• Applied Chemistry for Engineering
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• v.9 no.4
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• pp.536-541
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• 1998

The porous size alumina membrane was prepared by anodic oxidation with current method in an aqueous solution of oxalic acid. The aluminum metal plate was pretreated with thermal oxidation, chemical polishing and electropolishing before anodic oxidation. Membrane thickness and pore size distribution were investigated with several anodizing conditions; reaction temperature, cumulative charge, electrolyte concentration and current density. The porous alumina membrane obtained was $55{\sim}75{\mu}m$ thick with straight micropore of 45~100nm. Also, the porous alumina membrane has an uniform pore diameter and pore distribution. It was inorganic ultrafiltration membrane as a kind of the ceramic membrane.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.2
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• pp.101-107
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• 2013

Cerium compounds such as Cerium hydroxide ($Ce(OH)_3$), Cerium chloride ($CeCl_3{\cdot}nH_2O$), Cerium carbonate hydrate ($Ce_2(CO_3)_3{\cdot}8H_2O$), Cerium oxide ($CeO_2$) were synthesized using recycled Ce precursor. Cerium(IV) oxide of nanoparticles were obtained by Ultra-sonication. Cerium-sodium- sulfate compound was synthesized through acid-leaching and addition of sodium sulfate from 99 wt% purity of Ce precursor as a starting material that was recycled from the waste polishing slurry. Moreover Cerium hydroxide was obtained from Cerium-sodium-sulfate compound by adding to sodium hydroxide solution. Then Cerium chloride was synthesized by adding of hydrochloric acid to Cerium hydroxide. Needle-shaped Cerium carbonate hydrate was synthesized in the continuous process and Cerium(IV) oxide with 30~40 nm size was subsequently obtained by the calcinations and dispersion.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.112-117
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• 2006

In this paper we present that the effects of polymer adsorption on stabilities and CMP performance of ceria abrasive particles. Characterization of ceria abrasive particles in the presence of poly(vinyl pyrrolidone) (PVP) was performed by the measurements of adsorbed amounts of PVP, average sizes, and the back scattering intensities of the ceria abrasive particles as functions of PVP molecular weight and PVP concentration. The ceria abrasive particles in the presence of PVP were used to polish $SiO_2\;and\;Si_3N_4$ films deposited on Si wafers in order to understand the effect of PVP adsorption on chemical mechanical polishing (CMP) performance, together with ceria abrasive particles without PVP. Adsorption of PVP on the ceria abrasive particles enhanced the stability of ceria abrasive particles due to steric stabilization of the thick adsorbed layer of PVP. Removal rates of the deposited $SiO_2\;and\;Si_3N_4$ films by the ceria abrasive particles in the presence of PVP were much lower than those in the absence of PVP and their magnitudes were decreased with an increase in the concentration of free PVP chains in the dispersion media. This suggests that the CMP performance in the presence of PVP could be mainly controlled by the hydrodynamic interactions between the adsorbed PVP chains and the free ones. Moreover, the molecular weight dependence of PVP on the removal rates of the deposited films was hardly observed. On the other hand, high removal rate selectivity between the deposited films in the presence of PVP was not observed.

• The Journal of Advanced Prosthodontics
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• v.7 no.2
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• pp.151-159
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• 2015

PURPOSE. To describe and characterize the surface topography and cleanliness of CAD/CAM manufactured zirconia abutments after steaming and ultrasonic cleaning. MATERIALS AND METHODS. A total of 12 ceramic CAD/CAM implant abutments of various manufacturers were produced and randomly divided into two groups of six samples each (control and test group). Four two-piece hybrid abutments and two one-piece abutments made of zirconium-dioxide were assessed per each group. In the control group, cleaning by steam was performed. The test group underwent an ultrasonic cleaning procedure with acetone, ethyl alcohol and antibacterial solution. Groups were subjected to scanning electron microscope (SEM) analysis and Energy-dispersive X-ray spectroscopy (EDX) to verify and characterize contaminant chemical characterization non- quantitatively. RESULTS. All zirconia CAD/CAM abutments in the present study displayed production-induced wear particles, debris as well as organic and inorganic contaminants. The abutments of the test group showed reduction of surface contamination after undergoing an ultrasonic cleaning procedure. However, an absolute removal of pollutants could not be achieved. CONCLUSION. The presence of debris on the transmucosal surface of CAD/CAM zirconia abutments of various manufacturers was confirmed. Within the limits of the study design, the results suggest that a defined ultrasonic cleaning process can be advantageously employed to reduce such debris, thus, supposedly enhancing soft tissue healing. Although the adverse long-term influence of abutment contamination on the biological stability of peri-implant tissues has been evidenced, a standardized and validated polishing and cleaning protocol still has to be implemented.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.3
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• pp.289-294
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• 2012

There are several indicators to represent characteristics of chemical mechanical planarization (CMP) such as material removal rate (MRR), surface quality and removal uniformity on a wafer surface. Especially, the removal uniformity on the wafer edge is one of the most important issues since it gives a significant impact on the yield of chip production on a wafer. Non-uniform removal rate at the wafer edge (edge effect) is mainly induced by a non-uniform pressure from nonuniform pad curvature during CMP process, resulting in edge exclusion which means the region that cannot be made to a chip. For this reason, authors tried to minimize the edge exclusion by using an edge profile control (EPC) ring. The EPC ring is equipped on the polishing head with the wafer to protect a wafer from the edge effect. Experimental results showed that the EPC ring could dramatically minimize the edge exclusion of the wafer. This study shows a possibility to improve the yield of chip production without special design changes of the CMP equipment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.523-524
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• 2007

This paper discusses the planarization process of thick copper film structure used for power supply device. Chemical mechanical polishing(CMP) has been used to remove a metal film and obtain a surface planarization which is essential for the semiconductor devices. For the thick metal removal, however, the long process time and other problems such as dishing, delamination and metal layer peeling are being issued, Compared to the traditional CMP process, Electro-chemical mechanical planarization(ECMP) is suggested to solve these problems. The two-step process composed of the ECMP and the conventional CMP is used for this experiment. The first step is the removal of several tens ${\mu}m$ of bulk copper on patterned wafer with ECMP process. The second step is the removal of residual copper layer aimed at a surface planarization. For more objective comparison, the traditional CMP was also performed. As an experimental result, total process time and process defects are extremely reduced by the two-step process.

• Journal of the Semiconductor & Display Technology
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• v.22 no.2
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• pp.30-34
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• 2023

Since dishing in the CMP process is a major factor that hinders the uniformity of the semiconductor thin film, many studies have focused this issue to improve the non-uniformity of the film due to dishing. In the metal layer, the dishing mainly occurs in the central part of the metal due to a difference in a selection ratio between the metal and the dielectric, thereby generating a step on the surface of the metal layer. Factors that cause dishing include the shape of the thin film, the chemical reaction of the slurry, thermal deformation, and the rotational speed of the pad and head, and dishing occurs due to complex interactions between them. This study analyzed the stress generated on the metal layer surface in the CMP process using ANSYS software, a commercial structure analysis program. The stress caused by the vertical load applied from the pad was analyzed by changing the area density and line width of the dummy metal. As a result of the analysis, the stress in the active region decreased as the pattern density and line width of the dummy metal increased, and it was verified that it was valid compared with the previous study that studied the dishing according to the dummy pattern density and line width of the metal layer. In conclusion, it was confirmed that there is a relationship between dishing and normal stress.

• Korean Chemical Engineering Research
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• v.50 no.3
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• pp.567-573
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• 2012

Compared with the natural marble, the artificial marble has the advantages of excellent appearance, high degree of finish, even color, fine pressure and wear resistance, bear erosion and weathering, etc. It can be widely used in kitchen countertops, bath vanity tops, table tops, furniture, reception desks, etc. However, large amounts of artificial marble waste such as scraps or dust have been generated from sawing and polishing processes in artificial marble industry. Waste from artificial marble industry is increasing according to demand magnification of luxurious interior material. Artificial marble wastes can be recycled as aluminum oxide used as raw materials in electronic materials, ceramics production, etc., and methyl methacrylate(MMA) which become a raw material of artificial marble by pulverization, pyrolysis and distillation processes. The characteristics of artificial marble wastes was analyzed by using TGA/DSC and element analysis. Crude aluminum oxide was obtained from artificial marble waste by pulverization and thermal decomposition under nitrogen atmosphere. In this work, Box-Behnken design was used to optimize the pyrolysis process. The characteristics of crude aluminum oxide was evaluated by chromaticity analysis, element analysis, and surface area.

• Korean Chemical Engineering Research
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• v.51 no.5
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• pp.622-627
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• 2013

Colloidal silica is used in various industrial products such as chemical mechanical polishing slurry for planarization of silicon and sapphire wafer, organic-inorganic hybrid coatings, binder of investment casting, etc. An accurate determination of particle size and dispersion stability of silica sol is demanded because it has a strong influence on surface of wafer, film of coatings or bulks having mechanical, chemical and optical properties. The study herein is discussed on the effect of measurement results of average particle size, sol viscosity and electrophoretic mobility of particle according to the volume fraction of eight types of silica sol with different size and surface properties of silica particles which are presented by the manufacturer. The measured particle size and the mobility of these sol were changed by volume fraction or particle size due to highly active surface of silica particle and change of concentration of counter ion by dilution of silica sol. While in case the measured sizes of small particles less than 60 nm are increased with increasing volume fraction, the measured sizes of larger particles than 60 nm are slightly decreased. The mobility of small particle such as 12 nm are decreased with increase of viscosity. However, the mobility of 100 nm particles under 0.048 volume fraction are increased with increasing volume fraction and then decreased over higher volume fraction.

• Journal of Soil and Groundwater Environment
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• v.19 no.3
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• pp.25-32
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• 2014

The amount of TPH contaminated soil treated at off-site remediation facilities is ever increasing. For the recycle of the treated-soil on farmlands, it is necessary to restore biological and physico-chemical soil characteristics and to remove residual TPH in the soil by an economic polishing treatment method such as phytoremediation. In this study, a series of experiments was performed to select suitable plant species and to devise a proper planting method for the phyto-restoration of TPH-treated soil. Rye (Secale cereale) was selected as test species through a germination test, among 5 other plants. Five 7-day-old rye seedlings were planted in a plastic pot, 20 cm in height and 15 cm in diameter. The pot was filled with TPH-treated soil (residual TPH of 1,118 mg/kg) up to 15 cm, and upper 5 cm was filled with horticulture soil to prevent TPH toxic effects and to act as root growth zone. The planted pot was cultivated in a greenhouse for 38 days along with the control that rye planted in a normal soil and the blank with no plants. After 38 days, the above-ground biomass of rye in the TPH-treated soil was 30.6% less than that in the control, however, the photosynthetic activity of the leaf remained equal on both treatments. Soil DHA (dehydrogenase activity) increased 186 times in the rye treatment compared to 10.8 times in the blank. The gross TPH removal (%) in the planted soil and the blank soil was 34.5% and 18.4%, respectively, resulting in 16.1% increase of net TPH removal. Promotion of microbial activity by root exudate, increase in soil permeability and air ventilation as well as direct uptake and degradation by planted rye may have contributed to the higher TPH removal rate. Therefore, planting rye on the TPH-treated soil with the root growth zone method showed both the potential of restoring biological soil properties and the possibility of residual TPH removal that may allow the recycle of the treated soil to farmlands.