• Title/Summary/Keyword: CdS layer

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Design and Analysis of a Controlled Diffusion Aerofoil Section for an Axial Compressor Stator and Effect of Incidence Angle and Mach No. on Performance of CDA

  • Salunke, Nilesh P.;Channiwala, S.A.
    • International Journal of Fluid Machinery and Systems
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    • v.3 no.1
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    • pp.20-28
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    • 2010
  • This paper deals with the Design and Analysis of a Controlled Diffusion Aerofoil (CDA) Blade Section for an Axial Compressor Stator and Effect of incidence angle and Mach No. on Performance of CDA. CD blade section has been designed at Axial Flow Compressor Research Lab, Propulsion Division of National Aerospace Laboratories (NAL), Bangalore, as per geometric procedure specified in the U.S. patent (4). The CFD analysis has been performed by a 2-D Euler code (Denton's code), which gives surface Mach No. distribution on the profiles. Boundary layer computations were performed by a 2-D boundary layer code (NALSOF0801) available in the SOFFTS library of NAL. The effect of variation of Mach no. was performed using fluent. The surface Mach no. distribution on the CD profile clearly indicates lower peak Mach no. than MCA profile. Further, boundary layer parameters on CD aerofoil at respective incidences have lower values than corresponding MCA blade profile. Total pressure loss on CD aerofoil for the same incidence range is lower than MCA blade profile.

Effect of Complex Agent NH3 Concentration on the Chemically Deposited Zn Compound Thin Film on the $Cu(In,Ga)Se_2$

  • Shin, Dong-Hyeop;Larina, Liudmila;Yun, Jae-Ho;Ahn, Byung-Tae;Park, Hi-Sun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.35.1-35.1
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    • 2010
  • The Cu(In,Ga)Se2(CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, many groups made hard efforts to overcome its disadvantages in terms of high absorption of short wavelength, Cd hazardous element. Among Cd-free candidate materials, the CIGS thin film solar cells with Zn compound buffer layer seem to be promising with 15.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, few groups were successful to report high-efficiency CIGS solar cells with Zn compound buffer layer, compared to be known how to fabricate these solar cells. Each group's chemical bah deposition (CBD) condition is seriously different. It may mean that it is not fully understood to grow high quality Zn compound thin film on the CIGS using CBD. In this study, we focused to clarify growth mechanism of chemically deposited Zn compound thin film on the CIGS, especially. Additionally, we tried to characterize junction properties with unfavorable issues, that is, slow growth rate, imperfect film coverage and minimize these issues. Early works reported that film deposition rate increased with reagent concentration and film covered whole rough CIGS surface. But they did not mention well how film growth of zinc compound evolves homogeneously or heterogeneously and what kinds of defects exist within film that can cause low solar performance. We observed sufficient correlation between growth quality and concentration of NH3 as complex agent. When NH3 concentration increased, thickness of zinc compound increased with dominant heterogeneous growth for high quality film. But the large amounts of NH3 in the solution made many particles of zinc hydroxide due to hydroxide ions. The zinc hydroxides bonded weakly to the CIGS surface have been removed at rinsing after CBD.

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Synthesis of Magneli Phases and Application to the Photoelectrochemical Electrode (마그넬리상 합성과 광전기화학셀 전극 응용)

  • Park, Jihwan;Nguyen, Duc Quang;Yang, Haneul;Hong, Soonhyun;Truong, Thi Hien;Kim, Chunjoong;Kim, Dojin
    • Korean Journal of Materials Research
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    • v.28 no.5
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    • pp.261-267
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    • 2018
  • Hydrothermal synthesis of highly crystalline $TiO_2$ nanorods is a well-developed technique and the nanorods have been widely used as the template for growth of various core-shell nanorod structures. Magneli/CdS core-shell nanorod structures are fabricated for the photoelectrochemical cell (PEC) electrode to achieve enhanced carrier transport along the metallic magneli phase nanorod template. However, the long and thin $TiO_2$ nanorods may form a high resistance path to the electrons transferred from the CdS layer. $TiO_2$ nanorods synthesized are reduced to magneli phases, $TixO_{2x-1}$, by heat treatment in a hydrogen environment. Two types of magneli phase nanorods of $Ti_4O_7$ and $Ti_3O_5$ are synthesized. Structural morphology and X-ray diffraction analyses are carried out. CdS nano-films are deposited on the magneli nanorods for the main light absorption layer to form a photoanode, and the PEC performance is measured under simulated sunlight irradiation and compared with the conventional $TiO_2/CdS$ core-shell nanorod electrode. A higher photocurrent is observed from the stand-alone $Ti_3O_5/CdS$ core-shell nanorod structure in which the nanorods are grown on both sides of the seed layer.

Effect of CdTe Deposition Conditions by Close spaced Sublimation on Photovoltaic Properties of CdS/CdTe Solar Cells (CdTe박막의 근접승화 제조조건에 따른 CdS/CdTe 태양전지의 광전압 특성)

  • Han, Byung-Wook;Ahn, Jin-Hyung;Ahn, Byung-Tae
    • Korean Journal of Materials Research
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    • v.8 no.6
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    • pp.493-498
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    • 1998
  • CdTe films were deposited by close spaced sublimation with various substrate temperatures, cell areas, and thicknesses of CdTe and ITO layers and their effects on the CdS/CdTe solar cells were investigated. The resistivity of CdTe layers employed in this study was 3$\times$ $10^{4}$$\Omega$cm For constant substrate temperature the optimum substrate ternperature for CdTe deposition was $600^{\circ}C$. To obtain larger grain size and more compact microstructure, CdTe film was initially deposited at 62$0^{\circ}C$, and then deposited at 54$0^{\circ}C$. The CdTe film was annealed at 62$0^{\circ}C$ and $600^{\circ}C$ sequentially to maintain the CdTe film quality. The photovoitaic cell efficiency improved by the "two-wave" process. For constant substrate temperature, the optimum thickness for CdTe was 5-6$\mu m$. Above 6$\mu m$ CdTe thickness, the bulk resistance of CdTe film degraded the cell performance. As the cell area increased the $V_{oc}$ remained almost constant, while $J_{sc}$ and FF strongly decreased because of the increase of lateral resistance of the ITO layer. The optimum thickness of the ITa layer in this study was 300~450nm. In this experiment we obtained the efficiency of 9.4% in the O.5cm' cells. The series resistance of the cell should be further reduced to increase the fill factor and improve the efficiency.

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A study on the electrical characteristics of CdZnS/CdTe heterojunction (CdZnS/CdTe 이종접합의 전기적 특성에 관한 연구)

  • Lee, Jae-Hyeong
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.7
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    • pp.1647-1652
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    • 2010
  • A CdS film has been used as a window layer in CdTe and Cu(In,Ga)$Se_2$ thin films solar cell. Partial substitution of Zn for Cd increases the photocurrent and the open-circuit voltage by providing a match in the electron affinities of the two materials and the higher band gap. In this paper, CdZnS/CdTe and CdS/CdTe heterojunctions were fabricated and the electrical characteristics were investigated. Current-voltage-temperature measurements showed that the current transport for CdS/CdTe heterojunction was controlled by both tunneling and interface recombination. However, CdZnS/CdTe heterojunction displayed different current transport mechanism with the operating temperature. For above room temperature, the current transport of device was generation/recombination in the depletion region and was the leakage current and/or tunneling in the range below room temperature.

CIGS 박막 태양전지용 CdS버퍼층의 제조 조건에 따른 특성 변화

  • Seo, Mun-Su;Lee, Su-Ho;Hong, Byeong-Yu;Park, Yong-Seop;Lee, Jae-Hyeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.321.2-321.2
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    • 2013
  • CdS는 2.42 eV의 밴드 갭을 가지는 직접 천이형 반도체로서 CdTe계와 CGIS계 태양전지의 접합 partner로 많이 이용되어 왔다. 태양전지의 광투과층으로 사용되는 CdS 박막의 필요한 물성으로는 높은 광투과도와 얇은 두께이다. 광투과층으로 사용되는 CdS 막의 광투과도가 높아야 많은 양의 빛이 손실 없이 투과하여 광흡수층인 CIGS에 도달할 수 있다. 특히, CdS막의 두께가 얇으면 밴드 갭 이상의 에너지를 가지는 파장의 빛도 투과시킬 수 있어 태양전지의 효율의 증가을 얻을 수가 있다. 그러나 CdS 막의 두께가 얇을 경우, pinhole이 생성되는 등 막의 균질성이 문제가 되기 때문에 얇으면서도 pinhole이 없는 CdS 박막을 만들기 위한 연구가 진행되고 있다. 본 연구에서는 높은 변환 효율을 갖는 CIGS 박막 태양전지 제작에 적합한 chemical bath depostion(츙)법을 이용하여 CdS 박막을 제조하였다. 또한 반응온도, Cd 및 S source 비, 반응용액의 pH와 같은 증착 조건에 따른 박막의 구조적, 광학적 특성을 조사하였다.

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Solution processed inverted organic solar cells with hybrid inorganic/organic cathode interlayers

  • Lee, Jung Suk;Cha, Myoung Joo;Park, Yu Jung;Kim, Jin Young;Seo, Jung Hwa;Walker, Bright
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.154.2-154.2
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    • 2016
  • In this work, we introduce a solution-processed CdS interlayer for use in inverted bulk heterojunction (BHJ) solar cells, and compare this material to a series of standard organic and inorganic cathode interlayers. Different combinations of solution-processed CdS, ZnO and conjugated polyelectrolyte (CPE) layers were compared as cathode interlayers on ITO substrates to construct inverted solar cells based on $PTB7:PC_{71}BM$ and a $P3HT:PC_{61}BM$ as photoactive layers. Introduction of a CdS interlayer significantly improved the power conversion efficiency (PCE) of inverted $PTB7:PC_{71}BM$ devices from 2.0% to 4.9%, however, this efficiency was still fairly low compared to benchmark ZnO or CPE interlayers due to a low open circuit voltage ($V_{OC}$), stemming from the deep conduction band energy of CdS. The $V_{OC}$ was greatly improved by introducing an interfacial dipole (CPE) layer on top of the CdS layer, yielding outstanding diode characteristics and a PCE of 6.8%. The best performing interlayer, however, was a single CPE layer alone, which yielded a $V_{OC}$ of 0.727 V, a FF of 63.2%, and a PCE of 7.89%. Using $P3HT:PC_{61}BM$ as an active layer, similar trends were observed. Solar cells without the cathode interlayer yielded a PCE of 0.46% with a poor $V_{OC}$ of 0.197 V and FF of 34.3%. In contrast, the use of hybrid ZnO/CPE layer as the cathode interlayer considerably improved the $V_{OC}$ of 0.599 V and FF of 53.3%, resulting the PCE of 2.99%. Our results indicate that the CdS layer yields excellent diode characteristics, however, performs slightly worse than benchmark ZnO and CPE layers in solar cell devices due to parasitic absorption below 550 nm. These results suggest that the hybrid inorganic/organic interlayer materials are promising candidates as cathode interlayers for high efficiency inverted solar cells through the modification of interface contacts.

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TiO2 Nanotube Arrays Sensitized with CdS and CdSe for Solar Hydrogen Production (태양광 수소 생산용 CdS와 CdSe 흡착 TiO2 나노튜브 어레이)

  • Shaislamov, Ulugbek;Kim, Hyun;Yang, Bee-Lyong
    • Journal of the Korean Ceramic Society
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    • v.49 no.1
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    • pp.130-133
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    • 2012
  • In this work we report investigation results of enhanced visible light photocatalytic properties of CdS and CdSe sensitized $TiO_2$ nanotube heterostructures. Anodically grown ordered $TiO_2$ nanotube arrays were sensitized with CdS and CdSe by using successive ionic layer adsorption and reaction method. Photocatalytic measurements revealed that heterostructured samples show enhanced photocurrent density under the visible light illumination. Improved visible light performance of the heterostuctures was explained by lower band gap of the CdS and CdSe and their favorable conduction band positions relative to $TiO_2$. Moreover, due to the lower band gap of the CdSe (1.7 eV) compared to CdS (2.4 eV), both photocurrent density and photoconversion efficiency results showed superior activity.

ALD를 이용하여 살펴본 CdSe/CdS Quantum Dot-sensitized Solar Cell에서의 TiO2 Passivation 효과

  • Park, Jin-Ju;Lee, Seung-Hyeop;Seol, Min-Su;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.370-370
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    • 2011
  • ZnO 나노 라드 위에 Quantum dot을 형성하고 최종적으로 TiO2를 Atomic Layer Deposition방법으로 증착하여, 그 passivation 효과가 solar cell의 효율에 미친 영향에 대한 실험을 진행하였다. 암모니아 솔루션을 이용한 Hydrothermal 방법으로 수직한 1차원 형태의 ZnO 나노라드를 TCO 기판 위에 성장시킨다. 여기에 잘 알려진 SILAR와 CBD 방법으로 CdS, CdSe 양자점을 증착한다. 그리고 amorphous TiO2로 표면을 덮는 과정을 거치는데, TiO2가 좁은 간격으로 형성된 ZnO라드 구조 위에서 균일하고 정밀하게 증착되도록 하기 위해 Atomic Layer Deposition을 이용하였다. 사용된 precursor는 Titanium isopropoxide와 H2O이며, 실험상에서 0~5 nm 두께의 TiO2 박막을 형성해 보았다. 다양한 분석 방법을 통해 TiO2/QDs/ZnO의 shell-shell-core 구조를 조사했다. (Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), and X-ray Photoelectron Spectroscopy (XPS)). 이를 solar cell에 적용하고 I-V curve를 통해 그 효율을 확인하였으며, Electrochemical Impedance Spectroscopy (EIS)를 통해서 재결합 측면에서 나타나는 변화 양상을 확인하였다.

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Fabrication of Organic Electroluminescent Device and electro-optical properties using metal-chelates($Snq_2,Snq_4$) for Emitting Material Layer (금속-킬레이트계($Snq_2,Snq_4$) 발광층을 이용한 유기 전기 발광 소자의 제작과 전기.광학적 특성)

  • Yoon, H.C.;Yoo, J.H.;Kim, B.S.;Kim, J.K.;Kwon, Y.S.
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1575-1577
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    • 2002
  • In this study, multi layer type OLED(Organic Light Emitting Diode) has been fabricated using $Snq_2$, $Snq_4$, and $Alq_3$ for development of high efficiency, electrical and optical properties of multi layer type OLED investigated. The HTL(Hole Transfer Layer) and EML(Emitting Material Layer) were fabricated by using vacuum evaporation on ITO electrode, and its thickness controlled using thickness monitor. Al was used as a cathode. The electrical and optical properties such as J-V, brightness-V and EL spectrum of OLED device was measured using I.V.L.T system. The result, brightness of $Alq_3$, $Snq_2$ and $Snq_4$ were $3900cd/m^2$, $63cd/m^2$ and $23cd/m^2$ respectively.

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