• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.16-23
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• 2000

The epitaxial growth of $CeO_2$ films has been investigated on three different substrates-Si(111), $SrTiO_3$(001), and MgO(001)-over wide range of growth parameters using oxygen-plasma-assisted molecular beam epitaxy. Pure-phase, single-crystalline epitaxial films of $CeO_2$ (001) have been grown only on $SrTiO_3$(001). We discuss the growth conditions in conjunction with the choice of substrates required to synthe-size this oxide, as well as the associated characterization by menas of x-ray diffraction, reflection high-energy electron diffraction, low-energy electron diffraction, and x-ray photoelectron spectroscopy and diffraction. Successful growth of single crystalline $CeO_2$ depends critically on the choice of substrate and is rather insensitive to the growth conditions studied in this investigation. $CeO_2$(001) films on $SrTiO_3$exhibit the sturcture of bulk $CeO_2$ without surface reconstructions. Ti outdiffusion is observed on the films grown temperatures above $650^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.462-462
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• 2009

$CeO_2$는 고체 산화물 연료전지 (SOFC, soild oxide fuel cell)의 전해질 재료와 CMP(Chemical Mechanical Polishing) 슬러리 재료, 자동차의 3원 촉매, gas sensor, UV absorbent등 여러 분야에서 사용되고 있다. 본 연구에서는 위의 활용범위 외에 $CeO_2$의 구조적 안정성과 빠른 $Ce^{3+}/Ce^{4+}$의 전환 특성을 이용하여 lithium ion battery의 anode 재료로서 전기화학적 특성을 알아보고자 실험을 실시하였다. $CeO_2$ 합성에 사용되는 전구체인 cerium carbonate의 형상 및 크기, 비표면적과 같은 물리화학적 특성이 $CeO_2$ 분말의 특성에 직접적인 영향을 주기 때문에 전구체의 합성 단계에서 입자의 특성을 조절하였다. 전구체 합성의 출발원료로 cerium nitrate hexahydrate 와 ammonium carbonate를 사용하였고 반응온도 및 농도 등을 변화시켜 입자의 형상 및 결정상을 fiber형태의 orthorombic $Ce_2O(CO_3)_2{\cdot}H_2O$와 구형의 hexagonal $CeCO_3OH$의 세리아 전구체를 합성하였다. 이를 $300^{\circ}C$에서 30분 동안 하소하여 전구체의 입자형상을 유지하는 cubic $CeO_2$를 합성하고 X-ray diffraction, FE-SEM, micropore physisorption analyzer 분석을 통하여 입자의 결정상과 형상, 비표면적 등을 비교 분석하고 $Li/CeO_2$ couple의 충,방전 용량과 수명특성을 비교 분석하여 $CeO_2$의 전기화학적 특성을 알아보았다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.695-699
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• 2001

Cerium dioxide (CeO$_2$) was used as the intermediate layer between the ferroelectric thin film and Si substrate in a metal-ferroelectric-semiconductor field effect transistor (MFSFET), to improve the interface property by preventing the interdiffusion of the ferroelectric material and the Si substrate. In this study, CeO$_2$ thin films were etched with a CF$_4$/Ar gas combination in inductively coupled plasma (ICP). The maximum etch rate of CeO$_2$ thin films was 270$\AA$/min under CF$_4$/(CF$_4$+Ar) of 0.2, 600 W/-200V, 15 mTorr, and $25^{\circ}C$. The selectivities of CeO$_2$ to PR and SBT were 0.21, 0.25, respectively. The surface reaction in the etching of CeO$_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F. Compounds such as Ce-F$_{x}$ remains on the surface of CeO$_2$ thin films. Those products can be removed by Ar ion bombardment. The results of secondary ion mass spectrometry (SIMS) were consistent with those of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of CeO$_2$ thin films. The etch profile of over-etched CeO$_2$ films with the 0.5${\mu}{\textrm}{m}$ line was approximately 65$^{\circ}$.>.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.941-948
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• 1993

The powder mixture of Si3N4-AlN-Y2O3, Si3N4-AlN-CeO2 and Si3N4-AlN-Y2O3-CeO2 system was hot-pressed at 175$0^{\circ}C$ for 2h in N2 to prepare $\alpha$-Sialon ceramics. The mechanical property and oxidation behaviour of the prepared $\alpha$-Sialon ceramics were investigated. At 120$0^{\circ}C$, oxidation resistance was best for the Y2O3 added $\alpha$-Sialon ceramics and oxidation rate increased when the amount of CeO2 increased. But when the mixture of Y2O3 and CeO2 added $\alpha$-Sialon ceramics showed a good oxidation resistance. Fracture toughness of (Y2O3＋CeO2) added $\alpha$-Sialon ceramics was higher than Y2O3 added $\alpha$-Sialon ceramics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.3
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• pp.115-120
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• 2016

$CeO_2$ is used as a co-catalyst with $TiO_2$ to improve the catalytic activity of $MnO_x$ and characterization of nano-sized powder is identified with de-NOx efficiency. A comparison between $MnO_x-CeO_2/TiO_2$ and single $CeO_2$ was conducted in terms of microstructural analysis to observe the behavior of $CeO_2$ in the ternary catalyst. The $MnO_x-CeO_2/TiO_2$ catalyst was synthesized by sol-gel method and the average particle size of the single $CeO_2$ is about $285{\mu}m$ due to the low thermal stability, whereas the particle size $MnO_x-CeO_2/TiO_2$ is about 130 nm. The strong interaction between Ce and Ti was identified through the EDS mapping by transmission electron microscopy (TEM). The improvement about 20 % of $de-NO_x$ efficiency is observed in the low-temperature ($150^{\circ}C{\sim}250^{\circ}C$) and vigorous oxygen exchange by well-dispersed $CeO_2$ is the reason of catalytic activity improvement.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.757-760
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• 2009

최근 들어 WGS 반응은 Pt과 같은 귀금속 촉매를 다양한 담체에 담지하여 낮은 온도에서 높은 활성을 지닌 촉매를 제조하기 위한 연구가 활발히 진행되고 있다. WGS 반응에서 귀금속 촉매가 높은 활성을 가지기 위해서 높은 산소저장능력(Oxygen Storage Capacity)과 산화환원능력(Redox)을 지닌 담체 개발이 필요하다. Ce-$ZrO_2$ 담체는 구조적으로 안정하며 높은 산소저장능을 가지고 있는 것으로 알려져 있다. Ce-$ZrO_2$ 구조는 Ce/Zr 비에 따라 다양한 변화가 생긴다. Ce/Zr 비가 6/4, 8/2인 경우 입방구조(Cubic)를 가지며 2/8인 경우 정방입계(Tetragonal)구조를 가진다. 이것은 담체 특성의 변화를 의미한다. 따라서, WGS 반응용 최적 담체를 선정하기 위해 Ce/Zr 비를 제조변수로 하여 담체특성을 분석하였다. 제조된 모든 담체는 공침법(Co-precipitation)을 사용하여 제조하였으며 $500^{\circ}C$에서 6시간 소성하였다. 담체 특성분석은 BET, XRD를 이용하였다. 추가적으로 제조변수를 다양화하여 담체 제조를 마쳤으며 특성분석이 진행 중이다. 분석 결과 $Ce_{0.2}Zr_{0.8}O_2$ 담체가 가장 넓은 표면적을 가지고 있으며 Ce/Zr 비가 높아질수록 표면적이 감소하는 경향을 나타내었다. Ce-$ZrO_2$ 담체의 나노결정크기는 Ce/Zr 비가 작아질수록 결정크기가 감소하는 경향을 나타내었으며 $Ce_{0.2}Zr_{0.8}O_2$가 Ce-$ZrO_2$ 담체 중에서 가장 작은 결정크기를 나타내어 3nm 이하의 나노-담체가 제조되었음을 확인하였다.

• Progress in Superconductivity and Cryogenics
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• v.4 no.2
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• pp.21-26
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• 2002

Textured CeO2 buffer layers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition (MOCVD). The degree of texture of deposited $CeO_2$ films was strong1y dependent on the deposition temperature (Td) and oxygen Partial Pressure(PO2). ($\ell$00) textured $CeO_2$ films were well deposited at T=500~52$0^{\circ}C$. PO2=0.90~3.33 Torr. The surface morphology showed that the films consisted of columnar CeO2 films grown from the Ni substrates. The root mean square roughness of CeO$_2$ films estimated by atomic force microscopy(AFM) increased as the deposition temperature(Td) increa- sed. The growth rate of the $CeO_2$ films deposited at T=52$0^{\circ}C$ and PO2=2.30 Torr was 150~200 nm/min that was much faster than that of other Physical deposition methods.

• Journal of the Korean Solar Energy Society
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• v.34 no.6
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• pp.11-18
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• 2014

Two-step water splitting thermochemical cycle with $CeO_2$ foam device was investigated by using a solar simulator composed of 2.5 kW Xe-Arc lamp and mirror reflector. The hydrogen production of $CeO_2$ foam device depending on reaction temperature of Thermal-Reduction step and Water-Decomposition step was analyzed, and the hydrogen production of $CeO_2$ and $NiFe_2O_4/ZrO_2$ foam devices was compared. As a result, the amount of reduced $CeO_2$ considerably varies according to the reaction temperature of Thermal-Reduction step. and hydrogen production was not much when the amount of reduced $CeO_2$ decreased even if the reaction temperature of Water-Decomposition step was high. Therefore, it is very important to keep the reaction temperature of Thermal-Reduction step high in two-step thermochemical cycle with $CeO_2$.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.78-82
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• 1998

The oxygen nonstoichiometry (x) of UO$_{2+x}$ and $(Ce_yU_{1-y})O_{2+x}$ (y=0.05, 0.25) has been measured as a function of oxygen activity (a02) at 100$0^{\circ}C$ by a solid state coulometri titration technique. The results for UO$_{2+x}$ are in a good agreement with literature data and the ao2-dependence of the nonstoichimetry has been well explained with (2:2:2) cluster model. The equilibrium oxygen activity of $(Ce_yU_{1-y})O_{2+x}$ increases with Ce-content (y) for given nonstoichiometry (x), which is ascribed to the fact that Ce is present as Ce$^{3+}\; and\; Ce^{4+}$, and, therefore, the addition of Ce reduces the oxidation capacity of UO$_{2+x}$. From the oxygen activity dependence of x in $(Ce_yU_{1-y})O_{2+x}$ the defect structure of $(Ce_yU_{1-y})O_{2+x}$ is discussed.

• Korean Journal of Materials Research
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• v.10 no.8
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• pp.558-563
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• 2000

$Y_2SiO_5:Ce$ phosphor was coated with $In_2O_3$, $Al_2O_3$ and $SiO_2$ and then their cathodoluminance(CL)proper-ties required in field emission display were investigated. It was found that luminance efficiency and aging p개perty of $Y_2SiO_5:Ce$ phosphor was decreased with $In_2O_3$coating. For the case of coating, the luminance intensity was in blue phosphor was dramatically increased with $SiO_2$ coating. And also the aging property of $Y_2SiO_5:Ce$ Phosphor coated with $SiO_2$ was significantly improved compared to non-coated sample.