a hybrid plasma, which was characterized by the supersposition of a radio-frequency plasma and arc jet. The reactant SiCl4 was injected into an arc jet and completely decomposed in a hybrid plasma, and the second reactant CH4 and/or NH3 mixed with H2 were injected into the tail flame through double stage ring slits. In the case of ultrafine Si3N4 powder synthesis, reaction efficiency increased significantly by double stage injection compared to single stage one, although crystallizing behaviors depended upon injection speed of reactive quenching gas (NH3+N2) and injection method. For the preparation of Si2N4+SiC mixed powders, N/C composition ratio could be controlled by regulating the injection speed of NH3 and/or CH4 reactant and H2 quenching gas mixtures as well as by adjusting the reaction space.

• Journal of Surface Science and Engineering
• /
• v.18 no.1
• /
• pp.5-11
• /
• 1985

Titanium was deposited onto AISI-430 stainless steel by chemical vapor deposition from $TiI_4\;and\;H_2$ gas mixture. Effects of temperature, flow rate of the gas, and $TiI_4$ partial pressure on the deposition rate were thoroughly investigated. The deposition rate of Ti was found to be constant at the given temperature and was increased with increasing temperature. The rate is controlled by surface reaction at the flow rate of gas higher than 500 ml/min, whereas at the flow rate lower than that by diffusional process. It is also interesting to note that the reaction mechanism changes at 1050$^{\circ}C$, at temperatures lower than 1050$^{\circ}C$ the activation energy is 56.9 Kcal/mol, whilst at temperatures higher than that is 8.3 Kcal/mol.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.452-455
• /
• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD(radio frequency plasma-assisted chemical vapor deposition). In order to increase the nucleation density, the WC-Co substrate was polished with 3$\mu\textrm{m}$ diamond paste. And the WC-Co substrate was pretreated in HNO$_3$: H$_2$O = 1:1 and O$_2$ plasma. In H$_2$-CH$_4$gas mixture, the crystallinity of thin film increased with decreasing CH$_4$concentration at 800W discharge power and 20torr reaction pressure. In H$_2$-CH$_4$-O$_2$gas mixture, the crystallinity of thin film increased with increasing O$_2$concentration at 800W discharge power, 20torr reaction pressure and 4% CH$_4$concentration.

• Journal of Surface Science and Engineering
• /
• v.18 no.3
• /
• pp.116-124
• /
• 1985

Chemical vapor deposition of $SnO_2$ on Pyrex glass substrate has been investigated using $SnCl_4$ and Oxygen at relatively low temperatures(300-500$^{\circ}C$). The critical flow rate, which delineated the surface reaction controlled region from the mass transfer controlled region, was increased with deposition temperature. The apparent activation energy obtained in surface reaction controlled region was about 6Kcal/mole. The results show that deposition rate, electrical conductivity and transmittance were affected mainly by partial pressure of $SnCl_4$, but little by partial pressure f oxygen. The % transmission of 5000A-thick $SnO_2$ film was about 90% in visible spectrum region and sheet resistance was varied in 0.1-10${\Omega}$ per square shaped portion of the outer surface of the oxide.

• Journal of the Korean Vacuum Society
• /
• v.21 no.1
• /
• pp.48-54
• /
• 2012

Carbon coils could be synthesized on nickel catalyst layer-deposited silicon oxide substrate using $C_2H_2$ and $H_2$ as source gases and SF6 as an additive gas under thermal chemical vapor deposition system. The geometries of as-grown carbon materials were investigated with increasing the reaction temperature as the increment of $25^{\circ}C$ from $650^{\circ}C$ up to $800^{\circ}C$. At $650^{\circ}C$, the embryos for carbon coils were formed. With increasing the reaction temperature to $700^{\circ}C$, the coil-type geometries were developed. Further increasing the reaction temperature to $775^{\circ}C$, the development of wave-like nano-sized coils, instead of nano-sized coils, and occasional appearance of micro-sized carbon coils could be observed. Fluorine in $SF_6$ additive may shrink the micro-sized coil diameter via the reduction of Ni catalyst size by fluorine's etching role. Finally, the preparation of the micro-sized carbon coils having the smaller coil diameters, compared with the previously reported ones, could be possible using $SF_6$ additive.

• Journal of the Korean Chemical Society
• /
• v.37 no.4
• /
• pp.401-407
• /
• 1993

The titanium oxide thin films were prepared by air oxidation and water vapor oxidation. The electrochemical properties of the electrodes were studied in 1M NaOH solution. The peak potentials of oxygen reduction from cyclic voltammogram techniques were observed at aroung -0.9 ∼ -1.0 V vs. SCE and the reaction was totally irreversible process. The electrochemical properties of titanium dioxide electrodes prepared by water vapor oxidation exhibited different from the air oxidized electrodes, but it was similar to single crystal $TiO_2$. The peak potentials of oxygen reduction were observed at slightly more positive than flat band potentials and depended on pH.