• 제목/요약/키워드: Chang-ga

검색결과 780건 처리시간 0.037초

GaAs MESFET의 온도변화에 대한 게이트누설전류 특성 (Gate Leakage Current Characteristics of GaAs MESFETs with Different Temperature)

  • 원창섭;홍재일
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 학술대회 논문집 전문대학교육위원
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    • pp.24-27
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    • 2003
  • In this paper, We make experiment on two methode for GaAs MESFET with temperature variation. One method, we mesure gate leakage current at open source electrode. another we mesure gate leakage current at short source electrode. The difference of two current has been tested and provide that the existence of another source to Schottky barrier height against the image force lowering effect.

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GaAs MESFET의 채널전하에 의한 전기적 특성해석 (Electrical Characteristics of GaAs MESFET's Considering Channel Charge)

  • 원창섭;홍재일
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 학술대회 논문집 전문대학교육위원
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    • pp.165-168
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    • 2005
  • In this paper, we examined channel charge which occurs in electron accumulation after electron velocity saturation. Generally, short gate GaAs MESFET show, saturated electron velocity leading to current satulation. When electron velocity is saturated, deletion layer is still open channel and it plays a key role in deciding saturation current mode we proposed channel charge model in channel after electron velocity saturation.

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불순물이 심하게 첨가된 InGaP 박막의 Moss-Burstein 효과관측

  • 정부성;박현기;장수경;정중현;박홍이
    • ETRI Journal
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    • 제13권4호
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    • pp.80-87
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    • 1991
  • Heavily unintentionally doped n-type InGaP wa grown by LPE technique. Temperature and excitation power dependence of PL measurements were carried out to investigate the first observed 2.107 eV PL peak in $In_0.5$$Ga_0.5$P. Also the unintentionally doped major impurity was found to be sulfur through XRF technique.

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Strain에 따른 AlGaN QW LD의 발광특성 해석 (Analysis of emission spectrum of strained AlGaN QW LD)

  • 김종대;이종창
    • 한국광학회:학술대회논문집
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    • 한국광학회 2005년도 제16회 정기총회 및 동계학술발표회
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    • pp.290-291
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    • 2005
  • We have presented a comprehensive effective-mass Hamiltonian for strained Wurtzite semiconductors using k${\cdot}$p method and Kane's model. This theoretical groundwork provides a foundation for investigating the electrical and optical properties of wurtzite strained quantum-well lasers.

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