• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.367-373
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• 2006

We have observed a large increase in the magnetoresistance (MR) of Bi thin films, which were subjected to a post-annealing procedure at $268^{\circ}C$C, $3^{\circ}C$ below the Bi melting point. We have achieved an increase in the MR by 260-fold and 1200-fold at 5 K and 5 T after post-annealing, as compared with 190 and 620 for an as-deposited Bi film on PbTe/CdTe(111) and on mica, respectively. The large MR increase by post-annealing might be due to the improvement of crystallinity according to the x-ray analysis. However, post-annealing over a certain amount time showed the reduction in MR values.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.126-131
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• 1999

$Cd_{1-x}Mn_xTe$ thin films were grown on GaTs (100) substrates by hot-wall epitaxy method. From the XRD measurements, it was found that CdTe/GaAs (100)film was grown as a single crystal with the same growth plane of (100) and $Cd_{1-x}Mn_xTe$film as a poly crystal as Mn content was increased, and the lattice constant was decressed with the similar gradient of bulk crystal as x was increased. From the PL measurements, $L_1$line due to the exciton trapped on an acceptor and $L_2$line due to an exciton trapped on a shallow potential fluctuation were observed, and $L_1$line was observed only in $Cd_{0.91}Mn_{0.09}$te but it was disappeared probably due to a stronger lacalization of excitons with increasing alloy fluctuation.$L_2$line was dominant in case of $x{\ge}0.2$and for higher Mn contents the broad transition about 2.0eV associated to the 3d levels of the $Mn^{2+}$ ion dominated the PL spectrum, and the $L_2$ transition become weaker and weaker. For$x{\ge}0.4$, the transition line about 2.0eV due to $Mn^{2+}$ion showed no shift.

• Journal of the Korean institute of surface engineering
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• v.31 no.6
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• pp.389-392
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• 1998

We have investigated the crystal properties of the Cd0.96Zn0.04Te(CZT) films evaporated on the Si(100) substrates by Elecctron Beam Evaporator(EBE) techique. The compositions of the As-preared films were different about 4% of atomic ratio, The films stucture was observad to be polycrystalline in cubic phase. Diffraction peaks were notable at the substrate temperature of $300^{\circ}C$. The reflectance measurements yield $E_1$=3.25~3.29 eV $E_1$+${\Delta}_1$=3.76~3.83 eV and $E_2$=5.08 eV,showing that the films wear in cubic phase. For the film evaporated at the substrate temperature of $150^{\circ}C$, the peaks of photocurrent are at 720nm and 980nm.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1264_1265
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• 2009

Cadmium Telluride (CdTe)를 이용한 박막형 태양전지 제작과 실용화에 있어 가장 큰 이슈는 대면적화에 따른 에너지 변환효율의 저하를 줄임으로써 고효율의 대면적 태양전지를 대량으로 생산하는 것이다. 따라서 본 연구에서는 태양전지 박막의 대면적 증착시 문제점 중에 하나인 불균일한 CdTe 박막의 증착을 방지하기 위한 선행연구를 진행하였다. 실험 방법으로는 Sputtering 법을 적용하여 박막 증착시 출력과 진공도에 따른 박막 두께의 표준편차와 RMS 표면 거칠기($R_{rms}$), 최고-최저점간 표면 거칠기($R_{p-v}$) 등의 거동을 고찰하였다. 이를 통해 Sputtering 공정 변수 중에 박막 두께의 표준 편차에 더 큰 영향을 미치는 변수를 조사하고, 후행 연구로 진행될 Sputtering 법을 이용하여 대면적에 균일하게 증착하는 방법에 적용하고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.9-14
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• 1996

The dependence of microstructural and optical properties of Ag-In-Sb-Te thin films on annealing heat-treatments was studied. It was found from the present work that the increase of reflectance after annealing heat-treatment is related with phase change of Ag-In-Sb-Te thin film from amorphous state to crystalline phases which involve Sb crystalline phase and AgInTe$_2$ stoichiometric phase. On the other hand, the reflectance is decreased after high temperature annealing (above 450$^{\circ}C$), due to the morphology .mange of film surface. For the purpose of practical application(erasable optical disk), we fabricated quadrilayered Ag-In-Sb-Te alloy disk, and annealed it with continuous laser beam. As result of this laser\ulcorner annealing treatment, we found that the increment of reflectance is 9.3% at 780nm wavelength. It might be considered that Ag-In-Sb-Te alloy optical disk is the big promising candidate for the erasable optical memory medium.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.616-621
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• 2011

In this paper, CdS thin films, which were widely used window layer of the CdTe and the Cu(In,Ga)$Se_2$ thin film solar cell, were grown by chemical bath deposition, and effects of pH of reaction solution on the structural and optical properties were investigated. For pH<10.5, as the pH of reaction solution was higher, the deposition rate of CdS films was increased by improving ion-by-ion reaction in the substrate surface and the crystallinity of the films was improved. However, when the pH was higher than 10.5, the deposition rate was decreased because of smaller $Cd^{2+}$ ion concentration in the reaction solution. Also, the crystallinity of the films were deteriorated. The CdS films deposited at lower pH showed poor optical transmittance due to adsorbed colloidal particles, while the transmittance was improved for higher pH.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.459.2-459.2
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• 2014

CdTe계와 CGIS계 태양전지의 광투과층으로 CdS 박막이 많이 사용된다. Cds 박막의 필요한 물성으로는 높은 광투과도와 얇은 두께이다. 광투과층으로 사용되는 CdS 막의 광투과도가 높아야 많은 양의 빛이 손실 없이 투과하여 광흡수층인 CIGS에 도달할 수 있다. 특히, CdS막의 두께가 얇으면 밴드 갭 이상의 에너지를 가지는 파장의 빛도 투과시킬 수 있어 태양전지의 효율의 증가을 얻을 수가 있다. 그러나 CdS 막의 두께가 얇을 경우, pinhole이 생성되는 등 막의 균질성이 문제가 된다. 본 연구에서는 높은 변환 효율을 갖는 CIGS 박막 태양전지 제작에 적합한 chemical bath depostion(츙)법을 이용하여 CdS 박막을 제조하였다. 또한 반응시간, Cd 및 S source 비와 같은 증착 조건에 따른 박막의 특성을 조사하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.365-365
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• 2009

CBD 증착 방법은 저비용으로 양질의 CdS 박막을 얻을 수 있는 증착 밥법으로, 고효율의 CdTe/CdS 태양전지를 얻기에도 적당하다. CdS 박막의 증착 과정에서 수산화 암모늄 (ammonium hydroxide) 은 박막의 특성을 결정하는 주요한 요소 인자 이다. ITO가 증착된 유리기판위에 CdS 박막 증착 과정에서 동일한 조건에서 산화 암모늄 (ammonium hydroxide) 의 농도만을 조절하여서, XRD, Raman spectrometer, UV-Vis, SEM 분석 장치를 이용하여 구조 및 광학 특성의 변화를 살펴보았다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.99.1-99.1
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• 2012

The thin-film photovoltaic absorbers (CdTe and $Cu(In,Ga)Se_2$) can achieve solar conversion efficiencies of up to 20% and are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as $Cu_2ZnSnS_4$ (CZTS) is an emerging solar absorber that is structurally similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4 - 1.6 eV and a large absorption coefficient of ~104 $cm^{-1}$. The CZTS absorber layers are grown and investigated by various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol-gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative aqueous chemical approach based on chemical bath deposition (CBD) method for large area deposition of CZTS thin films. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and some factors like triethanolamine, ammonia, temperature which strongly affect on the morphology of CZTS film.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.