• 제목/요약/키워드: CdTe (cadmium tellurium)

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CdTe 나노결정의 합성과 특성분석에 관한 연구 (A study on the synthesis and characterization of CdTe nanocrystals)

  • 주상민;강윤묵;김동환
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.111-111
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    • 2003
  • 반도체 나노결정은 양자구속효과(quantum confinement effect)에 의한 광학적인 특성을 갖기 때문에 광전자공학(optoelectronic), 광전지(photovoltaic)분야에 응용하려는 연구가 활발히 진행되고 있다. 본 연구에서는 고순도의 CdTe 나노결정을 1-thioglycerol 표면 완화제(surface stabilizer)로 사용하여 수용액 상태로 합성하였다. 모든 실험은 $N_2$ 분위기의 삼각플라스크에서 실험하였다. Cadmium 소오스로는 Cd(CIO$_4$)$_2$.6$H_2O$(Cadmium perchlorate hydrate-Aldrich)를 사용하였고 Tellurium 소오스로는 A1$_2$Te$_3$(Aluminum telluride-CERAC)와 H$_2$SO$_4$가 반응하여 H$_2$Te gas가 주입되도록 하였다. 합성된 CdTe 나노결정은 core-shell 형태로 존재하며 결정크기에 따른 특성분석을 위해서 High Resolution Transmission Electron Microscope (HRTEM), Photoluminescence spectroscopy, X-ray diffraction(XRD), UV-vis absorption spectra 분석을 하였다 또한 CdTe 나노결정을 나노와이어로 제작하여 CdTe 나노결정을 이용한 태양전지 제작에 응용하고자 한다.

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초음파 방법을 이용한 CdTe 양자점의 합성 및 특성에 관한 연구 (Study on Sonochemical Synthesis and Characterization of CdTe Quatum Dot)

  • 유정열;김우석;박선아;김종규
    • 공업화학
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    • 제28권5호
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    • pp.571-575
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    • 2017
  • 본 연구에서는 초음파 조사법을 사용하여 cadmium telluride (CdTe) 양자점을 합성하였다. 전구체의 비율과 합성 시간을 주 변수로 하여 그에 따른 CdTe 양자점의 광학적 특성과 구조적 특성을 분석하였다. 모든 cadmium (Cd)과 tellurium(Te) 함량비율의 실험에서 합성 시간이 증가함에 따라 CdTe 양자점의 성장에 의해 밴드갭 감소현상이 관찰되었고, 발광 특성을 확인한 결과 510~610 nm 파장 범위에서 장파장으로 이동함을 보였다. 또한 Te의 비율이 증가함에 따라 장파장이동이 빠르게 일어나는 것을 확인하였다. Photoluminescence (PL) 피크 강도를 확인하였을 때 합성시간이 180 min~240 min 사이에서 가장 높은 강도를 보였다. X-ray diffraction (XRD)와 transmission electron microscopy (TEM)으로 구조적 특성을 확인한 결과 zinc blend 구조의 CdTe 양자점을 나타내었으며, 합성시간이 210 min일 때 양자점의 크기는 약 2.5 nm로 균일하게 분산되어 있었으며 fast fourier transform (FFT) 이미지를 확인한 결과 뚜렷한 결정성을 확인하였다.

Syntheses of CdTe Quantum Dots and Nanoparticles through Simple Sonochemical Method under Multibubble Sonoluminescence Conditions

  • Hwang, Cha-Hwan;Park, Jong-Pil;Song, Mi-Yeon;Lee, Jin-Ho;Shim, Il-Wun
    • Bulletin of the Korean Chemical Society
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    • 제32권7호
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    • pp.2207-2211
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    • 2011
  • Colloidal cadmium telluride (CdTe) quantum dots (QDs) and their nanoparticles have been synthesized by one pot sonochemical reactions under multibubble sonoluminescence (MBSL) conditions, which are quite mild and facile compared to other typical high temperature solution-based methods. For a typical reaction, $CdCl_2$ and tellurium powder with hexadecylamine and trioctylphosphine/trioctylphosphineoxide (TOP/TOPO) as a dispersant were sonicated in toluene solvent at 20 KHz and a power of 220W for 5-40 min at 60 $^{\circ}C$. The sizes of CdTe particles, in a very wide size range from 2 nm-30 ${\mu}m$, were controllable by varying the sonicating and thermal heating conditions. The prepared CdTe QDs show different colors from pale yellow to dark brown and corresponding photoluminescence properties due mainly to the quantum confinement effect. The CdTe nanoparticles of about 20 nm in average were found to have band gap of 1.53 eV, which is the most optimally matched band gap to solar spectrum.

Low-temperture Synthesis of CdTe/Te Core-shell Hetero-nanostructures by Vapor-solid Process

  • 송관우;김태훈;배지환;이재욱;박민호;양철웅
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.580-580
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    • 2012
  • Heterostructures has unique and important properties, which may be helpful for finding many potential applications in the field of electronic, thermoelectric, and optoelectronic devices. We synthesized CdTe/Te core-shell heterostructures by vapor-solid process at low temperatures using a quartz tube furnace. Two step vapor-solid processes were employed. First, various tellurium structures such as nanowires, nanorods, nanoneedles, microtubes and microrods were synthesized under various deposition conditions. These tellurium nanostructures were then used as substrates in the second step to synthesize the CdTe/Te core-shell heterostructures. Using this method, various sizes, shapes and types of CdTe/Te core-shell structures were fabricated under a range of conditions. These structures were analysed by scanning electron microscopy, high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. The vapor phase process at low temperatures appears to be an efficient method for producing a variety of Cd/Te hetero-nanostructures. In addition, the hetero-nanostructures can be tailored to the needs of specific applications by deliberately controlling the synthetic parameters.

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빛을 이용한 CdTe 나노입자의 자기조립과정을 통한 나노리본으로의 변화 (Transformation of Semiconductor Nanoparticles into Twisted-Nanoribbons under Light)

  • 이승민;이기선;홍연기;박병흥;김기섭
    • 융복합기술연구소 논문집
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    • 제3권1호
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    • pp.51-54
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    • 2013
  • Cadmium telluride(CdTe) nanowires were successfully synthesized from individual nanoparticles via self-assembly and the evolutionary process was investigated. The oxidation of tellurium ions on CdTe nanoparticles resulted in the organization of individual nanoparticle into twisted-nanoribbons. The nanoparticles self-assembled to twisted ribbons under light while nanoparticles under dark transformed to straight nanowires made of several layers of individual nanoparticles. The images of nanoribbons were analysed based on transmission electron microscopy and scanning electron microscopy. The photoluminescence was blue-shifted from 555 to 545nm.

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Study on Characteristic difference of Semiconductor Radiation Detectors fabricated with a wet coating process

  • Choi, Chi-Won;Cho, Sung-Ho;Yun, Min-Suk;Kang, Sang-Sik;Park, Ji-Koon;Nam, Sang-Hee
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.192-193
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    • 2006
  • The wet coating process could easily be made from large area film with printing paste mixed with semiconductor and binder material at room temperature. Semiconductor film fabricated about 25mm thickness was evaluated by field emissions-canning electron microscopy (FE-SEM). X-ray performance data such as dark current, sensitivity and signal to noise ratio (SNR) were evaluated. The $Hgl_2$ semiconductor was shown in much lower dark current than the others, but the best sensitivity. In this paper, reactivity and combination character of semiconductor and binder material that affect electrical and X-ray detection properties would prove out though experimental results.

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