• Journal of the Korean Society of Radiology
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• v.4 no.2
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• pp.21-25
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• 2010

Recently, various semiconductor compounds as radiation detection material have been researched for a diagnostic x-ray detector application. In this paper, we have fabricated the CdS detecton sensor that has good photosensitivity and high x-ray absorption efficiency among other semiconductor compounds, and evaluated the application feasibility by investigating the detection properties about energy range of diagnostic x-ray generator. We have fabricated the line voltage selector(LCV) for a signal acquisition and quantities of CdS sensor, and designed the voltage detection circuit and rectifying circuit. Also, we have used a relative relation algorithm according to x-ray exposure condition, and fabricated the interface board with DAC controller. Performance evaluation was investigated by data processing using ANOVA program from voltage profile characteristics according to resistive change obtained by a tube voltage, tube current, and exposure time that is a exposure condition of x-ray generator. From experimental results, an error rates were reduced according to increasing of a tube voltage and tube current, and a good properties of 6%(at 90 kVp) and 0.4%(at 320 mA) ere showed. and coefficient of determination was 0.98 with relative relation of 1:1. The error rate according to x-ray exposure time showed exponential reduction because of delayed response velocity of CdS material, and the error rate has 2.3% at 320 msec. Finally, the error rate according to x-ray dose is below 10%, and a high relative relation was showed with coefficient of determination of 0.9898.

• The Journal of the Acoustical Society of Korea
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• v.16 no.2
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• pp.89-94
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• 1997

A new type SO$_2$ gas sensor with a particular inorganic thin film on SAW devices was developed. The sensor consisted of twin SAW oscillators of the center frequency of 54 MHz fabricated on the LiTaO$_3$ piezoelectric single crystal. One delay line of the sensor was coated with a CdS thin film that selectively adsorbed and desorbed SO$_2$, while the other was uncoated for use as a stable reference. Deposition of the CdS thin film was carried out by the spray pyrolysis method using an ultrasonic nozzle. The sensor could measure the concentration in air less than 0.25 parts per million of SO$_2$. Stability of the sensor turned out to be as good as less than 20ppm, recovery time after each measurement was as short as 5 minutes. Repeatability of the measurement was confirmed through so many reiterated experiments. Hence, the SAW sensor developed through this work showed promising performance as a microsensing tool of SO$_2$. Further work required to improve the performance of the sensor includes enhancement of the reactivity of the CdS thin film with SO$_2$ through appropriate dopant addition, an increase of the center frequency of the SAW device.

• Korean Journal of Environmental Biology
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• v.22 no.3
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• pp.394-399
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• 2004

A BOD sensor was prepared with S. marcescens LSY4 and was applied for measurement of BOD values of a solution containing the standard organic pollutants. The sensor sensitivity was nearly independent of the culture time in the range of 9-16 hours. It was also affected little by the cell mass in the range of 0.22-0.75 mg $cm^{-2}$. A cyclic change in the solution pH in the range of 4-9 was accompanied by a reversible variation in the sensor sensitivity. However, the reversibility was lost when the solution pH became more acidic or more basic. Heavy metal ions lowered the sensor sensitivity, which took place more precipitously in the presence of $Cu^{2+}$ and $Ag^+$ rather than in the presence of $Zn^{2+}$ and $Cd^{2+}$. The reduction of the sensor sensitivity was significantly attenuated by loading heavy metal ion tolerance induced strain. The $Cu^{2+}$tolerance induced strain was more efficient for the attenuation than $Zn^{2+}$ and $Cd^{2+}$ tolerance induced strain.

• Journal of the Korean Institute of Intelligent Systems
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• v.23 no.4
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• pp.341-347
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• 2013

This study presents the remote control of a board robot using a Sensing glove based on Bluetooth communication. The board robot is a kind of riding robot controlled by an user. The user wears the proposed remote glove controller, and changes a direction of the robot by different kinds of finger actions. Bluetooth is used for wireless communication between the board robot and its user. CdS cell Sensors and a LED in the glove are used for recognition of a number of finger actions, which are measured as analog signals. The finger actions have five commands ('1'right '2'neutrality '3'left '4'operation '5'stop), which are transmitted from the user to the board robot through Bluetooth communication. Experimental results show that proposed a Sensing glove can effectively control the board robot.

• Journal of Sensor Science and Technology
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• v.7 no.5
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• pp.350-355
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• 1998

We fabricated a photoconductive cell made of polycrystalline CdS thick film which has high photo-sensitivity using a print/sintering method. The resultant grain size is about $4\;{\mu}m$. When $CuCl_2$ of 0.06 to 0.12 mg is added, the sensitivity and the ratio of photocurrent to dark current are 0.8 and $10^5$, respectively. The response wavelength is 511 nm. The rise and decay response times are 50 and 20 ms, respectively. In addition, the maximum power dissipation is beyond 80mW. We noticed that the addition of $CuCl_2$ between 0.06 and 0.12 mg to 1g of CdS results in a reliable formation of photoconductive sensor.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.87-94
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• 1993

CdS and Se thin films were deposited on slide glass by EBE method respectively and surface morphology, crystal structure, electrical and optical properties were investigated by substrate temperature and annealing. The deposited CdS film was well fabricated with cubic structure at substrate temperature of $150^{\circ}C$. Se film was deposited with noncrystal structure until substrate temperature of $100^{\circ}C$, but Se film was grown with monoclinic structure at substrate temperature of $150^{\circ}C$. And so, after annealing at $150^{\circ}C$ for 15min, noncrystalline Se was proved to be hexagonal structure. Finally, the maximum output of Se/CdS heterojunction at 5000 lux was 4 $mW/cm^{2}$ and maximum spectral sensitivity was represented at 585nm.

• Journal of the Korean Chemical Society
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• v.60 no.2
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• pp.131-136
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• 2016

Copper ion induced photoluminescence (PL) quenching dynamics and recovery of the PL by zinc ions were investigated for CdSe based nanocrystals. When copper ions were added, CdSe quantum dots showed fast and dramatically PL quenching whereas PL of CdSe nanorod gradually decreased. In the presence of zinc ions, the PL of CdSe/CdS (core/shell) nanocrystals that have quenched by copper ions was efficiently recovered. It showed that the PL intensity of nanocrystals increased by 50% in a solution containing 1 μM zinc ions. The PL intensity was increasing with increasing zinc ions, and could be described by Langmuir binding isotherm model. We showcase that the CdSe based nanocrystals can be used as fluorescence turn-on sensor.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.10
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• pp.2072-2078
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• 2011

In photovoltaic(PV) system, for obtaining maximum efficiency of solar power systems, the solar tracking system must be controlled to match position of the sun. In this paper, we design the solar tracking system to track movement of the sun using CdS sensor modules and to determine direction of the sun under shadow of directions. In addition, for an intelligent computation in tracking of the sun, a fuzzy controller is allocated to space avaliable for splitting area of fuzzy part for the fuzzy input space(grid-type fuzzy partition) in which a fuzzy grid partition divides fuzzy rules bases. As well, a simple model of solar tracking system is designed by two-axis motor control systems and the 8-direction sensor module that can measure shadow from CdS sensor modules by matching of axis of CdS modules and PV panels. We demonstrate this systems is effective for fixed location and moving vessels and our fuzzy controller can track the satisfactorily.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.282-288
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• 2003

We report the growth of HgCdTe by metal organic vapor phase epitaxy (MOVPE), using (211)B CdTe/Si substrates grown by molecular beam epitaxy (MBE). The surface morphology of these films is very smooth with hillock free. The etch pit densities (EPD) and full widths at half maximum (FWHM) of x-ray rocking curves exhibited that the crystalline quality of HgCdTe epilayer on MBE grown CdTe/Si was improved compare to HgCdTe on GaAs substrate. The Hall parameters of undoped HgCdTe layers on CdTe/Si showed n-type behavior with carrier concentration of $8{\times}10^{14}/cm^3$ at 77K. But HgCdTe on GaAs showed p-type conductivity due to in corporation of p-type impurities during GaAs substrate preparation. It is thought that these results are applicable for large area HgCdTe forcal plane arrays of $1024{\times}1024$ format and beyound.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.119-119
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• 2002