• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.531-531
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• 2012

So many groups have been researching the green quantum dots such as InP, InP/ZnS for overcoming the semiconductor nanoparticles composed with heavy metals like as Cd and Pb so on. In spite of much effort to keep up CdSe quantum dots, it does not reach the good properties compared with CdSe/ZnS quantum dots. This quantum dot has improved its properties through the generation of core/shell CdSe/ZnS structure or core/multi-shell structures like as CdSe/CdS/ZnS and CdSe/CdS/ CdZnS/ZnS. In this research, we try to synthesize the InP multi-shell structure by the successiveion layer absorption reaction (SILAR) in the one pot. The synthesized multi-shell structure has improved quantum yield and photo-stability. To generate white light, highly luminescent InP multi-shell quantum dots were mixed with yellow phosphor and integrated on the blue LED chip. This InP multi-shell improved red region of the LEDs and generated high CRI.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.451-451
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• 2012

Instead of a highly toxic CdSe and ZnScore-shell,InP/ZnSecore-shell quantum dots [1,2] were investigated as an active material for quantum dot light emitting diode (QD-LED). In this paper, aquantum dot light-emitting diode (QDLED), consisting of a InP/ZnS core-shell type materials, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/Poly-TPD/InP-ZnS core-shell quantum dot/Cesium carbonate(CsCO3)/Al was fabricated through a simple spin coating technique. The resulting InP/ZnS core-shell QDs, emitting near blue green wavelength, were more efficient than the above CdSe QDs, and their luminescent properties were comparable to those of CdSe QDs.Thebrightness ofInP/ZnS QDLED was maximumof 179cd/m2.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.417-417
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• 2012

For desired optical properties of QDs, it is very important to reduce the presence of defects on their surfaces. Passivation of surface defects using larger band gap materials is the most effective way. Some groups successfully synthesized Cd based multi-shell structured quantum dots and improved its optical properties. However, its productivity has limit because of the amounts of glass ware and space. In this research, we try to synthesize Cd based multi-shell structured nanocrystal quantum dots to overcome demerits of conventional batch synthetic method. This reactor composed pump, SUS reaction part (3.2 mm stainless steel and furnace) and batch mixer. We successively synthesized CdSe/CdS/ZnS quantum dot at this reactor in one step.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.8
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• pp.167-171
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• 2014

While the development of a portable plate panel display, thinning, high color reproduction, high brightness studies have been actively performed. LED, OLED is used as a light source. The research on quantum dot is much accomplished by the material of light source. Such quantum dot is the next generation semiconductor nano fluorescent substance because quantum dot has the high color reproduction and flexible display characteristic. In this study, we presented to method of using the quantum dot for implementation of the plate panel display. Quantum Dot (CdSe/ZnS), having a 100um thickness, is spread in PET barrier film. A Blue LED having a wavelength of 455nm as a light source irradiating light to the optical characteristic of the devices produced and evaluated. Also we presented the possibility for application with the color change film of the LCD.

• Korean Chemical Engineering Research
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• v.59 no.3
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• pp.450-454
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• 2021

Currently, gamma nuclide analysis is mainly used using inorganic scintillators or semiconductor detectors. These detectors have high resolution but there are less economical, limited in size, and low process ability than plastic scintillators. Therefore, quantum dot-based plastic scintillator was developed using the advantages of the quantum dot nanomaterial and the conventional plastic scintillator. In this study, efficient plastic scintillator was fabricated by adding CdS/ZnS based on the most widely used Cd-based nanomaterial in a polystyrene matrix. In addition, the performance of the commercial plastic scintillator was compared and it was analyzed through radiological measurement experiments. The detection efficiency of fabricated plastic scintillator was higher than commercial plastic scintillator, EJ-200. It is believed that this fabricated plastic scintillator can be used as a radioactivity analyzer in the medical and nuclear facility fields.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.411-414
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• 2013

In order to enhance the photovoltaic property of the CdS/CdSe co-sensitized quantum dot sensitized solar cells (QDSSCs), the surface of nanoporous $TiO_2$ photoanode was modified by ultrathin $Al_2O_3$ layer before the deposition of quantum dots (QDs). The $Al_2O_3$ layer, dip-coated by 0.10 M Al precursor solution, exhibited the optimized performance in blocking the back-reaction of the photo-injected electrons from $TiO_2$ conduction band (CB) to polysulfide electrolyte. Transient photocurrent spectra revealed that the electron lifetime (${\tau}_e$) increased significantly by introducing the ultrathin $Al_2O_3$ layer on $TiO_2$ surface, whereas the electron diffusion coefficient ($D_e$) was not varied. As a result, the $V_{oc}$ increased from 0.487 to 0.545 V, without appreciable change in short circuit current ($J_{sc}$), thus inducing the enhancement of photovoltaic conversion efficiency (${\eta}$) from 3.01% to 3.38%.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.428-428
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• 2013

Red color light emitting diodes were fabricated using CdSe/CdS/ZnS quantum dots (QDs). Patterned indium-tin-oxide (ITO) was used as a transparent anode, and oxygen plasma treatment on a surface of ITO was performed. Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was spin coated on the ITO surface as a hole injection layer. Then CdSe/CdS/ZnS QDs was spin coated and thermal treatment was performed for the cross-linking of QDs. TiO2 was coated on the QDs as an electron transport layer, and 150 nm of aluminum cathode was formed using thermal evaporator and shadow mask. The device shows a pure red color emission at 606 nm wavelength. Device characteristics will be presented in detail.

• Bulletin of the Korean Chemical Society
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• v.35 no.10
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• pp.2895-2900
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• 2014

We fabricated quantum dot-sensitized solar cells (QDSSCs) using cadmium sulfide (CdS) and cadmium telluride (CdTe) quantum dots (QDs) as sensitizers. A spin coated $TiO_2$ nanoparticle (NP) film on tin-doped indium oxide glass and sputtered Au on fluorine-doped tin oxide glass were used as photo-anode and counter electrode, respectively. CdS QDs were deposited onto the mesoporous $TiO_2$ layer by a successive ionic layer adsorption and reaction method. Pre-synthesized CdTe QDs were deposited onto a layer of CdS QDs using a direct adsorption technique. CdS/CdTe QDSSCs had high light harvesting ability compared with CdS or CdTe QDSSCs. QDSSCs incorporating single-walled carbon nanotubes (SWNTs), sprayed onto the substrate before deposition of the next layer or mixed with $TiO_2$ NPs, mostly exhibited enhanced photo cell efficiency compared with the pristine cell. In particular, a maximum rate increase of 24% was obtained with the solar cell containing a $TiO_2$ layer mixed with SWNTs.

• Journal of Powder Materials
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• v.25 no.2
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• pp.132-136
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• 2018

Core/shell CdSe/ZnS quantum dots (QDs) are synthesized by a microfluidic reactor-assisted continuous reactor system. Photoluminescence and absorbance of synthesized CdSe/ZnS core/shell QDs are investigated by fluorescence spectrophotometry and online UV-Vis spectrometry. Three reaction conditions, namely; the shell coating reaction temperature, the shell coating reaction time, and the ZnS/CdSe precursor volume ratio, are combined in the synthesis process. The quantum yield of the synthesized CdSe QDs is determined for each condition. CdSe/ZnS QDs with a higher quantum yield are obtained compared to the discontinuous microfluidic reactor synthesis system. The maximum quantum efficiency is 98.3% when the reaction temperature, reaction time, and ZnS/CdSe ratio are $270^{\circ}C$, 10 s, and 0.05, respectively. Obtained results indicate that a continuous synthesis of the Core/shell CdSe/ZnS QDs with a high quantum efficiency could be achieved by isolating the reaction from the external environment.

• Journal of Powder Materials
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• v.26 no.1
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• pp.45-48
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• 2019

Quantum dots (QDs) are an attractive material for application in solar energy conversion devices because of their unique properties including facile band-gap tuning, a high-absorption coefficient, low-cost processing, and the potential multiple exciton generation effect. Recently, highly efficient quantum dot-sensitized solar cells (QDSCs) have been developed based on CdSe, PbS, CdS, and Cu-In-Se QDs. However, for the commercialization and wide application of these QDSCs, replacing the conventional rigid glass substrates with flexible substrates is required. Here, we demonstrate flexible CISe QDSCs based on vertically aligned $TiO_2$ nanotube (NT) electrodes. The highly uniform $TiO_2$ NT electrodes are prepared by two-step anodic oxidation. Using these flexible photoanodes and semi-transparent Pt counter electrodes, we fabricate the QDSCs and examine their photovoltaic properties. In particular, photovoltaic performances are optimized by controlling the nanostructure of $TiO_2$ NT electrodes.