• Title/Summary/Keyword: Chemical Solution Deposition Method

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In-Situ Optical Monitoring of Electrochemical Copper Deposition Process for Semiconductor Interconnection Technology

  • Hong, Sang-Jeen;Wang, Li;Seo, Dong-Sun;Yoon, Tae-Sik
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.2
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    • pp.78-84
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    • 2012
  • An in-situ optical monitoring method for real-time process monitoring of electrochemical copper deposition (CED) is presented. Process variables to be controlled in achieving desired process results are numerous in the CED process, and the importance of the chemical bath conditions cannot be overemphasized for a successful process. Conventional monitoring of the chemical solution for CED relies on the pH value of the solution, electrical voltage level for the reduction of metal cations, and gravity measurement by immersing sensors into a plating bath. We propose a nonintrusive optical monitoring technique using three types of optical sensors such as chromatic sensors and UV/VIS spectroscopy sensors as potential candidates as a feasible optical monitoring method. By monitoring the color of the plating solution in the bath, we revealed that optically acquired information is strongly related to the thickness of the deposited copper on the wafers, and that the chromatic information is inversely proportional to the ratio of $Cu$ (111) and {$Cu$ (111)+$Cu$ (200)}, which can used to measure the quality of the chemical solution for electrochemical copper deposition in advanced interconnection technology.

Aerosol Jet Deposition of $CuInS_2$ Thin Films

  • Fan, Rong;Kong, Seon-Mi;Kim, Dong-Chan;Chung, Chee-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.159-159
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    • 2011
  • Among the semiconductor ternary compounds in the I-III-$VI_2$ series, $CulnS_2$ ($CulnSe_2$) are one of the promising materials for photovoltaic applications because of the suitability of their electrical and optical properties. The $CuInS_2$ thin film is one of I-III-$VI_2$ type semiconductors, which crystallizes in the chalcopyrite structure. Its direct band gap of 1.5 eV, high absorption coefficient and environmental viewpoint that $CuInS_2$ does not contain any toxic constituents make it suitable for terrestrial photovoltaic applications. A variety of techniques have been applied to deposit $CuInS_2$ thin films, such as single/double source evaporation, coevaporation, rf sputtering, chemical vapor deposition and chemical spray pyrolysis. This is the first report that $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) technique which is a novel and attractive method because thin films with high deposition rate can be grown at very low cost. In this study, $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) method which employs a nozzle expansion. The mixed fluid is expanded through the nozzle into the chamber evacuated in a lower pressure to deposit $CuInS_2$ films on Mo coated glass substrate. In this AJD system, the characteristics of $CuInS_2$ films are dependent on various deposition parameters, such as compositional ratio of precursor solution, flow rate of carrier gas, stagnation pressure, substrate temperature, nozzle shape, nozzle size and chamber pressure, etc. In this report, $CuInS_2$ thin films are deposited using the deposition parameters such as the compositional ratio of the precursor solution and the substrate temperature. The deposited $CuInS_2$ thin films will be analyzed in terms of deposition rate, crystal structure, and optical properties.

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Fabrication of 2-Dimensional ZnO Nanowall Structure (2차원 ZnO 나노벽 구조 제조)

  • Kim, Young-Jung;Cao, Guozhong;Kim, Yeong-Cheol;Ahn, Seung-Joon;Min, Joon-Won
    • Journal of the Korean Ceramic Society
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    • v.42 no.7 s.278
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    • pp.521-524
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    • 2005
  • ZnO 2-D nanowall structure with around 100 nm thickness, which is composed of tens of nm scale ZnO single crystals, was fabricated through the low temperature chemical solution growth method. Electro Chemical Deposition (ECD) technique was applied to attach the ZnO seed crystals on ITO coated glass substrate. The ZnO nanowall structure was grown in the 0.015 mol$\%$ of aqueous solution of zinc nitrate and hexamethenamine at 60$^{\circ}C$ for 20 - 40 h. The nanowall structure depends on the ECD condition or the applied voltage and duration time. The nanowall shows a photoluminescence around 550 - 700 nm spectrum range.

Optimization of auto-deposition for Po-210 in environmental sample

  • Lee, Myung-Ho;Cho, Hye-Ryun;Park, Kyoung-Kyun;Joe, Kih-Soo;Kim, Won-Ho;Jung, Euo-Chang;Jee, Kwang-Yong
    • Proceedings of the Korean Radioactive Waste Society Conference
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    • 2007.11a
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    • pp.327-328
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    • 2007
  • The deposition conditions for plating polonium have been optimized with deposition parameters such as pH, volume and temperature of the deposition and deposition time. In the tap water, the chemical yields of polonium forthe deposition solution adjusted to pH 0 were higher than those for the deposition solution adjusted to pH 2. This modified auto-deposition method made it possible to obtain reliable data of activity concentration of Po-210.

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A Study on Indium Gallium Oxide Thin Film Transistors prepared by a Solution-based Deposition Method (저온 용액공정을 이용한 인듐갈륨 산화물(IGO) 박막트랜지스터 제조 및 특성 연구)

  • Bae, Eunjin;Lee, Jin Young;Han, Seung-Yeol;Chang, Chih-Hung;Ryu, Si Ok
    • Korean Chemical Engineering Research
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    • v.49 no.5
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    • pp.600-604
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    • 2011
  • Solution processed IGO thin films were prepared using a general chemical solution route by spin coating. The effect of the annealing temperature of IGO thin films based on the ratio of 2:1 of indium to gallium on crystallization was investigated with varying annealing temperature from $300^{\circ}C$ to $600^{\circ}C$. The electronic device characteristic of IGO thin film was investigated. The solution-processed IGO TFTs annealed at 300 and $600^{\circ}C$ in air for 1 h exhibited good electronic performances with field effect mobilities as high as 0.34 and 3.83 $cm^2/V{\cdot}s$, respectively. The on/off ratio of the IGO TFT in this work was $10^5$ with 98% transmittance.

Effect of Preparation Condition of Precursor Thin Films on the Properties of CZTS Solar Cells

  • Seong, Si-Jun;Park, Si-Nae;Kim, Dae-Hwan;Gang, Jin-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.318.1-318.1
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    • 2013
  • Nowadays Cu2ZnSnS4 (CZTS) solar cell is attracting a lot of attention as a strong alternative to CIGS solar cell due to nontoxic and inexpensive constituent elements of CZTS. From various processes for the fabrication of CZTS solar cell, solution-based deposition of CZTS thin films is well-known non-vacuum process and many researchers are focusing on this method because of large-area deposition, high-throughput, and efficient material usage. Typically the solution-based process consists of two steps, coating of precursor solution and annealing of the precursor thin films. Unlike vacuum-based deposition, precursor solution contains unnecessary elements except Cu, Zn, Sn, and S in order to form high quality precursor thin films, and thus the precise control of precursor thin film preparation is essential for achieving high efficient CZTS solar cells. In this work, we have investigated the effect of preparation condition of CZTS precursor thin films on the performance of CZTS solar cells. The composition of CZTS precursor solution was controlled for obtaining optimized chemical composition of CZTS absorber layers for high-efficiency solar cells. Pre-annealing process of the CZTS precursor thin films was also investigated to confirm the effect of thermal treatment on chemical composition and carbon residues of CZTS absorber layers. The change of the morphology of CZTS precursor thin film by the preparation condition was also observed.

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Properties of CdS Thin Films Prepared by Chemical Bath Deposition as a Function of Thiourea/CdAc2 Ratio in Solution (CBD법으로 제작된 CdS 박막의 thiourea/CdAc2 농도비에 따른 특성)

  • Song, Woo-Chang
    • Journal of the Korean institute of surface engineering
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    • v.41 no.1
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    • pp.28-32
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    • 2008
  • In this paper CdS thin films, which were widely used window layer of the CdS/CdTe and the CdS/$CuInSe_2$ heterojunction solar cell, were grown by chemical bath deposition, which is a very attractive method for low-cost and large-area solar cells, and the structural, optical and electrical properties of the films was studied. As the thiourea/$CdAc_2$ mole ratio was increased, the deposition rate of CdS films prepared by CBD was increased due to increasing reaction velocity in solution and the optical bandgap was increased at higher thiourea/$CdAc_2$ mole ratio due to larger grain size and continuous microstructure. The minimum resistivity of the films was at thiourea/$CdAc_2$ mole ratio of 3.

Property Improvement of YBCO Thick films by EPD with Addition of PEG (PEG 첨가에 의한 YBCO 전착후막의 특성 향상)

  • 소대화;전용우
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12
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    • pp.1125-1130
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    • 2003
  • The electrophoretic deposition method using the suspension solution with additives under the electric potential was applied for the fabrication of YBCO superconductor wire. This method was able to simplify the fabrication facilities, and produce an uniform and dense thick film. To improve the critical current density of deposited films, the additive PEGs(Poly Ethylene Glycole) with the molecular weight of 600, 1000 and 3400 were used as chemical binders for the suspension solution. The organic additive (PEG) showed better effects to the properties of YBCO superconductor wire. The PEG improved the adhesion between superconductor particles and suppressed the crack on the surface, which enhanced the surface uniformity and density of YBCO deposited film. It was found that acetone suspension solution showed better deposition properties than the others. The samples fabricated in the solution with the additive, 8 vol.% of 1% PEG(1000), showed the highest critical current density measured as 2300∼2400 A/$\textrm{cm}^2$ at 77 K, 0 T.

Effects of pH on Preparation of Au-Coated $TiO_2$ Nanoparticles by Deposition-Precipitation Method

  • Nguyen, Dung The;Kim, Dong-Joo;Kim, Kyo-Seon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.05a
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    • pp.150-150
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    • 2009
  • We prepared the Au-coated $TiO_2$ (Au/$TiO_2$) nanoparticles by deposition-precipitation (DP) method with and without bases (urea or NaOH) and investigated the effects of pH on the preparation of Au/$TiO_2$ nanoparticles for various kinds of bases. For the DP method without bases, the Au nanoparticles in the diameter of about 50 nm were generated in the solution by the reduction reaction with trisodium citrate and they did not deposit on the surface of $TiO_2$. For the DP method with bases, Au precursors deposited on the surface of $TiO_2$ and then reduced to the Au nanoparticles in the diameter of 4-5 nm on the surface of $TiO_2$ by the reaction with trisodium citrate.

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