• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1418-1420
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• 1996

In this paper, structural properties of CdTe thin films and photovoltaic properties of thin film CdS/CdTe solar ceIl prepared by thermal vacuum evaporation were studied. Structural variation with $CdCl_2/heat$ treatment are assessed using x-ray diffraction and scanning electron microscopy. The crystal structure of CdTe films was zincblend type with preferential orientation of the (111) plane parallel to the substrate. The $CdCl_2$ treatment appears to increase the grain size of polycrystalline CdTe thin film. It was found that CdS/CdTe solar cell characteristics were improved by the heat treatment with $CdCl_2$. The conversion efficiency, however, decreased when heat treatment temperature was too high.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.33-33
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• 1999

• 한국재료학회지
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• 제9권8호
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• pp.782-786
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• 1999

진공증착법으로 CdS 박막을 제작하여 열처리한 시료를 상온에서 SEM, XRD, EDX와 PL 특성을 측정하여 $50^{\circ}C 와 450^{\circ}C$ 사이에서 cubic to hexagonal phase transition을 확인하였다. 열처리 결과 S-빈자리에 $O_2$와 Si불순물이 보상되어 CdO 또는 $Cd_2SiO_4$주개준위(donor level)를 만드는데 광발광 측정에서 열처리온도 $350^{\circ}C$에서는 2.34eV, $550^{\circ}C$는 2.42eV에서 EE 피이크를 나타내었다. 이러한 특성결과 본 연구에서 결정구조변환 온도는 $370{\circ}C$를 나타내었으며 Ariza-Calderon 등의 CBD박막에 대한 결과인 $374^{\circ}C$와 유사한 것으로 확인되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.56-58
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• 1989

All-polycrystalline Cd$_1$-xZnxS/CdTe solar cells have been fabricated by coating CdTe slurries with 4.5 wt% of CdCl$_2$on the sintered Cd$_1$-xZnxS films and by sintering CdTe layer at 6$25^{\circ}C$ for lh in nitrogen atmosphere. Solar efficiency of the sintered Cd$_1$-xZnxS/CdTe solar cells increases as the Zn content increases up to x=0.06 and then decreases with further increase in the Zn content. A solar efficiency of 12.5% under a solar intensity of 76mW/$\textrm{cm}^2$ was observed in a Cd 0.94 Zn0.06S/CdTe solar cell. By optimizing the amount of CdCl$_2$in the slurry and sintering conditions, it is possible to produce Cd$_1$-xZnxS/CdTe solar cells with efficiency higher than 12%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1457-1458
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• 2011

PET 기판은 소수성이므로 용액 성장법(CBD)으로 CdS 박막을 성장시키기 어렵다. 이런 단점을 극복하기 위하여 기판으로 사용할 PET의 표면을 산소 분위기에서 IPC로 개질하여 실험한 결과 CdS 박막을 성공적으로 성장시킬 수 있었다. 개질된 PET 기판의 접촉각과 표면 거칠기 등을 관찰하였으며, 성장된 CdS 박막의 SEM 분석 등을 통하여 개선된 특성을 확인하였다.

• 한국진공학회지
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• 제1권3호
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• pp.353-359
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• 1992

본 연구에서는 HWE 방법에 의하여 GaAs(100) 기판위에 입방정의 단결정 박막을 성장하였다. 성장된 CdS 단결정 박막의 결정구조와 방향을 ECP(electron channeling pattern)로 결정하였다. CdS 박막의 (400)면이 기판과 평행하게 성장됨을 알았다. CdS 박 막의 photoluminescence를 20K에서 측정하였는데, free exception, bound exception 및 donor-acceptor pair에 의한 발광이 관측되었다.

• 한국수소및신에너지학회논문집
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• 제13권1호
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• pp.34-41
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• 2002

CdS and $TiO_2$ nanoparticles were made by the precipitation method and sol-gel method, respectively, and they were mixed mechanically and then treated with the hydrothermal processing. CdS-$TiO_2$ composite particulate films were thus prepared by casting CdS-$TiO_2$ mixed sol onto $SnO_2$ conducting glass and a subsequent heat-treatment at $400^{\circ}C$. Again, the physico-chemical and photoelectrochemical properties of these films were controlled by the surface treatment with $TiCl_4$ aqueous solution. The photocurrents and the hydrogen production rates measured under the present experimental conditions varied in the range of $3.5{\sim}4.5mA/cm^2$ and $0.3{\sim}1.8cc/cm^2$-hr, respectively, and showed the maximum values at the $CdS/[CdS+TiO_2]$ mole ratio of 0.2. Also, the surface treatment with $TiCl_4$ aqueous solution caused a considerable improvement in the photocatalytic activity, Probably as a result of close contacts between the primary particles by the etching effect of $TiCl_4$ It was found that the photoelectrochemical performance of these particulate films could be effectively enhanced by this approach.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.267-275
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• 2015

In this paper, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form ZnO/CdS heterojunction. More accurate mapping of band arrangement of the ZnO/CdS heterojunction has been performed by analyzing its electrical and optical characteristics in depth by various methods including transmittance, x-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS). The optical bandgap energies ($E_g$) of ZnO and CdS were 3.27 eV and 2.34 eV, respectively. UPS was capable of extracting the ionization potential energies (IPEs) of the materials, which turned out to be 8.69 eV and 7.30 eV, respectively. The electron affinity (EA) values of ZnO and CdS calculated from IPE and $E_g$ were 5.42 eV and 4.96 eV, respectively. Energy-band structures of the heterojunction could be accurately drawn from these parameters taking the conduction band offset (CBO) into account, which will substantially help acquisition of the full band structures of the thin films in the CIGS solar-cell device and contribute to the optimal device designs.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.999-1003
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• 2009

In this paper, CdS thin films well-known to window layer for solar cell were fabricated by means of vacuum evaporation method treated with different substrate heating. During film fabrication the substrates were heated at 50, 75 and $100^{\circ}C$, respectively. The thin films were then annealed at $200^{\circ}C$ in atmosphere, and the electrical and optical properties were investigated. By annealing, the hexagonal structure of films was changed into cubic structure. Their transmissivity was also increased and moved to longer wave band. It was shown that the film fabricated with the substrate heat-treated at $50^{\circ}C$ had the lowest resistivity.

• 한국재료학회지
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• 제32권11호
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• pp.481-488
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• 2022

The Cu₂ZnSn(S_xSe_1-x)₄ (CZTSSe) absorbers are promising thin film solar cells (TFSCs) materials, to replace existing Cu(In,Ga)Se₂ (CIGS) and CdTe photovoltaic technology. However, the best reported efficiency for a CZTSSe device, of 13.6 %, is still too low for commercial use. Recently, partially replacing the Zn²⁺ element with a Cd²⁺element has attracting attention as one of the promising strategies for improving the photovoltaic characteristics of the CZTSSe TFSCs. Cd²⁺ elements are known to improve the grain size of the CZTSSe absorber thin films and improve optoelectronic properties by suppressing potential defects, causing short-circuit current (J_sc) loss. In this study, the structural, compositional, and morphological characteristics of CZTSSe and CZCTSSe thin films were investigated using X-ray diffraction (XRD), X-ray fluorescence spectrometer (XRF), and Field-emission scanning electron microscopy (FE-SEM), respectively. The FE-SEM images revealed that the grain size improved with increasing Cd²⁺ alloying in the CZTSSe thin films. Moreover, there was a slight decrease in small grain distribution as well as voids near the CZTSSe/Mo interface after Cd²⁺ alloying. The solar cells prepared using the most promising CZTSSe absorber thin films with Cd²⁺ alloying (8 min. 30 sec.) exhibited a power conversion efficiency (PCE) of 9.33 %, J_sc of 34.0 mA/cm², and fill factor (FF) of 62.7 %, respectively.