• Electronics and Telecommunications Trends
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• v.33 no.6
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• pp.12-23
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• 2018

In this paper, we review the technical trends of diamond and gallium oxide ($Ga_2O_3$) semiconductor technologies among ultra-wide bandgap semiconductor technologies for harsh environments. Diamond exhibits some of the most extreme physical properties such as a wide bandgap, high breakdown field, high electron mobility, and high thermal conductivity, yet its practical use in harsh environments has been limited owing to its scarcity, expense, and small-sized substrate. In addition, the difficulty of n-type doping through ion implantation into diamond is an obstacle to the normally-off operation of transistors. $Ga_2O_3$ also has material properties such as a wide bandgap, high breakdown field, and high working temperature superior to that of silicon, gallium arsenide, gallium nitride, silicon carbide, and so on. In addition, $Ga_2O_3$ bulk crystal growth has developed dramatically. Although the bulk growth is still relatively immature, a 2-inch substrate can already be purchased, whereas 4- and 6-inch substrates are currently under development. Owing to the rapid development of $Ga_2O_3$ bulk and epitaxy growth, device results have quickly followed. We look briefly into diamond and $Ga_2O_3$ semiconductor devices and epitaxy results that can be applied to harsh environments.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.4
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• pp.259-267
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• 2019

An active clamp flyback (ACF) converter applies a clamp circuit and circulates the energy of leakage inductance to the input side, thereby achieving a zero-voltage switching (ZVS) operation and greatly reducing switching losses. The switching losses are further reduced by applying a gallium nitride field effect transistor (GaN-FET) with excellent switching characteristics, and ZVS operation can be accomplished under light load with boundary conduction mode (BCM) operation. Optimal design is performed on the basis of loss analysis by selecting magnetization inductance based on BCM operation and a clamp capacitor for loss reduction. Therefore, the size of the reactive element can be reduced through high-frequency operation, and a high-efficiency and high-power-density converter can be achieved. This study proposes an optimal design for a high-efficiency and high-power-density BCM ACF converter based on GaN-FETs and verifies it through experimental results of a 65 W-rated prototype.

• The Korean Journal of Nuclear Medicine
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• v.23 no.1
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• pp.27-33
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• 1989

The relationship between angiographic findings and those of $^{67}Ga$ scan was evaluated in 30 patients with primary hepatocellular carcinoma diagnosed by either pathological examination or laboratory, radiologic findings. Twenty-three cases revealed hot activities on $^{67}Ga$ scan and definite tumor stains on angiography. Main findings of $^{67}Ga$ scans of 7 cases were isoactivity in 5 and cold area in 2, 5 of which revealed faint or no tumor stain on angiography. Cold areas within the primary hepatocellular carcinoma were noted in 9 cases by $^{67}Ga$ scan. In 6 cases these were due to tumor necrosis. Remaining 3 cases had arterioportal shunt, portal vein thrombosis and one had necrosis as well. These results indicate that gallium uptake of primary hepatocellular carcinoma seems to be relatively correlated with tumor stains on angiography. It is well known that the necrotic portion of primary hepatocellular carcinoma does not uptake gallium and it's the main cause of cold areas on $^{67}Ga$ scan. And we suspect that the hemodynamic changes of primary hepatocellular carcinoma such as large arterioportal shunt, portal vein thromosis may cause the decreased activity on $^{67}Ga$ scan.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.163-166
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• 2001

The stochiometric mix of evaporating materials for the $ZnGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $ZnGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnGa_{2}Se_{4}$ single crystal trun films measured from Hall effect by van der Pauw method are $9.63{\times}10^{17}cm^{-3}$, $296cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c axis of the $ZnGa_{2}Se_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 251.9 meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on $ZnGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton $(A^{0},X)$ having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.220-226
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• 1993

An investigation was made of the dependences of the lattice constants and the energy gap on the composition of $TlGa_xIn_{1-x}Se_2$ single cystals grown by Bridgman method. It was found that a discontinuity in $TlGa_xIn_{1-x}Se_2$ solid solutions occurred in the composition range 0.25$0.0{\leq}X{\leq}0.25$) to the monoclinic structure ($0.65{\leq}X{\leq}1.0$) was observed in this composition range. The temperature dependences of the energy gap and the dielectric constant in $TlGaSe_2$ single crystal have shown that the anomalies appeared at 107 K and 120 K corresponding to first-order and second-order phase transitions, respectively.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.191-196
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• 2001

GaN is a key material for blue and ultraviolet optoelectronics. Postannealing process was employed to investigate the structural change and the effect on electrical property of the GaN thin film grown on reactive ion beam(RIB) treated sapphire (0001) substrate. Full width half maximum (FWHM) of double crystal x-ray diffraction (DCXRD) spectra and Hall mobility of the specimen were significantly changed depending on the postannealing time at $1000^{\circ}C$ in N2 atmosphere. FWHM of DCXRD reduced upto about 50arc-sec and the mobility increased about $80\textrm{cm}^2$/V.sec. The postannealed specimen with the best mobility was compared with sample without annealing by TEM. The former sample showed a decrease in the lattice strain and reduction of dislocation density by about 56~59%. This implies that there is a strong correlation between crystalline quality and the electrical property of the film. The Present results clearly show that the combination of RIB pretreatment and proper post annealing conditions results in the improved properties of GaN films grown by MOCVD.

• Clinical Endoscopy
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• v.55 no.1
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• pp.77-85
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• 2022

Background/Aims: Endoscopic submucosal dissection (ESD) of gastric tumors in the mid-to-upper stomach is a technically challenging procedure. This study compared the therapeutic outcomes and adverse events of ESD of tumors in the mid-to-upper stomach performed under general anesthesia (GA) or monitored anesthesia care (MAC). Methods: Between 2012 and 2018, 674 patients underwent ESD for gastric tumors in the midbody, high body, fundus, or cardia (100 patients received GA; 574 received MAC). The outcomes of the propensity score (PS)-matched (1:1) patients receiving either GA or MAC were analyzed. Results: The PS matching identified 94 patients who received GA and 94 patients who received MAC. Both groups showed high rates of en bloc resection (GA, 95.7%; MAC, 97.9%; p=0.68) and complete resection (GA, 81.9%; MAC, 84.0%; p=0.14). There were no significant differences between the rates of adverse events (GA, 16.0%; MAC, 8.5%; p=0.18) in the anesthetic groups. Logistic regression analysis indicated that the method of anesthesia did not affect the rates of complete resection or adverse events. Conclusions: ESD of tumors in the mid-to-upper stomach at our high-volume center had good outcomes, regardless of the method of anesthesia. Our results demonstrate no differences between the efficacies and safety of ESD performed under MAC and GA.

• Journal of agriculture & life science
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• v.43 no.2
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• pp.23-30
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• 2009

The object of this study was to evaluate the effect of the gibberellin treatment on fruit enlargement and ripening promotion in 'Niitaka' pear(Pyms pynfolia). Fruit weight was similar between $GA_{4+7}$ treatments and the gibberellin-paste control, but fairly increased of fruit weight compared to non-treatment Most effective time for $GA_{4+7}$ treatment to increase diameter and length was on 35 and 40 days after full bloom, respectively. Shape index was similar in all treatments. Fruit enlargement at the period of early growth, $GA_{4+7}$ 2.4% treatment was remarkably effective than $GA_{3}+GA_{4+7}$ 2.7% treatment or non-treatment However at the period of maturity, $GA_{4+7}$ 2.4% treatment and $GA_{3}+GA_{4+7}$ 2.7% treatment showed little differences in fruit enlargement and coloring. In maturing promotion effect, young fruit treated with $GA_{3}+GA_{4+7}$ showed similar fruit coloring to ethephon treatment on 35 days after full bloom, and both of those treatments promoted fruit coloring than non- treatment about 6 days. $GA_{3}+GA_{4+7}$ treatments resulted higher solid content and decreased acidity than non-treatment However, there was no differences in fruit hardness comparing to non-treatment As a result, gibberellin was most effective in fruit enlargement, so as all $GA_{3}+GA_{4+7}$ treatments were more effective on fruit enlargement than ethephon treatment or non-treatment Specifically, when $GA_{3}+GA_{4+7}$ was treated 35days after full bloom of flower, the diameter, the length and the shape of fruit index were best, and fruit coloring was good as well.

• Proceedings of the KIEE Conference
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• 2004.10a
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• pp.40-42
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• 2004

In this paper the optimum design of LIM is proposed using GA, RSM for maximum thrust force and minimum weight. Four design variables(slot, width, teeth width, slot depth, stack height)are chosen as independent ones. The simulation results using GA and RSM are discussed.

• ETRI Journal
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• v.4 no.1
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• pp.3-8
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• 1982

성장된 GaInAsP/InP DH wafer로부터 상온에서 duty 5%까지 Pulse 동작이 가능한 전면전극(broad contact) 및 stripe 구조 LD(711이저 다이오드)를 제작하였다. 또 이렇게 제작된 LD의 I-V특성, 1-L 특성 및 발진파장 등을 조사하기 위해 LD 구동회로 및 Ge 태양전지와 Ge-APD를 이용한 광 검출회로를 제작하였다. 이들을 이용해 제작한 LD의 특성을 조사한 결과 stripe 구조 LD인 경우 발진개시전류($I_th$)가 900mA, 발진파장이 $1.29\mum$, 파장반치폭(FWHM)이 $60\AA$였으며 $1.33I_th$까지 kink 없이 동작이 가능하였다.