• Title/Summary/Keyword: CdS/CdSe

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Effect of Dietary Selenium of Metallothionein Synthesis and Antioxidative Detoxificantion Mechanism in Cadmium Administered Rats (Cadmium 투여 흰쥐에 있어서 Metallothionein 합성과 항산화적 해독기구에 미치는 식이 Selenium의 영향)

  • 이순재
    • Journal of Nutrition and Health
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    • v.26 no.3
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    • pp.286-298
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    • 1993
  • In order to investigate the effect of selenium (Se) on the liver damage, metallothionein synthesis and hepatic antioxidative detoxification system in cadmium(Cd) administered rats. Sprague-Dawley male rats(60\\5g) were divided into two diet groups, depending on with (CdS groups) or without (Cd groups) 0.5ppm Se supplementation and fed experimental diets ad libidum for 4 weeks. And then each group was again subdivided into five groups, depending on injection number of Cd, i.e., 0, 1, 2, 3, and 4 times of 2.5mg Cd/kg of body wt once a day. Hemoglobin concentration, hematocrit values, superoxide dismutase, glutathione peroxidase and glutathione S-transferase activite were decreased progressively with increasing number of Cd injection, but increased by the supplementation of Se. The reduced form of glutathione (GSH) contents in blood and liver and vitamin E content were decreased and oxidized form (GSSG) increased in Cd groups, but these of Se supplemented groups were not very different from controls. Cd reduced liver vitamin E content which was not restored by Se supplementation. Liver lipid peroxide values were elevated with increasing doses of Cd, but Se supplementation reduced these elevated levels. Accumulation of metallothionein in liver and kidney was increased with increasing number of Cd injection, but Se did not affect on them. Histological examination revealed that lysosomes were significantly increased and mitochondria and Golgi apparatus were enlarged by Cd, however, these changes were reduced by Se. It was concluded that Se administration promoted antioxidative detoxification and alleviated peroxidative damage in rat liver by Cd.

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Photoelectrochemical Cell Study on Closely Arranged Vertical Nanorod Bundles of CdSe and Zn doped CdSe Films

  • Soundararajan, D.;Yoon, J.K.;Kwon, J.S.;Kim, Y.I.;Kim, S.H.;Park, J.H.;Kim, Y.J.;Park, D.Y.;Kim, B.C.;Wallac, G.G.;Ko, J.M.
    • Bulletin of the Korean Chemical Society
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    • v.31 no.8
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    • pp.2185-2189
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    • 2010
  • Closely arranged CdSe and Zn doped CdSe vertical nanorod bundles were grown directly on FTO coated glass by using electrodeposition method. Structural analysis by XRD showed the hexagonal phase without any precipitates related to Zn. FE-SEM image showed end capped vertically aligned nanorods arranged closely. From the UV-vis transmittance spectra, band gap energy was found to vary between 1.94 and 1.98 eV due to the incorporation of Zn. Solar cell parameters were obtained by assembling photoelectrochemical cells using CdSe and CdSe:Zn photoanodes, Pt cathode and polysulfide (1M $Na_2S$ + 1M S + 1M NaOH) electrolyte. The efficiency was found to increase from 0.16 to 0.22 upon Zn doping. Electrochemical impedance spectra (EIS) indicate that the charge-transfer resistance on the FTO/CdSe/polysulfide interface was greater than on FTO/CdSe:Zn/polysulfide. Cyclic voltammetry results also indicate that the FTO/CdSe:Zn/polysulfide showed higher activity towards polysulfide redox reaction than that of FTO/CdSe/polysulfide.

Study on the Electro-Optic Characteristics of $CdS_{1-x}Se_{x}$ Photoconductive Thin Films ($CdS_{1-x}Se_{x}$ 광도전 박막의 전기-광학적 특성연구)

  • Yang, D.I.;Shin, Y.J.;Lim, S.Y.;Park, S.M.;Choi, Y.D.
    • Journal of Sensor Science and Technology
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    • v.1 no.1
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    • pp.53-57
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    • 1992
  • We report the crystal growth and the electro-optic characteristics of $CdS_{1-x}Se_{x}$ thin films. $CdS_{1-x}Se_{x}$ thin films wire deposited on the alumina plate by electron beam evaporation technique in pressure of $1.5{\times}10^{-7}$ torr, voltage of 4kV, current of 2.5mA and substrate temperature of $300^{\circ}C$. The deposited $CdS_{1-x}Se_{x}$ thin films were proved to be a polycrystal with hexagonal structure through X-ray diffraction patterns. $CdS_{1-x}Se_{x}$ photoconductive films showed high photoconductivity after annealing at $550^{\circ}C$ for 30 minutes. And the films have been investigated the Hall effect, photocurrent spectra, sensitivity, maximum allowable power dissipation and response time.

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Synthesis and analysis CdSe/ZnS quantum dot with a Core/shell Continuous Synthesis System Using a Microfluidic Reactor (미세유체반응기를 이용한 core/shell 연속 합성 시스템을 이용한 CdSe/ZnS 양자점 합성 및 분석)

  • Hong, Myung Hwan;Joo, So Young;Kang, Lee-Seung;Lee, Chan Gi
    • Journal of Powder Materials
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    • v.25 no.2
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    • pp.132-136
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    • 2018
  • Core/shell CdSe/ZnS quantum dots (QDs) are synthesized by a microfluidic reactor-assisted continuous reactor system. Photoluminescence and absorbance of synthesized CdSe/ZnS core/shell QDs are investigated by fluorescence spectrophotometry and online UV-Vis spectrometry. Three reaction conditions, namely; the shell coating reaction temperature, the shell coating reaction time, and the ZnS/CdSe precursor volume ratio, are combined in the synthesis process. The quantum yield of the synthesized CdSe QDs is determined for each condition. CdSe/ZnS QDs with a higher quantum yield are obtained compared to the discontinuous microfluidic reactor synthesis system. The maximum quantum efficiency is 98.3% when the reaction temperature, reaction time, and ZnS/CdSe ratio are $270^{\circ}C$, 10 s, and 0.05, respectively. Obtained results indicate that a continuous synthesis of the Core/shell CdSe/ZnS QDs with a high quantum efficiency could be achieved by isolating the reaction from the external environment.

Photoluminescence Quenching and Recovery of the CdSe Nanocrystals by Metal Ions (금속이온에 의한 CdSe 나노결정의 형광 소광 및 회복 특성)

  • Bang, Jiwon;Kim, Bomi;Koo, Eunhae;Kim, Sungjee
    • Journal of the Korean Chemical Society
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    • v.60 no.2
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    • pp.131-136
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    • 2016
  • Copper ion induced photoluminescence (PL) quenching dynamics and recovery of the PL by zinc ions were investigated for CdSe based nanocrystals. When copper ions were added, CdSe quantum dots showed fast and dramatically PL quenching whereas PL of CdSe nanorod gradually decreased. In the presence of zinc ions, the PL of CdSe/CdS (core/shell) nanocrystals that have quenched by copper ions was efficiently recovered. It showed that the PL intensity of nanocrystals increased by 50% in a solution containing 1 μM zinc ions. The PL intensity was increasing with increasing zinc ions, and could be described by Langmuir binding isotherm model. We showcase that the CdSe based nanocrystals can be used as fluorescence turn-on sensor.

Optical properties of undoped, $Co^{2+}-,\; and\; Er^{3+}-doped \;II^B-Al_2-VI^B_4$ single crystals (Aluminum을 포함한 삼원화합물 반도체의 합성 및 단결정 성장과 광학적 특성 규명에 관한 연구 II -$ZnAl_2S_4,;\;ZnAl_2Se_4,;\;CdAl_2S_4,;\;CdAl_2Se_4$ 를 중심으로-)

  • 김화택;윤창선;김창대;최성휴;진문석;박태영;박광호
    • Journal of the Korean Vacuum Society
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    • v.6 no.1
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    • pp.50-60
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    • 1997
  • Undoped, cobalt-doped and erbium-doped $ZnAl_2S_4, ;ZnAl_2Se_4, ;CdAl_2S_4, ;and;CdAl_2Se_4$ single crystals were grown by the chemical transport reaction method. The crystal structures, the lattice constants, the optical energy gaps, and the photoluminescence properties of these single crystals were investigated. Also, the optical transition mechanisms by the impurities of cobalt and erbium were identified from these results.

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Preparation and characterization of CdSe nanoparticles through a chemical route (화학적 방법에 의한 CdSe 나노입자의 제조 및 특성)

  • Sung MyoungSeok;Lee YoonBok;Kim HyongKuk;Kim Yangdo
    • 한국신재생에너지학회:학술대회논문집
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    • 2005.06a
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    • pp.164-167
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    • 2005
  • Diethnao lamine(DEA)을 함유한 수용액을 ultrasonic irradiation에 의하여 CdSe 반도체 양자점을 제조하였고 제조된 양자점의 광학적 성질을 조사하였다. CdSe 양자점 제조시 카드뮴을 제공하는 물질로는 $CdCl_2{\cdot}2.5H_2O$를, 셀레늄을 제공하는 물질로는 Se powders를 $Na_2SO_3$ 수용액에서 $90^{\circ}C$, 1시간 reflux 한 $Na_2SeSO_3$를 사용하였다. 상온에서 고출력의 초음파 조사 (20kHz, $60Wcm^{-2}$)에 의한 CdSe반도체 양자점을 얻기 위하여 초음파 시간을 각각 변화시켰고 XRD, UV-Vis, PL, TEM, XPS론 사용하여 CdSe 나노 입자의 특성을 분석하였다. CdSe흡수스펙트럼을 분석한 결과 450-640nm범위에서 양자점 형성에 의한 엑시톤 흡수 봉우리가 관찰되었음을 확인할 수 있었다. 또한 초음파 조사시간을 5분, 15분, 30분으로 증가시킴에 따라 505nm, 525nm, 545nm로서 엑시톤의 흡수 파장이 장파장 쪽으로 이동함을 확인함으로써 초음파 조사시간에 따라 CdSe 양자점의 크기를 변화시킬 수 있음을 알 수 있었다.

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Dielectric Function Analysis of Cubic CdSe Using Parametric Semiconductor Model (변수화 반도체 모델을 이용한 Cubic Zinc-blonde CdSe의 유전함수 분석)

  • Jung, Y.W.;Ghong, T.H.;Lee, S.Y.;Kim, Y.D.
    • Journal of the Korean Vacuum Society
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    • v.16 no.1
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    • pp.40-45
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    • 2007
  • ZnCdSe alloy semiconductor was widely used for the optoelectronic device. And CdSe is the end-point in this material. In this work, we measured the dielectric function spectrum of cubic CdSe with Vacuum Ultra Violet spectroscopic ellipsometry and analysed this data with parametric model. As a result, we observed some of transition energy point over 6 eV and obtained the database for dielectric function spectrum, which could be used for temperature or alloy composition dependence study on optical property of CdSe.

APTES 코팅된 Si 기판에 pH 변화에 따른 CdSe/ZnS 나노와이어의 배열

  • Gu, Jong-Hyeon;Kim, Tae-Uk;No, Yong-Han
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.471-471
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    • 2011
  • 1차원 나노 와이어는 나노 디바이스를 구현하는데 있어 중요한 요소로 연구되고 있다. 하지만 나노 와이어를 바람직한 위치에 선택적으로 배열하는 부분은 해결할 과제로 남아있다. DNA 분자가 가지고 있는 음의 전하를 띄는 phosphate backbone과 자기조립 특성은 이러한 문제점들을 해결할 수 있는 중요한 요소이다. 본 연구에서는 DNA 분자 형틀을 이용해서 CdSe/ZnS core-shell 나노입자의 pH 의 변화에 따른 표면 전위 변화를 이용하여 선택적 위치의 나노입자 배열을 통한 나노 와이어를 제작하는 연구를 하였다. 1-step 방법을 이용하여 합성한 CdSe/ZnS core-shell 나노입자를 무극성 용매인 chloroform 용액에 분산시키고 dimethylaminoethanethiol (DMAET) 를 이용하여 표면을 양전하로 치환하였다. 그리고 치환한 CdSe/ZnS 나노입자 용액에 HCl 을 이용해서 pH 7, 6, 5, 4로 변화를 주어 zeta potential 변화를 측정하였고 3-aminopropyltriethoxysilane (APTES) 코팅된 Si 기판에 ${\lambda}$-DNA를 정렬하고 이를 형틀로 이용하여 CdSe/ZnS 나노입자를 정렬하는 실험을 하였고 FE-SEM 을 이용하여 측정하였다. 그 결과 CdSe/ZnS 나노입자의 pH 값이 작아지면서 전위가 커짐에 따라서 APTES 코팅된 기판 표면에 나노입자들이 반응하는 것보다 음전하를 띄는 ${\lambda}$-DNA의 phosphate backbone에 반응하는 것이 커짐에 따라 DNA 분자 형틀에 선택적으로 나노입자가 배열되는 것을 확인하였다.

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A Study on the Characteristics of $CdS_{1-x}Se_x$ Luminescent Devices grown by Electron Beam Evaporation Technique (E-Beam 증착기법에 의해 성장된 $CdS_{1-x}Se_x$ 발광소자의 특성연구)

  • 양동익;박성문;라경숙;최용대
    • Journal of the Korean Vacuum Society
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    • v.3 no.1
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    • pp.111-116
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    • 1994
  • 본 연구는 CdS, CdSe 분말을 불순물, flux와 혼합하여 질소 분위기에서 소결한 후 전자빔으로 증착하여 적절한 조건에서 열처리 하였다, 이 박막의 결정구조를 X-ray 회절 실험을 통하여 조사하고 제작된 CdS1-xSex 발광 소자의 전기적 특성은 Hall 효과 측정을 이용하고 광학적특성은 광발광 및 광전 류 스펙트럼, 감도, 최대 허용소비전력, 응답시간 등을 분서하교, 발광소자로서의 기능을 검토하였다.

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