• 대한기계학회논문집
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• 제18권2호
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• pp.414-423
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• 1994

The planar laminar impingement jet with a confinement plate has been studied numerically. Discretzing the convection term with the QUICKER scheme, the full Navier-Stokes equations for fluid flow were solved using the well known SIMPLER algorithm. The flow characteristics with Reynolds number and jet exit velocity profile effects on it were considered for H=3, Re=200 - 2000. Results show that vortical flow forms in turn along the confinement and impingement plates as the Reynolds number increases and such a complicated flow pattern has never been reported prior. The jet exit velocity profile is shown to do an important role in determining the position of vortex flow and its size as well as in stagnation and wall jet flow region. Parabolic jet exit profile results in peak of skin friction 1.4-1.6 times greater than that of uniform profile. The channel height effects are also studied and shown to have an effect on flow pattern similar to that of Reynolds number. Also shown is that effects of the jet exit velocity profile becomes less significant over a certain channel height.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.801-803
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• 2004

The current drive in an MOSFET is limited by the intrinsic channel resistance. All the other parasitic elements in a device structure playa significant role and degrade the device performance. These other resistances need to be less than $10{\%}-20{\%}$ of the channel resistance. To achieve the requirements, we should investigate the methodology of separation and quantification of those resistances. In this paper, we developed the extraction method of resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that forms under the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권2호
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• pp.49-53
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• 2005

The current drive in a MOSFET is limited by the intrinsic channel resistance. All other parasitic elements in a device structure perform significant functions leading to degradation in the device performance. These other resistances must be less than 10$\%$-20$\%$ of the channel resistance. To meet the necessary requirements, the methodology of separation and quantification of those resistances should be investigated. In this paper, we developed an extraction method for the resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that gathers below the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.

• 대한전자공학회논문지SD
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• 제48권10호
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• pp.62-66
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• 2011

본 연구에서는 측정된 S-파라미터를 사용하여 드레인-소스 전압 Vds에 무관한 게이트-소스 overlap 캐패시턴스를 추출하고, 이를 바탕으로 deep-submicron MOSFET의 Vds 종속 게이트-벌크 캐패시턴스 곡선을 추출하는 RF 방법이 새롭게 개발 되었다. 추출된 캐패시턴스 값들을 사용한 등가회로 모델과 측정된 데이터가 잘 일치하는 것을 관찰함으로써 추출방법의 정확도가 검증되었다. 추출된 데이터로부터 overlap과 depletion 길이의 Vds 종속 곡선이 얻어졌으며, 이를 통해 drain 영역의 채널 도핑 분포를 실험적으로 측정하였다.

• 한국정보통신학회논문지
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• 제9권6호
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• pp.1182-1188
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• 2005

본 논문에서는 OFDM 방식의 이동 통신 시스템의 성능분석을 위하여 다양한 PDP (Power Delay Profile) 형태에 따른 BER (Bit Error Rate) 의 변화 정도를 고찰하였다. 모의실험은 16-QAM 변조방식의 OFDM 통신시스템 및 Rayleigh 채널을 가정하였다. 채널상태에 따라 매우 다양한 모습을 보이는 PDP의 peak 형태, 기울기, 감쇠정도, echo group 등에 따른 BER의 변화를 자세히 분석하였다. 또한 기존의 제한적인 실측 데이터 모델을 확장하여 새로운 모델을 적용함으로서 좀 더 완전한 성능평가가 이루어질 수 있도록 하였다. 실측 데이터에 근거한 여러 가지 채널모델을 기준으로 모의구현 모델의 파라메터 값들을 도출하여 다양한 전파환경에서의 성능을 분석하였다. 이러한 결과들은 OFDM 시스템에서의 채널상태 변화에 따른 BER 정도를 파악할 수 있는 기준을 제시하고 있으므로 향후 시스템의 설계 및 제작, 성능시험 등의 목적으로 폭넓게 활용될 수 있을 것이다.

• Journal of Electrical Engineering and Technology
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• 제1권2호
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• pp.237-240
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• 2006

The feasibility of a midgap metal gate is investigated for a 32 nm MOSFET for low power applications. The midgap metal gate MOSFET is found to deliver $I_{on}$ as high as a bandedge gate if a proper retrograde channel is used. An adequate design of the retrograde channel is essential to achieve the performance requirement given in the ITRS roadmap. A process simulation is also run to evaluate the feasibility of the necessary retrograde profile in manufacturing environments. Based on the simulated result, it is found that any subsequent thermal process should be tightly controlled to retain transistor performance, which is achieved using the retrograde doping profile. Also, the bandedge gate MOSFET is determined be more vulnerable to the subsequent thermal processes than the midgap gate MOSFET. A guideline for gate workfunction $(\Phi_m)$ is suggested for the 32 nm MOSFET.

• 대한기계학회논문집
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• 제10권1호
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• pp.50-55
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• 1986

본 연구에서는 경계면에 맞춘 좌표계를 이용한 mapping을 통하여 37개봉으로 구성된 유로에서의 전달현상을 분석하였다.

• Korean Journal of Mathematics
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• 제16권1호
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• pp.25-40
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• 2008

We are concerned with a free boundary problem for the 2D Stokes channel flows, which determines the profile of the wing for the channel, so that the given traction force is to be distributed along the wing of the channel. Using the domain embedding technique, the free boundary problem is transferred into the shape optimization problem through the compliant formulation by releasing the traction condition along the variable boundary. The justification of the formulation will be discussed.

• 한국전자파학회논문지
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• 제17권11호
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• pp.1058-1064
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• 2006

본 논문에서는 3차원 광선 추적법을 이용하여 실내 무선 MIMO 채널에서 공간적 특성들을 해석함으로써 채널 용량을 계산하고, 특정 실내 환경에서 최적화된 다중 안테나의 이격거리를 알아내는 방법을 제안한다. 우선, 가시 영역과 비가시 영역을 갖는 복도 환경에서 3차원 광선 추적법을 이용하여 전파 경로, 전송 손실 및 시간지연 확산 등의 채널 공간적 특성들을 계산하고, 시간 지연 확산 특성을 다이폴 안테나와 네트워크 분석기를 이용하여 측정한 후에 계산 값들과 비교하여 3차원 광선 추적법의 정확성을 검증한다. 그런 다음에 그 실내 환경에 다중 안테나를 갖는 송신기와 수신기를 위치시키고, 수신기 위치별로 송 수신 안테나들의 간격에 따른 전파 경로와 전송 손실을 3차원 광선 추적법을 이용하여 계산하며, 이들 계산 값을 이용하여 채널 용량을 계산한다. 이 계산을 100개의 수신 위치에서 4종류의 안테나 방향 조합을 갖는 조건들에서 안테나 간격에 따른 채널용량을 계산하고, 이들 값들을 평균하여 이 실내 환경에서의 최적의 안테나 이격 거리를 알아내었다.

• 한국환경과학회지
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• 제9권1호
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• pp.35-42
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• 2000

In this study, the movable bed model testing was carried out so as to analyze bed profile changes including predicting scouring and deposition of bed profile and to solve hydraulic problems affecting with bed and both-bank between upstream and downstream of intake weir in the Nakdong river channel. The movable bed model testing consists of fundamental test, movable model test and numerical analysis method respectively. The fundamental test was enforced to analyze relationship of discharge and sediment load in the tilting flume. When the movable model test was worked, it was shown that sediment budget between input sediment load and output sediment load was balanced exactly. As a result of movable model test, it was presented that scouring and deposition changes in quantities between the upstream and downstream of modification weir were less than those of nature and planning weir. Finally, numerical analysis method was operated by 1-dimensional bed profile changes model ; HEC-6 model so as to complement unsolving hard problems during movable model test. So, modification weir will sustained the stable bed profile changes than any other weirs in the study channel.