• Journal of Information Display
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• v.8 no.4
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• pp.15-18
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• 2007

In this paper, we investigated the SLS process to control grain boundary(GB) location in TFT channel region, and it has been found to be applicable for locating the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process and compared the TFT characteristics with a normal SLS method and the grain boundary location controlled SLS method. Also, we have analysed degradation phenomena under hot carrier stress conditions for n-type LDD MOSFETs.

• Journal of the Korean Ceramic Society
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• v.45 no.11
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• pp.675-680
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• 2008

The effect of pore former content on both porosity and pore structure was investigated for porous sintered reaction-bonded silicon nitrides (SRBSNs). A spherical PMMA with $d_{50}=8{\mu}m$ was employed as a pore-former. Its amount ranged from 0 to 30 part. Porous SRBSNs were fabricated by post-sintering at various temperatures where the porosity was controlled at $12{\sim}52%$. The strong tendency of increasing porosity with PMMA content and decreasing porosity with sintering temperature was observed. Measured pore-channel diameter increased $(0.3{\rightarrow}1.1{\mu}m)$ with both PMMA content and sintering temperature.

• Journal of electromagnetic engineering and science
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• v.15 no.2
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• pp.97-103
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• 2015

This paper investigates the effect of absorption loss by a human body to the received signal strength with respect to on-body transmitting antenna positions in on-to-off wireless body area networks. This investigation is based on measurement results obtained from experiments performed on human bodies (male and female) using planar inverted-F antennas in an anechoic chamber. The total absorption loss by the human body is also presented through the SEMCAD-X simulations. Our investigation showed that the received signal strength becomes lower when the transmitting antenna is mounted at a specific position where more absorption loss is experienced. The statistical analyses of on-to-off body channel characteristics based on the measurement results are presented.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.112-120
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• 1996

With the MOsES (mask oxide sidewall etch scheme)process which uses the conventional i-line stepper and isotropic wet etching, CMOSFET's with fine gate pattern of 0.1.mu.m CMOSFET device, the screening oxide is deposited before the low energy ion implantation for source/drain extensions and two step sidewall scheme is adopted. Through the characterization of 0.1.mu.m CMOSFET device, it is found that the screening oxide deposition sheme has larger capability of suppressing the short channel effects than two step sidewall schem. In cse of 200.angs.-thick screening oxide deposition, both NMOSFET and PMOSFET maintain good subthreshold characteristics down to 0.1.mu.m effective channel lengths, and show affordable drain saturation current reduction and low impact ionization rates.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.16-19
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• 2007

In this paper, we present work that has been carried out using the SLS process to control grain boundary(GB) location in TFT channel region and it is possible to locate the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process and compared the TFT characteristics with a normal SLS method and the grain boundary location controlled SLS method. Also, we have analyzed degradation phenomena under hot carrier stress conditions for n-type LDD MOSFETs.

• Journal of Communications and Networks
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• v.6 no.2
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• pp.123-132
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• 2004

The various challenges to realize a fixed wireless ATM network are discussed and some solutions for these challenges are presented. In this paper, the capacity allocation in wireless ATM, the wireless link impact on ATM traffic, and the optimum utilization of the wireless network resonrces for a line of sight (LOS) winless ATM link are studied. An adaptive MQAM modulator is introduced to provide a suitable solution to these issues. The modulator level is adjusted using a unique QoS metric in a wireless network. The metric, termed modified effective bandwidth, takes into account the bandwidth demand, QoS requirements, and outage conditions of the wireless ATM link. A performance study using VBR MPEG-l video traffic in a fixed wireless channel (Ricean channel) demonstrates the advantages of the proposed system.

• Journal of IKEEE
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• v.23 no.3
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• pp.839-843
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• 2019

This paper demonstrates a variable capacitor using fluids as dielectric material and investigates the possibility of its application to a magnetic resonance microscopy's coil. The capacitor structure was integrated with a microfluidic channel and the capacitance was measured while changing the filling percentage of fluids in the channel. The measured capacitance when filling DI water and mineral oil was changed from 1.7 pF to 12 pF and from 1.7 pF to 2 pF, respectively.

• ETRI Journal
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• v.45 no.6
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• pp.974-981
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• 2023

This paper presents a transition-limited pulse-amplitude modulation (TLPAM) signaling method to enable a high data rate and robust wireline communications. TLPAM signaling addresses the impact of high intersymbol interference (ISI) ratios in conventional M-ary PAM signaling methods by limiting the maximum voltage transition level between adjacent symbols. The implementation of a TLPAM signaling encoder is realized by setting back the most significant bits (MSBs) in the queue. The correlation between TLPAM's maximum transition level, effective data rate, and eye width/height is analyzed with various channel loss parameters, followed by characterization and measurement results with a realistic channel setup. The analysis and experimental results reveal the effectiveness of the proposed TLPAM signaling scheme for achieving a high data rate with minimal interference.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.242-242
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• 2012

Transparent oxide semiconductors are increasingly becoming one of good candidates for high efficient channel materials of thin film transistors (TFTs) in large-area display industries. Compare to the conventional hydrogenated amorphous silicon channel layers, solution processed ZnO-TFTs can be simply fabricated at low temperature by just using a spin coating method without vacuum deposition, thus providing low manufacturing cost. Furthermore, solution based oxide TFT exhibits excellent transparency and enables to apply flexible devices. For this reason, this process has been attracting much attention as one fabrication method for oxide channel layer in thin-film transistors (TFTs). But, poor electrical characteristic of these solution based oxide materials still remains one of issuable problems due to oxygen vacancy formed by breaking weak chemical bonds during fabrication. These electrical properties are expected due to the generation of a large number of conducting carriers, resulting in huge electron scattering effect. Therefore, we study a novel technique to effectively improve the electron mobility by applying environmental annealing treatments with various gases to the solution based Li-doped ZnO TFTs. This technique was systematically designed to vary a different lithium ratio in order to confirm the electrical tendency of Li-doped ZnO TFTs. The observations of Scanning Electron Microscopy, Atomic Force Microscopy, and X-ray Photoelectron Spectroscopy were performed to investigate structural properties and elemental composition of our samples. In addition, I-V characteristics were carried out by using Keithley 4,200-Semiconductor Characterization System (4,200-SCS) with 4-probe system.

• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.219-222
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• 2004

There are several factors that disturb an Ultra-Wideband (UWB) radio propagation in an indoor environment such as path loss, shadowing and multipath fading. These factors directly affect the quality of the received signal. In this paper, we investigated the influence of the human body shadowing on UWB propagation based on measured wireless channel in an anechoic chamber. The characteristics of the UWB channel including the transmitter and the receiver antenna effects are acquired over the frequency bandwidth of 3${\sim}$11 GHz. The major factors such as the power delay profile (PDP), the angular power distribution (APD), the pulse distortion and the RMS delay spread caused by the human body shadowing are presented.