• 한국응용과학기술학회지
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• 제7권1호
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• pp.77-80
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• 1990

Using $CdCl_2$ buffer solution as subphase for LB films deposition, it was achieved successively to fabricate the Y-type mixed LB films of (N-eicosyl pyridinium)-TCNQ(1:2) complex and arachidic acid. By measure of U.V spectra and capacitance, deposition status was confirmed. Electrical conductivity was measured on a perpendicular direction of the LB films and in consequence of calculated was average $2.5\;{\times}\;10^{-13}$ - $2\;{\times}\;10^{-14}$ S/cm.

• 공업화학
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• 제32권5호
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• pp.504-508
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• 2021

본 연구에서는 게스트 분자(guest molecule)의 특성이 고분자/베타-사이클로덱스트린(beta-cyclodextrin) 포접화합물(inclusion compound)로 이루어진 고분자 필름의 구조 및 물성에 미치는 영향에 대해서 고찰하고자 한다. 본 연구에서 사용된 게스트 분자는 미백 효과를 지니는 것으로 알려진 3가지로 하이드로퀴논(hydroquinone, HQ), 알부틴(arbutin, AB), 그리고 트랜액사믹 애시드(tranexamic acid, TA)이다. 먼저, 베타-사이클로덱스트린과 게스트 분자 간의 포접화합물의 성공적인 형성과 이를 포함하는 고분자 필름의 제조여부를 라만(Raman) 분광학으로 확인하였다. 포접화합물을 포함하는 고분자 필름의 구조 및 물성은 엑스선 회절법(X-ray diffraction)과 주사열용량법 및 열중량추적법 같은 열분석법으로 고찰하였다. 그 결과, 트랜액사믹 애시드의 영향이 다른 분자의 영향과 비교하여 상당히 상이하였음을 관찰할 수 있었다. 이러한 경향은 간단한 분자 시뮬레이션 기법으로 재검증하였다. 본 연구는 포접화합물을 형성하는 게스트 분자들의 상이한 영향에 대한 체계적인 접근을 통한 실험적 검증의 사례로 향후 관련 연구에 중요한 정보를 제공할 것으로 기대된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.76-77
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• 2005

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410$^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXO). The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorpt ion spectra was wel1 described by the Varshni's relation, $E_g$(T) = 2.8382 eV - ($8.86\times10^{-4}$ eV/H)$T_2$/(T + 155K). After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{cd}$, $V_{se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also. we confirmed that hi in $CuAlSe_2$/GaAs did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• 한국재료학회지
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• 제30권10호
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• Journal of Advanced Marine Engineering and Technology
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• 제30권4호
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• pp.514-519
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• 2006

SrS:Cu, Cl thin films have been grown by the hot wall technique with S furnace placed on the outside of the growth chamber in order to investigate the crystallographic and optical characteristics. The films have a good crystallinity independent of CuCl wall temperature and PL characteristics showed a peak assigned by the transition form $3d^94s^1\;(^3Eg)$ to $3d^{10}\;(^1A_{1g})$ of $Cu^+$ center. It has also been found that. from the PLE spectra, $Cu^+$ luminescent centers are doped in the host materials. The EL emission from SrS:Cu-based device showed a greenish-blue but shifted to short wavelength compared to SrS:Ce-based EL. The device was obtained the maximum luminance of $110cd/m^2$ and the maximum luminous efficiency of $0.1\;lm/W$ at $V_{40}$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1437-1439
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• 1996

In this paper, investigations on a three stage processing technique involving the co-evaporation of In-Se, Cu-Se and In-Se in this order at different deposition condition was undertaken. At first stage, we obtained good $In_{2}Se_{3}$ films by In-Se coevaporation. $In_{2}Se_{3}$ films show smooth and dense structure. And ration of In:Se was 2:3 $CulnSe_2$ thin films deposited by three stage process have shown strong adhesion on Mo coated glass substrates and good morphological properties suitable device fabrication. XWD spectra show single phase chalcopyrite $CulnSe_2$ films with strong orientation in the 112 plane. Resistivity of $CulnSe_2$ thin films was about $5{\times}10^{5}\;{\Omega}{\cdot}cm$. Surface morphology of CdS/$CulnSe_2$/Mo films was very good because of no pin holes.

• 한국컴퓨터정보학회논문지
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• 제22권11호
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• pp.135-141
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• 2017

Exposed to a great many media and technology resources, EFL students seem to lack the motivations for learning on the basis of the conventional teaching methods. For this reason, in teaching English, finding teaching methods and materials appropriate to make the learning experiences for EFL students more engaging and interesting has become more challenging than ever. This is the main reason why English language teachers always keep searching for more motivating teaching sources. Although most of course books have CD's and DVD enclosed, these turn out to be less authentic and not very engaging for students. In order to bring diversity into the classroom, many teachers use films in EFL teaching. Films are usually seen as a media that attracts students' attention and tend to present language in a more natural (interactive) way as well. What is more important is that films offer a visual context aids which help students understand and improve their reading skills. This paper analyzes the effects of using films in the EFL classroom. Moreover, It shows that films as a teaching resource play a very effective role in developing students reading and communication skill. Last but not least, mobile phones are used as a main supplementary device in that either group is recommended to watch a movie anytime and anywhere.

• 한국재료학회지
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• 제18권7호
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• pp.379-383
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• 2008

We report on the light-emitting diode (LED) characteristics of core-shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in $TiO_2$thin films on a Si substrate. A simple p-n junction could be formed when nanocrystal QDs on a p-type Si substrate were embedded in ${\sim}5\;nm$ thick $TiO_2$ thin film, which is inherently an n-type semiconductor. The $TiO_2$ thin film was deposited over QDs at $200^{\circ}C$ using plasma-enhanced metallorganic chemical vapor deposition. The LED structure of $TiO_2$/QDs/Si showed typical p-n diode currentvoltage and electroluminescence characteristics. The colloidal core-shell CdSe/ZnS QDs were synthesized via pyrolysis in the range of $220-280^{\circ}C$. Pyrolysis conditions were optimized through systematic studies as functions of synthesis temperature, reaction time, and surfactant amount.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.539-545
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• 2001

Undoped and Co$^{2+}$ $\alpha$-Ga$_2$S$_3$ thin films were grown by spray pyrolysis method. It has been found that these thin films have a monoclinic structure and direct optical energy gap and indirect were located to 3.477eV and 3.123 eV at 10K respectively. In the photoluminescence due to a D0A(donor-acceptor) pair recombination were observed at 502 nm and 671 nm for the $\alpha$-Ga$_2$S$_3$ thin film, where is excited by the 325 nm-line of He-Cd laser. These peaks are identified to be corresponding to the electron transition between the energy levels of Co$^{2+}$ ion sited a the T$_{d}$ symmetry point in the $\alpha$-Ga$_2$S$_3$;Co$^{2+}$ thin film. film.

• Macromolecular Research
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• 제17권12호
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• pp.995-1002
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• 2009

Luminescent polynorbornene (PNB)/quantum dot (CdSe@ZnS; QD) composite nanorods and nanotubes were successfully prepared using anodic aluminum oxide (AAO) membranes of various pore sizes as templates. To protect QDs with high quantum yield from quenching during the phosphoric acid treatment used to remove the AAO templates, chemically stable and optically clear norbornene-maleic anhydride copolymers (P(NB-r-MA)) were employed as a capping agent for QDs. The amine-terminated QDs reacted with maleic anhydride moieties in P(NB-r-MA) to form PNB-grafted QDs. The chemical- and photo-stability of QDs encapsulated with PNB copolymers were investigated by photoluminescence (PL) spectroscopy. By varying the pore size of the AAO templates from 40 to 380 urn, PNB/QD composite nanorods or nanotubes were obtained with a good dispersion of QDs in the PNB matrix.