• 제목/요약/키워드: Chalcogenide Compound

검색결과 10건 처리시간 0.023초

적외선 광학렌즈 제작을 위한 GeSe의 벌크 제작 및 특성 연구 (A Study on the Properties and Fabrication of Bulk Forming GeSe Based Chalcogenide Glass for Infrared Optical Lens)

  • 배동식;여종빈;박정후;이현용
    • 한국전기전자재료학회논문지
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    • 제26권9호
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    • pp.641-645
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    • 2013
  • Chalcogenide glass has superior property of optical transmittance in the infrared region. Glass made using Ge-Se how many important optical applications. We have determined the composite formular of $Ge_{0.25}Se_{0.75}$ to be the GeSe chalcogenide glass composition appropriate for IR lenses. Also, the optical, thermal and physical characteristics of chalcogenide glass depended on the composition ratio. GeSe bulk sample is produced using the traditional melt-quenching method. The optical, structural, thermal and physical properties of the compound were measured by using Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), and Scanning electron microscope (SEM) respectively.

Synthesis of Ultra-long Hollow Chalcogenide Nanofibers

  • 좌용호
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.3.1-3.1
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    • 2011
  • Nanoengineered materials with advanced architectures are critical building blocks to modulate conventional material properties or amplify interface behavior for enhanced device performance. While several techniques exist for creating one dimensional heterostructures, electrospinning has emerged as a versatile, scalable, and cost-effective method to synthesize ultra-long nanofibers with controlled diameter (a few nanometres to several micrometres) and composition. In addition, different morphologies (e.g., nano-webs, beaded or smooth cylindrical fibers, and nanoribbons) and structures (e.g., core-.shell, hollow, branched, helical and porous structures) can be readily obtained by controlling different processing parameters. Although various nanofibers including polymers, carbon, ceramics and metals have been synthesized using direct electrospinning or through post-spinning processes, limited works were reported on the compound semiconducting nanofibers because of incompatibility of precursors. In this work, we combined electrospinning and galvanic displacement reaction to demonstrate cost-effective high throughput fabrication of ultra-long hollow semiconducting chalcogen and chalcogenide nanofibers. This procedure exploits electrospinning to fabricate ultra-long sacrificial nanofibers with controlled dimensions, morphology, and crystal structures, providing a large material database to tune electrode potentials, thereby imparting control over the composition and shape of the nanostructures that evolved during galvanic displacement reaction.

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하부전극 구조 개선에 의한 상변화 메모리의 전기적 특성 (Electrical characteristic of Phase-change Random Access Memory with improved bottom electrode structure)

  • 김현구;최혁;조원주;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.69-70
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    • 2006
  • A detailed Investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Sb-Te material for phase-change cell. A novel bottom electrode structure and manufacture are described. We used heat radiator structure for improved reset characteristic. A resistance change measurement is performed on the test chip. From the resistance change, we could observe faster reset characteristic.

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Review of Low-Dimensional Nanomaterials for Blue-Light Emission

  • Won Kook Choi
    • 센서학회지
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    • 제32권6호
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    • pp.391-402
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    • 2023
  • Low-dimensional (zero-dimensional (0-dim), 2-dimensional (2-dim)) nanoparticles, such as chalcogenide compound semiconductors, III-V semiconductors, transition metal dichalcogenides (TMDs), II-VI semiconductors, nanocarbons, hybrid quantum dots (QDs), and perovskite QDs (PQDs), for which blue light emission has been observed, are reviewed. Current synthesis and device fabrication technologies as well as their prospective applications on next-generation quantum-dot-based light-emitting diodes are discussed.

상변화 메모리 응용을 위한 ${Ge_1}{Se_1}{Te_2}$ 비정질 칼코게나이드 박막의 전도 록성 (Conductivity Characteristics of ${Ge_1}{Se_1}{Te_2}$ Amorphous Chalcogenide Thin Film for the Phase-Change Memory Application)

  • 최혁;김현구;조원주;정홍배
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.32-33
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    • 2006
  • As next generation nonvolatile memory, chalcogenide-based phase change memory can substitute for a conventional flash memory from its high performance. Also, fast writing speed, low writing voltage, high sensing margin, low power consumption and repetition reliability over $10^{15}$ cycle shows its possibility. At our laboratory, we invented ${Ge_1}{Se_1}{Te_2}$ material to alternate with conventional ${Ge_2}{Sb_2}{Te_5}$ for improve its ability. We respect the ${Ge_1}{Se_1}{Te_2}$ material can be a solution for high power consumption problem and long time at 'set' performance. A conductivity experiment from variable temperature was performed to see reliability of repetition at read and write performance. Compare with conventional ${Ge_2}{Sb_2}{Te_5}$ material, these two materials are used as complex compound to get the finest parameter.

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용융염법을 이용한 저차원 구조의 금속 칼코겐 화합물의 합성 및 구조 특성연구 (Synthesis and Characterization of Low-Dimensional Chalcogenide Compound via a Molten Salt Method)

  • 최덕수;윤혜식;오화숙;김돈;윤호섭;박윤봉
    • 대한화학회지
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    • 제48권5호
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    • pp.504-509
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    • 2004
  • 구리 금속 분말과 혼합 알칼리금속 다셀레늄화물 용융염 ($KNaSe_x$) 과의 반응을 통하여 판상형태의 결정을 갖는 $KCu_4Se_3$ 화합물을 얻었다. $KCu_4Se_3$화합물의 구조는 X-선 단결정 회절법에의해 결정되었으며 사반면상을 갖는다. (P4/mmm, a=4.013(1)${\AA}$, c=9.712(1)${\AA}$, z=1, R=6.7%). 그 구조는 안티 PbO 구조를 갖는 $Cu_2Se_2$ 층이 겹쳐짐으로서 만들어지는 $[Cu_4Se_3]_n^{n-}$의 이중층으로 구성되어있다. $KCu_4Se_3$의 단결정에 대한 온도 변화에 따른 저항 측정을 통하여 전도체의 특성을 확인하였으며 300 K에서 $1.8{\times}10^{-4}{\Omega}{\cdot}cm$과 20 K에서 $1.0{\times}10^{-6}{\Omega}{\cdot}cm$의 저항 값을 갖는다.

상변화 메모리 응용을 위한 Sb을 첨가한 $Ge_1Se_1Te_2$ 박막의 열처리 후 상변화 특성 (Phase-Change Properties of annealed $Ge_1Se_1Te_2$ thin film with Sb doping for Application of Phase-Change Random Access Memory)

  • 김현구;최혁;남기현;정홍배
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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    • pp.106-107
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    • 2007
  • A detailed investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Se-Te material for phase-change cell. Actually, the performance properties have been improved surprisingly then conventional Ge-Sb-Te. However, crystallization time was as long as ever for amorphization time. We conducted this experiment in order to solve that problem by doping-Sb with annealing.

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Properties and Peculiar Features of Application of Isoelectronically Doped $A^2B^6$ Compound-Based Scintillators

  • Ryzhikov, V.;Starzhinskiy, N.
    • Journal of Radiation Protection and Research
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    • 제30권2호
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    • pp.77-84
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    • 2005
  • The authors submit the data concerning the methods of obtaining semiconductor scintillators on the basis of the zinc chalcogenide crystal doped with impurities (Te, Cd, O, $Me^{III}-metals$ Al, In, etc.). Characteristics of such crystals and mechanisms for the semiconductor scintillator luminescence are described as well. The scintillator luminescence spectra maximums are located within the range 450-640nm, which depends on the method of preparing the scintillator. The luminescence decay time ranges within $0.5-10{\mu}s\;and\;30-150{\mu}s$. The afterglow level is less than 0.01% after $10-20{\mu}s$, and the radiation stability is ${\geq}5{\cdot}10^8$ rad. Thermostability of the output characteristics of new semiconductor scintillators on the basis of zinc selenide is prescribed by thermodynamic stability of the principal associative radiative recombination centers that come into existence due to the crystal lattice inherent imperfections. Certain application fields of the new scintillators are examined taking into account their particular qualities.

PVA/AA/SeO2 광고분자 필름의 두께 및 Eosin Y 함량 변화에 따른 회절효율 향상에 관한 연구 (Diffraction Efficiency Improvement of PVA/AA/SeO2 Photopolymer with Various Film Thickness and Eosin Y Contents)

  • 허기영;장환호;김대흠
    • 한국광학회지
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    • 제20권4호
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    • pp.230-235
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    • 2009
  • 광고분자 필름은 홀로그램을 저장하기 위한 기술로서, 광굴절 결정보다 고감도, 간단한 실시간 처리, 저렴한 가격 등의 장점으로 홀로그래픽 저장기술 응용에 보다 손쉽게 적용할 수 있다. 본 연구에서는 기존의 PVA/AA계 광고분자 필름에 광학적 활성을 가지는 $SeO_2$를 첨가한 광고분자 필름을 제조하였다. 홀로그램을 저장하기 위한 기록매질로서 최적의 회절효율을 가지는 광고분자 필름을 만들기 위하여, 광감각제인 Eosin Y의 농도와 광고분자 필름의 두께를 달리하여 실험하였다. 광고분자 필름의 회절효율은 532 nm 레이저로, $40^{\circ}$의 입사각에서 측정하였다. 실험 결과, Eosin Y의 농도가 0.0045 g이고, 필름 두께가 $297{\mu}m$일 때, 78.70%로 가장 높은 회절효율 값을 나타내었다.