• Title/Summary/Keyword: Ceramic oxides

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Electrical and Chemical Properties of ultra thin RT-MOCVD Deposited Ti-doped $Ta_2O_5$

  • Lee, S. J.;H. F. Luan;A. Mao;T. S. Jeon;Lee, C. h.;Y. Senzaki;D. Roberts;D. L. Kwong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.4
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    • pp.202-208
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    • 2001
  • In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

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Feasibility Study on Vitrification for Rare Earth Wastes of PyroGreen Process (파이로그린공정 희토류폐기물 유리화 타당성 연구)

  • Kim, Cheon-Woo;Lee, Byeong Gwan
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.11 no.1
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    • pp.1-9
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    • 2013
  • The rare earth oxide wastes consisting of major 8 nuclides Y, La, Ce, Pr, Nd, Sm, Eu and Gd, are generated during the salt waste treatment of PyroGreen process. The final form of the rare earth is generated as the oxide state. In this study, six candidate glasses were developed to evaluate the feasibility for vitrifying the rare earth oxide wastes within the borosilicate glass system. The solubilities of the mixture of the rare earth oxide waste showed less than 25wt% at $1,200^{\circ}C$, less than 30wt% at $1,300^{\circ}C$, respectively. It means that solubility is increased with the temperature increment. The liquidus temperature of the homogeneous glass with 20wt% waste loading was determined as less than $950^{\circ}C$. In more than solubility of rare earth oxides glass, formation of rare earth-oxide-silicate crystal in glass-ceramic occurred as the secondary phase. As their viscosity at melting temperature $1,200{\sim}1,300^{\circ}C$ was less than 100 poise, electrical conductivity was higher than 1 S/cm, 20~25wt% waste loading glasses with good surface homogeneity are judged to have good operability in cold crucible induction melter. Other physicochemical properties of the developed glasses are going to be experimented in the future.

A Study on the Ceramic and Clay Mineral Resources and its Genesis in Cheonnam Province and Hadong Area (전남(全南)과 하동지역(河東地域)에서 산출(産出)하는 요업(窯業) 및 점토(粘土) 광물자원(鑛物資源)과 성인(成因)에 관(關)한 연구(硏究))

  • Park, Hong Bong;Park, Bae Young;Shin, Sang Eun;Huh, Min
    • Economic and Environmental Geology
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    • v.21 no.1
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    • pp.1-15
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    • 1988
  • This is a study on the mineral compositions, SK numbers of refractoriness and the genesis of the clay mineral deposits in Cheonnam Province and Handong area. 1. Jindo kaolin deposits: Chief clay minerals of the deposits are kaolinite, quartz and alunite. The SK number of the ore is from $34^+$(the highest) to 27(the lowest). On the genesis of the deposits some geologists believe that the deposits were formed by the alteration of the siliceous tuff. But the deposits seems to be formed by the hydrothermal alteration of the rhyolite lava beds. This area is formed by alternative beds of tuff; and kaoline deposits. 2. Hadong area: Chief mineralogy of Hadong kaolin area is $10{\AA}$ halloysite and kaolinite. The SK number of some of the ore is up to $36^+$. The theoretic SK number of kaolinitic composition is 35. So one of the highest alumina minerals of gibbsite is formed in the ores of $36^+$ SK numbers. 3. Hampyong kaolin deposits: Most of kaolin has black color. The chief minerals are kaolinite, quartz and muscovite. Some of the kaoline contains rutile crystals. SK number ranges from 30 to 17. The kaolin deposit is formed by the transported sedimentation in lower part of the seashore. 4. Jangsan kaoline deposits: Chief minerals of the kaolin is kaolinite, quartz and muscovite. Some kaoline contains small crystals of pyrite. This area consists almost of the tuffs. Kaolin deposits also would be formed by the alteration of the tuffs. 5. Nohwado pyrophyllite deposits: Quartz and pyrophyllite are chief minerals. SK number of the ore ranges from 32 to 30. The pyrophyllite deposits would be formed by the hydrothermal alteration of the rhyolitic lava beds. This area consists of alterative beds of tuffs and rhyolitic lavas. 6. Songsuk pyrophyllite deposits: Chief minerals are quartz, kaolinite, pyrophyllite and iron oxides. In the pyrophyllite deposits egg-like inclusions of diaspore and kaolinite in composition. This area almost consists of tuffs. Several faults are developed and along the fault the tuff would begin to alter to pyrophyllite and some parts to diaspore and kaolinite nodules by the acts of hydrothermal solution.

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Structural and Electrical Properties of Fluorine-doped Zinc Tin Oxide Thin Films Prepared by Radio-Frequency Magnetron Sputtering

  • Pandey, Rina;Cho, Se Hee;Hwang, Do Kyung;Choi, Won Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.335-335
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    • 2014
  • Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

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Visible Light Driven ZnFe2Ta2O9 Catalyzed Decomposition of H2S for Solar Hydrogen Production

  • Subramanian, Esakkiappan;Baeg, Jin-Ook;Kale, Bharat B.;Lee, Sang-Mi;Moon, Sang-Jin;Kong, Ki-Jeong
    • Bulletin of the Korean Chemical Society
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    • v.28 no.11
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    • pp.2089-2092
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    • 2007
  • Tantalum-containing metal oxides, well known for their efficiency in water splitting and H2 production, have never been used in visible light driven photodecomposition of H2S and H2 production. The present work is an attempt in this direction and investigates their efficiency. A mixed metal oxide, ZnFe2Ta2O9, with the inclusion of Fe2O3 to impart color, was prepared by the conventional ceramic route in single- and double-calcinations (represented as ZnFe2Ta2O9-SC and ZnFe2Ta2O9-DC respectively). The XRD characterization shows that both have identical patterns and reveals tetragonal structure to a major extent and a minor contribution of orthorhombic crystalline system. The UV-visible diffuse reflection spectra demonstrate the intense, coherent and wide absorption of visible light by both the catalysts, with absorption edge at 650 nm, giving rise to a band gap of 1.9 eV. Between the two catalysts, however, ZnFe2Ta2O9-DC has greater absorption in almost the entire wavelength region, which accounts for its strong brown coloration than ZnFe2Ta2O9-SC when viewed by the naked eye. In photocatalysis, both catalysts decompose H2S under visible light irradiation (λ ≥ 420 nm) and produce solar H2 at a much higher rate than previously reported catalysts. Nevertheless, ZnFe2Ta2O9-DC distinguishes itself from ZnFe2Ta2O9-SC by exhibiting a higher efficiency because of its greater light absorption. Altogether, the tantalum-containing mixed metal oxide proves its efficient catalytic role in H2S decomposition and H2 production process also.