• Title/Summary/Keyword: Channel Switching

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A dual path encoder-decoder network for placental vessel segmentation in fetoscopic surgery

  • Yunbo Rao;Tian Tan;Shaoning Zeng;Zhanglin Chen;Jihong Sun
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.18 no.1
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    • pp.15-29
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    • 2024
  • A fetoscope is an optical endoscope, which is often applied in fetoscopic laser photocoagulation to treat twin-to-twin transfusion syndrome. In an operation, the clinician needs to observe the abnormal placental vessels through the endoscope, so as to guide the operation. However, low-quality imaging and narrow field of view of the fetoscope increase the difficulty of the operation. Introducing an accurate placental vessel segmentation of fetoscopic images can assist the fetoscopic laser photocoagulation and help identify the abnormal vessels. This study proposes a method to solve the above problems. A novel encoder-decoder network with a dual-path structure is proposed to segment the placental vessels in fetoscopic images. In particular, we introduce a channel attention mechanism and a continuous convolution structure to obtain multi-scale features with their weights. Moreover, a switching connection is inserted between the corresponding blocks of the two paths to strengthen their relationship. According to the results of a set of blood vessel segmentation experiments conducted on a public fetoscopic image dataset, our method has achieved higher scores than the current mainstream segmentation methods, raising the dice similarity coefficient, intersection over union, and pixel accuracy by 5.80%, 8.39% and 0.62%, respectively.

Design and Implementation of Digital Electrical Impedance Tomography System (디지털 임피던스 영상 시스템의 설계 및 구현)

  • 오동인;백상민;이재상;우응제
    • Journal of Biomedical Engineering Research
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    • v.25 no.4
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    • pp.269-275
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    • 2004
  • Different biological tissues have different values of electrical resistivity. In EIT (electrical impedance tomography), we try to provide cross-sectional images of a resistivity distribution inside an electrically conducting subject such as the human body mainly for functional imaging. However, it is well known that the image reconstruction problem in EIT is ill-posed and the quality of a reconstructed image highly depends on the measurement error. This requires us to develop a high-performance EIT system. In this paper, we describe the development of a 16-channel digital EIT system including a single constant current source, 16 voltmeters, main controller, and PC. The system was designed and implemented using the FPGA-based digital technology. The current source injects 50KHz sinusoidal current with the THD (total harmonic distortion) of 0.0029% and amplitude stability of 0.022%. The single current source and switching circuit reduce the measurement error associated with imperfect matching of multiple current sources at the expense of a reduced data acquisition time. The digital voltmeter measuring the induced boundary voltage consists of a differential amplifier, ADC, and FPGA (field programmable gate array). The digital phase-sensitive demodulation technique was implemented in the voltmeter to maximize the SNR (signal-to-noise ratio). Experimental results of 16-channel digital voltmeters showed the SNR of 90dB. We used the developed EIT system to reconstruct resistivity images of a saline phantom containing banana objects. Based on the results, we suggest future improvements for a 64-channel muff-frequency EIT system for three-dimensional dynamic imaging of bio-impedance distributions inside the human body.

Design of pHEMT channel structure for single-pole-double-throw MMIC switches (SPDT 단일고주파집적회로 스위치용 pHEMT 채널구조 설계)

  • Mun Jae Kyoung;Lim Jong Won;Jang Woo Jin;Ji, Hong Gu;Ahn Ho Kyun;Kim Hae Cheon;Park Chong Ook
    • Journal of the Korean Vacuum Society
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    • v.14 no.4
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    • pp.207-214
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    • 2005
  • This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.

The Difference in the Latitude of Price Acceptance between On- and Off-line transaction in Stock Industry (증권업의 온라인과 오프라인간 가격수용범위 (latitude of price acceptance) 차이에 관한 연구)

  • Hong, Jae-Weon;Kwak, Young-Sik
    • Journal of Global Scholars of Marketing Science
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    • v.13
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    • pp.71-88
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    • 2004
  • Although the factors that affect the width of latitude of price acceptance is well documented, the attempt to develop a practice-oriented methodology to calibrate the region of price insensitivity (i.e., a latitude of price acceptance) for a given individual brand has been relatively rare. The researcher aims to try to full this gap by developing a conjoint analysis-based procedure that can be applied to many industries. Furthermore, we examine the difference in the latitude of price acceptance between on- and off-line transaction in stock industry in Korea. The conjoint analysis-based procedure was applied to measure the disaggregate price response curve for individual stock investment both on- and off line transaction channel. The curves from the samples enable us to estimate the individual choice probabilities corresponding to applied price points. Using t-test the differences in mean choice probabilities between the list price and another price point were tested, through which we can get the latitude of price acceptance for a given brand in stock market. These procedures were tested in on- and off-line stock market in South Korea. The results showed that investors on off-line channel have wider latitudes of price acceptance than the investors on on-line transaction system.

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An I/O Interface Circuit Using CTR Code to Reduce Number of I/O Pins (CTR 코드를 사용한 I/O 핀 수를 감소 시킬 수 있는 인터페이스 회로)

  • Kim, Jun-Bae;Kwon, Oh-Kyong
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.1
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    • pp.47-56
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    • 1999
  • As the density of logic gates of VLSI chips has rapidly increased, more number of I/O pins has been required. This results in bigger package size and higher packager cost. The package cost is higher than the cost of bare chips for high I/O count VLSI chips. As the density of logic gates increases, the reduction method of the number of I/O pins for a given complexity of logic gates is required. In this paper, we propose the novel I/O interface circuit using CTR (Constant-Transition-Rate) code to reduce 50% of the number of I/O pins. The rising and falling edges of the symbol pulse of CTR codes contain 2-bit digital data, respectively. Since each symbol of the proposed CTR codes contains 4-bit digital data, the symbol rate can be reduced by the factor of 2 compared with the conventional I/O interface circuit. Also, the simultaneous switching noise(SSN) can be reduced because the transition rate is constant and the transition point of the symbols is widely distributed. The channel encoder is implemented only logic circuits and the circuit of the channel decoder is designed using the over-sampling method. The proper operation of the designed I/O interface circuit was verified using. HSPICE simulation with 0.6 m CMOS SPICE parameters. The simulation results indicate that the data transmission rate of the proposed circuit using 0.6 m CMOS technology is more than 200 Mbps/pin. We implemented the proposed circuit using Altera's FPGA and confimed the operation with the data transfer rate of 22.5 Mbps/pin.

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Uplink Relaying Scheme for Efficient Frequency Usage in Cognitive Radio Networks (인지 무선 네트워크 환경에서 효율적인 주파수 활용을 위한 상향링크 릴레이 기법)

  • Kim, Se-Woong;Choi, Jae-Kark;Yoo, Sang-Jo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.36 no.4A
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    • pp.356-368
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    • 2011
  • While most of the public radio spectrum bands are allocated to licensed users, cognitive radio has been considered as a promising technology for the efficient spectrum utilization. In this new technology, secondary users opportunistically use the temporally underutilized licensed bands as long as they do not give the harmful interference to primary users. In this paper, we focus on the infra-structured network condition in which the cognitive radio network consists of a cognitive radio base station and multiple secondary users. Upon detecting a primary user, the entire cognitive radio network generally switches to another available channel, even if most of the on-going communications still does not interfere with the primary user. Moreover, the network re-entry process on a new channel causes the service disruption of the on-going communications. For this reason, in this paper, we propose a relaying scheme for efficient frequency usage, in which the secondary user out of the interference range of a primary user performs as a relaying node for the secondary user possibly interfering with a primary user. The entire spectrum switching is not required, and thus, we can avoid the service disruption of the on-going communications as much as possible.

Electrical Characteristics of Ambipolar Thin Film Transistor Depending on Gate Insulators (게이트 절연특성에 의존하는 양방향성 박막 트랜지스터의 동작특성)

  • Oh, Teresa
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.5
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    • pp.1149-1154
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    • 2014
  • To observe the tunneling phenomenon of oxide semiconductor transistor, The Indium-gallum-zinc-oxide thin film transistors deposited on SiOC as a gate insulator was prepared. The interface characteristics between a dielectric and channel were changed in according to the properties of SiOC dielectric materials. The transfer characteristics of a drain-source current ($I_{DS}$) and gate-source voltage ($V_{GS}$) showed the ambipolar or unipolar features according to the Schottky or Ohmic contacts. The ambipolar transfer characteristics was obtained at a transistor with Schottky contact in a range of ${\pm}1V$ bias voltage. However, the unipolar transfer characteristics was shown in a transistor with Ohmic contact by the electron trapping conduction. Moreover, it was improved the on/off switching in a ambipolar transistor by the tunneling phenomenon.

Light and bias stability of c-IGO TFTs fabricated by rf magnetron sputtering

  • Jo, Kwang-Min;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.265.2-265.2
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    • 2016
  • Oxide thin film transistors (TFTs) have attracted considerable interest for gate diver and pixel switching devices of the active matrix (AM) liquid crystal display (LCD) and organic light emitting diode (OLED) display because of their high field effect mobility, transparency in visible light region, and low temperature processing below $300^{\circ}C$. Recently, oxide TFTs with polycrystalline In-Ga-O(IGO) channel layer reported by Ebata. et. al. showed a amazing field effect mobility of $39.1cm^2/Vs$. The reason having high field effect mobility of IGO TFTs is because $In_2O_3$ has a bixbyite structure in which linear chains of edge sharing InO6 octahedral are isotropic. In this work, we investigated the characteristics and the effects of oxygen partial pressure significantly changed the IGO thin-films and IGO TFTs transfer characteristics. IGO thin-film were fabricated by rf-magnetron sputtering with different oxygen partial pressure ($O_2/(Ar+O_2)$, $Po_2$)ratios. IGO thin film Varies depending on the oxygen partial pressure of 0.1%, 1%, 3%, 5%, 10% have been some significant changes in the electrical characteristics. Also the IGO TFTs VTH value conspicuously shifted in the positive direction, from -8 to 11V as the $Po_2$ increased from 1% to 10%. At $Po_2$ was 5%, IGO TFTs showed a high drain current on/off ratio of ${\sim}10^8$, a field-effect mobility of $84cm^2/Vs$, a threshold voltage of 1.5V, and a subthreshold slpe(SS) of 0.2V/decade from log(IDS) vs VGS.

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A Spread Spectrum System Using Adaptive Modulation and Switched Diversity (적응변조와 안테나 교환 다이버시티 기술을 사용한 대역 확산 시스템)

  • Park, Jin-Kyu;Lim, Chang-Heon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.4 s.119
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    • pp.440-447
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    • 2007
  • The switched diversity, although its performance is a little inferior to the selection diversity, is widely used due to its advantage that only one RF circuit is required for its operation without respect to the number of antennas in use. In this paper, we propose an application of the antenna switched diversity to a spread spectrum system with adaptive modulation and derived the optimal antenna switching threshold to maximize the average transmission bit rate. We also compared the performances of the proposed system with those of the two cases using a single antenna and the selection diversity with two antennas in terms of the average number of bits per symbol(BPS), the probability of no transmission, and the average BER. The performance analysis shows that, if the number of paths in a multipath channel environment increases, the performance of the proposed scheme becomes closer to that of the selection diversity based system in terms of the average BPS. Furthermore, the proposed scheme produces as almost high the probability of no transmission as the selection diversity based system for the case of low average SNR, although the former yields a little higher probability of no transmission than the latter fer the case of high average SNR.

Design and FPGA Implementation of FBMC Transmitter by using Clock Gating Technique based QAM, Inverse FFT and Filter Bank for Low Power and High Speed Applications

  • Sivakumar, M.;Omkumar, S.
    • Journal of Electrical Engineering and Technology
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    • v.13 no.6
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    • pp.2479-2484
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    • 2018
  • The filter bank multicarrier modulation (FBMC) technique is one of multicarrier modulation technique (MCM), which is mainly used to improve channel capacity of cognitive radio (CR) network and frequency spectrum access technique. The existing FBMC System contains serial to parallel converter, normal QAM modulation, Radix2 inverse FFT, parallel to serial converter and poly phase filter. It needs high area, delay and power consumption. To further reduce the area, delay and power of FBMC structure, a new clock gating technique is applied in the QAM modulation, radix2 multipath delay commutator (R2MDC) based inverse FFT and unified addition and subtraction (UAS) based FIR filter with parallel asynchronous self time adder (PASTA). The clock gating technique is mainly used to reduce the unwanted clock switching activity. The clock gating is nothing but clock signal of flip-flops is controlled by gate (i.e.) AND gate. Hence speed is high and power consumption is low. The comparison between existing QAM and proposed QAM with clock gating technique is carried out to analyze the results. Conversely, the proposed inverse R2MDC FFT with clock gating technique is compared with the existing radix2 inverse FFT. Also the comparison between existing poly phase filter and proposed UAS based FIR filter with PASTA adder is carried out to analyze the performance, area and power consumption individually. The proposed FBMC with clock gating technique offers low power and high speed than the existing FBMC structures.