• Title/Summary/Keyword: Characteristics of Orders

Search Result 407, Processing Time 0.027 seconds

A Study on the Design of 34kW Cryogenic Induction Motor for LNG Spray Pump (34kW급 LNG Spray펌프용 극저온 유도전동기 설계에 관한 연구)

  • Jeong, Dong-Wook;Lee, Ki-Wook;Ryu, Jae-Ho;Park, Gwan-Soo
    • Proceedings of the KIEE Conference
    • /
    • 2015.07a
    • /
    • pp.918-919
    • /
    • 2015
  • Because of environmental regulations in emissions control area, the demand for ships to use LNG as fuel is increasing. Orders for domestic shipbuilders to produce LNG carriers are steadily increasing. However, major appliances such as spray pump, main cargo pump and others have been relied on imports. Therefore, development of pump motor using at cryogenic temperature is necessary. Operating temperature of an induction motor is at $-163^{\circ}C$. At this low temperature, the resistivity of a motor coil is quite different from normal ones, and so does the torque characteristics of motor. This paper presents a designing method of a cryogenic induction motor for LNG pump. The variation of resistivity of motor coil is considered in the design process. The heat source such as core-loss, hysteresis-loss and copper-loss are analyzed to prevent the LNG evaporation which may cause the motor failure.

  • PDF

An Empirical Study on the Influence of Marketing Orientation and Business Performance in Marine Equipment Industry (조선기자재업체의 특성에 따른 마케팅 인지도, 마케팅 활용도 및 성과의 차이에 관한 연구)

  • Hwang, Seok-Jun;Shin, Han-Won;Baek, In-Huhum
    • Journal of Fisheries and Marine Sciences Education
    • /
    • v.22 no.4
    • /
    • pp.516-528
    • /
    • 2010
  • The Korean marine equipment industry is, in significant ways, behind the shipbuilding industry. For example, in terms of the number of orders received, the shipbuilding industry has ranked first in the world since 2003. In contrast, the global competitiveness of Korea's marine equipment industry is still relatively weak. This is important not only for the equipment industry, but because these two industries have many links. The structure of this research was firstly, to identify theoretical issues by looking at the characteristics of the marine equipment companies, marketing recognition, uses of marketing, and financial outcomes. Second, the study developed an analytical framework for empirical examination using configuration of each factor. Third, each factor has been analysed empirically. Forth, this study presents the importance of marketing for marine equipment companies within Korea, as well as in a global market. Finally, the study suggests a new marketing strategy for Korea's marine equipment companies to achieve global competitiveness.

Two-Photon Absorption Cross Sections of Dithienothiophene-Based Molecules

  • Chung, Myung-Ae;Lee, Kwang-Sup;Jung, Sang-Don
    • ETRI Journal
    • /
    • v.24 no.3
    • /
    • pp.221-225
    • /
    • 2002
  • We performed nonlinear transmission measurements and quantum-chemical calculations on dithienothiophene(DTT)-based molecules to gain insight into the effect of acceptor and donor groups on two-photon absorption(TPA) properties. The TPA intensity showed dispersion characteristics of the single-photon absorption spectrum. When the molecules included an asymmetric donor-acceptor pair, the single- and two-photon absorption maximum wavelengths were red-shifted more than when the molecules had a symmetric donor-donor structure. We interpreted this result as indicating that the $S_2$ state plays the dominating role in the absorption process of molecules with a symmetric structure. The experimental TPA ${\delta}$ values at the absorption peak wavelength showed a dependence on the structural variations. We found the self-consistent force-field theory and Hartree-Fock Hamiltonian with single configuration interaction formalism to be valid for evaluating TPA ${\delta}$. Although the quantum-chemical calculations slightly underestimated the experimental ${\delta}$ values obtained from nonlinear trans -mission measurements, they reasonably predicted the dependence of the ${\delta}$ value on the structural variations. We confirmed the role of molecular symmetry by observing that donor-donor substituted structure gave the highest experimental and theoretical TPA ${\delta}$ values and that the donor-acceptor substituted structure showed a greater red-shift in the TPA absorption maximum wavelength. Overall, the theoretical ${\delta}$ values of DTT-based molecules were in the order of $10^{-46}\;cm^4{\cdot}s{\cdot}photon^{-1}$ and are higher than that of AF-50 by nearly two orders of magnitude.

  • PDF

A review on dynamic characteristics of nonlocal porous FG nanobeams under moving loads

  • Abdulaziz Saud Khider;Ali Aalsaud;Nadhim M. Faleh;Abeer K. Abd;Mamoon A.A. Al-Jaafari;Raad M. Fenjan
    • Steel and Composite Structures
    • /
    • v.50 no.1
    • /
    • pp.15-24
    • /
    • 2024
  • This research presents dynamical reaction investigation of pore-dependent and nano-thickness beams having functional gradation (FG) constituents exposed to a movable particle. The nano-thickness beam formulation has been appointed with the benefits of refined high orders beam paradigm and nonlocal strain gradient theory (NSGT) comprising two scale moduli entitled nonlocality and strains gradient modulus. The graded pore-dependent constituents have been designed through pore factor based power-law relations comprising pore volumes pursuant to even or uneven pore scattering. Therewith, variable scale modulus has been thought-out until process a more accurate designing of scale effects on graded nano-thickness beams. The motion equations have been appointed to be solved via Ritz method with the benefits of Chebyshev polynomials in cosine form. Also, Laplace transform techniques help Ritz-Chebyshev method to obtain the dynamical response in time domain. All factors such as particle speed, pores and variable scale modulus affect the dynamical response.

Device Characteristics of AlGaN/GaN MIS-HFET using $Al_2O_3$ Based High-k Dielectric

  • Park, Ki-Yeol;Cho, Hyun-Ick;Lee, Eun-Jin;Hahm, Sung-Ho;Lee, Jung-Hee
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.5 no.2
    • /
    • pp.107-112
    • /
    • 2005
  • We present an AlGaN/GaN metal-insulator-semiconductor-heterostructure field effect transistor (MIS-HFET) with an $Al_2O_3-HfO_2$ laminated high-k dielectric, deposited by plasma enhanced atomic layer deposition (PEALD). Based on capacitance-voltage measurements, the dielectric constant of the deposited $Al_2O_3-HfO_2$ laminated layer was estimated to be as high as 15. The fabricated MIS-HFET with a gate length of 102 m exhibited a maximum drain current of 500 mA/mm and maximum tr-ansconductance of 125 mS/mm. The gate leakage current was at least 4 orders of magnitude lower than that of the reference HFET. The pulsed current-voltage curve revealed that the $Al_2O_3-HfO_2$ laminated dielectric effectively passivated the surface of the device.

Characteristics of Ni/Ti/Al ohmic contact on Al-implanted 4H-SiC (Al 이온 주입된 p-type 4H-SiC에 형성된 Ni/Ti/Al ohmic contact의 특성)

  • Joo, Sung-Jae;Song, Jae-Yeol;Kang, In-Ho;Bahng, Wook;Kim, Sang-Cheol;Kim, Nam-Kyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.06a
    • /
    • pp.208-209
    • /
    • 2008
  • Ni/Ti/Al multilayer system was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Compared with conventional process using Ni, Ni/Ti/Al contact shows perfect ohmic behavior, and possesses much lower contact resistance of about $2.5\times10^{-4}\Omega{\cdot}cm^2$ after $930^{\circ}C$ RTA, which is about 2 orders of magnitude smaller than that of Ni contact. Contact resistance gradually increased as the RTA temperature was lowered in the range of 840 ~ $930^{\circ}C$, and about $3.4\times10^{-4}\Omega{\cdot}cm^2$ was obtained at the lowest RTA temperature of $840^{\circ}C$. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance.

  • PDF

Assessment of Water Pollution and the Ecological Characteristics of the Singu Reservoir

  • Lim, Dohun;Lee, Yoonjin
    • Journal of Environmental Science International
    • /
    • v.27 no.11
    • /
    • pp.1117-1127
    • /
    • 2018
  • This study was carried out to gather basic data for the purpose of proposing a plan to improve the water quality and conserve the aquatic ecosystem of the Singu Agricultural Reservoir in Korea. The water quality, sediment composition, benthic macroinvertebrate distribution, and fish distribution in the Singu Reservoir were analyzed; the reservoir is located close to farmlands, forests, villages, and livestock breeding areas. The results of the water quality analysis are as follows: 5.8~7.8 mg/L for dissolved oxygen, 13.1~20.7 mg/L for chemical oxygen demand, 14.4~18.8 mg/L for suspended solid, 0.96~1.70 mg/L for total nitrogen, 0.07~0.11 mg/L for total phosphorous, and $41.9{\sim}49.8{\mu}g/L$ for $chlorophyll-{\alpha}$. In total, 75 benthic macroinvertebrate specimens belonging to 4 classes, 7 orders, 14 families, and 17 species were recorded. The ecological scores of the benthic macroinvertebrate communities ranged from 11 to 23. Fish specimens recorded belonged to two families and four species. The dominant fish species were Carassius auratus and Pseudorasbora parva, both of which are water-pollutant tolerant species.

Properties of Thin Film a-Si:H and Poly-Si TFT's

  • Ahn, Byeong-Jae;Kim, Do-Young;Yoo, Jin-Su;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2000.04a
    • /
    • pp.169-172
    • /
    • 2000
  • A-Si:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly-Si films were achieved by various anneal techniques ; isothermal, RTA, and excimer laser anneal. The TFT on as-grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from $200^{\circ}C$ to $1000^{\circ}C$. The TFT on poly-Si showed an improved $I_{on}/I_{off}$ ratio of $10^6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly-Si TFTs.

  • PDF

Dynamic analysis and model test on steel-concrete composite beams under moving loads

  • Hou, Zhongming;Xia, He;Wang, Yuanqing;Zhang, Yanling;Zhang, Tianshen
    • Steel and Composite Structures
    • /
    • v.18 no.3
    • /
    • pp.565-582
    • /
    • 2015
  • This paper is concerned with the dynamic analysis of simply-supported steel-concrete composite beams under moving loads. Considering the interface slip between steel girder and concrete slab, the governing motion equations are derived from the direct balanced method. By variable separation approach, the analytical solution of natural frequencies and mode shapes are obtained, as well as the orthogonal conditions. Then the dynamic responses of the composite beam under moving loads are analyzed, and compared with the experimental results. The analysis results show that the governing motion equations become more complicated when interface slip is taken into account, and the dynamic behaviors are significantly influenced by the shear connection stiffness. In the dynamic calculation of composite beams, the global stiffness should not be reduced as the same factor to all orders, but as different ones according to the dynamic stiffness reduction factor (DSRF), to which should be paid more attention in calculation, design and experiment, or else great deviation is inevitable.

Fabrication and Properties of MFISFET using SrBi2Ta2O9SiN/Si Structures (SrBi2Ta2O9SiN/Si 구조를 이용한 MFISFET의 제작 및 특성)

  • 김광호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.15 no.5
    • /
    • pp.383-387
    • /
    • 2002
  • N-channel metal-ferroelectric-insulator-semiconductor field-effect-transistors (MFISFET's) by using $SrBi_2Ta_2O_9$/Silicon Nitride/Si (100) structure were fabricated. The fabricated devices exhibit comfortable memory windows, fast switching speeds, good fatigue resistances, and long retention times that are suitable for advanced ferroelectric memory applications. The estimated switching time and polarization ($2P_r$) of the fabricated FET measured at applied electric field of 376 kV/cm were less than 50 ns and about 1.5 uC/$\textrm{cm}^2$, respectively. The magnitude of on/off ratio indicating the stored information performance was maintained more than 3 orders until 3 days at room temperature. The $I_DV_G$ characteristics before and after being subjected to $10^11$ cycles of fatigue at a frequency of 1 MHz remained almost the same except a little distortion in off state.