• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2002.05a
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• pp.23-28
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• 2002

This paper describes the machining characteristics of the $MoSi_2$ based composites by electric discharge drilling with various tubular electrodes, besides, Hardness characteristics and microstructures of $Nb/MoSi_2$ laminate composites were evaluated from the variation of fabricating conditions such as preparation temperature, applied pressure and pressure holding time. $MoSi_2$ -based composites has been developed in new materials for jet engine of supersonic-speed airplanes and gas turbine for high- temperature generator. Achieving this objective may require new hard materials with high strength and high temperature-resistance. However, With the exception of grinding, traditional machining methods are not applicable to these new materials. Electric discharge machining (EDM) is a thermal process that utilizes a spark discharge to melt a conductive material, the tool electrode being almost non-unloaded, because there is no direct contact between the tool electrode and the workpiece. By combining a nonconducting ceramics with more conducting ceramic it was possible to raise the electrical conductivity. From experimental results, it was found that the lamination from Nb sheet and $MoSi_2$ powder was an excellent strategy to improve hardness characteristics of monolithic $MoSi_2$. However, interfacial reaction products like (Nb, Mo)$SiO_2$ and $Nb_2Si_3$ formed at the interface of $Nb/MoSi_2$ and increased with fabricating temperature. $MoSi_2$ composites which a hole drilling was not possible by the conventional machining process, enhanced the capacity of ED-drilling by adding $NbSi_2$ relative to that of SiC or $ZrO_2$ reinforcements.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.