Analysis of emission spectrum of strained AlGaN QW LD

Strain에 따른 AlGaN QW LD의 발광특성 해석

  • 김종대 (홍익대학교 전자전기 공학부) ;
  • 이종창 (홍익대학교 전자전기 공학부)
  • Published : 2005.02.17

Abstract

We have presented a comprehensive effective-mass Hamiltonian for strained Wurtzite semiconductors using k${\cdot}$p method and Kane's model. This theoretical groundwork provides a foundation for investigating the electrical and optical properties of wurtzite strained quantum-well lasers.

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