• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.278-278
• /
• 2011

수소 중성입자빔을 이용한 silicon etching은 기존의 silicon etching 공정 가스(Fluorine이나 Chlorine 계열의 가스) 사용 시 배출되는 유해 가스로 인한 지구 온난화 방지 및 폐기물 처리에 추가적인 비용이 발생하지 않는 친환경 etching 공정이다. 본 연구에 사용된 수소 중성입자빔을 발생시키기 위한 플라즈마 소스는 낮은 압력에서 높은 플라즈마 밀도를 발생시킬 수 있는 ECR 플라즈마 소스를 사용하였으며 중성입자빔의 에너지를 조절할 수 있는 중성화판과 플라즈마로부터의 전하손상을 방지할 수 있어 charge free 공정을 가능하게 하는 Limiter로 구성되어 있다. 본 연구에서는 플라즈마 밀도, 공정 압력 그리고, 중성입자빔의 에너지를 조절하여 수소 중성입자빔을 이용한 poly-crystal silicon과 a-Si:H 간의 etch rate와 etching selectivity를 관찰하였다.

• Current Photovoltaic Research
• /
• 제5권4호
• /
• pp.122-134
• /
• 2017

As a promising solution to global warming and growing energy demand, photocatalytic $CO_2$ conversion to useful fuels is widely studied to enhance the activity and selectivity of the $CO_2$ photoreduction reactions. In this review, an overview of fundamental aspects of the $CO_2$ reduction photocatalysts is provided. The recent development of the photocatalyst is also discussed, focusing on the mechanisms of light harvesting and charge transfer. Besides, this review sets its sight on inspiring new ideas toward a practical $CO_2$ conversion technology.

• 한국세라믹학회지
• /
• 제55권1호
• /
• pp.1-20
• /
• 2018

Semiconducting nanomaterials have attracted considerable interest in recent years due to their high sensitivity, selectivity, and fast response time. In addition, for portable applications, they have low power consumption, lightweight, simple in operation, a low maintenance cost. Furthermore, it is easy to manufacture microelectronic sensor structures with metallic oxide sensitive thin layers. The use of semiconducting metal oxides to develop highly sensitive chemiresistive sensing systems remains an important scientific challenge in the field of gas sensing. According to the sensing mechanisms of gas sensors, the overall sensor conductance is determined by surface reactions and the charge transfer processes between the adsorbed species and the sensing material. The primary goal of the present study is to explore the possibility of using semiconducting mixed metal oxide nanostructure as a potential sensor material for selective gases.

• KIEE International Transactions on Electrophysics and Applications
• /
• 제11C권3호
• /
• pp.63-69
• /
• 2001

Holographic transmission gratings were performed by an Ar-laser( ${\lambda}$=514nm) intensity, the ratio fo LC contents to the surfactant. The addition of the surfactant to the LC and pre-polymer systems causes the droplet to maintain the ideal size at the high fraction(over 40wt%) of the LC contents that induce the films to be fabricated with high diffraction efficiency than that of no surfactant series. The image of these films was examined using a charge coupled device (CCD). We also studied the angular selectivity plots which support the important role in the multiplexer channel (MUX). Eventually, we showed the reconstructive optical image recorded in this transmission mode of HPDLCs.

• Bulletin of the Korean Chemical Society
• /
• 제18권4호
• /
• pp.395-401
• /
• 1997

The substituent effects in the gas-phase rearrangement of carbenes to ketenes involved in the Wolff reaction have been investigated theoretically using the AM1 method. In the initial state, carbene, there is a relatively strong vicinal n-σ* interaction between the lone pair (n) and carbonyl group (σ*). In the bridged transition state (TS), electronic charge is transferred from the migrating ring (Z-ring) toward the nonmigrating ring (Y-ring). The carbenes are stabilized by an electron donor Y (δσY < 0) whereas the TS is stabilized by an electron acceptor Y (δσY > 0). Multiple regression analysis of log (kYZ/kHH)(=-δΔG≠/2.3RT) leads to a relatively large negative cross-interaction constant, ρYZ=-0.53, log (kYZ/kHH)=2.96 σY--1.40 σZ-0.53 σY-σZ reflecting an extensive structural change in the transition state due to the stabilization of the initial state by the vicinal n-σ* overlap. When the solvent (water) effects are accounted for by the SM2.1 model of the Cramer and Truhlar method, the magnitude of all the selectivity parameters, ρY-, ρZ and ρYZ (=-0.66) are increased.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.472-472
• /
• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.287-287
• /
• 2011

ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.

• 대한화학회지
• /
• 제37권1호
• /
• pp.3-9
• /
• 1993

메탄올 및 에탄올 수용액내에서 1-adamantyl fluoroformate의 가용매분해반응속도를 여러 압력하에서 전도도방법을 이용하여 측정하였다. 이들 속도상수로부터 활성화부피(${\Delta}V^{\neq}{_o}$), 활성화압축율계수(${\Delta}{\beta}^{\neq}$), 활성화엔탈피(${Delta}H^{\neq}$), 활성화엔트로피(${Delta}S^{\neq}$), 그리고 활성화 착물에서의 charge development(△P)를 구하였다. 또한 에탄올 수용액내에서 가용매분해반응으로 인한 생성물에 대한 selectivity를 GC를 이용하여 측정하였다. 그 결과 ${\Delta}V^{\neq}{_o}$와 ${\Delta}{\beta}^{\neq}$의 값은 모두 음의 값을 ${Delta}H^{\neq}$는 양의 값을 ${Delta}S^{\neq}$은 큰 음의 값을 얻었다. 이 현상을 용매구조변화에 대하여 논의하였다. 이들 결과로부터 본 반응은 acyl carbon을 공격하는 이분자성반응과 가용매분해과정(S-D)인 용매-분리이온쌍반응으로 추정할 수가 있었다.

• Bulletin of the Korean Chemical Society
• /
• 제31권2호
• /
• pp.453-456
• /
• 2010

The structural and energetic preferences of thiacalix[4]biscrown-5 with and without alkali metal ions ($Na^+$, $K^+$, $Rb^+$, and $Cs^+$) have been theoretically investigated for the first time using molecular dynamic (MD) simulations and density functional theory (MPWB1K/6-31G(d)//B3LYP/6-31G(d)) methods. The formation of the metal ion complex by the host is mainly driven by the electrostatic attraction between crown-5 oxygens and a cation together with the minor contribution of the cation-$\pi$ interaction between two facing phenyl rings around the cation. The computed binding energies and the atomic charge distribution analysis for the metal binding complexes indicate the selectivity toward a potassium ion. The theoretical results herein explain the experimentally observed extractability order by this host towards various alkali metal ions. The physical nature and the driving forces for cation recognition by this host are discussed in detail.

• Biomolecules & Therapeutics
• /
• 제25권5호
• /
• pp.471-481
• /
• 2017

The canonical transient receptor potential channels (TRPCs) constitute a series of nonselective cation channels with variable degrees of $Ca^{2+}$ selectivity. TRPCs consist of seven mammalian members, TRPC1, TRPC2, TRPC3, TRPC4, TRPC5, TRPC6, and TRPC7, which are further divided into four subtypes, TRPC1, TRPC2, TRPC4/5, and TRPC3/6/7. These channels take charge of various essential cell functions such as contraction, relaxation, proliferation, and dysfunction. This review, organized into seven main sections, will provide an overview of current knowledge about the underlying pathogenesis of TRPCs in cardio/cerebro-vascular diseases, including hypertension, pulmonary arterial hypertension, cardiac hypertrophy, atherosclerosis, arrhythmia, and cerebrovascular ischemia reperfusion injury. Collectively, TRPCs could become a group of drug targets with important physiological functions for the therapy of human cardio/cerebro-vascular diseases.