Characteristics of AlGaAs/GaAs Quantum-Well Delta-Doped Channel FET's by Low Pressure Metalorganic Chemical Vapor Deposition (저압 유기금속기상 성장법에 의한 AlGaAs/GaAs 양자 우물에 델타 도우핑된 채널 FET 특성)
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- Journal of the Korean Institute of Telematics and Electronics A
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- v.29A no.4
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- pp.33-37
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- 1992