• International Journal of Computer Science & Network Security
• /
• v.23 no.1
• /
• pp.96-102
• /
• 2023

In this paper, we proposed Channel Transfer Function estimation based on Delay and Doppler Profile for underwater acoustic OFDM communication system. It improved the estimation accuracy of the channel transfer function by linear time interpolation the change of Scattered Pilot (SP) insertion frequency in the time direction and the time by Delay and Doppler profile that analyzes the multipath situation of the channel investigated the performance of interpolation by simulation and report it. Previous works is inserted SP every 4 OFDM. It was effective under the environment without multipath, but it has observed that the effect of CTF compensation has been lowered in multipath channel condition. In addition to be better when inserted SP every 2 OFDM. But the amount of sending data will be decrease. Therefore, we conducted research to improve 4 OFDM with new interpolator. A computer simulation was performed as a comparison of SP inserted every 4 OFDM, SP inserted every 2 OFDM, and 4 OFDM with new interpolator. the performance of the proposed system is overwhelmingly improved, and the performance is slightly improved even 64 QAM.

• Magazine of the Korean Society of Agricultural Engineers
• /
• v.30 no.3
• /
• pp.114-120
• /
• 1988

A water surface profile computation model using a standard step procedure was developed for gradually varied flow at an irrigation channel network. Flow characteristics ab Banweol district near Suweon were field monitored during irrigation periol of 1987. The model was applied to the main system at the district and the simulation results were compared to the field data. The results are sumrnarized as follows ; 1. The simulated water surface profiles from the model were in good agreement with the measured water surface profiles at different flow rates. 2. The model applicability for defining a stage-discharge relationship at a channel reach was demonstrated with reasonable accuracy when water stage and friction factor were given. 3. The roughness coefficient was found to be a major factor sigrificantly affecting computed water surface profile among a few physical input parameters for the model.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.22 no.4
• /
• pp.51-58
• /
• 1985

A simple model for the impurity profile in an ion-implanted channel layer of an enhance-ment type IGFET is assumed and a simple expression for the threshold voltage is derived by the assumed impurity profile. In application, the concept of correction factor K is used and the value of threshold voltage is well agreed with experimental value. Also, 1-V character-istics curve is well agreed with experimental value. In addition, this program is packaged and is utilized.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.1974-1976
• /
• 2005

The feasibility of a midgap metal gate is investigated for 32nm MOSFET low power applications. The midgap metal gate MOSFET is found to deliver a driving current as high as a bandedge gate one for the low power applications if a proper retrograde channel is used. An adequate design of the retrograde channel is essential to achieve the performance requirement given in ITRS roadmap. In addition, a process simulation is run using halo implants and thermal processes to evaluate the feasibility of the necessary retrograde profile in manufacturing environments. From the thermal budget point of view, the bandedge metal gate MOSFET is more vulnerable to the following thermal process than the midgap metal gate MOSFET since it requires a steeper retrograde doping profile. Based on the results, a guideline for the gate workfunction and the channel profile in the 32 nm MOSFET is proposed.

• The KSFM Journal of Fluid Machinery
• /
• v.14 no.6
• /
• pp.76-84
• /
• 2011

The effect of inlet velocity profile on the heat transfer coefficient in a rotating smooth channel was investigated experimentally. Three simulated inlet flow conditions of fully developed, uniform, and distorted inlet conditions were tested. The Reynolds number based on the channel hydraulic diameter was ranged from 10,000 to 30,000 and the transient liquid crystal technique was used to measure the distribution of the heat transfer coefficient in the rotating channel. Results showed that the overall heat transfer coefficient increased as the Reynolds number increased. Also, the distribution of the heat transfer coefficient was strongly affected by the inlet flow condition. Generally, the fully developed flow simulated condition showed the highest heat transfer coefficient.

• Journal of the Microelectronics and Packaging Society
• /
• v.14 no.2 s.43
• /
• pp.1-8
• /
• 2007

A flat fluorescent lamp (FFL) was developed as a light source for LCD TV Backlight. The channels of FFL were realized by forming the flat glass at high temperature. The performance of the backlight with FFL was shown to improve by optimizing the FFL channel profile that has elliptical shape, 4.4 mm height and 1.4 mm sealing distance. In this paper, the brightness uniformity of LCD TV backlights was investigated by optical simulation of FFL channel profiles. The brightness of LCD TV using FFL with the optimized channel profile was shown to be $576\;cd/m^2$.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.19 no.11
• /
• pp.2643-2648
• /
• 2015

This paper analyzes the phenomenon of drain induced barrier lowering(DIBL) for doping profiles in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to the change of doping profile to influence on potential distribution. As a results, the DIBL is significantly influenced by projected range and standard projected deviation, the variables of channel doping profiles. The change of DIBL shows greatly in the range of high doping concentration such as $10^{18}/cm^3$. The DIBL increases with decrease of channel length and increase of channel thickness, and with increase of bottom gate voltage and top/bottom gate oxide film thickness.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.11 no.1
• /
• pp.40-50
• /
• 2011

A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson's equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson's equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available $ATLAS^{TM}$ 2D device simulator.

• Korea-Australia Rheology Journal
• /
• v.15 no.2
• /
• pp.83-90
• /
• 2003

In cases of the microfluidic channel, the electrokinetic influence on the transport behavior can be found. The externally applied body force originated from the electrostatic interaction between the nonlinear Poisson-Boltzmann field and the flow-induced electrical field is applied in the equation of motion. The electrostatic potential profile is computed a priori by applying the finite difference scheme, and an analytical solution to the Navier-Stokes equation of motion for slit-like microchannel is obtained via the Green's function. An explicit analytical expression for the induced electrokinetic potential is derived as functions of relevant physicochemical parameters. The effects of the electric double layer, the zeta potential of the solid surface, and the charge condition of the channel wall on the velocity profile as well as the electroviscous behavior are examined. With increases in either electric double layer or zeta potential, the average fluid velocity in the channel of same charge is entirely reduced, whereas the electroviscous effect becomes stronger. We observed an opposite behavior in the channel of opposite charge, where the attractive electrostatic interactions are presented.

• Journal of Broadcast Engineering
• /
• v.18 no.3
• /
• pp.435-444
• /
• 2013

ATSC terrestrial DTV system can support high data rates for HDTV(High Definition Television) service, but it suffers from significant performance degradation caused by multipath fading. Thus, it is necessary to analyze multipath fading effects in order to enhance the DTV reception performance. Generally, DTV channel profile can be obtained by auto-correlation between reference pseudo random signal and received DTV signal. However, in the ATSC terrestrial DTV system, the estimation performance of DTV channel profile may be decreased due to the VSB modulation features. In this paper, improved DTV channel profile measurement technique is analyzed and proposed.