• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.389-395
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• 2005

The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.

• Journal of Electrical Engineering and Technology
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• v.1 no.3
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• pp.396-405
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• 2006

The visual analysis of buried channel (Be) devices such as buried channel MOSFETs and CCDs (Charge Coupled Devices) is investigated to give better understanding and insight for their electrical behaviours using a 3-dimensional (3-D) numerical simulation. This paper clearly demonstrates the capability of the numerical simulation of 'EVEREST' for characterising the analysis of a depletion mode MOSFET and BC CCD, which is a simulation software package of the semiconductor device. The inverse threshold and punch-through voltages obtained from the simulations showed an excellent agreement with those from the measurement involving errors of within approximately 1.8% and 6%, respectively, leading to the channel implanted doping profile of only approximately $4{\sim}5%$ error. For simulation of a buried channel CCD an advanced adaptive discretising technique was used to provide more accurate analysis for the potential barrier height between two channels and depletion depth of a deep depletion CCD, thereby reducing the CPU running time and computer storage requirements. The simulated result for the depletion depth also showed good agreement with the measurement. Thus, the results obtained from this simulation can be employed as the input data of a circuit simulator.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.2
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• pp.175-181
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• 2015

In this study, a lithium polymer battery (LiPB) is simply expressed by a primary RC equivalent model. The PI state observer is designed in Matlab/Simulink. The non-linear relationship with the OCV-SOC is represented to be linearized with 0.1 pu intervals by using battery parameters obtained by constant-current pulse discharge. A state equation is configured based on battery parameters. The state equation, which applied Peukert's law, can estimate SOC more accurately. SOC estimation capability was analyzed by utilizing reduced Federal Test Procedure (FTP-72) current profile and using a bi-directional DC-DC converter at temperature ($25^{\circ}C$). The PI state observer, which is designed in this study, indicated a SOC estimation error rate of ${\pm}2%$ in any of the initial SOC states. The PI state observer confirms a strong SOC estimation performance despite disturbances, such as modeling errors and noise.

• Journal of the Korean Electrochemical Society
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• v.15 no.3
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• pp.149-153
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• 2012

The $Cu_2O/TiO_2$ inverse opal heterojunction arrays were developed by electrochemical deposition of $Cu_2O$ nanoparticles on $TiO_2$ inverse opal arrays. The $Cu_2O$ nanoparticles completely filled the inner pores of $TiO_2$ inverse opal film (prepared by liquid phase deposition with an average thickness of 400 nm) and covered the entire area; exhibiting high crystalline properties of anatase and cubic phase from $TiO_2$ and $Cu_2O$, respectively. From asymmetric current-voltage profile, it was noticeable that a heterojunction was well formed for charge transport from $Cu_2O$ to $TiO_2$ film resulting from the enhanced charge separation yield. In addition, increased photocurrent of 0.19 $mA/cm^2$ (versus 0.08 $mA/cm^2$ under dark condition) was obtained at -0.35 V from the heterojunction structure in the 0.5M $Na_2SO_4$ solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.83-83
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• 2008

Metal-oxide-silicon-on-insulator (MOSOI) structures were fabricated to study the effect caused by reactive ion etching (RIE) and sacrificial oxidation process on silicon-on-insulator (SOI) layer. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measured C-V curves were compared to the numerical results from 2-dimensional (2-D) simulations. The measurements revealed that the profile of C-V curves significantly changes depending on the SOI surface condition of the MOSOI capacitors. The shift in the measured C-V curves, due to the difference of the fixed oxide charge ($Q_f$), together with the numerical simulation analysis and atomic force microscopy (AFM) analysis, allowed extracting the fixed oxide charges ($Q_f$) in the structures as well as 2-D carrier distribution profiles.

• Journal of Power Electronics
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• v.13 no.4
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• pp.569-583
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• 2013

In this study, the simultaneous use of a multi-level converter (MLC) as a DC-motor drive and as an active battery cell balancer is investigated. MLCs allow each battery cell in a battery pack to be independently switched on and off, thereby enabling the potential non-uniform use of battery cells. By exploiting this property and the brake regeneration phases in the drive cycle, MLCs can balance both the state of charge (SoC) and temperature differences between cells, which are two known causes of battery wear, even without reciprocating the coolant flow inside the pack. The optimal control policy (OP) that considers both battery pack temperature and SoC dynamics is studied in detail based on the assumption that information on the state of each cell, the schedule of reciprocating air flow and the future driving profile are perfectly known. Results show that OP provides significant reductions in temperature and in SoC deviations compared with the uniform use of all cells even with uni-directional coolant flow. Thus, reciprocating coolant flow is a redundant function for a MLC-based cell balancer. A specific contribution of this paper is the derivation of a state-space electro-thermal model of a battery submodule for both uni-directional and reciprocating coolant flows under the switching action of MLC, resulting in OP being derived by the solution of a convex optimization problem.

• Journal of Power Electronics
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• v.10 no.6
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• pp.769-776
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• 2010

The ultracapacitor module has recently been recast for use in hybrid energy storage systems (HESSs). As a result, accurate state-of-charge (SOC) estimation for an ultracapacitor module is as important as that of primary sources in order to be utilized efficiently in an energy storage system (ESS). However, while SOC estimation via the open-circuit voltage (OCV) method is generally used due to its linear characteristics compared with other ESSs, this method results in many errors in cases of highcurrent charging/discharging within a short time period. Accordingly, this paper introduces a dynamic SOC estimation algorithm that is capable of SOC compensation of an ultracapacitor module even when there is a current input and output. A cycle profile that simulates the operating conditions of a mild-HEV was applied to a vehicle simulator to verify the effectiveness of the proposed algorithm.

• Journal of ILASS-Korea
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• v.27 no.3
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• pp.155-160
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• 2022

Recently, major developed countries have strengthened automobile fuel efficiency regulations and carbon dioxide emission allowance standards to curb climate change caused by global warming worldwide. Accordingly, research and manufacturing on electric vehicles that do not emit pollutants during actual driving on the road are being conducted. Several automobile companies are producing and testing electric vehicles to commercialize them, but it takes a lot of manpower and time to test and evaluate mass-produced electric vehicles with driving mileage of more than 300km on a per-charge. Therefore, in order to reduce this, a simulation model was developed in this study. This study used vehicle information and MCT speed profile of small electric vehicle as basic data. It was developed by applying Simulink, which models the system in a block diagram method using MATLAB software. Based on the vehicle dynamics, the simulation model consisted of major components of electric vehicles such as motor, battery, wheel/tire, brake, and acceleration. Through the development model, the amount of change in battery SOC and the mileage during driving were calculated. For verification, battery SOC data and vehicle speed data were compared and analyzed using CAN communication during the chassis dynamometer test. In addition, the reliability of the simulation model was confirmed through an analysis of the correlation between the result data and the data acquired through CAN communication.

• Journal of Multimedia Information System
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• v.4 no.4
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• pp.179-188
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• 2017

The Internet Video Coding (IVC) standard is due to be published by Moving Picture Experts Group (MPEG) for various Internet applications such as internet broadcast streaming. IVC aims at three things fundamentally: 1) forming IVC patents under a free of charge license, 2) reaching comparable compression performance to AVC/H.264 constrained Baseline Profile (cBP), and 3) maintaining computational complexity for feasible implementation of real-time encoding and decoding. MPEG experts have worked diligently on the intellectual property rights issues for IVC, and they reported that IVC already achieved the second goal (compression performance) and even showed comparable performance to even AVC/H.264 High Profile (HP). For the complexity issue, however, there has not been thorough analysis on IVC decoder. In this paper, we analyze the IVC decoder in view of the time complexity by evaluating running time. Through the experimental results, IVC is 3.6 times and 3.1 times more complex than AVC/H.264 cBP under constrained set (CS) 1 and CS2, respectively. Compared to AVC/H.264 HP, IVC is 2.8 times and 2.9 times slower in decoding time under CS1 and CS2, respectively. The most critical tool to be improved for lightweight IVC decoder is motion compensation process containing a resolution-adaptive interpolation filtering process.

• Journal of Astronomy and Space Sciences
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• v.30 no.2
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• pp.91-94
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• 2013

We use the outer gap model to explain the spectrum and the energy dependent light curves of the X-ray and soft ${\gamma}$-ray radiations of the spin-down powered pulsar PSR B1509-58. In the outer gap model, most pairs inside the gap are created around the null charge surface and the gap's electric field separates the opposite charges to move in opposite directions. Consequently, the region from the null charge surface to the light cylinder is dominated by the outflow current and that from the null charge surface to the star is dominated by the inflow current. We suggest that the viewing angle of PSR B1509-58 only receives the inflow radiation. The incoming curvature photons are converted to pairs by the strong magnetic field of the star. The X-rays and soft ${\gamma}$-rays of PSR B1509-58 result from the synchrotron radiation of these pairs. The magnetic pair creation requires a large pitch angle, which makes the pulse profile of the synchrotron radiation distinct from that of the curvature radiation. We carefully trace the pulse profiles of the synchrotron radiation with different pitch angles. We find that the differences between the light curves of different energy bands are due to the different pitch angles of the secondary pairs, and the second peak appearing at E > 10 MeV comes from the region near the star, where the stronger magnetic field allows the pair creation to happen with a smaller pitch angle.