• Title/Summary/Keyword: Charge Amplifier

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Making of Smart Structures by means of Piezoceramics and its performance tests (압전세라믹을 이용한 지능구조물의 제작 및 성능실험)

  • Heo, Seok;Kwak, Moon-Kyu
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2000.06a
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    • pp.1321-1326
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    • 2000
  • This paper is concerned with the making of smart structrures by means of piezoceramic wafers and its performance tests. It is also concerned with the implementation of the PPF controller by using the quad operational amplifier, which includes the charge and bridge amplifiers. The problems regarding the implementation of the piezoceramic sensors and actuators are discussed. The experimental process for smart structures is explained in detail. The technology demonstration which can show the effectiveness of smart structure technology is built up. Experimental results will follow.

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Simulation of the Amplification Characteristics of the Compton Free Electron Laser Amplifier (컴프턴 자유전자 레이저 증폭기의 증폭특성에 관한 시뮬레이션)

  • Cho, Choeng-Rae;Kang, Hyung-Boo
    • Proceedings of the KIEE Conference
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    • 1997.07e
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    • pp.1861-1863
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    • 1997
  • The free electron laser(FEL) with the tapered wiggler in the Compton regime where the space charge effect is negligible was simulated on the basis of one dimensional model. Bunching process and the trajectories of 480 particles, which were loaded randomly in the phase space, were tracked as they traversed the wiggler, and the power and the efficiency of the FEL were estimated.

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Development of Fully Integrated Broadband MMIC Chip Set Employing CSP(Chip Size Package) for K/Ka Band Applications (CSP(Chip Size Package)를 이용한 완전집적화 K/Ka 밴드 광대역 MMIC Chip Set 개발)

  • Yun Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.1 s.92
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    • pp.102-112
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    • 2005
  • In this work, we developed fully integrated broadband MMIC chip set employing CSP(Chip Size Package) for K/Ka band applications. By utilizing an ACF for the RF-CSP, the fabrication process for the packaged amplifier MMIC could be simplified and made cost effective. $STO(SrTi_{3})$ capacitors were employed to integrate the DC biasing components on the MMIC, and LC parallel circuits were employed for DC feed and ESD protection. A pre-matching technique and RC parallel circuit were used to achieve a broadband matching and good stability fer the amplifier MMIC in K/Ka band. The amplifier CSP MMIC exhibited good RF performance over a wide frequency range in K/Ka band. This work is the first report of a fully integrated CSP amplifier MMIC successfully operating in the K/Ka band.

Development of charge sensitive amplifiers based on various circuit board substrates and evaluation of radiation hardness characteristics

  • Jeong, Manhee;Kim, Geehyun
    • Nuclear Engineering and Technology
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    • v.52 no.7
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    • pp.1503-1510
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    • 2020
  • Ultra-low noise charge sensitive amplifiers (CSAs) based on various types of circuit board substrates, such as FR4, Teflon, and ceramics (Al2O3) with two different designs, PA1 and PA2, have been developed. They were tested to see the noise effect from the dielectric loss of the substrate capacitance before and after irradiation. If the electronic noise from the CSAs is to be minimized and the energy resolution enhanced, the shaping time has to be optimized for the detector, and a small feedback capacitance of the CSA is favorable for a better SNR. Teflon- and ceramic-based PA1 design CSAs showed better noise performance than the FR4-based one, but the Teflon-based PA1 design showed better sensitivity than ceramic based one at a low detector capacitance (<10 pF). In the PA2 design, the equivalent noise and the sensitivity were 0.52 keV FWHM for a silicon detector and 7.2 mV/fC, respectively, with 2 ㎲ peaking time and 0.1 pF detector capacitance. After 10, 100, 103, 104, and 105 Gy irradiation the ENC and sensitivity characteristics of the developed CSAs based on three different substrate materials are also discussed.

Low-Velocity Impact Detection of Composite Plate Using Piezopolymer Sensor Signals without Charge Amplifier (전하증폭기를 사용하지 않은 고분자 압전센서 신호를 이용한 복합재 평판의 저속충격 탐지)

  • 김인걸;정석모
    • Composites Research
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    • v.13 no.6
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    • pp.47-54
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    • 2000
  • One promising method for impact detection of composite structures is based on the use of piezopolymer thin fim (PVDf) sensor. In this paper, the relationship between the contact force and the signals of the attached strain gage and PVDF sensor to the composite plate subjected to low-velocity impact were derived. The relation for the open circuit and short circuit voltage of PVDF sensor was derived based on the equivalent circuit model of the piezoelectric sensor. The work was then extended to include experimental investigation into the use of short circuit voltage of PVDF sensor without using charge amplifier to detect low-velocity impact. The natural frequencies and damping ratio of the composite plate obtained from the vibration test were used to modify the analytical model and therefore the differences between measured and simulated signal of the modified analytical model in both forward and backward problem were considerably reduced. The reconstructed contact force and simulated sensor signals agreed well with the measured contact force, strain gage signal, and PVDF sensor singanl.

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An ASIC Design for Photon Pulse Counting Particle Detection (광계수방식 물리입자 검출용 ASIC 설계)

  • Jung, Jun-Mo;Soh, Myung-Jin;Kim, Hyo-Sook;Han, AReum;Soh, Seul-Yi
    • Journal of IKEEE
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    • v.23 no.3
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    • pp.947-953
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    • 2019
  • The purpose of this paper is to explore an ASIC design for estimating sizes and concentrations of airborne micro-particles by the means of integrating, amplifying and digitizing electric charge signals generated by photo-sensors as it receives scattered photons by the presence of micro-particles, consisting of a pre-amplifier that detects and amplifies voltage or current signal from photo-sensor that generates charges (hole-electron pairs) when exposed to visible rays, infrared rays, ultraviolet rays, etc. according to the intensity of rays; a shaper for shaping the amplified signal to a semi-gaussian waveform; two discriminators and binary counters for outputting digital signals by comparing the magnitude of the shaped signal with an arbitrary reference voltages. The ASIC with the proposed architecture and functional blocks in this study was designed with a 0.18um standard CMOS technology from Global Foundries and the operation and performances of the ASIC has been verified by the silicons fabricated by using the process.

Soft Error Rate for High Density DRAM Cell (고집적 DRAM 셀에 대한 소프트 에러율)

  • Lee, Gyeong-Ho;Sin, Hyeong-Sun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.2
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    • pp.87-94
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    • 2001
  • A soft error rate for DRAM was predicted in connection with the leakage current in cell capacitor. The charge in cell capacitor was decreased during the DRAM operation, and soft error retes due to the leakage current were calculated in various operation mode of DRAM. It was found that the soft error rate of the /bit mode was dominant with small leakage current, but as increasing the leakage current memory mode shown the dominant effect on soft error rate. Using the 256M grade DRAM structure it was predicted that the soft error rate was influenced by the change of the cell capacitance, bit line capacitance, and the input voltage sensitivity of sense amplifier, and these results can be used to the design of the optimum cells in the next generation DRAM development.

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A Fast-Switching Current-Pulse Driver for LED Backlight (LED 백라이트를 위한 고속 스위칭 전류-펄스 드라이버)

  • Yang, Byung-Do;Lee, Yong-Kyu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.7
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    • pp.39-46
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    • 2009
  • A fast-switching current-pulse driver for light emitting diode (LED) backlight is proposed. It uses a regulated drain current mirror (RD-CM) [1] and a high-voltage NMOS transistor (HV-NMOS). It achieves the fast-response current-pulse switching by using a dynamic gain-boosting amplifier (DGB-AMP). The DGB-AMP does not discharge the large HV-NMOS gate capacitance of the RD-CM when the output current switch turns off. Therefore, it does not need to charge the HV-NMOS gate capacitance when the switch turns on. The proposed current-pulse driver achieves the fast current switching by removing the repetitive gate discharging and charging. Simulation results were verified with measurements performed on a fabricated chip using a 5V/40V 0.5um BCD process. It reduces the switching delay to 360ns from 700ns of the conventional current-pulse driver.

고에너지 입자 검출기 STEIN의 아날로그회로 설계

  • Kim, Jin-Gyu;Nam, Ji-Seon;Seo, Yong-Myeong;Jeon, Sang-Min;Mcbride, Steve;Larson, Davin;Jin, Ho;Seon, Jong-Ho;Lee, Dong-Hun;Lin, Robert P.;Harvey, Peter
    • Bulletin of the Korean Space Science Society
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    • 2010.04a
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    • pp.37.5-38
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    • 2010
  • 경희대학교 우주탐사학과에서는 우주공간 탐사를 위해 Trio(TRiplet Ionospheric Observatory)-CINEMA(Cubesat for Ions, Neutrals, Electrons and MAgnetic fields)로 명명된 초소형 위성을 개발하고 있다. 과학임무는 지구 저궤도에서 고에너지 입자를 관측하는 것이며, 이를 위해 고에너지 (2~300keV) 입자 검출기와 자기장 측정기가 탑재된다. 저에너지 입자 검출기 시스템인 STEIN(SupraThermal Electrons, Ions, Neutrals)은 $1\times4$ Array의 개선된 실리콘 검출기와 이온, 전자, 중성입자를 분리할 수 있는 정전장 편향기, 그리고 신호를 처리하는 전자회로로 구성되어있다. 설계된 전자회로는 매우 작은 검출기 기판, 아날로그 기판과 디지털 기판으로 이루어져 있고, 475mW 이하의 저 전력으로 동작한다. 또한 2~100keV의 에너지를 1keV이하의 해상도로 30,000event/sec/pixel 까지 관측 할 수 있도록 회로를 설계하였다. 센서로 들어온 입자로 인해 발생한 펄스의 신호는 4개의 아날로그 회로가 담당하게 되는데, Folded cascode amplifier를 배치하여 증폭률을 높인 Charge sensitive amplifier를 통해 신호를 증폭하고, $2{\mu}s$ unipolar gaussian shaping amplifier를 통해 읽기 쉽게 처리된 신호를 상한파고선별기와 하한파고 선별기를 통해 유효 값 여부를 판단하고, 피크 검출기를 통해 피크의 타이밍을 측정한 뒤 신호를 아날로그-디지털 변환 회로를 통하여 8bit의 값으로 나타내어, 입자들의 Spectrum을 측정하게 된다. 크기와 소비전력이 적음에도 검출성능이 우수하기 때문에 이 시스템은 향후 우주탐사 시스템에 있어 매우 중요한 역할을 수행 할 것으로 생각한다.

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Design of a High-Performance Match-Line Sense Amplifier for Selective Match-Line charging Technique (선택적 매치라인 충전기법에 사용되는 고성능 매치라인 감지 증폭기 설계)

  • Ji-Hoon Choi;Jeong-Beom Kim
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.5
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    • pp.769-776
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    • 2023
  • In this paper, we designed an MLSA(Match-line Sense Amplifier) for low-power CAM(Content Addressable Memory). By using the MLSA and precharge controller, we reduced power consumption during CAM operation by employing a selective match-line charging technique to mitigate power consumption caused by mismatch. Additionally, we further reduced power consumption due to leakage current by terminating precharge early when a mismatch occurs during the search operation. The designed circuit exhibited superior performance compared to the existing circuits, with a reduction of 6.92% and 23.30% in power consumption and propagation delay time, respectively. Moreover, it demonstrated a significant decrease of 29.92% and 52.31% in product-delay-product (PDP) and energy-delay-product (EDP). The proposed circuit was validated using SPECTRE simulation with TSMC 65nm CMOS process.