• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.972-975
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• 2002

An understanding of tribological behavior in CMP(Chemical Mechanical Polishing) is one of the most important things to reveal the mechanism of material removal. In CMP, the contact type is thought to be semi-direct, elastohydrodynamic contact type from the Stribeck diagram, which is a combination of solid-solid direct contact and hydrodynamic lubrication with thin liquid film. This study is focused on the decay of friction force during CMP from two points of view, one of which is change of the real contact area and the other is the decrease of the elastic modulus of the pad caused by the increase of the temperature during CMP Experiments are implemented with elastic modulus measuring system and tool dynamometer. Results show that the decay of friction force during CMP results from the decrease of the real contact pressure working on an abrasive, which is induced by the decrease of elastic modulus of pad caused by the increase of temperature. And, the phenomenon is thought to be happen specially in the case that the weight concentration of abrasive in slurry is small enough.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.61-61
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• 2003

CMP(Chemical Mechanical Polishing)는 VLSI의 제조공정에서 실리콘웨이퍼의 절연막내에 있는 토포그래피를 제어할 수 있는 광역 평탄화 기술이다. 또한 최근에는 실리콘웨이퍼의 나노토포그래피(Nanotopography)가 STI의 CMP 공정에서 연마 후 필름의 막 두께 변화에 많은 영향을 미치게 됨으로 중요한 요인으로 대두되고 있다. STI CMP에 사용되는 CeO$_2$ 슬러리에서 첨가되는 계면활성제의 농도에 따라서 나노토포그래피에 미치는 영향을 제어하는 것이 필수적 과제로 등장하고 있다. 본 연구에서는 STI CMP 공정에서 사용되는 CeO$_2$ 슬러리에서 계면활성제의 농도에 따른 나노토포그래피의 의존성에 대해서 연구하였다. 실험은 8 "단면연마 실리콘웨이퍼로 PETEOS 7000$\AA$이 증착 된 것을 사용하였으며, 연마 시간에 따른 나노토포그래피 의존성을 알아보기 위해 연마 깊이는 3000$\AA$으로 일정하게 맞췄다. 그리고 CMP 공정은 Strasbaugh 6EC를 사용하였으며, 패드는 IC1000/SUBA4(Rodel)이다. 그리고 연마시 적용된 압력은 4psi(Pounds per Square Inch), 헤드와 정반(table)의 회전속도는 각각 70rpm이다 슬러리는 A, B 모두 CeO$_2$ 슬러리로 입자크기가 다른 것을 사용하였고, 농도를 달리한 계면활성제가 첨가되었다. CMP 전 후 웨이퍼의 막 두께 측정은 Nanospec 180(Nanometrics)과 spectroscopic ellipsometer (MOSS-ES4G, SOPRA)가 사용되었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.63-63
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• 2003

The nanotopography of silicon wafers has emerged as an important factor in the STI process since it affects the post-CMP thickness deviation (OTD) of dielectric films. Ceria slurry with surfactant is widely applied to STI-CMP as it offers high oxide-to-nitride removal selectivity. Aiming to control the nanotopography impact through ceria slurry characteristics, we examhed the effect of surfactant concentration and abrasive size on the nanotopography impact. The ceria slurries for this study were produced with cerium carbonate as the starting material. Four kinds of slurry with different size of abrasives were prepared through a mechanical treatment The averaged abrasive size for each slurry varied from 70 nm to 290 nm. An anionic organic surfactant was added with the concentration from 0 to 0.8 wt %. We prepared commercial 8 inch silicon wafers. Oxide Shu were deposited using the plasma-enhanced tetra-ethyl-ortho-silicate (PETEOS) method, The films on wafers were polished on a Strasbaugh 6EC. Film thickness before and after CMP was measured with a spectroscopic ellipsometer, ES4G (SOPRA). The nanotopogrphy height of the wafer was measured with an optical interferometer, NanoMapper (ADE Phase Shift)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.380-381
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry (MAS). In order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• Tribology and Lubricants
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• v.25 no.6
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• pp.404-408
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• 2009

In this paper, the relationship between the material removal rate and the interfacial mechanical properties at particle-surface contact situation, which can be seen in an abrasive machining process using micro/nano-sized particles, was discussed. Friction and stiffnesses were measured experimentally on an atomic force microscope (AFM) by using colloidal probes which have a silica colloid particle in place of tip to simulate a particle-flat surface contact in an abrasive machining process. From the experimental investigation and theoretical contact analysis, the interfacial contact properties such as lateral stiffness of contact, friction, the material removal rate were presented with respect to some of material surfaces and the relationship between the properties as well.

• Korean Journal of Optics and Photonics
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• v.10 no.5
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• pp.373-378
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• 1999

White light scanning interferometry is increasingly used for precision profile metrology of engineering surfaces, but its current application is primarily limited to opaque surfaces with relatively simple optical reflection behaviors. In this paper, a new attempt is made to extend the interferometric method to the thickness profile measurement of transparent thin film layers. An extensive frequency domain analysis of multiple reflection is performed to allow both the top and bottom interfaces of a thin film layer to be measured independently at the same time using nonlinear least squares technique. This rigorous approach provides not only point-by-point thickness probing but also complete volumetric film profiles digitized in three dimensions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.162-162
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• 2008

세리아는 고체 산화물 연료전지(SOFC, solid oxide fuel cell)의 전해질 재료와CMP( chemical mechanical polishing) 슬러리 재료, 자동차의 3원 촉매, gas sensor, UV absorbent등 여러 분야에서 사용되고 있다. 본 연구에서는 세리아의 입자의 크기와 형상을 조절하여 성능 및 물성을 향상시켜 보다 넓은 분야의 활용을 하고자 실험을 실시하였다. 세리아 합성에 사용되는 전구체인 cerium carbonate의 특성이 세리아 분말의 물리화학적 특성에 직접적인 영향을 주기 때문에 전구체의 합성 단계에서 형상과 크기를 조절하고자 하였다. 세륨염으로 cerium nitrate hexahydrate, 균일침전반응을 할 수 있는 urea를 침전제로 사용하였다. 반응 용매의 유전상수를 조절하고 반응의 과포화도 변화를 이용하기 위하여 에탄올을 첨가하여 입자의 크기 및 형상을 조절, cubic형태의 $Ce_2O(CO_3)_2{\cdot}H_2O$ 결정상을 가지는 세리아 전구체를 합성하였다. 이렇게 생성된 전구체를 $1000^{\circ}C$에서 2시간동안 하소하여 세리아를 합성하고 반응시간, 농도, 에탄올의 함량 변화에 대해 XRD, FE-SEM, particle size analyzer, micropore physisorption analyzer 분석을 통하여 입자의 결정상과 형상, 입도 분포 및 기공분포 등을 반응인자의 변화에 따라 비교 및 해석하였다.

• Design & Manufacturing
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• v.14 no.1
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• pp.56-62
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• 2020

An electron beam was used to mainly utilize for polishing, finishing, welding, a lithography process, etc. Due to the high technical level of difficulty of high-power density electron beam, it is difficult to secure related technologies. In this study, research was carried out to improve the machinability by developing the vaporized amplification sheets to realize the electron beam drilling technology. Their vaporized amplification sheets were analyzed by using the measurement of chemical and composition, which is such as TGA, SEM. We analyzed micro-hole processing using a microscope. Also, the thermal characteristics of vaporized amplification sheets are highly significant for applying to high-power density electron beam technique. So, we finished the vaporized amplification sheets according to the process conditions and analyzed it according to the machining conditions of the electron beam. It was confirmed that the effect on the experimental results differs depending on the influence of the metal powder contained in the developed material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.234-239
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• 2007

This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.171-175
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics and metal, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter level dielectrics and metal. Especially, defects like (micro-scratch) lead to severe circuit failure, and affects yield. Current conditioning method - bladder type, orbital pad motion- usually provides unsuitable pad profile during ex-situ conditioning near the end of pad life. Since much of the pad wear occurs by the mechanism of bladder type conditioning and its orbital motion without rotation, we need to implement new ex-situ conditioner which can prevent abnormal regional force on pad caused by bladder-type and also need to rotate the pad during conditioning. Another important study of ADPC is related to the orbital scratch of which source is assumed as diamond grit dropped from the strip during ex-situ conditioning. Scratch from diamond grit damaged wafer severely so usually scraped. Figure 1 shows the typical shape of scratch damaged from diamond. e suspected that intensive forces to the edge area of bladder type stripper accelerated the drop of Diamond grit during conditioning. so new designed Flat stripper was introduced.