• Journal of the Korean Chemical Society
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• v.29 no.4
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• pp.382-389
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• 1985

The effect of plasma operational parameters for the determination of rare earth elements(REE) by means of inductively coupled plasma(ICP) spectrometry was investigated. While the increase in the flow rate of carrier gas argon enhanced the sensitivity and lowered the detection limit, significant ionization interferences were observed. The decrease in RF power increased the signal to background ratio. The observation point showing the lowest ionization interference was slightly higher than the position where the spatial profile of the analyte reached the maximum. The detection limits of the spectral lines commonly used for the determination of REE were measured and the spectral lines relatively free from spectral interferences were chosen.

• Korean Chemical Engineering Research
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• v.51 no.6
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• pp.755-759
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• 2013

The etch rate and etch profile of Si was investigated when Ar was added to an $SF_6$ plasma in the etch step of the Bosch process. A Si substrate was etched with the Bosch process using $SF_6$ and $SF_6$/Ar plasmas, respectively, in the etch step to analyze the effects of Ar addition on the etch characteristics of Si. When the Ar flow rate in the $SF_6$ plasma was increased, the etch rate of the Si substrate increased, had a maximum at 20% of the Ar flow rate, and then decreased. This was because the addition of Ar to the $SF_6$ plasma in the etch step of the Bosch process resulted in the bombardment of Ar ions on the Si substrate. This enhanced the chemical reactions (thus etch rates) between F radicals and Si as well as led to sputtering of Si particles. Consequently, the etch rate was higher more than 10% and the etch profile was more anisotropic when the Si substrate was etched with the Bosch process using a $SF_6$/Ar (20% of Ar flow rate) plasma during the etch step. This work revealed a feasibility to improve the etch rate and anisotropic etch profile of Si performed with the Bosch process.

• Bulletin of the Korean Chemical Society
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• v.29 no.7
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• pp.1403-1406
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• 2008

• Bulletin of the Korean Chemical Society
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• v.31 no.6
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• pp.1773-1775
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• 2010

• Archives of Pharmacal Research
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• v.21 no.5
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• pp.559-564
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• 1998

Preparation and biological activity of prodrug-type 3-methoxymethyl cephalosporins were described. From the mixtures, R- and S-prodrugs were separated and their absolute configurations were determined, and also their bioavailability was investigated.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.47-49
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• 2006

Various methods of making thin film is being used in semiconductor manufacturing process. The most common method in this field includes CVD(Chemical Vapor Deposition) and PVD(Physical Vapor Deposition). Thin film is deposited on both the backside and the frontside of wafers. The thin film deposited on the backside has poor thickness profile, and can contaminate wafers in the following processes. If wafers with the thin film remaining on the backside are immersed in batch type process tank, the thin film fall apart from the backside and contaminate the nearest wafer. Thus, it is necessary to etch the backside of the wafer selectively without etching the frontside, and chemical injection nozzle positioned under the wafer can perform the backside etching. In this study, the backside chemical injection nozzle with optimized chemical injection profile is built for single wafer tool. The evaluation of this nozzle, performed on $Si_3N_4$ layer deposited on the backside of the wafer, shows the etching rate uniformity of less than 5% at the etching rate of more than $1000{\AA}$.

• Applied Chemistry for Engineering
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• v.20 no.1
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• pp.104-108
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• 2009

In this study, for the flow of carbon dioxide/hydrogen mixture through a tubular type Pd-Ag membrane, hydrogen partial pressure, velocity profile, and concentration profile were simulated as a function of inlet flow rate using computational fluid dynamics (CFD) technique. The simulation results indicated that the mole fraction of carbon dioxide increased slowly in the longitudinal direction as the flow rate increased. In addition, the effects of inlet flow rate and the length of membrane on hydrogen recovery were investigated. At lower flow rate and for longer membrane, the hydrogen recovery was larger.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.213-213
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.

• Tribology and Lubricants
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• v.38 no.1
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• pp.1-7
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• 2022

Chemical-mechanical polishing (CMP) process is a semiconductor process that planarizes a wafer surface using mechanical friction between a polishing pad and a substrate surface during a specific chemical reaction. During the CMP process, polishing pad conditioning is applied to prevent the rapid degradation of the polishing quality caused by polishing pad glazing through repeated material removal processes. However, during the conditioning process, uneven wear on the polishing pad is inevitable because the disk on which diamond particles are electrodeposited is used. Therefore, the abrasion of the polishing pad should be considered not only for the variables during the conditioning process but also when designing the CMP conditioning system. In this study, three design variables of the conditioning system were analyzed, and the effect on the pad wear profile during conditioning was investigated. The three design variables considered in this study were the length of the conditioner arm, diameter of the conditioner disk, and distance between centers. The Taguchi method was used for the experimental design. The effect of the three design variables on pad wear and uniformity was assessed, and new variables used in conditioning system design were proposed.

• Economic and Environmental Geology
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• v.41 no.2
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• pp.183-199
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• 2008

This study is focused on characterization of the physio-chemical and mineralogical properties, investigation of their vertical changes in the tailing profile of the Guryoung mining area, classification of the profile into distinct zones, and condition conceptual model of physio-chemical conditions and phases-water relationships controlling the element behaviors in the tailings. The upper part of the groundwater is characterized by the high contents of $Fe_2O_3$ and $SO_3$ for whole rock analysis, low pH, and the occurrence of jarosite, schwertmannite and Fe-oxyhydroxide as the secondary mineral phases. The tailing profile can be divided into the covering soil, jarosite zone, Fe-sulfate zone, Fe-oxyhydroxide and gypsum-bearing pyrite zone, calcite-bearing pyrite zone, soil zone, and weathered zone on the based of the geochemical and mineralogical characteristics. The profile can be sampled into the oxidized zone and the carbonate-rich primary zone with the dramatic changes in pH and the secondary mineral phases. The conceptual model proposed for the tailing profile can be summarized that the oxidation of pyrite is the most important reaction controlling the changes in pH, the dissolution of the primary silicates and carbonates, the precipitation of secondary mineral phases, acid-neutralizing, and heavy metal behaviors through the profile.