• Nuclear Engineering and Technology
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• 제23권4호
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• pp.438-443
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• 1991

각확산도가 작은 $He^+$ 이온빔 인출전류를 최대로 얻기 위하여 Duoplasmatron 이온원의 동작특성을 조사하였다. 이온원의 기체압력, 아크전류. 전자석 전류, 인출전압등을 변화시키면서 인출되는 $He^+$ 이온빔 전류의 변화를 관찰하였다. 열음극으로는 Ni망위에 BaO와 SrO의 혼합물을 코팅한 산화물 필라멘트를 사용하였으며, 그것의 평균수명은 약 100시간이었다. 인출전류는 아크전류에 선형적으로 비례했다 이온원 전자석전류를 증가시킴에 따라 인출전류는 증가하였지만 빔의 각확산도가 커졌다. 최대의 인출전류는 0.084 Torr의 이온원 압력에서 얻어졌다. 인출전류는 이론에서와 마찬가지로 인출전압의 3/2승에 비례하였다. 5.72 kV의 인출전압에서는 최적인출조건하에서 50 $\mu$A의 인출전류가 얻어졌다.

• 한국자기학회지
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• 제13권6호
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• pp.251-256
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• 2003

컴퓨터, TV, 의료용기기 등의 모니터로 사용되는 브라운관의 자기장 영향에 따른 특성을 분석하기 위한 자기장 발생 및 측정장치를 개발하였다. 한 변의 길이가 2 m인 정육각형 형태의 3-축 자기장 발생장치, 컴퓨터, 전원공급기 및 자기장 측정기 등을 이용하여 전세계 각 나라별 지구자기장(Earth Magnetic Field, EMF)을 발생시킬 수 있는 대형 3-축 코일 시스템을 설계하고 제작하였다. 각 코일의 코일상수는 X축(E-W)는 30.31 $\mu$T/A, Y축(Ver)는 29.73 $\mu$T/A 및 Z축(N-S)는 30.51 $\mu$T/A이고, 자기장 분해능은 0.01 $\mu$T이었다. 자기장 균일도는 사용되는 편향요크(Deflection York, DY)의 크기를 고려하여 중심에서 12 cm 이내의 공간에서 측정하였고, 균일도는 1 % 내외 이었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.29.1-29.1
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• 2009

Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.

• 한국수소및신에너지학회논문집
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• 제25권4호
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• pp.378-385
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• 2014

In this research, we investigate electrical performance and electrochemical properties of graphene supported Pt (Pt/G) and PtM (M = Ni and Y) alloy catalysts (PtM/Gs) that are synthesized by modified polyol method. With the PtM/Gs that are adopted for oxygen reduction reaction (ORR) as cathode of proton exchange membrane fuel cells (PEMFCs), their catalytic activity and ORR performance and electrical performance are estimated and compared with one another. Their particle size, particle distribution and electrochemically active surface (EAS) area are measured by TEM and cyclic voltammetry (CV), respectively. On the other hand, regarding ORR activity and electrical performance of the catalysts, (i) linear sweeping voltammetry by rotating disk electrode and rotating ring-disk electrode and (ii) PEMFC single cell tests are used. The TEM and CV measurements demonstrate particle size and EAS of PtM/Gs are compatible with those of Pt/G. In case of PtNi/G, its half-wave potential, kinetic current density, transferred electron number per oxygen molecule and $H_2O_2$ production % are excellent. Based on data obtained by half-cell test, when PEMFC singlecell tests are carried out, current density measured at 0.6V and maximum power density of the PEMFC single cell employing PtNi/G are better than those employing Pt/G. Conclusively, PtNi/Gs synthesized by modified polyol shows better ORR catalytic activity and PEMFC performance than other catalysts.

• Journal of Electrochemical Science and Technology
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• 제9권1호
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• pp.37-43
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• 2018

In order to improve current efficiency and decrease energy consumption in the electrosynthesis of ammonium persulfate, electrolytic properties of four cation exchange membranes, namely, the $JCM-II^{(R)}$ membrane, $Nafion^{(R)}$ 324 membrane CMI-$7000^{(R)}$ membrane and a self-made perfluorosulfonic ion exchange membrane (PGN membrane) were investigated using a sintered platinized titanium anode and a Pb-Sb-Sn alloy cathode in a self-made electrolytic cell. The effect of cell voltage and electrolyte flow rate on the current efficiency and the energy consumption were investigated. The results indicated that the PGN membrane could improve current efficiency to 94.85% and decrease energy consumption to $1119kWh\;t^{-1}$ (energy consumption per ton of the ammonium persulfate generated) under the optimal operating conditions and the highest current efficiency of the $JCM-II^{(R)}$ membrane, $Nafion^{(R)}$ 324 membrane and CMI-$7000^{(R)}$ membrane were 80.73%, 77.76% and 73.22% with their lowest energy consumption of $1323kWh\;t^{-1}$, $1539kWh\;t^{-1}$ and $2256kWh\;t^{-1}$, respectively. The PGN membrane has the advantages of high current efficiency and energy power consumption and has sufficient mechanical strength with the reinforced mesh. Therefore the PGN membrane will has good value in popularization in the industrial electrosynthesis of ammonium persulfate in the future.

• 한국진공학회지
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• 제14권4호
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• pp.195-200
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• 2005

For the longevity of OLEDs, passivation of OLEDs is an important process step since organic materials used in OLEDs are very vulnerable to moisture. In this work, the passivation effect of the plasma polymerized para-xylene (PP$\rho$X) layers was studied. The PPpX layers deposited by PECVD were formed on top of the cathode with various plasma powers of 50 - 90 W. Passivation effect of PP$\rho$X was significantly dependent upon the deposition plasma power of the PP$\rho$X film. The lifetime of OLEDs with the 70 W deposited PP$\rho$X passivation layer was about 5 times longer than that of the control device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.480-480
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• 2010

In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1,500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photo-electron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Sheet resistance of 4 Ohms cm was achieved after the deposition and 30 min annealing in the hydrogen at $350^{\circ}C$. Elevation of the substrate temperature during the deposition process up to $350^{\circ}C$ leads to decreasing of the film's resistance due to rearrangement of the crystalline structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.237.2-237.2
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• 2013

ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.

• Nuclear Engineering and Technology
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• 제51권5호
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• pp.1417-1427
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• 2019

In this study, we evaluated the performance of a commercial pixelated cadmium zinc telluride (CZT) detector for spectroscopy and identified its feasibility as a Compton camera for radiation monitoring in a nuclear power plant. The detection system consisted of a $20mm{\times}20mm{\times}5mm$ CZT crystal with $8{\times}8$ pixelated anodes and a common cathode, in addition to an application specific integrated circuit. The performance of the various radioisotopes $^{57}Co$, $^{133}Ba$, $^{22}Na$, and $^{137}Cs$ was evaluated. In general, the amplitude of the induced signal in a CZT crystal depends on the interaction position and material non-uniformity. To minimize this dependency, a drift time correction was applied. The depth of each interaction was calculated by the drift time and the positional dependency of the signal amplitude was corrected based on the depth information. After the correction, the Compton regions of each spectrum were reduced, and energy resolutions of 122 keV, 356 keV, 511 keV, and 662 keV peaks were improved from 13.59%, 9.56%, 6.08%, and 5%-4.61%, 2.94%, 2.08%, and 2.2%, respectively. For the Compton imaging, simulations and experiments using one $^{137}Cs$ source with various angular positions and two $^{137}Cs$ sources were performed. Individual and multiple sources of $^{133}Ba$, $^{22}Na$, and $^{137}Cs$ were also measured. The images were successfully reconstructed by weighted list-mode maximum likelihood expectation maximization method. The angular resolutions and intrinsic efficiency of the $^{137}Cs$ experiments were approximately $7^{\circ}-9^{\circ}$ and $5{\times}10^{-4}-7{\times}10^{-4}$, respectively. The distortions of the source distribution were proportional to the offset angle.

• 한국산업융합학회 논문집
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• 제24권6_2호
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• pp.909-917
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• 2021

This study was carried out experimentally on the production and properties of silicon nanopowders characteristics using a transferred type arc plasma apparatus. To investigate the properties of silicon nanopowder, the purity of argon gas(99.999%, 99.9%) and the partial pressure ratio of nitrogen gas(0~90%) were varied. The total pressure in chamber is 400Torr and the silicon chunk amount used as raw material is 300g. The power supplied to the cathode to generate arc plasma was 9~12kW/h, and the electrode was made of tungsten and graphite with a diameter of 13mm. The particle size, impurity elements and powder evaporation rate of the silicon powder were analyzed using the XRD, FE-SEM, TEM and electronic scale. According to the purity of argon gas, the silicon evaporation rate and the particle size were similar, and impurities were generated more in the case of 99.9% purity than 99.999%. When argon gas and nitrogen gas were mixed in the chamber, the silicon evaporation rate and particle size increased as the partial pressure ratio of nitrogen gas increased. In particular, when the partial pressure ratio of nitrogen gas was 80%, the silicon evaporation rate 80g/h, and the particle size was about 80~100nm.