• Journal of the Korean Electrochemical Society
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• v.9 no.1
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• pp.6-9
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• 2006

The effect of $ZrO_2$-coating on the electrochemical properties of the cathode material $LiNi_{0.8}Co_{0.2}O_2$ was investigated using EPMA, TEM, and EIS. In particular, we facused on the distribution of the $ZrO_2$ on the particle surface to study the relation between electrochemical properties of the coated cathode and the distribution of the coating materials in the particle. Based on the results from the composition analysis and electrochemical tests, it was found that the coating layer consisted of nano-sized $ZrO_2$ particles attached non-uniformly on the particle surface and the $ZrO_2$ layer significantly improved the electrochemical properties of the cathode by suppressing the impedance growth at the interface between the electrodes and the electrolyte.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.15-18
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10 ${\mu}{\textrm}{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sized conventional LTIGBT arid the conventional LTIGBT which has the width of 17 ${\mu}{\textrm}{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17 ${\mu}{\textrm}{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field In the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.31-32
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• 2007

Built-in voltage in organic light-emitting diodes was studied using modulated photocurrent technique ambient conditions. A device was made with a structure of anode/$Alq_3$/cathode to study a built-in voltage. An ITO was used as an anode, and $Li_2O$/Al was used as a cathode. From the bias voltage-dependent photocurrent, built-in voltage of the device is determined. The applied bias voltage when the magnitude of modulated photocurrent is zero corresponds to a built-in voltage. Built-in voltage in the device is generated due to a difference of work function of the anode and cathode. It was found that for 0.5nm thick $Li_2O$ layer built-in voltage is the higher than the others. It indicates that a very thin alkaline metal compound $Li_2O$ lowers an electron barrier height.

• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.269-275
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• 2005

We analyzed the unit cell performance against the cathode porosity, which is supposed to be closely related with active sites for the cathode reaction. In order to fabricate the unit cells with different porosity in the cathode layer we changed the mixing ratio of fine and coarse LSCF cathode powders. The final porosity of each cathode layer was 14, 23, 27, $39\%$ respectively. According to the electrochemical analysis of unit cell performance via DC current interruption and AC impedance method, the electrodic polarization resistance was diminished as the cathode porosity increased. The decrease of polarization resistance was attributed due to the increase of active reaction sites and the enhancement of overall unit cell performance could be explained in the same line.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.299-300
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• 2009

We have studied an organic layer and semitransparent Al cathode thickness dependent optical properties for top-emission organic light-emitting diodes. Device structure is ITO(170nm)/TPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/Al(100nm) and Al(100nm)/TPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/Al(25nm). While a thickness of total, organic layer was varied from 85nm to 165nm, a ratio of those two layers was kept to be about 2:3. Then it was compared with that of bottom devices. And a thickness of semitransparent Al cathode was varied from 20nm to 30nm for the device with an organic layer thickness of 140nm. We were able to control the emission spectra from the top-emission organic light-emitting diodes.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.40.2-40.2
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• 2011

As the old saying 'nothing is complete unless you put it in final shape', although nanosheets (NSs) are a promising functional building block for various electrochemical applications, their true value cannot be realized until they are well woven into electrical conducting materials. As an effort to determine their ideal shape, in this study, a unique manufacturing route to build a layer-by-layer (LBL) structure of two-dimensionally ordered, free-standing ${\beta}$-nickel hydroxide nanosheets (${\beta}$-NHNSs) that are fully electrically addressed with single-wall carbon nanotube fabrics was demonstrated, and its capabilities were verified through a comparative study on the differences between a simple bulky and LBL-structured electrochemical cathode, representing two extreme cases. The LBL-structured cathode showed a discharging current peak that was 25 times larger than the bulky structured one measured in cyclic voltammetry, which implies that the LBL structure is near an ideal electrode configuration for NS-based electrochemical applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.21-24
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• 2003

The understanding of the mechanism of device degradation has been accomplished recently, for devices using $AlQ_3$ electron transport and emitter molecule. In this presentation the experimental evidence for the degradation mechanism of $AlQ_3$ based devices will be reviewed, showing that the hypothesis of an unstable $AlQ_3^+$ cation explains a large amount of experimental data. This hypothesis, however, explains not only the room temperature device degradation in time but also sheds light on temperature stability of OLEDs. Dependence of half-life of a series of devices with an emitter layer composed of a mixture of $AlQ_3$ and different hole transport molecules (mixed emitter layer) will be discussed when they are operated at elevated temperatures. These results can also be explained in the framework of an unstable $AlQ_3^+$ species. An OLED structure containing a doped mixed emitter layer will be described, which shows extraordinary stability, half-life of 1200 hours at operating temperature of 70 C and initial luminance of 1650 $cd/m^2$. We will also discuss a novel Black $Cathode^{TM}$ OLED with reduced optical reflectivity, which is also stable at elevated temperatures. The new cathode utilizes a conductive light-absorbing layer made of a mixture of metals and organic materials.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.113-118
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• 1996

Aligning a cathode tip at the center of a gate hole is important in gated filed emission devices. We have fabricated a silicon field emitter using a following process so that a cathode and a gate hole are automatically aligned . After forming silicon tips on a silicon wafer, the wafer was covered with the $SiO_2$, gate metal, and photoresistive(PR) films. Because of the viscosity of the PR films, a spot where cathode tips were located protruded above the surface. By ashing the surface of the PR film, the gate metal above the tip apex was exposed when other area was still covered with the PR film. The exposed gate metal and subsequenlty the $SiO_2$ layer were selectively etched. The result produced a field emitter in which the gate film was in volcano shape and the cathode tip was located at the center of the gate hole. Computer simulation showed that the volcano shape and the cathode tip was located at the center of the gat hole. Computer simulation showed that the volcano shape emitter higher current and the electron beam which was focused better than the emitter for which the gate film was flat.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.10-14
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• 2003

A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to have significant impact on terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (R IE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi -Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7 % efficiency of mono-crystalline silicon solar cell and 10.2 % for multi-crystalline silicon solar cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.74-75
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• 2007

We report on the characteristics of organic light-emitting diodes with Al cathode deposited by specially designed twin target sputter(TTS) system. It was found that the Al cathode films grown by TTS system were amorphous structure with nanocrystallines due to low substrate temperature during sputtering process. Effective confinement of high-density plasma between two Al targets lead to low temperature sputtering process on organic layer. Moreover, organic light-emitting diodes with Al cathode deposited by TTS system exhibited low leakage current density of $4{\times}10^{-6}\;mA/cm2$ at -6 V indicating plasma damage due to bombardment of energetic particles such as ions and $\gamma$-electrons was effectively restricted in the ITS system. Sputtering method using ITS system is expected to be applied in organic electronics and flexible displays due to its low temperature and plasma damage free deposition process.