• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.51-56
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• 2001

$CeO_2$ thin films as insulator for MFISFET (Metal-ferroelectric-insulator- semiconductor-field effect transistor) were deposited by r.f. magnetron sputtering. Ar and $O_2$ gas as the deposition gas were used and the effects of oxygen partial pressure during sputtering on texture and electrical properties of $CeO_2$ thin films were evaluated. All $CeO_2$ thin films deposited on p-type Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The films deposited with only Ar gas among various condition had highest preferred orientation but show large hysteresis characteristics in capacitance-voltage measurement due to relatively many charged paricles and roughness. Films show smooth surface state and good C-V characteristics with increasing oxygen partial pressure. It was thought that this trend in C-V characteristics was due to the amount of mobile ionic charge within $CeO_2$ films. The composition of films show oxygen excess, that is, O/$Ce_2$ ratio of films was 2.22~2.42 range and leakage current of films show $10^{-7}~10^{-8}A$order at 100 kV/cm.

• Clean Technology
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• v.21 no.3
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• pp.200-206
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• 2015

In order to investigate the effect of cerium oxide addition, Cu-ZnO-CeO₂ catalysts were prepared using co-precipitation method for water gas shift (WGS) reaction. A series of Cu-ZnO-CeO₂ catalyst with fixed Cu Content (50 wt%, calculated as CuO) and a given ceria content (e.g., 0, 5, 10, 20, 30, 40 wt%, calculated as CeO₂) were tested for catalytic activity at a GHSV of 95,541 h^-1, and a temperature range of 200 to 400 ℃. Cu-ZnO-CeO₂ catalysts were characterized by using BET, SEM, XRD, H₂-TPR, and XPS analysis. Varying composition of Cu-ZnO-CeO₂ catlysts led the difference characteristics such as Cu dispersion, and binding energy. The optimum 10 wt% doping of cerium facilitated catalyst reduction at lower temperature and improved the catalyst performance greatly in terms of CO conversion. Cerium oxide added catalyst showed enhanced activities at higher temperature when it compared with the catalyst without cerium oxide. Consequently, ceria addition of optimal composition leads to enhanced catalytic activity which is attributed to enhanced Cu dispersion, lower binding energy, and hindered Cu metal agglomeration.

• Korean Journal of Materials Research
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• v.2 no.3
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• pp.202-206
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• 1992

The $CeO_2$-added Y-Ba-Cu-O oxides were prepared by the partial melt process involving the peritectic reaction, liquid + 2-1-1 phase ${\rightarrow}$ 1-2-3 phase, to investigate the effect of the dopant on microstructure and superconductivity. During the peritec reaction, all the added $CeO_2$ was converted to $BaCeO_3$ particles which were finely dispersed in large 1-2-3 grains. Superconducting transition temperature($T_{c}R=0$ point) of the partial-melted samples was as high as 90K regardless of $CeO_2$ content up to 5wt%, which is owing to the separation of the second phase from the 1-2-3 superconducting phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.590-594
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• 2004

In this study, lead-free piezoelectric ceramics were investigated for pressure sensor applications as a function of the amount of $CeO_2$ addition at Bi(Na,K)$TiO_3-SrTiO_3$ system. With increasing the amount of $CeO_2$ addition, the density and dielectric constant increased. Electromechanical coupling factor($k_p$) showed the maximum value(kp, 0.39) at 0.1wt% $CeO_2$ addition and decreased above 0.1wt% $CeO_2$ addition., Density, dielectric constant(${\varepsilon}_r$) increased but mechanical quality factor(Qm), piezoelectric constant(d33) decreased in $CeO_2$ addition, respectively.

• Applied Chemistry for Engineering
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• v.24 no.5
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• pp.494-498
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• 2013

In this study, selective catalytic oxidation (SCO) of $NH_3$ using $Ce/TiO_2$ catalyst was examined to control the slipped NH3 from various pollutants. It was found that the catalytic activity increased with increasing the Ce loadings till reaching 10 wt% Ce loading. However, when Ce loaded over 10 wt%, the activity of catalysts rather decreased than that of catalysts, below 10 wt% Ce. Therefore, the composition of $Ce/TiO_2$ catalyst optimized in this study can be applied to industrial fields.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.807-811
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• 2000

CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.56-60
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• 2000

Cube texture를 갖는 Ni기판위에 MOCVD(Metal Chemical Vapor Deposition)를 이용하여 NiO, CeO$_2$, YBCO 박막을 제조하였다. NiO(200)와 CeO$_2$(200) buffer layer는 450${\sim}$470$^{\circ}$C에서 10분간 MOCVD방법으로 (100)<001>Ni 기판위에 직접 증착하였다. 제조된 NiO, CeO$_2$ buffer layer는 조직이 치밀하며 표면의 상태가 매우 좋으며 Ni기판 위에 epitaxial하게 성장하였다. NiO는 Ni기판과 NiO<100>//Ni<100>의 방위관계를 가지고 성장하였으며, CeO$_2$는 증착조건에 따라 CeO$_2$ <100>//Ni<100> 및 CeO$_2$ <110>//Ni<100> 의 방위관계를 가지고 성장하였다. 증착된 NiO막과 CeO$_2$막에서 균열은 발생하지 않았다. MOCVD법으로 표면에 biaxial texture를 갖는 ceramic buffer를 증착시킨 NiO/Ni및 CeO$_2$/Ni 기판위에 YBCO박막을 MOCVD법으로 제조하였다. YBCO막은 기판온도 800$^{\circ}$C,증착압력 10torr, 산소분압을 0.7torr로 하여 10분간 행하였다. 공급원료의 조성에 따라 YBCO의 막의 texture와 형성되는 상이 변화되었다. NiO/Ni및 CeO$_2$/Ni 기판 위에 증착된 YBCO막은 c축 배향성을 가지고 성장하였으며, -scan 및 ${\varphi}$ -scan으로 측정한 (500)면의 in-plane과 (110)면의 out-of-plane의 FWHM(Full Width Half Maximum)값은 각각 10$^{\circ}$ 미만으로 우수하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.217-220
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• 2001

The possibility of cerium dioxide $(CeO_2)$ thin films as insulators of metal erroelectric insulator semiconductor (MFIS) structures have been studied. The etching $CeO_2$ thin films have been perfonned in an inductively coupled $Cl_{2}/CF_{4}/Ar$ plasma. The high etch rate of the $CeO_2$ thin film was $250\AA /m$ at a 10 % addition of $Cl_2$ into the $Ar(80)/CF_{4}(20)$. The surface reaction of the etched $CeO_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS) analysis. There are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. These products can be removed by the physical bombardment of incident Ar ions.

• Clean Technology
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• v.29 no.4
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• pp.313-320
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• 2023

In order to increase the usability of H₂-SCR, the NOx removal characteristics with catalyst powder of PtNi/CeO₂-W-TiO₂ using Ce as a co-catalyst was synthesized and coated on a porous metal structure (PMS) were evaluated. Catalyst powder of PtNi/CeO₂-W-TiO₂(PtNi nanoparticles onto W-TiO₂, with the incorporation of ceria (CeO₂) as a co-catalysts) was synthesized and coated onto a porous metal structure (PMS) to produce a Selective Catalytic Reduction (SCR) catalyst. H₂-SCR with CeO₂ as a co-catalyst exhibited higher NOx removal efficiency compared to H₂-SCR without CeO₂. Particularly, at a 10wt% CeO₂ loading ratio, the NOx removal efficiency was highest at 90℃. As the amount of catalyst coating on PMS increased, the NOx removal efficiency was improved below 90℃, but it was decreased above 120℃. When the space velocity was changed from 4,000 h^-1 to 20,000 h^-1, the NOx removal efficiency improved at temperatures above 120℃. It was expected that the use of the catalyst could be reduced by applying the PMS with excellent specific surface area as a support.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.186-189
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• 2003

The MFIS capacitors were fabricated using a metalorganic decomposition method. Thin layers of $ZrO_2$ and $CeO_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X -ray diffraction was used to determine the phase of the BLT thin films and the quality of the $ZrO_2$ and $CeO_2$ layer. AES show no interdiffusion and the formation of amorphous $SiO_2$ layer is suppressed by using the $ZrO_2$ and $CeO_2$ film as buffer layer between the BLT film and Si substrate. The width of the memory window in the C-V curves for the $BLT/ZrO_2/Si$ and $BLT/CeO_2/Si$ structure is 2.94 V and 1.3V, respectively. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.