• KSII Transactions on Internet and Information Systems (TIIS)
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• 제6권7호
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• pp.1815-1830
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• 2012

Existing R-tree that is based on a variety of outdoor-based techniques to manage moving objects have been investigated. Due to the different characteristics of the indoor and outdoor, it is difficult to management of moving object using existed methods in indoor setting. We propose a new index structure called ACII(adaptive Cell-based index for Indoor moving objects) for Indoor moving objects. ACII is Cell-based access structure adopting an overlapping technique. The ACII refines cells adaptively to handle indoor regional data, which may change its locations over time. The ACII consumed at most 30% of the space required by R-tree based methods, and achieved higher query performance compared with r-tree based methods.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.69-70
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• 2006

A detailed Investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Sb-Te material for phase-change cell. A novel bottom electrode structure and manufacture are described. We used heat radiator structure for improved reset characteristic. A resistance change measurement is performed on the test chip. From the resistance change, we could observe faster reset characteristic.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권3호
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• pp.268-273
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• 2014

The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects. To the best of our knowledge, our bipolar RRAM model is applicable to realistic cell structure optimization because our model is based on the FE method (FEM) unlike precedent models.

• 대한전자공학회논문지SD
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• 제42권10호
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• pp.1-8
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• 2005

본 논문에서는 강유전체 메모리의 셀 효율을 높이기 위해 PMOS-gating 셀을 이용한 설계기법을 기술하였다. PMOS-gating 셀은 PMOS access 트랜지스터와 강유전체 커패시터로 이루어지며 커패시터의 플레이트는 ground에 고정된다. 아울러 read/write 동작시 비트라인이 $V_{DD}$로 precharge 되고, negative 전압 워드라인 기법이 사용되며, negative 펄스 restore 동작을 이용한다. 이는 셀 플레이트 구동없이 단순히 워드라인과 비트라인만 구동하여 메모리 셀의 데이타를 저장하고 읽어낼 수 있는 설계 방식으로, 기존의 셀 플레이트를 구동하는 FRAM 대비 메모리 셀 효율을 극대화 할 수 있어, multi-megabit 이상의 집적도에서 경쟁력 있는 칩 면적 구현이 가능하다. $0.25-{\mu}m$ triple-well 공정을 적용한 2.5-V, 1-Mb FRAM 시제품 설계를 통해 제안한 설계기술을 검증하였고, 시뮬레이션 결과 48 ns의 access time, 11 mA의 동작전류 특성을 보였다. 레이아웃 결과 칩 면적은 $3.22\;mm^{2}$ 이며, 기존의 셀 플레이트 구동기를 사용하는 FRAM 대비 약 $20\;\%$의 셀 효율을 개선하였다.

• Journal of Communications and Networks
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• 제7권2호
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• pp.115-125
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• 2005

This paper discusses how to effectively design a next-generation wireless communication system that can possibly provide very high data-rate transmissions and versatile quality services. In order to accommodate the sophisticated user requirements and diversified user environments of the next-generation systems, it should be designed to take an efficient and flexible structure for multiple access and resource allocation. In addition, the design should be optimized for cost-effective usage of resources and for efficient operation in a multi-cell environment. As orthogonal frequency division multiple access (OFDMA) has turned out in recent researches to be one of the most promising multiple access techniques that can possibly meet all those requirements through efficient radio spectrum utilization, we take OFDMA as the basic framework in the next-generation wireless communications system design. So, in this paper, we focus on introducing an OFDMA-based downlink system design that employs the techniques of hybrid multiple access (HMA) and frequency group (FG) in conjunction with intra-frequency group averaging (IFGA). The HMA technique combines various multiple access schemes on the basis of OFDMA system, adopting the multiple access scheme that best fits to the given user condition in terms of mobility, service, and environment. The FG concept and IFGA technique help to reduce the feedback overhead of OFDMA system and the other-cell interference (OCI) problem by grouping the sub-carriers based on coherence band-widths and by harmonizing the channel condition and OCI of the grouped sub-carriers.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.863-866
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• 2003

Recently, there has been growing interests in the magneto-resistive random access memory (MRAM) because of its great potential as a future nonvolatile memory. In this paper, a CMOS macro-model for MRAM cell based on a twin cell structure is proposed. The READ and WRITE operations of the MTJ cell can be emulated by adopting data latch and switch blocks. The behavior of the circuit is confirmed by HSPICE simulations in a 0.35-${\mu}{\textrm}{m}$ CMOS process. We expect the macro model can be utilized to develope the core architecture and the peripheral circuitry. It can also be used for the characterization and the direction of the real MTJ cells.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권4호
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• pp.205-210
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• 2003

A 3-Transistor cell CMOS OTP ROM array using standard CMOS antifuse (AF) based on permanent breakdown of MOSFET gate oxide is proposed, fabricated and characterized. The proposed 3-T OTP cell for ROM array is composed of an nMOS AF, a high voltage (HV) blocking nMOS, and cell access transistor, all compatible with standard CMOS technology. The experimental results show that the proposed structure can be a viable technology option as a high density OTP ROM array for modern digital as well as analog circuits.

• 인터넷정보학회논문지
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• 제11권3호
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• pp.43-51
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• 2010

본 논문에서는OFDMA-TDD 구조를 갖는 IEEE802.16j 기반의 2-홉 셀룰러 중계시스템에서 non-transparent 방식의 무선 중계기를 이용하여 서비스 영역을 확장할 때, 시스템 전송률 및 하향링크 접근영역(Access zone)과 중계영역(Relay zone)에 대한 최적 무선자원 할당방법을 연구한다. 분석을 위해 먼저 non-transparent 방식의 MAC (Media Access Control) 프레임 구조를 알아보고, 접근영역과 중계영역에서 단말과 중계기 등의 네트워크 구성요소들에 대한 간섭요소들을 조사한다. 모의실험을 통하여 기지국과 중계기의 거리에 따라 확장되는 2-홉 셀 커버리지 크기와 전송률을 분석하고, 분석된 결과를 이용하여 하향링크 접근영역과 중계영역에 대한 최적 무선자원 할당량을 제시한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.106-107
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• 2007

A detailed investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Se-Te material for phase-change cell. Actually, the performance properties have been improved surprisingly then conventional Ge-Sb-Te. However, crystallization time was as long as ever for amorphization time. We conducted this experiment in order to solve that problem by doping-Sb with annealing.

• Advances in nano research
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• 제15권6호
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• pp.521-531
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• 2023

Quantum-dot cellular automata (QCA) has shown great potential in the nanoscale regime as a replacement for CMOS technology. This work presents a specific approach to static random-access memory (SRAM) cell based on 2:1 multiplexer, 4-bit SRAM array, and 32-bit SRAM array in QCA. By utilizing the proposed SRAM array, a single-layer 16×32-bit SRAM with the read/write capability is presented using an optimized signal distribution network (SDN) crossover technique. In the present study, an extremely-optimized 2:1 multiplexer is proposed, which is used to implement an extremely-optimized SRAM cell. The results of simulation show the superiority of the proposed 2:1 multiplexer and SRAM cell. This study also provides a more efficient and accurate method for calculating QCA costs. The proposed extremely-optimized SRAM cell and SRAM arrays are advantageous in terms of complexity, delay, area, and QCA cost parameters in comparison with previous designs in QCA, CMOS, and FinFET technologies. Moreover, compared to previous designs in QCA and FinFET technologies, the proposed structure saves total energy consisting of overall energy consumption, switching energy dissipation, and leakage energy dissipation. The energy and structural analyses of the proposed scheme are performed in QCAPro and QCADesigner 2.0.3 tools. According to the simulation results and comparison with previous high-quality studies based on QCA and FinFET design approaches, the proposed SRAM reduces the overall energy consumption by 25%, occupies 33% smaller area, and requires 15% fewer cells. Moreover, the QCA cost is reduced by 35% compared to outstanding designs in the literature.