• Title/Summary/Keyword: CeO2

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RF Sputtered $SnO_2$, Sn-Doped $In_2O_3$ and Ce-Doped $TiO_2$ Films as Transparent Counter Electrodes for Electrochromic Window

  • 김영일;윤주병;최진호;Guy Campet;Didier Camino;Josik Portier;Jean Salardenne
    • Bulletin of the Korean Chemical Society
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    • v.19 no.1
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    • pp.107-109
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    • 1998
  • The $SnO_2$, Sn-doped $In_2O+3\; and \;Ce-doped\; TiO_2$ films have been prepared by RF sputtering method, and their opto-electrochemical properties were investigated in view of the applicability as counter electrodes in the electrochromic window system. These oxide films could reversibly intercalate $Li^+$ ions owing to the nanocrystalline texture, but remained colorless and transparent. The high transmittance of the lithiated films could be attributed to the prevalence of the $Sn^{4+}/Sn^{2+}\; and\; Ce^{4+}/Ce^{3+}$ redox couples having 5s and 6s character conduction bands, respectively. For the Ce-doped $TiO_2$ film, $(TiO_2)_{1-x}(CeO_2)_x$, an optimized electrochemical reversibility was found in the film with the composition of x = 0.1.

Dispersion of SmxCe1-xO2-2/x Nanoparticles which is Synthesized by Hydrothermal Process in Aqueous System (수열합성법으로 합성된 나노 SmxCe1-xO2-2/x 분말의 수계 분산)

  • Bae Dong-Sik;Kim Eun-Jung;Han Kyong-Sop
    • Korean Journal of Materials Research
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    • v.15 no.2
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    • pp.112-114
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    • 2005
  • Dispersion stability of the $Sm_xCe_{1-x}O_{2-2/x}$ nanoparticles, which was produced by hydrothermal process, was studied in aqueous suspension using ESA (Eletrokinetic Sonic Amplitude). The average particle size of the synthesized $Sm_xCe_{1-x}O_{2-2/x}$ at nanoparticles was about $5{\pm}2nm$. The dispersion and rheological behavior of the $Sm_xCe_{1-x}O_{2-2/x}$ nanoparticles aqueous suspension was investigated using $NH_4OH\;and\;HNO_3$ as a disperse agent. The colloidal stability of aqueous suspensions with $Sm_xCe_{1-x}O_{2-2/x}$ nanoparticles at different pH values has been investigated by means of zeta potential, average particle size, and the distribution of synthesized $Sm_xCe_{1-x}O_{2-2/x}$ nanoparticles. The isoelectric point of the $Sm_xCe_{1-x}O_{2-2/x}$ nanoparticles was at pH around 11 and the value of zeta potential was at its maximum near pH 6.5.

Effect of CeO2 Addition on De-CH4 and NOx Performance (CH4와 NOx 저감 성능에 관한 CeO2 첨가의 영향)

  • Seo, Choong-Kil
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.9
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    • pp.473-479
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    • 2017
  • Due to environmental pollution, hazards of the human body, and global warning, changes in the power train of automobiles are intensifying, and the market forelectronic vehicles is rising. Also, in order to meet the stricter emission regulations forautomobiles with internal combustion engines based on fossil fuel, the proportion of after-treatments for vehicles and vessels is increasing gradually. The objective of this study is to investigate the effectsfrom additive ceric oxide ($CeO_2$) loading amounts to improve the methane ($CH_4$) and nitric oxide (NOx) abatement ability of the natural gas oxidation catalysts(NGOC) reducing toxic gases emitted from compressed natural gas (CNG) buses. Three kinds of NGOC were prepared under the following conditions: fresh and $700^{\circ}C$ for 12hr thermal aging, and the reduction performance of toxic gases was evaluated. Fresh $1Pt-3Pd-1Rh-3MgO-6CeO_2/(Al+Z)$ NGOC containing 6wt% $CeO_2$ had the highest dispersivity of palladium (Pd) with high selectivity to $CH_4$ and improved harmful gas reduction performance. The NGOC with 6wt% $CeO_2$ loaded the least decreased in the dispersivity of the noble metal, and showed the highest reduction of harmful gases due to the thermal durability of $CeO_2$.

Fabrication of YBCO Superconducting Film with $CeO_2$/$BaTiO_3$Double Buffer Layer ($CeO_2$/$BaTiO_3$이중완충막을 이용한 YBCO 박막 제작)

  • 김성민;이상렬
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.11
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    • pp.959-962
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    • 2000
  • We have fabricated good quality superconducting YBa$_2$Cu$_3$$O_{7-x}$(YBCO) thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrates with CeO$_2$and BaTiO$_3$buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. YBCO film with CeO$_2$single buffer layer shows T$_{c}$ of 71.64 K and the grain size less than 0.1${\mu}{\textrm}{m}$. When BaTiO$_3$ is used as a single buffer layer, the grain size of YBCO is observed to be larger than that of YBCO/CeO$_2$by 200 times and the transition temperature of the film is enhanced to be about 84 K. CeO$_2$/BaTiO$_3$double buffer layer has been adopted to enhance the superconducting properties, which results in the enhancement of the critical temperature and the critical current density to be about 85 K and 8.4$\times$10$^4$ A/$\textrm{cm}^2$ at 77 K, respectively mainly due to the enlargement of the grain size of YBCO film.ilm.

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Development of Cu-CeO2 Catalysts for Selective Oxidation of CO (일산화탄소의 선택적 산화반응을 위한 Cu-CeO2 촉매의 개발)

  • Jung, C.-R.;Han, J.;Yoon, S.P.;Nam, S.-W.;Lim, T.-H.;Hong, S.-A.;Lee, H.-I.
    • Clean Technology
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    • v.8 no.1
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    • pp.53-59
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    • 2002
  • $Cu-CeO_2$ catalysts were prepared by co-precipitation and liquid phase oxidation (CP-LPO) and the prepared catalysts were examined as selective oxidation of carbon monoxide catalysts for the application of fuel cell vehicles. The prepared $Cu-CeO_2$ catalysts showed high reaction activity, but it was hard to find the correlation between the amount of Cu loaded and the reaction activities. As increase of the amount of Cu loaded, the micro pore structure of the catalyst was changed. It is due to the formation of solid solution between Cu and $CeO_2$. During pretreatment, the catalyst formed the solid-solution of Cu-Ce-O, resulting in the improvement of catalytic activity.

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$MgF_2/CeO_2$ AR Coating on p-type (100) Cz Silicon Solar Cells (p-type (100) Cz 단결정 실리콘 태양전지의 $MgF_2/CeO_2$ 반사 방지막에 관한 연구)

  • 이수은;최석원;박성현;강성호;이준신
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.593-596
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    • 1999
  • This paper presents a process optimization of antireflectiun (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a doble-layer AR(DLAR) coating of MgF$_2$/CeO$_2$, We investigated CeO$_2$ films as an All layer because they hale a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ film deposited at 400 $^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 7m to 1.1 7m. We achieved the efficiencies of solar cells greater than 15% with 3.12 % improvement with DLAR coatings . Further details on MgF$_2$, CeO$_2$ films, and cell fabrication Parameters are presented in this paper.

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A Study on MgF$_2$/CeO$_2$ AR Coating of Mono-Crystalline Silicon Solar Cell (단결정 실리콘 태양전지의 MgF$_2$/CeO$_2$ 반사 방지막에 환한 연구)

  • 유진수;이재형;이준신
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.10
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    • pp.447-450
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    • 2003
  • This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ deposited at 40$0^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4${\mu}{\textrm}{m}$ to 1.1${\mu}{\textrm}{m}$. We achieved the efficiencies of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details on MgF$_2$, CeO$_2$ films, and cell fabrication parameters are presented in this paper.

Effect of Ni on Pt/$Ce_{(1-x)}Zr_{(x)}O_2$ catalysts for water gas shift reaction (WGS 반응용 Pt/$Ce_{(1-x)}Zr_{(x)}O_2$ 촉매에 Ni 첨가에 따른 영향)

  • Jeong, Dae-Woon;Kim, Ki-Sun;Eum, Ic-Hwan;Lee, Sung-Hun;Koo, Kee-Young;Yoon, Wang-Lai;Roh, Hyun-Seog
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.11a
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    • pp.232-232
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    • 2009
  • 최근 WGS반응용 Pt 촉매의 성능 향상을 위한 다양한 담체 및 조촉매(Promotor) 개발에 대한 연구가 활발하게 진행되고 있다. 선행 연구결과, 입방(Cubic)구조를 가지는 $Ce_{0.8}Zr_{0.2}O_2$ 담체는 정방 입계(Tetragonal)구조를 가지는 $Ce_{0.2}Zr_{0.8}O_2$ 담체 또는 혼합산화물(Mixed oxide)구조를 가지는 $Ce_{0.5}Zr_{0.5}O_2$ 담체 보다 높은 활성과 안전성을 가진다. 이것은 촉매의 성능 향상이 Ce-$ZrO_2$의 결정구조에 의존한다는 것을 나타낸다. 따라서 WGS 반응에서 Ce/Zr 비에 따라 변화된 담체 특성이 Pt 촉매의 활성에 영향이 있을 것으로 예상되며 실험결과 1% Pt/$CeO_2$ 촉매가 가장 높은 활성을 나타내었다. 따라서 Pt/Ce-$ZrO_2$ 촉매의 성능 향상을 위해 Ce-$ZrO_2$ 담체에 조촉매인 Ni을 첨가하여 촉매적 활성을 비교하여 보았다. 촉매는 2%의 Pt과 15%의 Ni로 고정하였고 Ce/Zr 비를 제조변수로 하였다. 제조된 모든 담체는 공침법(Co-precipitation)을 사용하여 제조하였으며 $500^{\circ}C$에서 6시간 소성하였다. Pt 촉매는 함침법 (Incipient wetness impregnation)으로 담지 시켰다. 2% Pt/Ce-$ZrO_2$ 촉매와 2% Pt/15% Ni-Ce-$ZrO_2$ 촉매는 저온영역($200^{\circ}{\sim}320^{\circ}C$)에서 비슷한 CO 전환율을 나타내었으나 고온영역($360^{\circ}C{\sim}400^{\circ}C$)에서는 2% Pt/15% Ni-Ce-$ZrO_2$ 촉매가 더 높은 CO의 전환율을 나타내었다. 이것은 Ni의 영향으로 고온에서 부반응인 메탄화 반응(Methanation reaction)이 생긴 것으로 판단되어 메탄($CH_4$)의 선택도를 살펴본 결과 2% Pt/15% Ni-Ce-$ZrO_2$ 촉매가 고온영역($360^{\circ}{\sim}400^{\circ}C$)에서 급격하게 증가하는 것으로 나타나 메탄화 반응이 일어난 사실을 증명한다.

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Improvement of dielectric and interface properties of Al/CeO$_2$/Si capacitor by using the metal seed layer and $N_2$ plasma treatment (금속씨앗층과 $N_2$ 플라즈마 처리를 통한 Al/CeO$_2$/Si 커패시터의 유전 및 계면특성 개선)

  • 임동건;곽동주;이준신
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.326-329
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    • 2002
  • In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

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