• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.95-96
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• 2006

ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) process is one of the suitable solutions which could solve the problems.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.3
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• pp.128-132
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• 2004

The perovskite ferroelectric materials of the PZT, SBT and BST series will attract much attention for application to ULSI devices. Among these materials, the BST ($Ba_0.6$$Sr_0.4$/$TiO_3$) is widely considered the most promising for use as an insulator in the capacitors of DRAMS beyond 1 Gbit and high density FRAMS. Especially, BST thin films have a good thermal-chemical stability, insulating effect and variety of Phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the surface characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.140-143
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• 2003

BST thin films have a good thermal-chemical stability, insulating effect and variety of phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1600-1604
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.297-302
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• 2005

Chemical mechanical polishing(CMP) performances can be optimized by several process parameters such as equipment and consumables (pad, backing film and slurry). Pad properties are important in determining removal rate and planarization ability of a CMP process. It is investigated the performance of oxide CMP process using commercial silica slurry after the pad conditioning temperature was varied. Conditioning process with the high temperature made the slurry be unrestricted to flow and be hold, which made the removal rate of oxide film increase. The pad became softer and flexible as the conditioning temperature increases. Then the softer pad provided the better surface planarity of oxide film without defect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.711-714
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• 2004

Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. However, it still has various problems to the CMP equipment, in particular, among the CMP components, process variables are very important parameters in determining the removal rate and non-uniformity. Using a design of experiment (DOE) approach, this study was performed investigating the interaction between the various parameters such as turntable and head speed, down force and back pressure during CMP. Using statistical analysis techniques, a better understanding of the interaction behavior between the various parameters and the effect on removal rate, no-uniformity and ETC (edge to center) is achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.93-96
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.313-316
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• 2004

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics(ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.389-392
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and non-uniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between particle size and CMP with particle size analysis of used slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.184-187
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) lyaer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2-CMP$ process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis or used slurry.