• Bulletin of the Korean Chemical Society
• /
• v.18 no.4
• /
• pp.385-389
• /
• 1997

We report on the development of a new method to control the coverage of a metal film prepared with immersion method. An Sb species in solution adsorbed irreversibly at an open circuit potential (∼0.2 V) as an oxygenous Sb(Ⅲ) on a clean Au electrode, and the adsorbates showed voltammetric features in the potential range from 0.1 V to - 0.4 V. The full coverage of the Sb adsorbates was ∼0.45. On the contrary, the Sb species in solution did not adsorb at all on iodine-covered Au electrode surfaces, when the iodine coverages were more than 0.25. As the iodine coverage decreased below 0.25, however, the irreversible adsorption of Sb took place and the coverage of Sb increased accordingly. This electrochemical behavior has been interpreted as the penetration of the adsorbing Sb species in solution through open spaces among the iodine adlattices of coverages less than 0.25. With the manipulation of the iodine coverage, the controllable range of Sb coverage was from 0 to 0.45, i.e. the full coverage of Sb. In addition, the reversible deposition of Sb on an iodine-saturated Au electrode with voltammetric scan has been observed, which is contrasted with the adsorptive behavior of Sb on the clean Au electrode.

• Applied Chemistry for Engineering
• /
• v.23 no.4
• /
• pp.377-382
• /
• 2012

CdS thin films have been widely used as a buffer layer of CIGS semiconductor solar cells to reduce the lattice mismatch between transparent electrode and absorber layer. In order to prepare the CdS films with high transparency and low resistivity, they were deposited by varying Cd concentration with the constant S concentration in the solution using chemical bath deposition method. They were analyzed in terms of structural, optical and electrical properties of CdS films according to the $[S^{2-}]/[Cd^{2+}]$ ratio. In the case of Cd concentration higher than S concectration, CdS thin films were formed mainly by cluster- by-cluster formation due to the homogeneous reaction between Cd and S in the solution. Therefore the grain size increased and the transmittance decreased. On the other hand, in the case of Cd concentration lower than S concentration, CdS films were formed by heterogeneous reaction on the substrate rather than in the solution. The CdS films have the grains with the uniform circular shape of a few hundreds ${\AA}$. As the Cd concentration increased in the solution, the $[S^{2-}]/[Cd^{2+}]$ ratio decreased and the resistivity decreased by the increase in the carrier concentration due to the formation S vacancy by the excess Cd.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.05a
• /
• pp.34.2-34.2
• /
• 2011

The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.329-329
• /
• 2011

We investigated the thin films of poly(3-hexylthiophene) (P3HT) and C61-butyric acid methylester (PCBM) prepared by ultrahigh vacuum (UHV) electrospray depositioin (ESD) by using in-situ XPS, UPS and ambient-pressure AFM. The morphology, chemical structures, and interface properties of these materials, most widely used for bulk heterojunction organic solar cells, were studied depending on the ESD solution compositions and concentrations. We found that the solution conductivity and flow rate as well as applied voltage are the important parameters for stable electrospray and film formation. These results suggest that UHV ESD is a viable method for the deposition of multilayers of polymers under UHV condition. We also discuss the energy level alignment for the various deposition conditions at the interface, which is one of the most important operating parameters of the bulk heterojunction organic solar cells.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.200-200
• /
• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Journal of Hydrogen and New Energy
• /
• v.21 no.5
• /
• pp.390-397
• /
• 2010

0.5wt% Ru/$\alpha-Al_2O_3$ catalysts are prepared by deposition-precipitation method for the preferential CO oxidation In order to investigate the effect of pH on the Ru dispersion and particle size, the pH of precursor solution is adjusted to between 5.5 and 9.5. 0.5wt% Ru/$\alpha-Al_2O_3$ catalyst prepared at the pH of 6.5 has high Ru dispersion of 17.9% and small particle size of 7.7nm. In addition, 0.5wt% Ru/$\alpha-Al_2O_3$ catalyst prepared at the pH 6.5 is easily reduced at low temperatures below $150^{\circ}C$ due to high dispersion of $RuO_2$ particle and shows high CO conversion over 90% in the wide temperature range between $100^{\circ}C$ and $160^{\circ}C$. Moreover, the deposition-precipitation is a feasible method to improve the Ru dispersion as compared to the impregnation method. The 0.5wt% Ru/$\alpha-Al_2O_3$ catalyst prepared by deposition-precipitation exhibits higher CO conversion than 0.5wt% Ru/$\alpha-Al_2O_3$ catalysts prepared by impregnation due to higher metal dispersion and better reducibility at low temperature.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.9
• /
• pp.2488-2492
• /
• 2010

A method is described for the determination of the Po nuclides in a water sample. After the Po nuclides were purified from interfering elements in a water sample using a manganese dioxide precipitation followed by a solvent extraction method, the Po nuclides were deposited onto the silver plate. A large volume of the water sample was effectively pretreated with manganese dioxide precipitation method. To determine the optimum conditions for plating Po, the effects of the pH, volume, temperature and time on the Po deposition were investigated in hydrochloric acid solution. The investigated determination method of Po nuclides with solvent extraction was applied to a tap water sample.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.67 no.10
• /
• pp.1317-1321
• /
• 2018

PVDF as a semicrystal polymer, having a structure with C-F dipole moments, has been widely investigated because of its excellent chemical stability, mechanical strength, and ferroelectricity. In this study, ferroelectic ${\beta}$ type - PVDF layer was prepared by using an electrostatic spray deposition method and the effects of the addition of Ni-nitrate in precursor solution on the properties of PVDF layer were evaluated. Crystallinity and chemical structure of the PVDF layer were analyzed by a X-ray diffraction and Fourier Transform Infrared Spectrophotometer. Surface structure and fractured cross section of the layer were examined by a field emission-scanning electron microscope. LCR meter was used to obtain the dielectric properties of the layer. As the addition of an inorganic metal salt in PVDF sol, ${\beta}$ type - PVDF crystals were appeared in the hydrated metal salts doped-layer since the strong hydrogen bondings $(O-H{\cdots}F-C)_n$ due to high polarity of OH- were formed.

• Corrosion Science and Technology
• /
• v.15 no.2
• /
• pp.84-91
• /
• 2016

The transport and deposition of corrosion products in pressurized water nuclear reactor (PWR) steam generators have led to corrosion (SCC, denting etc.) problems. Lancing, mechanical cleaning and chemical cleaning have been used to reduce these problems. The methods of lancing and mechanical cleaning have limitations in removing corrosion products due to the structure of steam generator tubes. But high temperature chemical cleaning (HTCC) with EDTA is the most effective method to remove corrosion products regardless of the structure. However, EDTA in chemical cleaning aqueous solution and chemical cleaning environments affects the integrity of materials used in steam generators. The nuclear power plants have to perform the pre-test (also called as qualification test (QT)) that confirms the effect on the integrity of materials after HTCC. This is one of the series studies that assess the effect, and this study determines the effects of 20 % EDTA aqueous solution on defective tubes in high temperature chemical cleaning environments. The depth and magnitude of defects in steam generator (SG) tubes were measured by eddy current test (ECT) signals. Surface analysis and magnitude of defects were performed by using SEM/EDS. Corrosion rate was assessed by weight loss of specimens. The ECT signals (potential and depth %) of defective tubes increased marginally. But the lengths of defects, oxides on the surface and weights of specimens did not change. The average corrosion rate of standard corrosion specimens was negligible. But the surfaces on specimens showed traces of etching. The depth of etching showed a range on the nanometer. After comprehensive evaluation of all the results, it is concluded that 20 % EDTA aqueous solution in high temperature chemical cleaning environments does not have a negative effect on defective tubes.

• Journal of the Korean Applied Science and Technology
• /
• v.19 no.4
• /
• pp.335-338
• /
• 2002

A new process for polymeric gate insulator in field-effect transistors was proposed. Fourier transform infrared absorption spectra were measured in order to identify ODPA-ODA polyimide. Its breakdown field and electrical conductivity were measured. All-organic thin-film transistors with a stacked-inverted top-contact structure were fabricated to demonstrate that thermally evaporated polyimide films could be used as a gate insulator. As a result, the transistor performances with evaporated polyimide was similar with spin-coated polyimide. It seems that the mass-productive in-situ solution-free processes for all-organic thin-film transistors are possible by using the proposed method without vacuum breaking.