• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.133-138
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• 2017

We evaluated the structural, electrical and optical properties of tungsten (W)-doped $Ge_8Sb_2Te_{11}$ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick $Ge_8Sb_2Te_{11}$ and W-doped $Ge_8Sb_2Te_{11}$ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the $0{\sim}400^{\circ}C$ temperature range. The structural properties were analyzed using X-ray diffraction (X'pert PRO, Phillips). The results showed increased crystallization temperature ($T_c$) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap ($E_{op}$) and an increase in the $E_{op}$ difference (${\Delta}E_{op}$). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance ($R_s$), which reduces programming current in the memory device.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.688-688
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• 2013

Al-doped ZnO (AZO) thin films have attracted a lot of attention as a cheap transparent conducting oxide (TCO) material that can replace the expensive Sn-doped In2O3. In particular, AZO thin films are widely used as a window layer of chalcogenide-based thin film solar cells such as Cu(In,Ga)Se2 and Cu2ZnSnS4 (CZTS). Mostly important requirements for the window layer material of the thin film solar cells are the high transparency and the low sheet resistance, because they influence the light absorption by the activelayer and the electron collection from the active layer, respectively. In this study, we prepared the AZO thin films by RF magnetron sputtering using a ZnO/Al2O3 (98：2wt%) ceramic target, and the effect of the sputtering condition such as the working pressure, RF power, and the working distance on the optical, electrical, and crystallographic properties of the AZO thin films was investigated. The AZO thin films with optimized properties were used as a window layer of CZTS thin film solar cells. The CZTS active layers were prepared by the electrochemical deposition and the subsequent sulfurization process, which is also one of the cost-effective synthetic approaches. In addition, the solar cell properties of the CZTS thin film solar cells, such as the photocurrent density-voltage (J-V) characteristics and the external quantum efficiency (EQE) were investigated.

• Journal of the Korean Ceramic Society
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• v.43 no.3 s.286
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• pp.177-184
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• 2006

Dy $L_3$-edge XANES and EXAFS spectra of chalcogenide Ge-As-S glass doped with ca. 0.2 wt% dysprosium have been investigated along with some reference Dy-containing crystals. Amplitude of the white-line peak in XANES spectrum of the glass sample turns out to be stronger than that of other reference crystals, i.e., $DY_2S_3,\;Dy_2O_3\;and\;DyBr_3$. It has been verified from the Dy $L_3$-edge EXAFS spectra that a central Dy atom is surrounded by $6.7{\pm}0.5$ sulfur atoms in its first coordination shell in the Ge-As-S glass, which is relatively smaller than 7.5 of the $Dy_2S_3$ crystal. Averaged Dy-S inter-atomic-distance of the glass ($2.78{\pm}0.01{\AA}$) also turns out to be somewhat shorter than that of the $Dy_2S_3$ crystal ($2.82{\pm}0.01{\AA}$). Such nanostructural changes occurring at Dy atoms imply there being stronger covalency of Dy-S chemical bonds in the Ge-As-S glass than in the crystal counterpart. The enhanced covalency in the nanostructural environment of $Dy^{3+}$ ions inside the glass would then be responsible for optical characteristics of the $4f{\leftrightarrow}4f$ transitions of the dopants, i.e., increase of oscillator strengths and spontaneous radiative transition probabilities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.976-979
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• 2003

In this study, we formed the 2-dimensional holographic grating in order to mamufactured 2-dimensional photonic crystal in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ and $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ thin film which have the excellent optical sensetivity using by He-Ne laser(632.8nm). The intensity of incident beam was 2.5mW and incident angle that $2{\theta}$ is $20^{\circ}$. We formed the holographic grating after had formed the 1-dimansional holographic grating and then rotate the sample. We confirmed that 2-dimensional holographic grating result of the figure of diffracted beam and AFM(Atomic Forced Microcopy) image.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.215-215
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• 2010

The feasibility of InSbTe (IST) chalcogenide materials prepared by metalorganic chemical vapor deposition (MOCVD) for phase-change memory (PRAM) applications was demonstrated. Films grown below $225^{\circ}C$ exhibited an amorphous structure, and the films grown at $300^{\circ}C$ Cincluded various crystalline phases such as In-Sb-Te, In-Sb, In-Te, and Sb-Te. The composition of the amorphous films grown at $225^{\circ}C$ was dependent on the working pressure. Films grown at $225^{\circ}C$ exhibited a smooth morphology with a root mean square(rms) roughness of less than 1nm, and the step-coverage of the films grown on a trench structure with an aspect ratio of 5:1 was greater than 90%. An increase in deposition time increased the filling rate, while retaining the conformal step-coverage. Films grown at $225^{\circ}C$ for 3h in a working pressure of $13{\times}10^2$ Pa exhibited a reproducible and complete filling in a trench structure.

• ETRI Journal
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• v.38 no.2
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• pp.265-271
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• 2016

We analyzed the interface characteristics of Zn-based thin-film buffer layers formed by a sulfur thermal cracker on a $Cu(In,Ga)Se_2$ (CIGS) light-absorber layer. The analyzed Zn-based thin-film buffer layers are processed by a proposed method comprising two processes - Zn-sputtering and cracker-sulfurization. The processed buffer layers are then suitable to be used in the fabrication of highly efficient CIGS solar cells. Among the various Zn-based film thicknesses, an 8 nm-thick Zn-based film shows the highest power conversion efficiency for a solar cell. The band alignment of the buffer/CIGS was investigated by measuring the band-gap energies and valence band levels across the depth direction. The conduction band difference between the near surface and interface in the buffer layer enables an efficient electron transport across the junction. We found the origin of the energy band structure by observing the chemical states. The fabricated buffer/CIGS layers have a structurally and chemically distinct interface with little elemental inter-diffusion.

• Journal of the Korean Electrochemical Society
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• v.15 no.1
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• pp.12-18
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• 2012

The prohibitively high cost of Pt catalyst might be the biggest barrier for the commercialization of proton exchange membrane fuel cells (PEMFC) of which wide application is expected. Worldwide research efforts for the development of alternative to Pt oxygen reduction reaction (ORR) catalyst are made recently. One of the important considerations in the catalyst development is durability issue as well as economic aspect. From this point of view, platinum group metals (PGM) except Pt can be a candidate for replacing Pt catalyst because the material properties and the catalytic activity of PGM are expected to be similar to Pt. In contrast to Ir, Rh and Os to which not so much attention has been paid as an ORR catalyst, Pd that is most similar to Pt in terms of material properties and catalytic activity and Ru that is in the form of chalcogenide have been studied intensively. Activity comparison between non-Pt and Pt oxygen reduction catalysts by half cell test using RDE (rotating disk electrode) or PEMFC MEA (membrane electrode assembly) operation indicates that Pd-based catalysts show the most similar activity to Pt. In this paper we analyze the composition of PGM ORR catalyst in literature to promote the development of non-Pt ORR catalyst.

• Korean Journal of Materials Research
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• v.27 no.2
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• pp.89-93
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• 2017

A thin film thermoelectric generator that consisted of 5 p/n pairs was fabricated with $1{\mu}m$-thick n-type $In_3Sb_1Te_2$ and p-type $Ge_2Sb_2Te_5$ deposited via radio frequency magnetron sputtering. First, $1{\mu}m$-thick GST and IST thin films were deposited at $250^{\circ}C$ and room temperature, respectively, via radio-frequency sputtering; these films were annealed from 250 to $450^{\circ}C$ via rapid thermal annealing. The optimal power factor was found at an annealing temperature of $400^{\circ}C$ for 10 min. To demonstrate thermoelectric generation, we measured the output voltage and estimated the maximum power of the n-IST/p-GST generator by imposing a temperature difference between the hot and cold junctions. The maximum output voltage and the estimated maximum power of the $1{\mu}m$-thick n-IST/p-GST TE generators are approximately 17.1 mV and 5.1 nW at ${\Delta}T=12K$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.62-62
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• 2011

현재 TFT의 주요 재료로 사용되는 비정질 실리콘은 전하 이동도가 매우 작아 고속 스위칭과 같은 고성능을 구현하기 어려우며 이동도 향상을 위해 고온 공정이 적용되야 하는 단점을 가지고 있다. 이러한 문제를 해결하기 위해 전하 이동도가 큰 박막재료를 바탕으로 박막 트랜지스터의 연구개발이 필요하며 이를 위한 해결책 중 새로운 스위칭 동작원리를 제공하며 고 이동도를 갖는 비정질 칼코지나이드 재료가 각광 받고 있다. 본 연구에서는 박막 스위칭 소자 응용을 위해 GeTe 재료를 기반으로 Se을 치환하여 GeSexTe1-x 박막을 제작한 후 소자의 전기적 특성을 평가하였다. GeTe 박막의 결정화 온도는 $187^{\circ}C$였으며 Se을 점진적으로 첨가한 GeSexTe1-x (X=0.2, 0.4, 0.6) 박막의 경우 각각 $213^{\circ}C$, $240^{\circ}C$, $287^{\circ}C$로 측정되었다. 이는 상대적으로 Ge과 Se의 결합에너지가 Ge과 Te의 결합에너지 보다 크기 때문에 Se 함량의 증가에 따라 비정질상의 안정성이 증가된 것으로 판단된다. 비교적 열적 안정성이 높은 3가지의 각각 다른 Se함량을 가진 Ge1.07 Se0.50 Te0.43, Ge1.07 Se0.68 Te0.26, Ge0.95 Se0.90 Te0.15의 소자를 제작하여 스위칭 특성을 분석하였다. GeTe의 경우 전형적인 메모리 스위칭 특성이 나타난 반면 위의 조성을 갖는 박막의 경우 반복적인 문턱 스위칭 특성을 보였다. 이는 Se이 첨가되면서 열적 안정성의 증가로 인해 스위칭이 일어난 후에도 비정질 상을 유지하기 때문이라 판단된다. 각각 제작된 소자에서 인가 전압의 증가와 펄스의 rising time 감소에 따라 더 빠른 스위칭 시간을 보였으며 Se함량이 감소함에 따라 스위칭 전압 또한 감소하는 것을 확인하였다. On 상태의 저항은 Se 함량에 따라 크게 차이가 없었지만 Off 상태의 저항은 Se 함량이 증가됨에 따라 증가되는 것을 확인하였다. 결과적으로 Se 함량에 따른 스위칭 특성의 최적화를 통해 고성능 스위칭 소자에 적용될 수 있을 것이라 판단된다.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.137-141
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• 2005

The CMR properties and magnetic properties of sulphospinels $Zn_xFe_{1-x}Cr_2S_4$ have been explored by X-ray diffraction, magnetoresistance measurement, and $M\ddot{o}ssbauer$ spectroscopy. The crystal structures in the range of x=0.05, 0.1, 0.2 are cubic at room temperature. Magnetoresistance measurement indicates that these system is semiconducting below about 160 K. The temperature of maximum magnetoresistance is almost consistent with Curie temperature. The Zn substitutions for Fe occur to increase the Jahn-Teller relaxation and the electric quadrupole shift. CMR properties could be explained with Jahn-Teller effect, and half-metallic electronic structure, which is different from both the double exchange interactions of manganite La-Ca-Mn-O system and the triple exchange interactions of chalcogenide $Cu_xFe_{1-x}Cr_2S_4$.