• Title/Summary/Keyword: Ceramic-glass

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Characterization of Glass Melts Containing Simulated Low and Intermediate Level Radioactive Waste

  • Jung, Hyun-Su;Kim, Ki-Dong;Lee, Seung-Heon;Kwon, Sung-Ku;Kim, Cheon-Woo;Park, Jong-Kil;Hwang, Tae-Won;Ahn, Zou-Sam
    • Journal of the Korean Ceramic Society
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    • v.43 no.3 s.286
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    • pp.148-151
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    • 2006
  • In order to examine the process parameters for the vitrification of Low and Intermediate Level radioactive Waste (LILW) generated from nuclear power plants, measurements of several melt properties was performed for four selected glasses containing simulated waste. Electrical conductivity and viscosity were determined at temperatures ranging from 1123 to $1673^{\circ}C$. The temperature dependences of both properties in the molten state showed a similar behavior in which their values decrease as the temperature increases. The values of the electrical conductivity and viscosity at a temperature of 1423K adopted in an induction cold crucible melter process were $0.27{\sim}0.42$ S/cm and $9.8{\sim}42$ dPas, respectively.

Fabrication and Characterization of Ferroelectric PFN Thin Film by Sol-Gel Processing (솔-젤법에 의한 강유전성 PFN 박막의 제조 및 특성평가)

  • 류재율;김병호;임대순
    • Journal of the Korean Ceramic Society
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    • v.33 no.6
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    • pp.665-671
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    • 1996
  • Ferroelectric Pb(Fe1/2Nb1/2)O3 thin films were successfully fabricated on ITO/Glass substrate by sol-gel proces-sing and characterized to determine the dielectric and electric properties. Viscosity of PEN sol measured to investigate rheological properties was 3.25 cP which was proper for coating. The sol also showed Newtonian behavior. RTA(Rapid Thermal Annealing) was used for the annealing of the thin film and 1200~1700$\AA$ thick PEN thin films were fabricated by repeating the intermediate and the final annealing. After the deposition of Pt as top electrode by vacuum evaporation dielectric and electric properties were measured. Dielectric properties of FFN thin film were enhanced by increasing the perovskite phase fraction with increasing the annealing temperature. Measured dielectric constant of 1700$\AA$ PFN thin film annealed at $650^{\circ}C$ was 890 at 1kHz Capacitatnce density and dielectric loss were 47 fF/${\mu}{\textrm}{m}$2 and 0.47 respectively. As a result of measuring Curie temperature PFN thin films had Curie point with a rang of 110~12$0^{\circ}C$ and showed broad dielectric peak at that point. Leakage current of the PFN thin films were increased with increasing the annealing tempera-ture.

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THE CONSTRUCTION METHOD OF IN-CERAM ALUMINA 3 UNIT BRIDGE USING CELAY SYSTEM (Celay System을 이용한 In-Ceram Alumina 3 Unit Bridge제작법)

  • Jo, Byung-Woan
    • Journal of the Korean Academy of Esthetic Dentistry
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    • v.5 no.1
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    • pp.34-43
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    • 1996
  • In nowdays many dental CAD/CAM system were developed. Among those only Cerec and Celay were used globally as clinical application. Celay is a machinable ceramic system that is capable of milling inlays, onlays, and veneers from prefabricated industrial ceramic blocks(Vita Celay Blanks). The advatages of Celay are to simplify the manufactures and to save the processing time. For esthetics In-Ceram Alumina bridges were introduced into maxillary anterior restoration. They have a high strength, a high translucency and an excellent marginal adapation. But the laboratory processes are very difficult and complicated. So the construction of In-Ceram Alumina bridge combined with celay system was desgined. The patient is a 28 year old age male. The chief complain is missing of maxillary left central incisor. He wants to restore anterior bridge for esthetically. The Alumina bridge framework was constructed easily by celay system. Glass ilfiltration was occurred. After that, vitadura-${\alpha}$porcelain build up was occurred by conventional method. The translucency of In-Ceram Alumina 3 unit bridge revealed to be superior to that of porcelain fused to metal bridge. So we report it with clincal case and literature reviews.

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Effect of Depositon Variables and Heat-treatment on the Growth Charateristics and Electrical Resistivity of ZnO Thin Film by Sputtering (증착변수 및 열처리 효과가 스퍼터링된 ZnO 박막의 성장 특성 및 전기비저항에 미치는 영향)

  • 하재수;김광호
    • Journal of the Korean Ceramic Society
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    • v.35 no.7
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    • pp.733-739
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    • 1998
  • C-axis oriented zinc oxide thin films were deposited on Cornign 1737 glass substrate by an rf magnetron sputtering technique. The effects of deposition parameters and post heat-treatment on the crystallinity and electical properties of ZnO films were investigaed. As-deposited ZnO films showed the strong c-axis growth and excellent crystallinity under the deposition conditions as follows: substrate temperature 350$^{\circ}C$ ; growth and excellent crystallinity under the deposition conditions as follows ; substrate temperature 350$^{\circ}C$ rf power 75W ; gas pressure 6m Torr; percentage of oxygen 50% The higher heat-treating temperatue was the stronger c-axis growth and the better crystallinity of the deposited ZnO films were. The resistivity of ZnO films was significantly affected by deposition parameters and post heat-treatment. With increasing increased. After post heat-treating at 400$^{\circ}C$ in air the resistivity of ZnO films increased but post heat-treat-ing temperature 500$^{\circ}C$ rather diminished the film resistivity.

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Preparation and Photocatalytic Effect of Brookite Phase TiO2 Colloidal Sol for Thin Film Coating (Brookite TiO2 코팅용 졸의 제조 및 광촉매 효과)

  • Kim, Sun-Jae;Lee, Nam-Hee;Lee, Kang;Choi, Chang-Joo
    • Journal of the Korean Ceramic Society
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    • v.42 no.7 s.278
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    • pp.461-468
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    • 2005
  • Transparent TiO$_{2}$ sols were prepared by hydrothermal synthesis to heat Ti precursor solutions, from Ti hydroxides obtained with neutralizing aqueous TiOCl$_{2}$ solutions having various concentrations of NaCI by aqueous NaOH solution, in the autoclave at 120$^{\circ}C$ The photocatalytic abilities of glass beads coated with the sol for gaseous benzene were evaluated. As a result, it was found that due to the increase of brookite phase in TiO$_{2}$ by controlling the concentration of Na ion the optical absorption of TiO$_{2}$ increases toward long wavelength but that in the area of short wavelength becomes relatively low and consequently the photocatalytic performance of TiO$_{2}$ thin film for benzene gas rather decreases, compared to that of composite film of anatase and brookite phases. These results suggest that in order for coated TiO$_{2}$ thin film to have high dissociation performance for benzene gas it is effective to form anatase and brookite phases compositely in TiO$_{2}$.

Formation of $Al_2O_3$-Ceramics by Reactive Infiltration of Al-alloy into Insulation Fiber Board (Al-합금의 단열섬유판 반응침투에 의한 $Al_2O_3$-세라믹스의 형성)

  • 김일수
    • Journal of the Korean Ceramic Society
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    • v.34 no.5
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    • pp.483-490
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    • 1997
  • Al2O3/metal composites were fabricated by oxidation and reaction of molten Al-alloy into two types of commercial Al2O3-SiO2 fibrous insulation board. The growth rate, composition and microstructure of these materials were described. An AlZnMg(7075) alloy was selected as a parent alloy. Mixed polycrystalline fiber and glass phase fiber were used as a filler. The growth surface of an alloy was covered with and without SiO2. SiO2 powder was employed as a surface dopant to aid initial oxidation of Al-alloy. Al-alloy, SiO2, fiber block and growth inhibitor CaSiO3 were packed sequentially in a alumina crucible and oxidized in air at temperature range 90$0^{\circ}C$ to 120$0^{\circ}C$. The growth rate of composite layer was calculated by measuring the mass increasement(g) per unit surface($\textrm{cm}^2$). XRD and optical microscope were used to investigate the composition and phase of composites. The composite grown at 120$0^{\circ}C$ and with SiO2 dopant showed rapid growth rate. The growth behavior differed a little depending on the types of fiber used. The composites consist of $\alpha$-Al2O3, Al, Si and pore. The composite grown at 100$0^{\circ}C$ exhibited better microstructure compared to that grown at 120$0^{\circ}C$.

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Structural and Electrical Properties of Gallium Doped Zinc Oxide Films

  • Song, Pung-Keun;Yuzo Shigesato;Mika Oguchi;Masayuki Kamei;Itaru Yasui
    • The Korean Journal of Ceramics
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    • v.5 no.4
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    • pp.404-408
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    • 1999
  • Gallium doped zinc oxide(GZO) films were deposited on soda-lime glass substrates without substrate heating $(T_s<50^{\circ}C$) by dc planar magnetron sputtering using GZO ceramic oxide targe with different inert gas (Ar, or Ne). For the GZO films deposited under different total gas pressure $(P_{tot})$, structural and electrical properties were investigated by XRD and Hall effect measurements. Crystallinity of GZO films deposited using Ar was degraded with increase in $(P_{tot})$, suggesting that it was heavily affected by kinetic energy of sputtered Zn particles$(PA_{zn})$ arriving at substrate surface. Whereas, crystallinity of GZO films deposited at lower Ptot than 3.0 Pa using Ne gas was degraded with decrease in $(P_{tot})$. This degradation was considered to be result of film damage caused by the bombardment of high-energy neutrals ($Ne^{\circ}$). On the basis of a hard sphere collision processes, the average final energy of particles (sputtered Zn, $Ar^{\circ}$and $Ne^{\circ}$)arriving at substrate surface were estimated.

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Effect of processing Conditions on $3,400cm^{-1}$ -OH Peak in IR Transmitting Heavy Metal Fluoride Glasses (적외선 투과성 플루오르화 중금속 유리의 $3,400cm^{-1}$ -OH 흡수에 미치는 가공조건의 영향)

  • ;C. T Moynihan
    • Journal of the Korean Ceramic Society
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    • v.21 no.3
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    • pp.231-238
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    • 1984
  • Heavy metal fluoride glasses exhibit considerable promise as high transparency materials from the UV to the IR. These glasses are prepared by fusion of the mixture of metal fulorides($ZrF_4$, $BaF_2$, $LaF_3$ etc) at 800-1, 00$0^{\circ}C$ under the inert$(N_2)$ or reactive ($CCl_4$, $Cl_2$) atmosphere following the casting into glass on cooling. Infrared absorption at the 3, 400 cm-1 -OH peak has been measured as a function of thickness for several ZrF-$BaF_2$-LaF and $HfF_4$-$BaF_2$-$LaF_3$ glasses to separate contributions from bulk and surface -OH. For glasses melted under $CCl_4$ reactive atmosphere the peak is due almost entirely to surface-OH. and melting in a closed reactor was best for removing -OH. In ambient atmosphere the -OH peak exhibited no time dependence over a 30 d period indicating a very small rate of surface attack by atmospheric H2O. Removal of -OH absorption processing was generally easier and more complete for the $BaF_2$/ThF4-glasses than for the $ZrF_4$-or $HfF_4$-based glasses.

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Comparison of the marginal fit of POM restorations with different thickness of metal copings (코핑 두께의 차이에 따른 POM 보철물의 변연적합도 연구)

  • Lim, Hyung-Tek
    • Journal of Technologic Dentistry
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    • v.34 no.2
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    • pp.135-143
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    • 2012
  • Purpose: The purpose of this in vitro study was to compare the marginal fit of POM restorations with 3 different thickness of metal coping. Methods: 2.0mm Occlusal reduction, 1.0mm preparation of axial wall with 6degree taper, and chamfer margin was prepared a maxillary first premolar on dentiform. Duplicate prepared die and, make 30 individual dies with Ni-Cr metal. Make 3 groups of 30 press ceramic on Metal crown with different thickness of metal coping; 10 of 0.1mm, 10 of 0.3mm, 10 of 0.5mm thickness metal coping. The marginal fit of the crowns was evaluated 50 points per 1 crown, around the crown margin circumference under a optical microscope at original magnification ${\times}100$. A 1-way analysis of variance (ANOVA) was used to compare data. Results: The mean marginal discrepancy for POM with 0.1mm metal copings was $72.56{\mu}m$, $67.83{\mu}m$ for 0.3mm metal coping POMs, and $72.56{\mu}m$ for 0.5mm metal coping POM. The 1-way ANOVA showed significant difference among 3 groups. Conclusion: The marginal fit of pressed-on-metal (POMs) was best with 0.3mm thickness of metal coping, fallowing by 0.1mm, and 0.5mm in the order.

Preparation of Ferroelectric PZT Thin Film by Sol-Gel Processing; (III) Effect of Rapid Thermal Annealing on Microstructures and Dielectric Properties (솔-젤법에 의한 강유전성 PZT 박막의 제조;(III) 급속열처리방법이 미세구조 및 유전특성에 미치는 영향)

  • 김병호;박성호;김병호
    • Journal of the Korean Ceramic Society
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    • v.32 no.8
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    • pp.881-892
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    • 1995
  • Sol-Gel derived ferroelectric PZT thin films were fabricated on ITO/Glass substrate. Two kinds of rapid thermal annealing methods, R-I (six times of intermediate and final annealing) and R-II (one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. 2500$\AA$-thick PZT thin films were obtained by the R-I and R-II methods and characterized by microstructure and dielectric properties. In case of using R-II, the microstructure was finer than that of R-I and there was no distinguishable difference in dielectric properties of PZT thin films between the R-I and R-II methods. But dielectric properties were enhanced by increasing perovskite phase fraction with increasing annealing temperature. Measured dielectric constant of PZT thin film annealed at 62$0^{\circ}C$ using the R-I method was 256 at 1kHz. Its remanant polarization (Pr) and coercive field (Ec) were 14.4$\mu$C/$\textrm{cm}^2$ and 64kV/cm, respectively.

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