• 한국초전도학회:학술대회논문집
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• v.15
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• pp.71-71
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• 2005

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.12
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• pp.8-13
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• 2001

Cerium oxide ($CeO_2$) thin film has been proposed as a buffer layer between the ferroelectric thin film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS) structures for ferroelectric random access memory (FRAM) applications. In this study, $CeO_2$ thin films were etched with $Cl_2$/Ar gas mixture in an inductively coupled plasma (ICP). Etch properties were measured for different gas mixing ratio of $Cl_2$($Cl_2$+Ar) while the other process conditions were fixed at RF power (600 W), dc bias voltage (-200 V), and chamber pressure (15 mTorr). The highest etch rate of $CeO_2$ thin film was 230 ${\AA}$/min and the selectivity of $CeO_2$ to $YMnO_3$ was 1.83 at $Cl_2$($Cl_2$+Ar gas mixing ratio of 0.2. The surface reaction of the etched $CeO_2$ thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is a Ce-Cl bonding by chemical reaction between Ce and Cl. The results of secondary ion mass spectrometer (SIMS) analysis were compared with the results of XPS analysis and the Ce-Cl bonding was monitored at 176.15 (a.m.u). These results confirm that Ce atoms of $CeO_2$ thin films react with chlorine and a compound such as CeCl remains on the surface of etched $CeO_2$ thin films. These products can be removed by Ar ion bombardment.

• Progress in Superconductivity and Cryogenics
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• v.11 no.4
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• pp.20-24
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• 2009

YBCO coated conductors (CC) on the $CeO_2$-buffered IBAD-MgO template were fabricated by metal-organic deposition (MOD) Process with Ba-trifluoroacetate and fluorine-free Y and Cu precursor materials. The precursor solution was coated on $CeO_2$-buffered IBAD MgO templates using the multiple dip-coating method, decomposed into inorganic precursors by pyrolysis up to $400^{\circ}C$ within 3 h, and finally fired at $740{\sim}800^{\circ}C$ in a reduced oxygen atmosphere. Microstructure, texture, and superconducting properties of YBCO films were found highly sensitive to both the firing temperature and time. The high critical current density ($J_C$) of $1.15\;MA/cm^2$ at 77.3K in the self-field could be obtained from $1\;{\mu}m$ thick YBCO CC, fired at $740^{\circ}C$ for 3.5 h, implying that high performance YBCO CC is producible on IBAD MgO template. Further enhancement of $J_C$ values is expected by improving the in-plane texture of $CeO_2$-buffer layer and avoiding the metal substrate contamination.

• Journal of the Korean Ceramic Society
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• v.44 no.12
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• pp.727-732
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• 2007

In order to fabricate a highly performing cathode for low-temperature type solid oxide fuel cells working at below $700^{\circ}C$, electrode microstructure control and electrode polarization measurement were performed with an electronic conductor, $La_{0.8}Sr_{0.2}MnO_3$ (LSM) and a mixed conductor, $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_3$(LSCF). For both cathode materials, when $Sm_{0.2}Ce_{0.8}O_2$ (SDC) buffer layer was formed between the cathode and yttria-stabilized zirconia (YSZ) electrolyte, interfacial reaction products were effectively prevented at the high temperature of cathode sintering and the electrode polarization was also reduced. Moreover, cathode polarization was greatly reduced by applying the SDC sol-gel coating on the cathode pore surface, which can increase triple phase boundary from the electrolyte interface to the electrode surface. For the LSCF cathode with the SDC buffer layer and modified by the SDC sol-gel coating on the cathode pore surface, the cathode resistance was as low as 0.11 ${\Omega}{\cdot}cm^2$ measured at $700^{\circ}C$ in air atmosphere.

• Journal of the Korean Ceramic Society
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• v.43 no.6 s.289
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• pp.369-375
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• 2006

[ $(Ba_{0.5}Sr_{0.5})_{0.99}Co_{x}Fe_{1-x}O_{3-{\delta}}$ ] [x=0.8, 0.2](BSCF) powders were synthesized by a Glycine-Nitrate Process (GNP) and the electrochemical performance of the BSCF cathode on a scandia stabilized zirconia, $[(Sc_{2}O_3)_{0.11}(ZrO_2)_{0.89}]-1Al_{2}O_3$ was investigated. In order to prevent unfavorable solid-state reactions between the cathode and zirconia electrolyte, a GDC ($Gd_{0.1}Ce_{0.9}O_{2-{delta}}$) buffer layer was applied on ScSZ. The BSCF (x = 0.8) cathode formed on GDC(Buffer)/ScSZ(Disk) showed poor electrochemical property, because the BSCF cathode layer peeled off after the heat-treatment. On the other hand, there were no delamination or peel off between the BSCF and GDC buffer layer, and the BSCF (x = 0.2) cathode exhibited fairly good electrochemical performances. It was considered that the observed phenomenon was associated with the thermal expansion mismatch between the cathode and buffer layer. The ohmic resistance of the double layer cathode was slightly lower than that of the single layer BSCF cathode due to the incorporation of platinum particle into the BSCF second layer.

• Progress in Superconductivity and Cryogenics
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• v.5 no.3
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• pp.11-14
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• 2003

The detailed conditions of dc-sputtering for depositions of yttria-stabilized ZrO$_2$ (YSZ) films were investigated, while the films were grown on the CeO$_2$ template layers on biaxially textured Ni-tapes. The window of oxygen pressures for proper growth of YSZ films, which was dependent on sputtering powers, was determined by sufficient oxidations of the YSZ films and the de-oxidation of the target surface, which was required for rapid sputtering. The window turned out to be fairly wide under certain values of argon pressure. When the sputtering power was raised, the deposition rate increased without narrowing the window. The fabricated YSZ films showed good texture qualities and surface morphologies.

• Journal of the Korean Ceramic Society
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• v.44 no.12
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• pp.710-714
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• 2007

LSGM$(La_{0.8}Sr_{0.2}Ga_{0.8}Mg_{0.2}O_{3-{\delta}})$ is the very promising electrolyte material for lower-temperature operation of SOFCs, especially when realized in anode-supported cells. But it is notorious for reacting with other cell components and resulting in the highly resistive reaction phases detrimental to cell performance. LDC$(La_{0.4}Ce_{0.6}O_{1.8})$, which is known to keep the interfacial stability between LSGM electrolyte and anode, was adopted in the anode-supported cell, and its effect on the interfacial reactivity and electrochemical performance of the cell was investigated. No severe interfacial reaction and corresponding resistive secondary phase was found in the cell with LDC buffer layer, and this is due to its ability to sustain the La chemical potential in LSGM. The cell exhibited the open circuit voltage of 0.64V, the maximum power density of 223 $mW/cm^2$, and the ohmic resistance of $0.17{\Omega}cm^2$ at $700^{\circ}C$. These values were much improved compared with those from the cell without any buffer layer, which implies that formation of the resistive reaction phases in LSGM and then deterioration of the cell performance is resulted mainly from the La diffusion from LSGM electrolyte to anode.

• 한국초전도학회:학술대회논문집
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• v.12
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• pp.84-84
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• 2002

• Journal of the Korean Ceramic Society
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• v.42 no.12 s.283
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• pp.787-792
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• 2005

A symmetrical LSCF $(La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta})\;ScSZ(89ZrO_2-10Sc_2O_3-1CeO_2)/LSCF$ electrochemical cell with a GDC (Gadolinium-Doped Ceria, $90CeO_2-10Gd_2O_3$) interlayer that was inserted between the LSCF cathode and ScSZ electrolyte was fabricated, and the electrochemical performance of these cells was evaluated. The GDC interlayer was deposited on a ScSZ electrolyte using a screen-printing technique. The GDC interlayer prevented the unfavorable solid-state reactions at the LSCF/ScSZ interfaces. The LSCF cathode on the GDC interlayer had excellent electrocatalytic performance even at $650^{\circ}C$. The Area Specific Resistance (ASR) was strongly dependent on the thickness and heat-treatment temperature of the GDC interlayer. The impedance spectra showed that the cell with a $15\~27{\mu}m$ thick GDC interlayer heat-treated at $1200^{\circ}C$ had the lowest ASR.

• Progress in Superconductivity
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• v.8 no.2
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• pp.175-180
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• 2007

High temperature superconductor $YBa_2Cu_3O_{7-x}$ (YBCO) films have been grown by in-situ electron beam evaporation on artificial metal tapes such as ion-beam assisted deposition (IBAD) and rolling assisted biaxially textured substrates (RABiTS). Deposition rate of the YBCO films is $10{\sim}100{\AA}/sec$. X-ray diffraction shows that the films are grown epitaxially but have inter-diffusion phases, like as $BaZrO_3\;or\;BaCeO_3$, at their interfaces between YBCO and yttrium-stabilized zirconia (YSZ) or $CeO_2$, respectively. Secondary ion mass spectroscopy depth profile of the films confirms diffused region between YBCO and the buffer layers, indicating that the growth temperature ($850{\sim}900^{\circ}C$) is high enough to cause diffusion of Zr and Ba. The films on both the substrates show four-fold symmetry of in-plane alignment but their width in the -scan is around $12{\sim}15^{\circ}$. Transmission electron microscopy shows an interesting interface layer of epitaxial CuO between YBCO and YSZ, of which growth origin may be related to liquid flukes of Ba-Cu-O. Resistivity vs temperature curves of the films on both substrates were measured. Resistivity at room temperature is between 300 and 500 cm, the extrapolated value of resistivity at 0 K is nearly zero, and superconducting transition temperature is $85{\sim}90K$. However, critical current density of the films is very low, ${\sim}10^3A/cm^2$. Cracking of the grains and high-growth-temperature induced reaction between YBCO and buffer layers are possible reasons for this low critical current density.